2011

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Structural and optical properties of InGaN–GaN nanowire heterostructures grown by molecular beam epitaxy
Journal of applied physics 109(1), 014309 - () [10.1063/1.3530634] OpenAccess  Download fulltext Files  Download fulltextFulltext Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Electrical properties of rolled-up p-type Si/SiGe heterostructures
Applied physics letters 98(19), 192109 - () [10.1063/1.3584869] OpenAccess  Download fulltext Files  Download fulltextFulltext Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Transport in graphene nanostructures
Frontiers of physics 6(3), 271 - 293 () [10.1007/s11467-011-0182-3]  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Comparison of strained SiGe heterostructure-on-insulator (001) and (110) PMOSFETs: C–V characteristics, mobility, and ON currentgi-9
Solid state electronics 65-66, 64 - 71 () [10.1016/j.sse.2011.06.021]  Download fulltext Files  Download fulltextFulltext BibTeX | EndNote: XML, Text | RIS

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Electronic Phase Coherence in InAs Nanowires
Nano letters 11(9), 3550 - 3556 () [10.1021/nl201102a]  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Low-temperature conductance of the weak junction in InAs nanowire in the field of AFM scanning gate
JETP letters 93(1), 10-14 () [10.1134/S0021364011010103]  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Structural and optical properties of InGaN - GaN nanowire heterostructures grown by Molecular Beam Epitaxy
Journal of applied physics 22, 014309 () [10.1088/0957-4484/22/7/075601] Allianz-OA  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Selective-area catalyst-free MBE growth of GaN nanowires using a patterned oxide layers
Nanotechnology 22, 095603 () [10.1088/0957-4484/22/9/095603] BibTeX | EndNote: XML, Text | RIS

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Influence of the adatom diffusion on selective growth of GaN nanowire regular arrays
Applied physics letters 98, 103102 () [10.1063/1.3559618] Allianz-OA  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Properties of uniform diameter InN nanowires obtained under Si doping
Nanotechnology 22, 125704 () [10.1088/0957-4484/22/12/125704] BibTeX | EndNote: XML, Text | RIS

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Surface-induced effects in GaN nanowires
Journal of materials research 26, 2157 - 2168 () [10.1557/jmr.2011.211] BibTeX | EndNote: XML, Text | RIS

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Doping of III-Nitride Nanowires Grown by Molecular Beam Epitaxy
IEEE journal of selected topics in quantum electronics 17, 859 - 868 () [10.1109/JSTQE.2010.2092416] BibTeX | EndNote: XML, Text | RIS

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New method of creation of a rearrangeable local Coulomb potential profile and its application for investigations of local conductivity of InAs nanowires
Physica / E 44, 690 - 695 () [10.1016/j.physe.2011.11.010] BibTeX | EndNote: XML, Text | RIS

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Effect of Si-doping on InAs nanowire transport and morphology
Journal of applied physics 110, 053709 () [10.1063/1.3631026] Allianz-OA  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Structural and Electrical Properties of Lanthanum Gadolinium Oxide: Ceramic and Thin Films for High-k Application
Integrated ferroelectrics 125, 44 - 52 () [10.1080/10584587.2011.574039] BibTeX | EndNote: XML, Text | RIS

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Etching titanium nitride gate stacked on high-k dielectric
Microelectronic engineering 88, 2541 - 2543 () [10.1016/j.mee.2011.02.049] BibTeX | EndNote: XML, Text | RIS

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Giant mesoscopic photoconductance fluctuations in Ge/Si quantum dot system
Applied physics letters 98, 142101 () [10.1063/1.3574022] Allianz-OA  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Mapping and statistics of ferroelectric domain boundary angles and types
Applied physics letters 99, 162902 () [10.1063/1.3643155] Allianz-OA  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Field effect transistor based on single crystalline InSb nanowire
Journal of materials chemistry 21, 2459 - 2462 () [10.1039/c0jm03855e] Allianz-OA  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Optical and electrical properties of gold nanowires synthesized by electrochemical deposition
Journal of applied physics 110, 094301 () [10.1063/1.3656733] Allianz-OA  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Manipulating InAs nanowires with submicrometer precision
Review of scientific instruments 82, 113705 () [10.1063/1.3657135] Allianz-OA  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Investigation of the surface properties of gold nanowire arrays
Applied surface science 258, 147 -1 50 () [10.1016/j.apsusc.2011.08.021] BibTeX | EndNote: XML, Text | RIS

