2011
Journal Article
Structural and optical properties of InGaN–GaN nanowire heterostructures grown by molecular beam epitaxy
Journal of applied physics 109(1), 014309 - (2011) [10.1063/1.3530634]
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Electrical properties of rolled-up p-type Si/SiGe heterostructures
Applied physics letters 98(19), 192109 - (2011) [10.1063/1.3584869]
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Transport in graphene nanostructures
Frontiers of physics 6(3), 271 - 293 (2011) [10.1007/s11467-011-0182-3]
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Comparison of strained SiGe heterostructure-on-insulator (001) and (110) PMOSFETs: C–V characteristics, mobility, and ON currentgi-9
Solid state electronics 65-66, 64 - 71 (2011) [10.1016/j.sse.2011.06.021]
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Journal Article
Electronic Phase Coherence in InAs Nanowires
Nano letters 11(9), 3550 - 3556 (2011) [10.1021/nl201102a]
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Low-temperature conductance of the weak junction in InAs nanowire in the field of AFM scanning gate
JETP letters 93(1), 10-14 (2011) [10.1134/S0021364011010103]
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Journal Article
Structural and optical properties of InGaN - GaN nanowire heterostructures grown by Molecular Beam Epitaxy
Journal of applied physics 22, 014309 (2011) [10.1088/0957-4484/22/7/075601]
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Journal Article
Selective-area catalyst-free MBE growth of GaN nanowires using a patterned oxide layers
Nanotechnology 22, 095603 (2011) [10.1088/0957-4484/22/9/095603]
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Influence of the adatom diffusion on selective growth of GaN nanowire regular arrays
Applied physics letters 98, 103102 (2011) [10.1063/1.3559618]
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Properties of uniform diameter InN nanowires obtained under Si doping
Nanotechnology 22, 125704 (2011) [10.1088/0957-4484/22/12/125704]
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Surface-induced effects in GaN nanowires
Journal of materials research 26, 2157 - 2168 (2011) [10.1557/jmr.2011.211]
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Journal Article
Doping of III-Nitride Nanowires Grown by Molecular Beam Epitaxy
IEEE journal of selected topics in quantum electronics 17, 859 - 868 (2011) [10.1109/JSTQE.2010.2092416]
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New method of creation of a rearrangeable local Coulomb potential profile and its application for investigations of local conductivity of InAs nanowires
Physica / E 44, 690 - 695 (2011) [10.1016/j.physe.2011.11.010]
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Journal Article
Effect of Si-doping on InAs nanowire transport and morphology
Journal of applied physics 110, 053709 (2011) [10.1063/1.3631026]
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Journal Article
Structural and Electrical Properties of Lanthanum Gadolinium Oxide: Ceramic and Thin Films for High-k Application
Integrated ferroelectrics 125, 44 - 52 (2011) [10.1080/10584587.2011.574039]
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Journal Article
Etching titanium nitride gate stacked on high-k dielectric
Microelectronic engineering 88, 2541 - 2543 (2011) [10.1016/j.mee.2011.02.049]
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Journal Article
Giant mesoscopic photoconductance fluctuations in Ge/Si quantum dot system
Applied physics letters 98, 142101 (2011) [10.1063/1.3574022]
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Mapping and statistics of ferroelectric domain boundary angles and types
Applied physics letters 99, 162902 (2011) [10.1063/1.3643155]
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Journal Article
Field effect transistor based on single crystalline InSb nanowire
Journal of materials chemistry 21, 2459 - 2462 (2011) [10.1039/c0jm03855e]
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Optical and electrical properties of gold nanowires synthesized by electrochemical deposition
Journal of applied physics 110, 094301 (2011) [10.1063/1.3656733]
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Manipulating InAs nanowires with submicrometer precision
Review of scientific instruments 82, 113705 (2011) [10.1063/1.3657135]
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Investigation of the surface properties of gold nanowire arrays
Applied surface science 258, 147 -1 50 (2011) [10.1016/j.apsusc.2011.08.021]
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Journal Article
Tensile strained SiGe quantum well infrared photodetectors based on a light-hole ground state
Applied physics letters 98, 211106 (2011) [10.1063/1.3593134]
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Journal Article
MBE growth optimization of topological insulator Bi2Te3 films
Journal of crystal growth 324, 115 - 118 (2011) [10.1016/j.jcrysgro.2011.03.008]
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Journal Article
Robust surface electronic properties of topological insulators: Bi2Te3 films grown by molecular beam epitaxy
Applied physics letters 98, 222503 (2011) [10.1063/1.3595309]
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Journal Article
An Improved Si tunnel Field Effect Transistor with a Buried Strained Si1-xGex Source
IEEE Electron Device Letters 32, 1480 - 1482 (2011) [10.1109/LED.2011.2163696]
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Characterization of high- LaLuO3 thin film grown on AlGaN/GaN heterostructure by molecular beam deposition
Applied physics letters 99, 182103 (2011) [10.1063/1.3657521]
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High mobility strained Si(0.5)Ge(0.5)/SSOI short channel field effect transistors with TiN/GdScO(3) gate stack
Microelectronic engineering 88, 2955 - 2958 (2011) [10.1016/j.mee.2011.04.030]
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Journal Article
Investigation of a hydrogen implantation-induced blistering phenomenon in Si0.70Ge0.30
Semiconductor science and technology 26, 125001 (2011) [10.1088/0268-1242/26/12/125001]
