Publikationen 2021

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Disorder-induced Anderson-like localization for bidimensional thermoelectrics optimization
Matter 4(9), 2970 - 2984 () [10.1016/j.matt.2021.07.017] BibTeX | EndNote: XML, Text | RIS

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System Theory Enables a Deep Exploration of ReRAM Cells' Switching Phenomena
2021 28th IEEE International Conference on Electronics, Circuits, and Systems (ICECS) : [Proceedings] - IEEE, 2021. - ISBN 978-1-7281-8281-0 - doi:10.1109/ICECS53924.2021.9665611
2021 28th IEEE International Conference on Electronics, Circuits, and Systems (ICECS), DubaiDubai, United Arab Emirates, 28 Nov 2021 - 1 Dec 20212021-11-282021-12-01
IEEE 10 pp. () [10.1109/ICECS53924.2021.9665611] BibTeX | EndNote: XML, Text | RIS

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Tuning electrochemically driven surface transformation in atomically flat LaNiO3 thin films for enhanced water electrolysis
Nature materials 20, 674–682 () [10.1038/s41563-020-00877-1] Embargoed OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Boron Strengthened GeTe‐Based Alloys for Robust Thermoelectric Devices with High Output Power Density
Advanced energy materials 11(37), 2102012 - () [10.1002/aenm.202102012]  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Utilizing the Switching Stochasticity of HfO2/TiOx-Based ReRAM Devices and the Concept of Multiple Device Synapses for the Classification of Overlapping and Noisy Patterns
Frontiers in neuroscience 15, 661856 () [10.3389/fnins.2021.661856] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Implementation of Multinary Łukasiewicz Logic Using Memristive Devices
2021 IEEE International Symposium on Circuits and Systems (ISCAS) : [Proceedings] - IEEE, 2021. - ISBN 978-1-7281-9201-7 - doi:10.1109/ISCAS51556.2021.9401367
2021 IEEE International Symposium on Circuits and Systems (ISCAS), DaeguDaegu, Korea, 22 May 2021 - 28 May 20212021-05-222021-05-28
1-5 () [10.1109/ISCAS51556.2021.9401367] BibTeX | EndNote: XML, Text | RIS

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Accurate Description of the Electronic Conduction at Interfaces in Compact Models
Memrisys 2021, TsukubaTsukuba, Japan, 1 Nov 2021 - 4 Nov 20212021-11-012021-11-04 BibTeX | EndNote: XML, Text | RIS

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Sequence learning, prediction, and generation in networks of spiking neurons
Neuro-inspired Computational Elements Workshop, NICE, RWTH AachenHeidelberg, RWTH Aachen, Germany, 16 Mar 2021 - 19 Mar 20212021-03-162021-03-19 BibTeX | EndNote: XML, Text | RIS

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Sequence learning, prediction, and generation in networks of spiking neurons
Neuro-inspired Computational Elements Workshop, NICE, RWTH AachenHeidelberg, RWTH Aachen, Germany, 16 Mar 2021 - 19 Mar 20212021-03-162021-03-19 BibTeX | EndNote: XML, Text | RIS

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Sequence learning, prediction, and generation in networks of spiking neurons
NEST Conference, OnlineOnline, Online, 28 Jun 2021 - 29 Jun 20212021-06-282021-06-29 BibTeX | EndNote: XML, Text | RIS

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Sequence learning, prediction, and generation in networks of spiking neurons
CNS conference, OnlineOnline, Online, 3 Jul 2021 - 7 Jul 20212021-07-032021-07-07 BibTeX | EndNote: XML, Text | RIS

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Sequence learning, prediction, and replay in networks of spiking neurons
arXiv () OpenAccess  Download fulltext Files  Download fulltextFulltext Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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An Ag/HfO2/Pt Threshold Switching Device with an Ultra-Low Leakage (< 10 fA), High On/Off Ratio (> 1011), and Low Threshold Voltage (< 0.2 V) for Energy-Efficient Neuromorphic Computing
IEEE International Memory Workshop, IMW 2021, virtualvirtual, virtual, 13 May 2021 - 16 May 20212021-05-132021-05-16 BibTeX | EndNote: XML, Text | RIS

