Recent Publications:
1. Parrini, L., Soliman, T., Hettwer, B., De La Parra, C., Borrmann, J. M., Singh, S., Rana, V. et al. (2025). Neural in-memory checksums: An error detection and correction technique for safe in-memory inference. Philosophical Transactions A, 383(2288), 20230399.
2. Glint, T., Paul, G., Bende, A., Dittmann, R., & Rana, V. (2024). Resilience of digital and analog RRAM-based ML models to device variability: A comparative study. In 2024 31st IEEE International Conference on Electronics, Circuits and Systems (ICECS).
3. Schmitt, N., Messaris, I., Demirkol, A. S., Ntinas, V., Prousalis, D., Tetzlaff, R., Rana, V. et al. (2024). Experimental evidence for local fading memory effects in TaOx ReRAM cells. In 2024 IEEE International Conference on Metrology for eXtended Reality (MetroXRAINE).
4. Fritscher, M., Singh, S., Rizzi, T., Baroni, A., Reiser, D., Mallah, M., Hartmann, D., Rana, V. et al. (2024). A flexible and fast digital twin for RRAM systems applied for training resilient neural networks. Scientific Reports, 14(1), 23695.
5. Singh, S., Bende, A., Jha, C. K., Rana, V., Drechslert, R., Patkar, S., & Merchant, F. (2024). In-memory mirroring: Cloning without reading. In 2024 IFIP/IEEE 32nd International Conference on Very Large Scale Integration (VLSI-SoC).