Publikationen 2021
Journal Article
Disorder-induced Anderson-like localization for bidimensional thermoelectrics optimization
Matter 4(9), 2970 - 2984 (2021) [10.1016/j.matt.2021.07.017]
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Contribution to a conference proceedings/Contribution to a book
System Theory Enables a Deep Exploration of ReRAM Cells' Switching Phenomena
2021 28th IEEE International Conference on Electronics, Circuits, and Systems (ICECS) : [Proceedings] - IEEE, 2021. - ISBN 978-1-7281-8281-0 - doi:10.1109/ICECS53924.2021.9665611
2021 28th IEEE International Conference on Electronics, Circuits, and Systems (ICECS), DubaiDubai, United Arab Emirates, 28 Nov 2021 - 1 Dec 2021
IEEE 10 pp. (2021) [10.1109/ICECS53924.2021.9665611]
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Journal Article
Tuning electrochemically driven surface transformation in atomically flat LaNiO3 thin films for enhanced water electrolysis
Nature materials 20, 674–682 (2021) [10.1038/s41563-020-00877-1]
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Journal Article - Online First
Boron Strengthened GeTe‐Based Alloys for Robust Thermoelectric Devices with High Output Power Density
Advanced energy materials 11(37), 2102012 - (2021) [10.1002/aenm.202102012]
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Journal Article
Utilizing the Switching Stochasticity of HfO2/TiOx-Based ReRAM Devices and the Concept of Multiple Device Synapses for the Classification of Overlapping and Noisy Patterns
Frontiers in neuroscience 15, 661856 (2021) [10.3389/fnins.2021.661856]
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Contribution to a conference proceedings/Contribution to a book
Implementation of Multinary Łukasiewicz Logic Using Memristive Devices
2021 IEEE International Symposium on Circuits and Systems (ISCAS) : [Proceedings] - IEEE, 2021. - ISBN 978-1-7281-9201-7 - doi:10.1109/ISCAS51556.2021.9401367
2021 IEEE International Symposium on Circuits and Systems (ISCAS), DaeguDaegu, Korea, 22 May 2021 - 28 May 2021
1-5 (2021) [10.1109/ISCAS51556.2021.9401367]
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Conference Presentation (Other)
Accurate Description of the Electronic Conduction at Interfaces in Compact Models
Memrisys 2021, TsukubaTsukuba, Japan, 1 Nov 2021 - 4 Nov 2021
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Conference Presentation (After Call)
Sequence learning, prediction, and generation in networks of spiking neurons
Neuro-inspired Computational Elements Workshop, NICE, RWTH AachenHeidelberg, RWTH Aachen, Germany, 16 Mar 2021 - 19 Mar 2021
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Poster (After Call)
Sequence learning, prediction, and generation in networks of spiking neurons
Neuro-inspired Computational Elements Workshop, NICE, RWTH AachenHeidelberg, RWTH Aachen, Germany, 16 Mar 2021 - 19 Mar 2021
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Poster (After Call)
Sequence learning, prediction, and generation in networks of spiking neurons
NEST Conference, OnlineOnline, Online, 28 Jun 2021 - 29 Jun 2021
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Poster (After Call)
Sequence learning, prediction, and generation in networks of spiking neurons
CNS conference, OnlineOnline, Online, 3 Jul 2021 - 7 Jul 2021
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Preprint
Sequence learning, prediction, and replay in networks of spiking neurons
arXiv (2021)
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Conference Presentation (Other)
An Ag/HfO2/Pt Threshold Switching Device with an Ultra-Low Leakage (< 10 fA), High On/Off Ratio (> 1011), and Low Threshold Voltage (< 0.2 V) for Energy-Efficient Neuromorphic Computing
IEEE International Memory Workshop, IMW 2021, virtualvirtual, virtual, 13 May 2021 - 16 May 2021
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Conference Presentation (Other)
Integrate and Fire Neurons Based on Diffusive Memristors for Spiking Neural Networks
International Conference on Neuromorphic Systems 2021, virtualvirtual, virtual, 22 Jul 2021 - 23 Jul 2021
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Poster (Other)
Integrate and Fire Neurons Based on Diffusive Memristors for Spiking Neural Networks
Integrate and Fire Neurons Based on Diffusive Memristors for Spiking Neural Networks, virtualvirtual, virtual, 22 Jul 2021 - 24 Jul 2021
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Conference Presentation (Other)
Enhanced Performance of Ag/HfO2/Pt-based Diffusive Threshold Switches for Energy-Efficient Neuromorphic Computing
Materials Research Society Fall Meeting 2021, MRS, virtualvirtual, virtual, 5 Dec 2021 - 8 Dec 2021
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Contribution to a conference proceedings/Contribution to a book
An Ag/HfO2/Pt Threshold Switching Device with an Ultra-Low Leakage (< 10 fA), High On/OffRatio (> 1011), and Low Threshold Voltage (< 0.2 V) for Energy-Efficient Neuromorphic Computing
2021 IEEE International Memory Workshop (IMW) : [Proceedings] - IEEE, 2021. - ISBN 978-1-7281-8517-0 - doi:10.1109/IMW51353.2021.9439601
2021 IEEE International Memory Workshop (IMW), DresdenDresden, Germany, 16 May 2021 - 19 May 2021
IEEE 115 pp. (2021) [10.1109/IMW51353.2021.9439601]
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Journal Article
Metavalent Bonding in Solids: Characteristic Representatives, Their Properties, and Design Options
Physica status solidi / Rapid research letters 15(3), 2000482 (2021) [10.1002/pssr.202000482]
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Conference Presentation (Other)
Stochastically Switching HfO2/TiOx ReRAM Devices for Spiking Neural Network Synapses
Materials Research Society Fall Meeting 2021, MRS, virtualvirtual, virtual, 6 Dec 2021 - 8 Dec 2021
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Journal Article
Nanoionic memristive phenomena in metal oxides: the valence change mechanism
Advances in physics 70(2), 155-349 (2022) [10.1080/00018732.2022.2084006]
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Journal Article
Metavalent Bonding in Crystalline Solids: How Does It Collapse?
