2016
Journal Article
Ballistic Transport Exceeding 28 μm in CVD Grown Graphene
Nano letters 16(2), 1387 - 1391 (2016) [10.1021/acs.nanolett.5b04840]
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Spatial Control of Laser-Induced Doping Profiles in Graphene on Hexagonal Boron Nitride
ACS applied materials & interfaces 8(14), 9377 - 9383 (2016) [10.1021/acsami.6b01727]
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Correspondence: On the nature of strong piezoelectricity in graphene on SiO$_{2}$
Nature Communications 7, 11570 - (2016) [10.1038/ncomms11570]
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Size quantization of Dirac fermions in graphene constrictions
Nature Communications 7, 11528 - (2016) [10.1038/ncomms11528]
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Spin Lifetimes Exceeding 12 ns in Graphene Nonlocal Spin Valve Devices
Nano letters 16(6), 3533 - 3539 (2016) [10.1021/acs.nanolett.6b00497]
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Interplay between nanometer-scale strain variations and externally applied strain in graphene
Physical review / B 93(19), 195438 (2016) [10.1103/PhysRevB.93.195438]
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Encapsulated graphene-based Hall sensors on foil with increased sensitivity
Physica status solidi / B 253(12), 2316-2320 (2016) [10.1002/pssb.201600224]
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Modeling charge relaxation in graphene quantum dots induced by electron-phonon interaction
Physical review / B 93(24), 245423 (2016) [10.1103/PhysRevB.93.245423]
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Journal Article
Line shape of the Raman 2D peak of graphene in van der Waals heterostructures
Physica status solidi / B 253(12), 2326-2330 (2016) [10.1002/pssb.201600283]
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Journal Article
Freeform lens collimating spectrum-folded Hadamard transform near-infrared spectrometer
Optics communications 380, 161 - 167 (2016) [10.1016/j.optcom.2016.06.009]
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Journal Article
Single Exposure Imaging of Talbot Carpets and Resolution Characterization of Detectors for Micro- and Nano- Patterns
Journal of the Optical Society of Korea 20(2), 245 - 250 (2016) [10.3807/JOSK.2016.20.2.245]
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Journal Article
Lloyd’s mirror interference lithography with EUV radiation from a high-harmonic source
Applied physics express 9(7), 076701 - (2016) [10.7567/APEX.9.076701]
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Achromatic Talbot lithography with partially coherent extreme ultraviolet radiation: process window analysis
Journal of micro/nanolithography, MEMS and MOEMS 15(4), 043502 - (2016) [10.1117/1.JMM.15.4.043502]
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Journal Article
Experimental $I$ – $V(T)$ and $C$ – $V$ Analysis of Si Planar p-TFETs on Ultrathin Body
IEEE transactions on electron devices 63(12), 5036 - 5040 (2016) [10.1109/TED.2016.2619740]
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Journal Article
Ion-sensitive field-effect transistor with sSi/Si0.5Ge0.5/sSOI quantum-well for high voltage sensitivity
Microelectronic engineering 163, 115 - 118 (2016) [10.1016/j.mee.2016.06.017]
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Journal Article
Tunable mechanical coupling between driven microelectromechanical resonators
Applied physics letters 109(14), 143507 (2016) [10.1063/1.4964122]
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Journal Article
Effect of ion beam parameters on engineering of nanoscale voids and their stability under post-growth annealing
Applied physics / A 122(3), 227 (2016) [10.1007/s00339-016-9776-5]
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Journal Article
Sn migration control at high temperature due to high deposition speed for forming high-quality GeSn layer
Applied physics express 9(3), 031201 (2016) [10.7567/APEX.9.031201]
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Journal Article
Compositional dependence of the band-gap of Ge$_{1−x−y}$Si$_{x}$Sn$_{y}$ alloys
Applied physics letters 108(24), 242104 - (2016) [10.1063/1.4953784]
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Journal Article
