2017
Journal Article
Simulations on the Influence of Spatially Varying Spin Transport Parameters on the Measured Spin Lifetime in Graphene Non-Local Spin Valves
Physica status solidi / B Basic research 254(11), 1700293 - (2017) [10.1002/pssb.201700293]
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Identifying suitable substrates for high-quality graphene-based heterostructures
2D Materials 4(2), 025030 - (2017) [10.1088/2053-1583/aa5b0f]
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Journal Article
High mobility dry-transferred CVD bilayer graphene
Applied physics letters 110(26), 263110 - (2017) [10.1063/1.4990390]
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Dry transfer of CVD graphene using MoS 2 -based stamps
Physica status solidi / Rapid research letters Rapid research letters 11(7), 1700136 - (2017) [10.1002/pssr.201700136]
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Journal Article
High Quality Factor Graphene-Based Two-Dimensional Heterostructure Mechanical Resonator
Nano letters 17(10), 5950 - 5955 (2017) [10.1021/acs.nanolett.7b01845]
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Journal Article
Dry-transferred CVD graphene for inverted spin valve devices
Applied physics letters 111(15), 152402 - (2017) [10.1063/1.5000545]
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Journal Article
From Diffusive to Ballistic Transport in Etched Graphene Constrictions and Nanoribbons
Annalen der Physik 529(11), 1700082 - (2017) [10.1002/andp.201700082]
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Journal Article
Aharonov-Bohm oscillations and magnetic focusing in ballistic graphene rings
Physical review / B 96(20), 205407 (2017) [10.1103/PhysRevB.96.205407]
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Journal Article
Raman Spectroscopy of Lithographically Defined Graphene Nanoribbons - Influence of Size and Defects
Annalen der Physik 529(11), 1700167 - (2017) [10.1002/andp.201700167]
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Journal Article
Benchmarking of Homojunction Strained-Si NW Tunnel FETs for Basic Analog Functions
IEEE transactions on electron devices 64(4), 1441 - 1448 (2017) [10.1109/TED.2017.2665527]
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Experimental Investigation of ${C}$ – ${V}$ Characteristics of Si Tunnel FETs
IEEE electron device letters 38(6), 818 - 821 (2017) [10.1109/LED.2017.2695193]
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Journal Article
Experimental I – V and C – V Analysis of Schottky-Barrier Metal-Oxide-Semiconductor Field Effect Transistors with Epitaxial NiSi 2 Contacts and Dopant Segregation
Chinese physics letters 34(7), 078501 - (2017) [10.1088/0256-307X/34/7/078501]
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Journal Article
Impact of Al addition on the formation of Ni germanosilicide layers under different temperature annealing *
Chinese physics / B B 26(9), 098503 - (2017) [10.1088/1674-1056/26/9/098503]
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Journal Article
Negative Capacitance as Performance Booster for Tunnel FETs and MOSFETs: An Experimental Study
IEEE electron device letters 38(10), 1485 - 1488 (2017) [10.1109/LED.2017.2734943]
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Journal Article
A Steep-Slope Transistor Combining Phase-Change and Band-to-Band-Tunneling to Achieve a sub-Unity Body Factor
Scientific reports 7(1), 355 (2017) [10.1038/s41598-017-00359-6]
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Journal Article
Optical critical points of Si x Ge 1− x − y Sn y alloys with high Si content
Semiconductor science and technology 32(12), 124004 - (2017) [10.1088/1361-6641/aa95d3]
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Journal Article
Experimental examination of tunneling paths in SiGe/Si gate-normal tunneling field-effect transistors
Applied physics letters 111(26), 263504 - (2017) [10.1063/1.4996109]
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Journal Article
Fabrication, Characterization, and Analysis of Ge/GeSn Heterojunction p-Type Tunnel Transistors
IEEE transactions on electron devices 64(10), 4354 - 4362 (2017) [10.1109/TED.2017.2742957]
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Journal Article
Short-range atomic ordering in nonequilibrium silicon-germanium-tin semiconductors
Physical review / B 95(16), 161402 (2017) [10.1103/PhysRevB.95.161402]
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Journal Article
Growth and Optical Properties of Direct Band Gap Ge/Ge 0.87 Sn 0.13 Core/Shell Nanowire Arrays
Nano letters 17(3), 1538 - 1544 (2017) [10.1021/acs.nanolett.6b04627]
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Journal Article
Stencil lithography of superconducting contacts on MBE-grown topological insulator thin films
Journal of crystal growth 477, 183 - 187 (2017) [10.1016/j.jcrysgro.2017.03.035]
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Journal Article
Anisotropic phase coherence in GaAs/InAs core/shell nanowires
Nanotechnology 28(44), 445202 - (2017) [10.1088/1361-6528/aa887d]
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Journal Article
Experimental determination of Rashba and Dresselhaus parameters and g * -factor anisotropy via Shubnikov-de Haas oscillations
New journal of physics 19(10), 103012 - (2017) [10.1088/1367-2630/aa833d]
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Journal Article
Strain relaxation and ambipolar electrical transport in GaAs/InSb core–shell nanowires
Nanoscale 9(46), 18392 - 18401 (2017) [10.1039/C7NR05201D]
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Journal Article
Electrical properties of lightly Ga-doped ZnO nanowires
Semiconductor science and technology 32(12), 125010 - (2017) [10.1088/1361-6641/aa91ef]
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Journal Article