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Integrate and Fire Neurons Based on Diffusive Memristors for Spiking Neural Networks
International Conference on Neuromorphic Systems 2021, virtualvirtual, virtual, 22 Jul 2021 - 23 Jul 20212021-07-222021-07-23 BibTeX | EndNote: XML, Text | RIS

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Integrate and Fire Neurons Based on Diffusive Memristors for Spiking Neural Networks
Integrate and Fire Neurons Based on Diffusive Memristors for Spiking Neural Networks, virtualvirtual, virtual, 22 Jul 2021 - 24 Jul 20212021-07-222021-07-24 BibTeX | EndNote: XML, Text | RIS

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Enhanced Performance of Ag/HfO2/Pt-based Diffusive Threshold Switches for Energy-Efficient Neuromorphic Computing
Materials Research Society Fall Meeting 2021, MRS, virtualvirtual, virtual, 5 Dec 2021 - 8 Dec 20212021-12-052021-12-08 BibTeX | EndNote: XML, Text | RIS

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An Ag/HfO2/Pt Threshold Switching Device with an Ultra-Low Leakage (< 10 fA), High On/OffRatio (> 1011), and Low Threshold Voltage (< 0.2 V) for Energy-Efficient Neuromorphic Computing
2021 IEEE International Memory Workshop (IMW) : [Proceedings] - IEEE, 2021. - ISBN 978-1-7281-8517-0 - doi:10.1109/IMW51353.2021.9439601
2021 IEEE International Memory Workshop (IMW), DresdenDresden, Germany, 16 May 2021 - 19 May 20212021-05-162021-05-19
IEEE 115 pp. () [10.1109/IMW51353.2021.9439601]  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Metavalent Bonding in Solids: Characteristic Representatives, Their Properties, and Design Options
Physica status solidi / Rapid research letters 15(3), 2000482 () [10.1002/pssr.202000482] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Stochastically Switching HfO2/TiOx ReRAM Devices for Spiking Neural Network Synapses
Materials Research Society Fall Meeting 2021, MRS, virtualvirtual, virtual, 6 Dec 2021 - 8 Dec 20212021-12-062021-12-08 BibTeX | EndNote: XML, Text | RIS

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Nanoionic memristive phenomena in metal oxides: the valence change mechanism
Advances in physics 70(2), 155-349 () [10.1080/00018732.2022.2084006] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Metavalent Bonding in Crystalline Solids: How Does It Collapse?
Advanced materials 33(39), 2102356 - () [10.1002/adma.202102356] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Exploring Area-Dependent Pr0.7Ca0.3MnO3-Based Memristive Devices as Synapses in Spiking and Artificial Neural Networks
Frontiers in neuroscience 15, 661261 () [10.3389/fnins.2021.661261] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Chemical structure of conductive filaments in tantalum oxide memristive devices and its implications for the formation mechanism
ICAMD, Jeju IslandJeju Island, South Korea, 6 Dec 2021 - 10 Dec 20212021-12-062021-12-10 BibTeX | EndNote: XML, Text | RIS

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Current-limiting amplifier for high speed measurement of resistive switching data
Review of scientific instruments 92(5), 054701 - () [10.1063/5.0047571] Embargoed OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Comments on “Experimental Demonstration of Memristor-Aided Logic (MAGIC) Using Valence Change Memory (VCM)”
IEEE transactions on electron devices 68(11), 5925 - 5925 () [10.1109/TED.2021.3109855]  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Nanoscale metal oxide memristive devices for neuromorphic computation
Electroceramics XVII, virtualvirtual, virtual, 24 Aug 2021 - 28 Aug 20212021-08-242021-08-28 BibTeX | EndNote: XML, Text | RIS