Saturation Photo-Voltage Methodology for Semiconductor/Insulator Interface Trap Spectroscopy
ECS journal of solid state science and technology 5(4), P3031 - P3036 (2016) [10.1149/2.0061604jss]
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Journal Article
Low Temperature Deposition of High-k/Metal Gate Stacks on High-Sn Content (Si)GeSn-Alloys
ACS applied materials & interfaces 8(20), 13133 - 13139 (2016) [10.1021/acsami.6b02425]
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Journal Article
Effect of Zinc Incorporation on the Performance of Red Light Emitting InP Core Nanocrystals
Inorganic chemistry 55(17), 8381 - 8386 (2016) [10.1021/acs.inorgchem.6b00747]
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Journal Article
Dense, Regular GaAs Nanowire Arrays by Catalyst-Free Vapor Phase Epitaxy for Light Harvesting
ACS applied materials & interfaces 8(34), 22484 - 22492 (2016) [10.1021/acsami.6b05581]
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Journal Article
Line Tunneling Dominating Charge Transport in SiGe/Si Heterostructure TFETs
IEEE transactions on electron devices 63(11), 4173 - 4178 (2016) [10.1109/TED.2016.2608383]
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Journal Article
Complementary Strained Si GAA Nanowire TFET Inverter With Suppressed Ambipolarity
IEEE electron device letters 37(8), 950 - 953 (2016) [10.1109/LED.2016.2582041]
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Experimental demonstration of strained Si nanowire GAA n-TFETs and inverter operation with complementary TFET logic at low supply voltages
Solid state electronics 115(Part B), 152 - 159 (2016) [10.1016/j.sse.2015.08.020]
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Journal Article
Opto-electronic characterization of three dimensional topological insulators
Journal of applied physics 120(16), 165301 - (2016) [10.1063/1.4965962]
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Growth, characterization, and transport properties of ternary (Bi $_{1− x}$ Sb $_{x}$ )$_{2}$ Te $_{3}$ topological insulator layers
Journal of physics / Condensed matter 28(49), 495501 - (2016) [10.1088/0953-8984/28/49/495501]
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Journal Article
Engineering of the Curie temperature of epitaxial Sr1−xBaxTiO3 films via strain
Journal of applied physics 120(11), 114101 - (2016) [10.1063/1.4962853]
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Quantum Transport and Nano Angle-resolved Photoemission Spectroscopy on the Topological Surface States of Single Sb$_{2}$Te$_{3}$ Nanowires
Scientific reports 6, 29493 - (2016) [10.1038/srep29493]
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Journal Article
Study of GeSn based heterostructures: towards optimized group IV MQW LEDs
Optics express 24(2), 1358 (2016) [10.1364/OE.24.001358]
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Journal Article
Optically Pumped GeSn Microdisk Lasers on Si
ACS photonics 3(7), 1279 - 1285 (2016) [10.1021/acsphotonics.6b00258]
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Journal Article
Selective area growth of Bi$_{2}$Te$_{3}$ and Sb$_{2}$Te$_{3}$ topological insulator thin films
Journal of crystal growth 443, 38 - 42 (2016) [10.1016/j.jcrysgro.2016.03.012]
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Journal Article
P–N Junctions in Ultrathin Topological Insulator Sb 2 Te 3 /Bi 2 Te 3 Heterostructures Grown by Molecular Beam Epitaxy
Crystal growth & design 16(4), 2057 - 2061 (2016) [10.1021/acs.cgd.5b01717]
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Journal Article
Crystal Phase Transformation in Self-Assembled InAs Nanowire Junctions on Patterned Si Substrates
Nano letters 16(3), 1933 - 1941 (2016) [10.1021/acs.nanolett.5b05157]
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Journal Article
Weak (anti)localization in tubular semiconductor nanowires with spin-orbit coupling
Physical review / B 93(20), 205306 (2016) [10.1103/PhysRevB.93.205306]
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Journal Article
Electronic Properties of Complex Self-Assembled InAs Nanowire Networks
Advanced Electronic Materials 2(6), 1500460 - (2016) [10.1002/aelm.201500460]
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Journal Article
Impact of Tunnel-Barrier Strength on Magnetoresistance in Carbon Nanotubes