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Tensile strained SiGe quantum well infrared photodetectors based on a light-hole ground state
Applied physics letters 98, 211106 () [10.1063/1.3593134] Allianz-OA  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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MBE growth optimization of topological insulator Bi2Te3 films
Journal of crystal growth 324, 115 - 118 () [10.1016/j.jcrysgro.2011.03.008] BibTeX | EndNote: XML, Text | RIS

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Robust surface electronic properties of topological insulators: Bi2Te3 films grown by molecular beam epitaxy
Applied physics letters 98, 222503 () [10.1063/1.3595309] Allianz-OA  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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An Improved Si tunnel Field Effect Transistor with a Buried Strained Si1-xGex Source
IEEE Electron Device Letters 32, 1480 - 1482 () [10.1109/LED.2011.2163696] BibTeX | EndNote: XML, Text | RIS

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Characterization of high- LaLuO3 thin film grown on AlGaN/GaN heterostructure by molecular beam deposition
Applied physics letters 99, 182103 () [10.1063/1.3657521] Allianz-OA  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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High mobility strained Si(0.5)Ge(0.5)/SSOI short channel field effect transistors with TiN/GdScO(3) gate stack
Microelectronic engineering 88, 2955 - 2958 () [10.1016/j.mee.2011.04.030] BibTeX | EndNote: XML, Text | RIS

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Investigation of a hydrogen implantation-induced blistering phenomenon in Si0.70Ge0.30
Semiconductor science and technology 26, 125001 () [10.1088/0268-1242/26/12/125001] BibTeX | EndNote: XML, Text | RIS

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Epitaxial growth of Ni(Al)Si0.7Ge0.3 on Si0.7Ge0.3/Si(100) by Al interlayer mediated epitaxy
Applied physics letters 98, 252101 () [10.1063/1.3601464] Allianz-OA  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Nanoscale photoelectron ionisation detector based of lanthanum hexaboride
Physica status solidi / A 208, 1241 - 1245 () [10.1002/pssa.201000966] BibTeX | EndNote: XML, Text | RIS

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Analytical Model for the Extraction of Flaw-Induced Current Interactions for SQUID NDE
IEEE transactions on applied superconductivity 21, 3442 - 3446 () [10.1109/TASC.2011.2119373] BibTeX | EndNote: XML, Text | RIS

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Monolithic Integration of Ultrafast Photodetector and MESFET in the GaN Material System
IEEE photonics technology letters 23, 1189 - 1191 () [10.1109/LPT.2011.2157816] BibTeX | EndNote: XML, Text | RIS

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Magnetism in GaN layers implanted by La, Gd, Dy and Lu
Thin solid films 519, 6120 - 6125 () [10.1016/j.tsf.2011.04.110] BibTeX | EndNote: XML, Text | RIS

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Different architectures of relaxed Si1-xGe/Si preudo-substrates grown by low-pressure chemical vapor deposition: Structural and morphological characteristics
Journal of crystal growth 328, 18-24 () [10.1016/j.jcrysgro.2011.06.035] BibTeX | EndNote: XML, Text | RIS

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Millisecond flash-lamp annealing of LaLuO3
Microelectronic engineering 88, 1346 - 1348 () [10.1016/j.mee.2011.03.126] BibTeX | EndNote: XML, Text | RIS

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Study of interfaces and band offsets in TiN/amorphous LaLu=3 gate stacks
Microelectronic engineering 88, 1495 - 1498 () [10.1016/j.mee.2011.03.051] BibTeX | EndNote: XML, Text | RIS

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LaScO3 as higher-k dielectric for p-MOSFETs
Microelectronic engineering 88, 1323 - 1325 () [10.1016/j.mee.2011.03.048] BibTeX | EndNote: XML, Text | RIS

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Silicon Nanowire Tunneling Field-Effect Transistor Arrays: Improving Subthreshold Performance Using Excimer Laser Annealing
IEEE Transactions on Electron Devices 58, 1822 - 1829 () [10.1109/TED.2011.2135355] BibTeX | EndNote: XML, Text | RIS

