In refereed Journals 2023

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Correlation between Electronic Structure, Microstructure, and Switching Mode in Valence Change Mechanism Al 2 O 3 /TiO x ‐Based Memristive Devices
Advanced electronic materials 9(12), 2300520 () [10.1002/aelm.202300520] OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Tailor-made synaptic dynamics based on memristive devices
Frontiers in electronic materials 3, 1061269 () [10.3389/femat.2023.1061269] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Bit slicing approaches for variability aware ReRAM CIM macros
Information technology 0(0), 1 () [10.1515/itit-2023-0018] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Ternary Łukasiewicz logic using memristive devices
Neuromorphic computing and engineering 3(4), 044001 - () [10.1088/2634-4386/acfbf3] OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Influence of moisture on the ferroelectric properties of sputtered hafnium oxide thin films
Journal of applied physics 134(18), 185106 () [10.1063/5.0171345] OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Coherent noise enables probabilistic sequence replay in spiking neuronal networks
PLoS Computational Biology 19(5), 5 () [10.1371/journal.pcbi.1010989] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Sequence learning in a spiking neuronal network with memristive synapses
Neuromorphic computing and engineering 3, 034014 () [10.1088/2634-4386/acf1c4] OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Improved Arithmetic Performance by Combining Stateful and Non‐Stateful Logic in Resistive Random Access Memory 1T–1R Crossbars
Advanced intelligent systems 6(3), 2300579 () [10.1002/aisy.202300579] OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Simulating the filament morphology in electrochemical metallization cells
Neuromorphic computing and engineering 3(2), 024010 - () [10.1088/2634-4386/acdbe5] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Memristive devices for metrological applications
Acta IMEKO 12(3), 1 - 5 () [10.21014/actaimeko.v12i3.1450] OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Powering internet-of-things from ambient energy: a review
JPhys energy 5(2), 022001 - () [10.1088/2515-7655/acb5e6] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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SET Kinetics of Ag/HfO2-Based Diffusive Memristors under Various Counter-Electrode Materials
Micromachines 14(3), 571 - () [10.3390/mi14030571] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Electrochemical Memristor‐Based Artificial Neurons and Synapses – fundamentals, applications, and challenges
Advanced materials 35(37), 2301924 () [10.1002/adma.202301924] OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Chemical Influence of Carbon Interface Layers in Metal/Oxide Resistive Switches
ACS applied materials & interfaces 15(14), 18528–18536 () [10.1021/acsami.3c00920] OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Lateral Electrochemical Metallization Cells for Reconfigurable Interconnect Systems
IEEE journal of the Electron Devices Society 11, 432 - 437 () [10.1109/JEDS.2023.3297855] OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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A Physical Description of the Variability in Single‐ReRAM Devices and Hardware‐Based Neuronal Networks
Advanced intelligent systems 1, 2300129 () [10.1002/aisy.202300129] OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Crystal-facet-dependent surface transformation dictates the oxygen evolution reaction activity in lanthanum nickelate
Nature Communications 14(1), 8284 () [10.1038/s41467-023-43901-z] OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Impact of Carbon Impurities on Air Stability of MOCVD 2D-MoS2
Surfaces 6(4), 351 - 363 () [10.3390/surfaces6040025] OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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A High-Entropy Oxide as High-Activity Electrocatalyst for Water Oxidation
ACS nano 17(6), 5329–5339 () [10.1021/acsnano.2c08096] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Deeper mechanistic insights into epitaxial nickelate electrocatalysts for the oxygen evolution reaction
Chemical communications 59(31), 4562 - 4577 () [10.1039/D3CC00325F] OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Dual‐Mode Operation of Epitaxial Hf 0.5 Zr 0.5 O 2 : Ferroelectric and Filamentary‐Type Resistive Switching
Physica status solidi / A 1, pssa.202300409 () [10.1002/pssa.202300409]  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Critical Analysis of Thermodiffusion‐Induced Unipolar Resistive Switching in a Metal‐Oxide‐Metal Memristive Device
Physica status solidi / A 1, 2300407 () [10.1002/pssa.202300407] BibTeX | EndNote: XML, Text | RIS