MBE growth of Al/InAs and Nb/InAs superconducting hybrid nanowire structures
Nanoscale 9(43), 16735 - 16741 (2017) [10.1039/C7NR03982D]
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Journal Article
Magnetoconductance correction in zinc-blende semiconductor nanowires with spin-orbit coupling
Physical review / B 96(23), 235302 (2017) [10.1103/PhysRevB.96.235302]
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Journal Article
Stability of charged density waves in InAs nanowires in an external magnetic field
Journal of physics / Condensed matter 29(47), 475601 - (2017) [10.1088/1361-648X/aa8d48]
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Journal Article
Engineering of optical and electronic band gaps in transition metal dichalcogenide monolayers through external dielectric screening
Physical review materials 1(5), 054001 (2017) [10.1103/PhysRevMaterials.1.054001]
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Journal Article
Ferroelectricity in Lu doped HfO2 layers
Applied physics letters 111(14), 142904 - (2017) [10.1063/1.4998336]
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Journal Article
Chalcogenide-based van der Waals epitaxy: Interface conductivity of tellurium on Si(111)
Physical review / B 96(3), 035301 (2017) [10.1103/PhysRevB.96.035301]
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Journal Article
Photon guiding characteristics of waveguide membranes coupled to a microdisk of ZnSe/(Zn,Mg)Se quantum well structures
Semiconductor science and technology 32(7), 075015 (2017) [10.1088/1361-6641/aa69f5]
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Journal Article
Oxidation-induced electron barrier enhancement at interfaces of Ge-based semiconductors (Ge, Ge$_{1−x}$ Sn$_{x}$ , Si$_{y}$ Ge$_{1−x-y}$ Sn$_{x}$ ) with Al$_{2}$ O$_{3}$
Microelectronic engineering 178, 141 - 144 (2017) [10.1016/j.mee.2017.05.011]
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Journal Article
Strain Compensation in Single ZnSe/CdSe Quantum Wells: Analytical Model and Experimental Evidence
ACS applied materials & interfaces 9(9), 8371 - 8377 (2017) [10.1021/acsami.6b15824]
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Journal Article
Schottky barrier tuning via dopant segregation in NiGeSn-GeSn contacts
Journal of applied physics 121(20), 205705 - (2017) [10.1063/1.4984117]
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Journal Article
The asymmetric band structure and electrical behavior of the GdScO 3 /GaN system
Journal of applied physics 121(20), 205303 - (2017) [10.1063/1.4983559]
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Journal Article
Ion-beam modification of 2-D materials - single implant atom analysis via annular dark-field electron microscopy
Ultramicroscopy 176, 31 - 36 (2017) [10.1016/j.ultramic.2016.12.011]
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Journal Article
Bi$_1$Te$_1$ is a dual topological insulator
Nature Communications 8, 14976 (2017) [10.1038/ncomms14976]
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Journal Article
Electric Current and Noise in Long GaN Nanowires in the Space-Charge Limited Transport Regime
Fluctuation and noise letters 16(01), 1750010 -1-12 (2017) [10.1142/S0219477517500109]
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Electronic edge-state and space-charge phenomena in long GaN nanowires and nanoribbonsPGI
Nanotechnology 28(13), 135204 (11pp) (2017) [10.1088/1361-6528/aa5de3]
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Journal Article
Correlation of Bandgap Reduction with Inversion Response in (Si)GeSn/High-k/Metal Stacks
ACS applied materials & interfaces 9(10), 9102 - 9109 (2017) [10.1021/acsami.6b15279]
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Journal Article
Efficient heat dissipation in AlGaN/GaN heterostructure grown on silver substrate
Applied materials today 7, 134 - 137 (2017) [10.1016/j.apmt.2017.02.008]
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Journal Article
Reinventing solid state electronics: Harnessing quantum confinement in bismuth thin films
Applied physics letters 110(9), 093111 - (2017) [10.1063/1.4977431]
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Journal Article
Magnetoresistance oscillations in MBE-grown Sb2Te3 thin films
Applied physics letters 110(9), 092104 - (2017) [10.1063/1.4977848]
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Journal Article
Short-wave infrared LEDs from GeSn/SiGeSn multiple quantum wells
Optica 4(2), 185-188 (2017) [10.1364/OPTICA.4.000185]
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Journal Article
SiGeSn Ternaries for Efficient Group IV Heterostructure Light Emitters
Small 13(16), 1603321 (2017) [10.1002/smll.201603321]
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Journal Article
Quantitative agreement between electron-optical phase images of WSe2 and simulations based on electrostatic potentials that include bonding effects
Physical review letters 118(8), 086101 (2017) [10.1103/PhysRevLett.118.086101]
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Journal Article
Signatures of interaction-induced helical gaps in nanowire quantum point contacts
Nature physics 13, 563–567 (2017) [10.1038/nphys4070]
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Journal Article
Electron Interference in Hall Effect Measurements on GaAs/InAs Core/Shell Nanowires
Nano letters 17(1), 128 - 135 (2017) [10.1021/acs.nanolett.6b03611]
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Journal Article
Process modules for GeSn nanoelectronics with high Sn-contents
Solid state electronics 128, 54 - 59 (2017) [10.1016/j.sse.2016.10.024]
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Journal Article
Broadband infrared absorption enhancement by electroless-deposited silver nanoparticles
Nanophotonics 6(1), 289–297 (2017) [10.1515/nanoph-2016-0114]
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