Study of Resistive Switching Dynamics and Memory States Equilibria in Analog Filamentary Conductive-Metal-Oxide/HfOx ReRAM via Compact Modeling

11 September 2025

A physics-based compact model for Conductive-Metal-Oxide/HfOx ReRAM, accounting for ion dynamics, electronic conduction, and thermal effects, is presented. Accurate and versatile simulations of analog non-volatile conductance modulation and memory state stabilization enable reliable circuit-level studies, advancing the optimization of neuromorphic and memory systems, driven by device and material physics understanding.

Autors: Matteo Galetta, Donato Francesco Falcone, Victoria Clerico, Wooseok Choi, Stephan Menzel, Antonio La Porta, Tommaso Stecconi, Folkert Horst, Bert Jan Offrein, Valeria Bragaglia.
Advanced Electronic Materials (early view), 2025, DOI: https://doi.org/10.1002/aelm.202500373

Gemeinsam mit IBM
Funding: Neurotec (16ME0398K)

Contact

Dr.-Ing. Stephan Menzel