2018
Journal Article
Quantum transport through MoS 2 constrictions defined by photodoping
Journal of physics / Condensed matter Condensed matter 30(20), 205001 - (2018) [10.1088/1361-648X/aabbb8]
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Journal Article
Impact of Many-Body Effects on Landau Levels in Graphene
Physical review letters 120(18), 187701 (2018) [10.1103/PhysRevLett.120.187701]
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Fabrication of comb-drive actuators for straining nanostructured suspended graphene
Nanotechnology 29(37), 375301 - (2018) [10.1088/1361-6528/aacdec]
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Journal Article
Gate-Defined Electron–Hole Double Dots in Bilayer Graphene
Nano letters 18(8), 4785 - 4790 (2018) [10.1021/acs.nanolett.8b01303]
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Detecting Ultrasound Vibrations with Graphene Resonators
Nano letters 18(8), 5132 - 5137 (2018) [10.1021/acs.nanolett.8b02036]
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Proximity-induced spin-orbit coupling in graphene/ Bi 1.5 Sb 0.5 Te 1.7 Se 1.3 heterostructures
Physical review / B 98(24), 241402 (2018) [10.1103/PhysRevB.98.241402]
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Journal Article
Phase-coherent transport in selectively grown topological insulator nanodots
Nanotechnology 30(5), 055201 - (2018) [10.1088/1361-6528/aaee5f]
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Quantum interferometer based on GaAs/InAs core/shell nanowires connected to superconducting contacts
Semiconductor science and technology 33(6), 064001 - (2018) [10.1088/1361-6641/aabc6d]
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Journal Article
Subthreshold Behavior of Floating-Gate MOSFETs With Ferroelectric Capacitors531
IEEE transactions on electron devices 65(10), 4641 - 4645 (2018) [10.1109/TED.2018.2863727]
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Journal Article
Optoelectronic properties of high-Si-content-Ge 1 −x – y Si x Sn y /Ge 1− x Sn x /Ge 1− x–y Si x Sn y double heterostructure
Semiconductor science and technology 33(12), 124018 - (2018) [10.1088/1361-6641/aaebb5]
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Journal Article
GeSn/SiGeSn Heterostructure and Multi Quantum Well Lasers
ACS photonics 5(11), 4628 - 4636 (2018) [10.1021/acsphotonics.8b01116]
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Journal Article
Characteristics of Recessed-Gate TFETs With Line Tunneling
IEEE transactions on electron devices 65(2), 769 - 775 (2018) [10.1109/TED.2017.2786215]
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Effect of hysteretic and non-hysteretic negative capacitance on tunnel FETs DC performance
Nanotechnology 29(9), 095202 - (2018) [10.1088/1361-6528/aaa590]
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Journal Article
Silicon tunnel FET with average subthreshold slope of 55 mV/dec at low drain currents
Solid state electronics 143, 62 - 68 (2018) [10.1016/j.sse.2018.01.007]
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Strained Silicon Single Nanowire Gate-All-Around TFETs with Optimized Tunneling Junctions
Applied Sciences 8(5), 670 - (2018) [10.3390/app8050670]
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Investigation of carrier confinement in direct bandgap GeSn/SiGeSn 2D and 0D heterostructures
Scientific reports 8(1), 15557 (2018) [10.1038/s41598-018-33820-1]
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Epitaxial GeSn: impact of process conditions on material quality
Semiconductor science and technology 33(11), 114010 (2018) [10.1088/1361-6641/aae2f9]
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Journal Article
Structural properties and anisotropic electronic transport in SrIrO3 films
Physical review / B 98(11), 115113 (2018) [10.1103/PhysRevB.98.115113]
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Structural, magnetic, and transport properties of Fe 1− x Rh x /MgO(001) films grown by molecular-beam epitaxy
Applied physics letters 113(8), 082403 - (2018) [10.1063/1.5048303]
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In situ disentangling surface state transport channels of a topological insulator thin film by gating
npj quantum materials 3(1), 46 (2018) [10.1038/s41535-018-0116-1]
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The thermal stability of epitaxial GeSn layers
APL materials 6(7), 076108 (2018) [10.1063/1.5036728]
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Journal Article
A Novel Gate-Normal Tunneling Field-Effect Transistor With Dual-Metal Gate
IEEE journal of the Electron Devices Society 6, 1070 - 1076 (2018) [10.1109/JEDS.2018.2864581]
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Magnetotransport signatures of three-dimensional topological insulator nanostructures
Physical review / B 97(24), 245429 (2018) [10.1103/PhysRevB.97.245429]
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Journal Article
Extreme IR absorption in group IV-SiGeSn core-shell nanowires
Journal of applied physics 123(22), 223102 - (2018) [10.1063/1.5021393]
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Tailoring Mechanically Tunable Strain Fields in Graphene
Nano letters 18(3), 1707 - 1713 (2018) [10.1021/acs.nanolett.7b04774]
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Journal Article
SiGe based line tunneling field-effect transistors
Nanoelectronic Devices 18(1), 1 (2018) [10.21494/ISTE.OP.2018.0223]
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Journal Article
Advanced GeSn/SiGeSn Group IV Heterostructure Lasers
Advanced science 5(6), 1700955 (2018) [10.1002/advs.201700955]
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Influence of texture and grain misorientation on the ionic conduction in multilayered solid electrolytes – interface strain effects in competition with blocking grain boundaries
Physical chemistry, chemical physics 20(14), 9269 - 9280 (2018) [10.1039/C7CP06951K]
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Journal Article
Strained Silicon Complementary TFET SRAM: Experimental Demonstration and Simulations
IEEE journal of the Electron Devices Society 6, 1033 - 1040 (2018) [10.1109/JEDS.2018.2825639]
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Journal Article
Infrared/terahertz spectra of the photogalvanic effect in (Bi,Sb)Te based three-dimensional topological insulators
Physical review materials 2(2), 024202 (2018) [10.1103/PhysRevMaterials.2.024202]
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