2021
Journal Article
Triggering phase-coherent spin packets by pulsed electrical spin injection across an Fe/GaAs Schottky barrier
Physical review / B 104(19), 195202 (2021) [10.1103/PhysRevB.104.195202]
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A Consistent Model for Short-Term Instability and Long-Term Retention in Filamentary Oxide-Based Memristive Devices
ACS applied materials & interfaces 13(48), 58066 - 58075 (2021) [10.1021/acsami.1c14667]
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Quantum Spin-Valley Hall Kink States: From Concept to Materials Design
Physical review letters 127(11), 116402 (2021) [10.1103/PhysRevLett.127.116402]
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Extended spin coherence of the zinc-vacancy centers in ZnSe with fast optical access
Communications materials 2(1), 91 (2021) [10.1038/s43246-021-00198-z]
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Electrical Control over Phonon Polarization in Strained Graphene
Nano letters 21(7), 2898 - 2904 (2021) [10.1021/acs.nanolett.0c05043]
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Tunable interdot coupling in few-electron bilayer graphene double quantum dots
Applied physics letters 118(10), 103101 - (2021) [10.1063/5.0035300]
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Dispersive sensing of charge states in a bilayer graphene quantum dot
Applied physics letters 118(9), 093104 - (2021) [10.1063/5.0040234]
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Free‐Standing ZnSe‐Based Microdisk Resonators: Influence of Edge Roughness on the Optical Quality and Reducing Degradation with Supported Geometry
Physica status solidi / B 258(11), 2100249 - (2021) [10.1002/pssb.202100249]
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Quantum Boltzmann equation for non-reversible transient transport in Rashba-Landau coupled low-dimensional GeTe systems
Physics letters / A 411, 127550 - (2021) [10.1016/j.physleta.2021.127550]
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Tunable coupling of two mechanical resonators by a graphene membrane
2D Materials 8(3), 035039 - (2021) [10.1088/2053-1583/ac005e]
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Thermoelectric Efficiency of Epitaxial GeSn Alloys for Integrated Si-Based Applications: Assessing the Lattice Thermal Conductivity by Raman Thermometry
ACS applied energy materials 4(7), 7385 - 7392 (2021) [10.1021/acsaem.1c01576]
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CMOS-Compatible Bias-Tunable Dual-Band Detector Based on GeSn/Ge/Si Coupled Photodiodes
ACS photonics 8(7), 2166 - 2173 (2021) [10.1021/acsphotonics.1c00617]
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Monolithic infrared silicon photonics: The rise of (Si)GeSn semiconductors
Applied physics letters 118(11), 110502 - (2021) [10.1063/5.0043511]
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In-plane magnetic field-driven symmetry breaking in topological insulator-based three-terminal junctions
Communications materials 2(1), 116 (2021) [10.1038/s43246-021-00213-3]
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Formation of controllable pH gradients inside microchannels by using light-addressable electrodes
Sensors and actuators <Lausanne> / B 346, 130422 - (2021) [10.1016/j.snb.2021.130422]
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Engineering new limits to magnetostriction through metastability in iron-gallium alloys
Nature Communications 12(1), 2757 (2021) [10.1038/s41467-021-22793-x]
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Epitaxial stannate pyrochlore thin films: Limitations of cation stoichiometry and electron doping
APL materials 9(5), 051113 - (2021) [10.1063/5.0049334]
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a -axis YBa 2 Cu 3 O 7− x /PrBa 2 Cu 3 O 7− x /YBa 2 Cu 3 O 7− x trilayers with subnanometer rms roughness
APL materials 9(2), 021117 - (2021) [10.1063/5.0034648]
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AlGaN/GaN MISHEMTs with epitaxially grown GdScO 3 as high- κ dielectric
Applied physics letters 118(5), 052902 - (2021) [10.1063/5.0037692]
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Front Cover: Lifting the Spin‐Momentum Locking in Ultra‐Thin Topological Insulator Films (Adv. Quantum Technol. 11/2021)
Advanced quantum technologies 4(11), 2170111 - (2021) [10.1002/qute.202170111]
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Fabry–Pérot interferometry with gate-tunable 3D topological insulator nanowires
Nanotechnology 32(43), 435002 - (2021) [10.1088/1361-6528/ac1633]
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Unexpected precipitates in conjunction with layer-by-layer growth in Mn-enriched La2/3Sr1/3MnO3 thin films
Thin solid films 735, 138862 - (2021) [10.1016/j.tsf.2021.138862]
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Artificial Synapses Based on Ferroelectric Schottky Barrier Field-Effect Transistors for Neuromorphic Applications
ACS applied materials & interfaces 13(27), 32005-32012 (2021) [10.1021/acsami.1c07505]
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Ab initio screening of metallic MAX ceramics for advanced interconnect applications
Physical review materials 5(5), 056002 (2021) [10.1103/PhysRevMaterials.5.056002]
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Reappearance of first Shapiro step in narrow topological Josephson junctions
Science advances 7(26), eabf1854 - (2021) [10.1126/sciadv.abf1854]
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A New High-Throughput Focused MeV Ion-Beam Analysis Setup
Instruments 5(1), 10 - (2021) [10.3390/instruments5010010]
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Molecular‐Beam Epitaxy of 3D Topological Insulator Thin Films and Devices on Si Substrates
Physica status solidi / B 258(1), 2000007 (2021) [10.1002/pssb.202000007]
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