Advanced materials 33(39), 2102356 - (2021) [10.1002/adma.202102356]
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Journal Article
Exploring Area-Dependent Pr0.7Ca0.3MnO3-Based Memristive Devices as Synapses in Spiking and Artificial Neural Networks
Frontiers in neuroscience 15, 661261 (2021) [10.3389/fnins.2021.661261]
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Conference Presentation (Invited)
Chemical structure of conductive filaments in tantalum oxide memristive devices and its implications for the formation mechanism
ICAMD, Jeju IslandJeju Island, South Korea, 6 Dec 2021 - 10 Dec 2021
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Journal Article
Current-limiting amplifier for high speed measurement of resistive switching data
Review of scientific instruments 92(5), 054701 - (2021) [10.1063/5.0047571]
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Journal Article
Comments on “Experimental Demonstration of Memristor-Aided Logic (MAGIC) Using Valence Change Memory (VCM)”
IEEE transactions on electron devices 68(11), 5925 - 5925 (2021) [10.1109/TED.2021.3109855]
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Conference Presentation (Invited)
Nanoscale metal oxide memristive devices for neuromorphic computation
Electroceramics XVII, virtualvirtual, virtual, 24 Aug 2021 - 28 Aug 2021
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Contribution to a conference proceedings/Contribution to a book
50x Endurance Improvement in TaOx RRAM by Extrinsic Doping
2021 IEEE International Memory Workshop (IMW) : [Proceedings] - IEEE, 2021. - ISBN 978-1-7281-8517-0 - doi:10.1109/IMW51353.2021.9439591
2021 IEEE International Memory Workshop (IMW), DresdenDresden, Germany, 16 May 2021 - 19 May 2021
IEEE 9 pp. (2021) [10.1109/IMW51353.2021.9439591]
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Contribution to a conference proceedings/Journal Article
Tuning the Memory Window of TaOx ReRAM Using the RF Sputtering Power
2021 IEEE International Symposium on Circuits and Systems (ISCAS), DaeguDaegu, Korea, 22 May 2021 - 28 May 2021
Tuning the Memory Window of TaOx ReRAM using the RF Sputtering Power 978-1-7281, 978-1-7281-9201 (2021) [10.1109/ISCAS51556.2021.9401584]
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Conference Presentation (Other)
Physics-Based Modeling of HRS Instability and Retention Phenomena in Filamentary VCM ReRAM
Memrisys 2021, TsukubaTsukuba, Japan, 1 Nov 2021 - 5 Nov 2021
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Journal Article
A Consistent Model for Short-Term Instability and Long-Term Retention in Filamentary Oxide-Based Memristive Devices
ACS applied materials & interfaces 13(48), 58066 - 58075 (2021) [10.1021/acsami.1c14667]
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Journal Article
Standards for the Characterization of Endurance in Resistive Switching Devices
ACS nano 15(11), 17214 - 17231 (2021) [10.1021/acsnano.1c06980]
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Journal Article
Nb‐Mediated Grain Growth and Grain‐Boundary Engineering in Mg 3 Sb 2 ‐Based Thermoelectric Materials
Advanced functional materials 31(28), 2100258 - (2021) [10.1002/adfm.202100258]
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Contribution to a conference proceedings/Contribution to a book
Reliability Aspects of Memristive Devices for Computation-in-Memory Applications
2021 17th International Workshop on Cellular Nanoscale Networks and their Applications (CNNA) : [Proceedings] - IEEE, 2021. - ISBN 978-1-6654-3948-0 - doi:10.1109/CNNA49188.2021.9610760
2021 17th International Workshop on Cellular Nanoscale Networks and their Applications (CNNA), CataniaCatania, Italy, 29 Sep 2021 - 1 Oct 2021
IEEE 1 pp. (2021) [10.1109/CNNA49188.2021.9610760]
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Journal Article
The importance of singly charged oxygen vacancies for electrical conduction in monoclinic HfO 2
Journal of applied physics 129(2), 025104 - (2021) [10.1063/5.0036024]
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Journal Article
Theory and experimental verification of configurable computing with stochastic memristors
Scientific reports 11(1), 4218 (2021) [10.1038/s41598-021-83382-y]
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Journal Article
Phase‐Change and Ovonic Materials (Second Edition)
Physica status solidi / Rapid research letters 15(3), 2100078 - (2021) [10.1002/pssr.202100078]
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Journal Article
Fully in situ Nb/InAs-nanowire Josephson junctions by selective-area growth and shadow evaporation
Nanoscale advances 3(5), 1413 - 1421 (2021) [10.1039/D0NA00999G]
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Journal Article