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50x Endurance Improvement in TaOx RRAM by Extrinsic Doping
2021 IEEE International Memory Workshop (IMW) : [Proceedings] - IEEE, 2021. - ISBN 978-1-7281-8517-0 - doi:10.1109/IMW51353.2021.9439591
2021 IEEE International Memory Workshop (IMW), DresdenDresden, Germany, 16 May 2021 - 19 May 20212021-05-162021-05-19
IEEE 9 pp. () [10.1109/IMW51353.2021.9439591] BibTeX | EndNote: XML, Text | RIS

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Tuning the Memory Window of TaOx ReRAM Using the RF Sputtering Power
2021 IEEE International Symposium on Circuits and Systems (ISCAS), DaeguDaegu, Korea, 22 May 2021 - 28 May 20212021-05-222021-05-28 Tuning the Memory Window of TaOx ReRAM using the RF Sputtering Power 978-1-7281, 978-1-7281-9201 () [10.1109/ISCAS51556.2021.9401584]  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Physics-Based Modeling of HRS Instability and Retention Phenomena in Filamentary VCM ReRAM
Memrisys 2021, TsukubaTsukuba, Japan, 1 Nov 2021 - 5 Nov 20212021-11-012021-11-05 BibTeX | EndNote: XML, Text | RIS

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A Consistent Model for Short-Term Instability and Long-Term Retention in Filamentary Oxide-Based Memristive Devices
ACS applied materials & interfaces 13(48), 58066 - 58075 () [10.1021/acsami.1c14667] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Standards for the Characterization of Endurance in Resistive Switching Devices
ACS nano 15(11), 17214 - 17231 () [10.1021/acsnano.1c06980] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Nb‐Mediated Grain Growth and Grain‐Boundary Engineering in Mg 3 Sb 2 ‐Based Thermoelectric Materials
Advanced functional materials 31(28), 2100258 - () [10.1002/adfm.202100258] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Reliability Aspects of Memristive Devices for Computation-in-Memory Applications
2021 17th International Workshop on Cellular Nanoscale Networks and their Applications (CNNA) : [Proceedings] - IEEE, 2021. - ISBN 978-1-6654-3948-0 - doi:10.1109/CNNA49188.2021.9610760
2021 17th International Workshop on Cellular Nanoscale Networks and their Applications (CNNA), CataniaCatania, Italy, 29 Sep 2021 - 1 Oct 20212021-09-292021-10-01
IEEE 1 pp. () [10.1109/CNNA49188.2021.9610760]  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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The importance of singly charged oxygen vacancies for electrical conduction in monoclinic HfO 2
Journal of applied physics 129(2), 025104 - () [10.1063/5.0036024] Embargoed OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Theory and experimental verification of configurable computing with stochastic memristors
Scientific reports 11(1), 4218 () [10.1038/s41598-021-83382-y] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Phase‐Change and Ovonic Materials (Second Edition)
Physica status solidi / Rapid research letters 15(3), 2100078 - () [10.1002/pssr.202100078] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Fully in situ Nb/InAs-nanowire Josephson junctions by selective-area growth and shadow evaporation
Nanoscale advances 3(5), 1413 - 1421 () [10.1039/D0NA00999G] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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The potential of chemical bonding to design crystallization and vitrification kinetics
Nature Communications 12(1), 4978 () [10.1038/s41467-021-25258-3] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Review of Manufacturing Process Defects and Their Effects on Memristive Devices
Journal of electronic testing 47, 1 () [10.1007/s10836-021-05968-8] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Approaching the Glass Transition Temperature of GeTe by Crystallizing Ge 15 Te 85
Physica status solidi / Rapid research letters 15(3), 2000478 - () [10.1002/pssr.202000478] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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How to Identify Lone Pairs, Van der Waals Gaps, and Metavalent Bonding Using Charge and Pair Density Methods: From Elemental Chalcogens to Lead Chalcogenides and Phase‐Change Materials
Physica status solidi / Rapid research letters 15(11), 2000534 - () [10.1002/pssr.202000534]  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Triggering phase-coherent spin packets by pulsed electrical spin injection across an Fe/GaAs Schottky barrier
Physical review / B 104(19), 195202 () [10.1103/PhysRevB.104.195202] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Trade‐Off Between Data Retention and Switching Speed in Resistive Switching ReRAM Devices
Advanced electronic materials 7(1), 2000815 () [10.1002/aelm.202000815] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Intrinsic RESET Speed Limit of Valence Change Memories
ACS applied electronic materials 3(12), 5563 - 5572 () [10.1021/acsaelm.1c00981] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Impact of the Ohmic Electrode on the Endurance of Oxide-Based Resistive Switching Memory
IEEE transactions on electron devices 68(3), 1024 - 1030 () [10.1109/TED.2021.3049765] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Nanoscale characterization of single layer graphene on α-Al2O3 (0001)
Graphene Week, StrasbourgStrasbourg, France (virtual), 20 Sep 2021 - 24 Sep 20212021-09-202021-09-24 OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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CVD growth of single layer graphene on α-Al2O3 and multiscale analysis of MoS2/Graphene/α-Al2O3 2D-layer stacks
Neurotec General Assemby, JülichJülich, Germany, 18 Nov 2021 - 18 Nov 20212021-11-182021-11-18 OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Non-volatile photonic Applications with Phase Change Materials
Photonics West San Francisco, San FranciscoSan Francisco, USA, 6 Mar 2021 - 11 Mar 20212021-03-062021-03-11 BibTeX | EndNote: XML, Text | RIS