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Improved NiSi0.8Ge0.2/Si0.8Ge0.2 Contacs by C+ Pre-Implantation
Electrochemical and solid-state letters 14, H261-H263 () [10.1149/1.3578387] BibTeX | EndNote: XML, Text | RIS

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High mobility compressive strained Si0.5Ge0.5 quantum well p-MOSFETs with higher-k/metal-gate
Solid state electronics 62(1), 185 - 188 () [10.1016/j.sse.2011.03.002] BibTeX | EndNote: XML, Text | RIS

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Integration of MOSFETs with SiGe dots as stressor material
Solid state electronics 60, 75 - 83 () [10.1016/j.sse.2011.01.038] BibTeX | EndNote: XML, Text | RIS

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X-ray Nanodiffraction on a Single SiGe Quantum Dot inside a Functioning Field-Effect Transistor
Nano letters 11, 2875 - 2880 () [10.1021/nl2013289] pmc   Download fulltextFulltext by Pubmed Central BibTeX | EndNote: XML, Text | RIS

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Zn nanoparticles irradiated with swift heavy ions at low fluences: Optically-detected shape elongation induced by nonoverlapping ion tracks
Physical review / B 83(20), 205401 () [10.1103/PhysRevB.83.205401] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Influence of the substrate temperature on the Curie temperature and charge carrier density of epitaxial Gd-doped EuO films
Applied physics letters 98, 102110 () [10.1063/1.3563708] Allianz-OA  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Rare-Earth Scandate/TiN Gate Stacks in SOI MOSFETs Fabricated with a Full Replacement Gate Process
IEEE Transactions on Electron Devices 58, 617 - 622 () [10.1109/TED.2010.2096509] BibTeX | EndNote: XML, Text | RIS

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Oxygen Permeation and Stability Investigations on MIEC Membrane Materials Under Operating Conditions for Power Plant Processes
Journal of membrane science 370, () [10.1016/j.memsci.2010.12.021] BibTeX | EndNote: XML, Text | RIS

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High quality TbMnO3 films deposited on YAlO3
Journal of alloys and compounds 509, 5061 - 5063 () [10.1016/j.jallcom.2011.03.015] BibTeX | EndNote: XML, Text | RIS

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Enhanced Raman Scattering of Ultramarine on Au-coated Ge/Si-nanostructures
Plasmonics 6, 413 - 418 () [10.1007/s11468-011-9219-2] BibTeX | EndNote: XML, Text | RIS

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Spin precession and modulation in ballistic cylindrical nanowires due to the Rashba effect
Physical review / B 83(11), 115305 () [10.1103/PhysRevB.83.115305] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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An Efficient SQUID NDE Defect Detection Approach by Using an Adaptive Finite-Element Modeling
Journal of superconductivity and novel magnetism 24, () [10.1007/s10948-010-0860-3] BibTeX | EndNote: XML, Text | RIS

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Integration of LaLuO3 (k 30) as High-k Dielectric on Strained and Unstrained SOI MOSFETs with Replacement Gate Process
IEEE Electron Device Letters 32, 15 - 17 () [10.1109/LED.2010.2089423] BibTeX | EndNote: XML, Text | RIS

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CV measurements on LaLuO3 stack metal-oxide-semiconductor capacitor using a new three-pulse technique
Journal of vacuum science & technology / B 29, 01AB03 () [10.1116/1.3533267] BibTeX | EndNote: XML, Text | RIS

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Rare-earth oxide/TiN gate stacks on high mobility strained silicon on insulator for fully depleted metal-oxide-semiconductor field-effect transistors
Journal of vacuum science & technology / B 29, 01A903 () [10.1116/1.3533760] BibTeX | EndNote: XML, Text | RIS

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Flux growth of ZnO crystals doped by transition metals
Journal of crystal growth 314, () [10.1016/j.jcrysgro.2010.11.148] BibTeX | EndNote: XML, Text | RIS

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Atomic layer deposition of HfO2 and Al2O3 layers on 300 mm Si wafers for gate stack technology
Journal of vacuum science & technology / B 29, 01A301 () [10.1116/1.3521374] BibTeX | EndNote: XML, Text | RIS

Letzte Änderung: 20.05.2022