The potential of chemical bonding to design crystallization and vitrification kinetics
Nature Communications 12(1), 4978 (2021) [10.1038/s41467-021-25258-3]
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Journal Article
Review of Manufacturing Process Defects and Their Effects on Memristive Devices
Journal of electronic testing 47, 1 (2021) [10.1007/s10836-021-05968-8]
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Journal Article
Approaching the Glass Transition Temperature of GeTe by Crystallizing Ge 15 Te 85
Physica status solidi / Rapid research letters 15(3), 2000478 - (2021) [10.1002/pssr.202000478]
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Journal Article
How to Identify Lone Pairs, Van der Waals Gaps, and Metavalent Bonding Using Charge and Pair Density Methods: From Elemental Chalcogens to Lead Chalcogenides and Phase‐Change Materials
Physica status solidi / Rapid research letters 15(11), 2000534 - (2021) [10.1002/pssr.202000534]
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Journal Article
Triggering phase-coherent spin packets by pulsed electrical spin injection across an Fe/GaAs Schottky barrier
Physical review / B 104(19), 195202 (2021) [10.1103/PhysRevB.104.195202]
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Journal Article
Trade‐Off Between Data Retention and Switching Speed in Resistive Switching ReRAM Devices
Advanced electronic materials 7(1), 2000815 (2021) [10.1002/aelm.202000815]
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Journal Article
Intrinsic RESET Speed Limit of Valence Change Memories
ACS applied electronic materials 3(12), 5563 - 5572 (2021) [10.1021/acsaelm.1c00981]
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Journal Article
Impact of the Ohmic Electrode on the Endurance of Oxide-Based Resistive Switching Memory
IEEE transactions on electron devices 68(3), 1024 - 1030 (2021) [10.1109/TED.2021.3049765]
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Poster (Other)
Nanoscale characterization of single layer graphene on α-Al2O3 (0001)
Graphene Week, StrasbourgStrasbourg, France (virtual), 20 Sep 2021 - 24 Sep 2021
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Poster (Other)
CVD growth of single layer graphene on α-Al2O3 and multiscale analysis of MoS2/Graphene/α-Al2O3 2D-layer stacks
Neurotec General Assemby, JülichJülich, Germany, 18 Nov 2021 - 18 Nov 2021
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Conference Presentation (Invited)
Non-volatile photonic Applications with Phase Change Materials
Photonics West San Francisco, San FranciscoSan Francisco, USA, 6 Mar 2021 - 11 Mar 2021
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Conference Presentation (Invited)
Metavalent Bonding in Solids: Provocation or Promise?
2021 Virtual MRS Spring Meeting, SeattleSeattle, USA, 17 Apr 2021 - 23 Apr 2021
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Conference Presentation (Invited)
Functional Materials by Design:Developing Treasure Maps with Quantum Chemistry
MRS Fall Meeting, BostonBoston, USA, 6 Dec 2021 - 8 Dec 2021
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Conference Presentation (Invited)
Advanced Functional Materials by Design:The Prospects of combining Artificial Intelligence with Quantum Chemistry
E-MRS Warsaw, WarsawWarsaw, Poland, 20 Sep 2021 - 23 Sep 2021
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Conference Presentation (Invited)
Phase Change Memory Materials by Design
14th International Conference on Solid State Chemistry (SSC 2021), TrencinTrencin, Slovakia, 14 Jun 2021 - 17 Jun 2021
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Conference Presentation (Other)
Metavalent Bonding in Phase Change Materials:Provocation or Promise?
EPCOS 2021, OxfordOxford, UK, 13 Sep 2021 - 15 Sep 2021
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Talk (non-conference) (Other)
Metavalent Bonding in Solids: Provocation or Promise?
TU München, MünchenMünchen, Germany, 1 Feb 2021 - 1 Feb 2021
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Conference Presentation (Invited)
Crystallization and Vitrification Kinetics by Design: The Role of Chemical Bonding
MRS India, virtualvirtual, India, 20 Dec 2021 - 22 Dec 2021
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Journal Article
Materials Screening for Disorder‐Controlled Chalcogenide Crystals for Phase‐Change Memory Applications
Advanced materials 33(9), 2006221 - (2021) [10.1002/adma.202006221]
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Conference Presentation (Invited)
Redox-based Memristive Switches for Neuromorphic Computing
Cellular Nanoscale Networks, CataniaCatania, Italy, 28 Sep 2021 - 30 Sep 2021
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