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Metavalent Bonding in Solids: Provocation or Promise?
2021 Virtual MRS Spring Meeting, SeattleSeattle, USA, 17 Apr 2021 - 23 Apr 20212021-04-172021-04-23 BibTeX | EndNote: XML, Text | RIS

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Functional Materials by Design:Developing Treasure Maps with Quantum Chemistry
MRS Fall Meeting, BostonBoston, USA, 6 Dec 2021 - 8 Dec 20212021-12-062021-12-08 BibTeX | EndNote: XML, Text | RIS

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Advanced Functional Materials by Design:The Prospects of combining Artificial Intelligence with Quantum Chemistry
E-MRS Warsaw, WarsawWarsaw, Poland, 20 Sep 2021 - 23 Sep 20212021-09-202021-09-23 BibTeX | EndNote: XML, Text | RIS

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Phase Change Memory Materials by Design
14th International Conference on Solid State Chemistry (SSC 2021), TrencinTrencin, Slovakia, 14 Jun 2021 - 17 Jun 20212021-06-142021-06-17 BibTeX | EndNote: XML, Text | RIS

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Metavalent Bonding in Phase Change Materials:Provocation or Promise?
EPCOS 2021, OxfordOxford, UK, 13 Sep 2021 - 15 Sep 20212021-09-132021-09-15 BibTeX | EndNote: XML, Text | RIS

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Metavalent Bonding in Solids: Provocation or Promise?
TU München, MünchenMünchen, Germany, 1 Feb 2021 - 1 Feb 20212021-02-012021-02-01 BibTeX | EndNote: XML, Text | RIS

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Crystallization and Vitrification Kinetics by Design: The Role of Chemical Bonding
MRS India, virtualvirtual, India, 20 Dec 2021 - 22 Dec 20212021-12-202021-12-22 BibTeX | EndNote: XML, Text | RIS

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Materials Screening for Disorder‐Controlled Chalcogenide Crystals for Phase‐Change Memory Applications
Advanced materials 33(9), 2006221 - () [10.1002/adma.202006221] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Redox-based Memristive Switches for Neuromorphic Computing
Cellular Nanoscale Networks, CataniaCatania, Italy, 28 Sep 2021 - 30 Sep 20212021-09-282021-09-30 BibTeX | EndNote: XML, Text | RIS

Letzte Änderung: 09.12.2022