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Study of Ni–Cr / CrN bilayer thin films resistor prepared by magnetron sputtering
Vacuum 213, 112085 - () [10.1016/j.vacuum.2023.112085] OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Effect of electrode materials on resistive switching behaviour of NbOx-based memristive devices
Scientific reports 13(1), 17003 () [10.1038/s41598-023-44110-w] OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Resistive switching and role of interfaces in memristive devices based on amorphous NbO x grown by anodic oxidation
Physical chemistry, chemical physics 25(21), 14766 - 14777 () [10.1039/D3CP01160G] OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Editorial: Focus issue on 2D materials for neuromorphic computing
Neuromorphic computing and engineering 3(1), 010201 - () [10.1088/2634-4386/acba3f] OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Microstructural and dielectric properties of Ba0.45Mg0.05Sr0.5-x CaxTiO3 high entropy ceramics
Materials chemistry and physics 296, 127290 - () [10.1016/j.matchemphys.2022.127290] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Microwave synthesis of molybdenene from MoS2
Nature nanotechnology 18(12), 1430 - 1438 () [10.1038/s41565-023-01484-2] OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Eightwise switching mechanism in memristive SrTiO 3 devices and its implications on the device performance
Physica status solidi / A 1, pssa.202300483 () [10.1002/pssa.202300483]  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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In-Gap States of HfO 2 Nanoislands Driven by Crystal Nucleation: Implications for Resistive Random-Access Memory Devices
ACS applied nano materials 6(1), 148-159 () [10.1021/acsanm.2c04165] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Spatio‐Temporal Correlations in Memristive Crossbar Arrays due to Thermal Effects
Advanced functional materials 33(22), 2213943 - () [10.1002/adfm.202213943] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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System model of neuromorphic sequence learning on a memristive crossbar array
Neuromorphic computing and engineering 3, 024002 () [10.1088/2634-4386/acca45] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Effect of Oxygen Exchange between Two Oxide Layers of a Memristive Bilayer Valence-Change Memory Cell on the Switching Polarity
Physical review applied 19(4), 044084 () [10.1103/PhysRevApplied.19.044084] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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A Study of the Electroforming Process in 1T1R Memory Arrays
IEEE transactions on computer-aided design of integrated circuits and systems 42(2), 558 - 568 () [10.1109/TCAD.2022.3175947] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Recent Advances and Future Prospects for Memristive Materials, Devices, and Systems
ACS nano 17(13), 11994 - 12039 () [10.1021/acsnano.3c03505] Embargoed OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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> 85% indium reduction for high-efficiency silicon heterojunction solar cells with aluminum-doped zinc oxide contacts
Solar energy materials & solar cells 251, 112120 () [10.1016/j.solmat.2022.112120] Embargoed OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Migration-Enhanced Metal–Organic Chemical Vapor Deposition of Wafer-Scale Fully Coalesced WS 2 and WSe 2 Monolayers
Crystal growth & design 23(3), 1547 - 1558 () [10.1021/acs.cgd.2c01134]  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Resistive Switching and Current Conduction Mechanisms in Hexagonal Boron Nitride Threshold Memristors with Nickel Electrodes
Advanced functional materials 1, 2300428 () [10.1002/adfm.202300428] BibTeX | EndNote: XML, Text | RIS

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Reversibility limitations of metal exsolution reactions in niobium and nickel co-doped strontium titanate
Journal of materials chemistry / A 11(33), 17718-17727 () [10.1039/D3TA02927A] OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Enhanced metal exsolution at the non-polar (001) surfaces of multi-faceted epitaxial thin films
JPhys energy 5(1), 014002 - () [10.1088/2515-7655/ac9dbf] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Reliability Aspects of 28 nm BEOL integrated ReRAM
Physica status solidi / A 1, pssa.202300401 () [10.1002/pssa.202300401]  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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The MoS 2 -Graphene-Sapphire Heterostructure: Influence of Substrate Properties on the MoS 2 Band Structure
The journal of physical chemistry / C 127(22), 10878–10887 () [10.1021/acs.jpcc.3c02503] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Review on Resistive Switching Devices Based on Multiferroic BiFeO3
Nanomaterials 13(8), 1325 - () [10.3390/nano13081325] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

Last Modified: 16.02.2024