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Epitaxial growth of Ni(Al)Si0.7Ge0.3 on Si0.7Ge0.3/Si(100) by Al interlayer mediated epitaxy
Applied physics letters 98, 252101 (2011) [10.1063/1.3601464]
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Nanoscale photoelectron ionisation detector based of lanthanum hexaboride
Physica status solidi / A 208, 1241 - 1245 (2011) [10.1002/pssa.201000966]
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Journal Article
Analytical Model for the Extraction of Flaw-Induced Current Interactions for SQUID NDE
IEEE transactions on applied superconductivity 21, 3442 - 3446 (2011) [10.1109/TASC.2011.2119373]
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Journal Article
Monolithic Integration of Ultrafast Photodetector and MESFET in the GaN Material System
IEEE photonics technology letters 23, 1189 - 1191 (2011) [10.1109/LPT.2011.2157816]
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Journal Article
Magnetism in GaN layers implanted by La, Gd, Dy and Lu
Thin solid films 519, 6120 - 6125 (2011) [10.1016/j.tsf.2011.04.110]
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Journal Article
Different architectures of relaxed Si1-xGe/Si preudo-substrates grown by low-pressure chemical vapor deposition: Structural and morphological characteristics
Journal of crystal growth 328, 18-24 (2011) [10.1016/j.jcrysgro.2011.06.035]
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Journal Article
Millisecond flash-lamp annealing of LaLuO3
Microelectronic engineering 88, 1346 - 1348 (2011) [10.1016/j.mee.2011.03.126]
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Journal Article
Study of interfaces and band offsets in TiN/amorphous LaLu=3 gate stacks
Microelectronic engineering 88, 1495 - 1498 (2011) [10.1016/j.mee.2011.03.051]
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Journal Article
LaScO3 as higher-k dielectric for p-MOSFETs
Microelectronic engineering 88, 1323 - 1325 (2011) [10.1016/j.mee.2011.03.048]
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Journal Article
Silicon Nanowire Tunneling Field-Effect Transistor Arrays: Improving Subthreshold Performance Using Excimer Laser Annealing
IEEE Transactions on Electron Devices 58, 1822 - 1829 (2011) [10.1109/TED.2011.2135355]
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Journal Article
Improved NiSi0.8Ge0.2/Si0.8Ge0.2 Contacs by C+ Pre-Implantation
Electrochemical and solid-state letters 14, H261-H263 (2011) [10.1149/1.3578387]
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Journal Article
High mobility compressive strained Si0.5Ge0.5 quantum well p-MOSFETs with higher-k/metal-gate
Solid state electronics 62(1), 185 - 188 (2011) [10.1016/j.sse.2011.03.002]
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Integration of MOSFETs with SiGe dots as stressor material
Solid state electronics 60, 75 - 83 (2011) [10.1016/j.sse.2011.01.038]
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Journal Article
X-ray Nanodiffraction on a Single SiGe Quantum Dot inside a Functioning Field-Effect Transistor
Nano letters 11, 2875 - 2880 (2011) [10.1021/nl2013289]
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Journal Article
Zn nanoparticles irradiated with swift heavy ions at low fluences: Optically-detected shape elongation induced by nonoverlapping ion tracks
Physical review / B 83(20), 205401 (2011) [10.1103/PhysRevB.83.205401]
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Influence of the substrate temperature on the Curie temperature and charge carrier density of epitaxial Gd-doped EuO films
Applied physics letters 98, 102110 (2011) [10.1063/1.3563708]
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Journal Article
Rare-Earth Scandate/TiN Gate Stacks in SOI MOSFETs Fabricated with a Full Replacement Gate Process
IEEE Transactions on Electron Devices 58, 617 - 622 (2011) [10.1109/TED.2010.2096509]
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Journal Article
Oxygen Permeation and Stability Investigations on MIEC Membrane Materials Under Operating Conditions for Power Plant Processes
Journal of membrane science 370, (2011) [10.1016/j.memsci.2010.12.021]
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Journal Article
High quality TbMnO3 films deposited on YAlO3
Journal of alloys and compounds 509, 5061 - 5063 (2011) [10.1016/j.jallcom.2011.03.015]
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Journal Article
Enhanced Raman Scattering of Ultramarine on Au-coated Ge/Si-nanostructures
Plasmonics 6, 413 - 418 (2011) [10.1007/s11468-011-9219-2]
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Spin precession and modulation in ballistic cylindrical nanowires due to the Rashba effect
Physical review / B 83(11), 115305 (2011) [10.1103/PhysRevB.83.115305]
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An Efficient SQUID NDE Defect Detection Approach by Using an Adaptive Finite-Element Modeling
Journal of superconductivity and novel magnetism 24, (2011) [10.1007/s10948-010-0860-3]
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Integration of LaLuO3 (k 30) as High-k Dielectric on Strained and Unstrained SOI MOSFETs with Replacement Gate Process
IEEE Electron Device Letters 32, 15 - 17 (2011) [10.1109/LED.2010.2089423]
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CV measurements on LaLuO3 stack metal-oxide-semiconductor capacitor using a new three-pulse technique
Journal of vacuum science & technology / B 29, 01AB03 (2011) [10.1116/1.3533267]
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Journal Article
Rare-earth oxide/TiN gate stacks on high mobility strained silicon on insulator for fully depleted metal-oxide-semiconductor field-effect transistors
Journal of vacuum science & technology / B 29, 01A903 (2011) [10.1116/1.3533760]
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Journal Article
Flux growth of ZnO crystals doped by transition metals
Journal of crystal growth 314, (2011) [10.1016/j.jcrysgro.2010.11.148]
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Atomic layer deposition of HfO2 and Al2O3 layers on 300 mm Si wafers for gate stack technology
Journal of vacuum science & technology / B 29, 01A301 (2011) [10.1116/1.3521374]
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