Physical review applied 5(5), 054010 (2016) [10.1103/PhysRevApplied.5.054010]
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Journal Article
Nano-light-emitting-diodes based on InGaN mesoscopic structures for energy saving optoelectronics
Applied physics letters 109(4), 161851 (2016) [10.1063/1.4960007]
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Journal Article
Adiabatic Edge Channel Transport in a Nanowire Quantum Point Contact Register
Nano letters 16(7), 4569 - 4575 (2016) [10.1021/acs.nanolett.6b01840]
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Journal Article
Compact extreme ultraviolet source for laboratory-based photoemission spectromicroscopy
Applied physics letters 108(23), 234101 - (2016) [10.1063/1.4953071]
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Journal Article
Si–Ge–Sn alloys: From growth to applications
Progress in crystal growth and characterization of materials 62(1), 1 - 39 (2016) [10.1016/j.pcrysgrow.2015.11.001]
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Journal Article
Quasi 2D electronic states with high spin-polarization in centrosymmetric MoS$_{2}$ bulk crystals
Scientific reports 6, 26197 (2016) [10.1038/srep26197]
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Journal Article
Deposition and characterization of B$_{4}$C/CeO$_{2}$ multilayers at 6.x nm extreme ultraviolet wavelengths
Journal of applied physics 119(9), 095301 - (2016) [10.1063/1.4942656]
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Journal Article
Restorative Self-Image of Rough-Line Grids: Application to Coherent EUV Talbot Lithography
IEEE photonics journal 8(3), 1 - 9 (2016) [10.1109/JPHOT.2016.2553847]
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Journal Article
Laser-assisted vacuum arc extreme ultraviolet source: a comparison of picosecond and nanosecond laser triggering
Journal of physics / D 49(22), 225201 - (2016) [10.1088/0022-3727/49/22/225201]
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Journal Article
Ballistic Transport and Exchange Interaction in InAs Nanowire Quantum Point Contacts
Nano letters 16(5), 3116 - 3123 (2016) [10.1021/acs.nanolett.6b00414]
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Journal Article
Angle-dependent magnetotransport in GaAs/InAs core/shell nanowires
Scientific reports 6, 24573 - (2016) [10.1038/srep24573]
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A model structure for interfacial phase change memories: Epitaxial trigonal Ge$_{1}$Sb$_{2}$Te$_{4}$
Journal of alloys and compounds 679, 285-292 (2016) [10.1016/j.jallcom.2016.04.013]
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Journal Article
Experimental and computational study of zero dimensional metallic behavior at the LaLuO3/SrTiO3 interface
Journal of vacuum science & technology / B 34(2), 021204 - (2016) [10.1116/1.4943570]
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Journal Article
Thermodynamic stability and control of oxygen reactivity at functional oxide interfaces: EuO on ITO
Journal of materials chemistry / C 4(9), 1813 - 1820 (2016) [10.1039/C6TC00170J]
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Journal Article
Dynamics of nuclear spin polarization induced and detected by coherently precessing electron spins in fluorine-doped ZnSe
Physical review / B 93(8), 081409 (2016) [10.1103/PhysRevB.93.081409]
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Journal Article
Direct electro-optical pumping for hybrid CdSe nanocrystal/III-nitride based nano-light-emitting diodes
Applied physics letters 108(6), 061107 - (2016) [10.1063/1.4941923]
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Density of quantum states in quasi-1D layers
Physica / E 78, 49 - 55 (2016) [10.1016/j.physe.2015.11.033]
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Confinement and inhomogeneous broadening effects in the quantum oscillatory magnetization of quantum dot ensemble
Journal of physics / Condensed matter 28(4), 045301 - (2016) [10.1088/0953-8984/28/4/045301]
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Electric field induced relaxor behavior in anisotropically strained SrTiO3 films
Physica / B 485, 78 - 83 (2016) [10.1016/j.physb.2016.01.003]
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