2023
2023 Veröffentlichungen.
Master Thesis
Growth optimization of the topological insulator Sb2Te3 employing thermal cracker cells
103p. (2023) = Masterarbeit, Universität Siegen, 2023
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Journal Article
Particle–hole symmetry protects spin-valley blockade in graphene quantum dots
Nature 618(7963), 51 - 56 (2023) [10.1038/s41586-023-05953-5]
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Poster (After Call)
Flux-periodic oscillations in the transport properties of core/shell GaAs/InAs nanowires equipped with normal and superconducting contacts
Electronic Properties of 2-Dimensional Systems, EP2DS-MSS, GrenobleGrenoble, France, 10 Jul 2023 - 14 Jul 2023
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Conference Presentation (Invited)
Flux-periodic transport in GaAs/InAs core/shell nanowirebased devices
Germany-Japan Workshop on Recent Developments in Quantum Materials and Nanoscale Devices, WakoWako, Japan, 27 Nov 2023 - 28 Nov 2023
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Poster (After Call)
Aharonov-Bohm-type oscillations in phase-pure core/shell GaAs/InAsnanowires
Bound States, BudapestBudapest, Hungary, 12 Jun 2023 - 15 Jun 2023
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Conference Presentation (After Call)
Aharonov–Bohm–type oscillations in phase–pure core/shell GaAs/InAs nanowires
DPG Frühjahrstagung, DresdenDresden, Germany, 27 Mar 2023 - 31 Mar 2023
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Journal Article
Aharonov-Bohm Interference and Phase-Coherent Surface-State Transport in Topological Insulator Rings
Nano letters 23(14), 6347 - 6353 (2023) [10.1021/acs.nanolett.3c00905]
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Poster (After Call)
In-plane magnetic field induced asymmetric magnetoconductance in topologicalinsulator kinks
Electronic Properties of 2-dimensional Systems, EP2DS MSS, GrenobleGrenoble, France, 10 Jul 2023 - 13 Jul 2023
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Journal Article
High‐Performance of Liquid‐Gated Silicon Nanowire FETs Covered with Ultrathin Layers of Diamond‐Like Tetrahedral Amorphous Carbon
Physica status solidi / A 220(12), 202300024 (2023) [10.1002/pssa.202300024]
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Master Thesis
Optimization of Magnetic Topological Insulators by Magneto-Transport Measurements
57p. (2023) = Masterarbeit, RWTH Aachen, 2023
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Journal Article
Optical Properties of MoSe 2 Monolayer Implanted with Ultra-Low-Energy Cr Ions
ACS applied materials & interfaces 15(29), 35321 - 35331 (2023) [10.1021/acsami.3c05366]
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Journal Article
Putting High-Index Cu on the Map for High-Yield, Dry-Transferred CVD Graphene
ACS nano 17(2), 1229 - 1238 (2023) [10.1021/acsnano.2c09253]
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Journal Article
The versatile family of molybdenum oxides: synthesis, properties, and recent applications
Journal of physics / Condensed matter 35(14), 143002 - (2023) [10.1088/1361-648X/acb24a]
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Journal Article
Isothermal Heteroepitaxy of Ge 1– x Sn x Structures for Electronic and Photonic Applications
ACS applied electronic materials 5(4), 2268–2275 (2023) [10.1021/acsaelm.3c00112]
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Journal Article
Local Alloy Order in a Ge 1 − x Sn x / Ge Epitaxial Layer
Physical review applied 20(2), 024021 (2023) [10.1103/PhysRevApplied.20.024021]
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Journal Article
Semiconductor Membranes for Electrostatic Exciton Trapping in Optically Addressable Quantum Transport Devices
Physical review applied 19(4), 044095 (2023) [10.1103/PhysRevApplied.19.044095]
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Journal Article
Conductance asymmetry in proximitized magnetic topological insulator junctions with Majorana modes
Physical review / B 108(3), 035424 (2023) [10.1103/PhysRevB.108.035424]
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Conference Presentation (Invited)
GeSnOI technology enabling room temperature lasing with GeSn alloys
Silicon Photonics XVIII, San FranciscoSan Francisco, United States, 28 Jan 2023 - 3 Feb 2023
[10.1117/12.2646181]
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Journal Article
Advances in In Situ Boron and Phosphorous Doping of SiGeSn
ECS journal of solid state science and technology 12(6), 064001 - (2023) [10.1149/2162-8777/acd720]
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Journal Article
Nanosecond laser annealing of pseudomorphic GeSn layers: Impact of Sn content
Materials science in semiconductor processing 163, 107549 - (2023) [10.1016/j.mssp.2023.107549]
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Journal Article
Effect of surface gallium termination on the formation and emission energy of an InGaAs wetting layer during the growth of InGaAs quantum dots by droplet epitaxy
Nanotechnology 34(14), 145601 - (2023) [10.1088/1361-6528/acabd1]
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Abstract
Synapses with homo/hetero-synaptic plasticity enabled by ferroelectric polarization modulated Schottky diodes
International conference on neuromorphic, natural and physical computing, NNPC, HannoverHannover, Germany, 25 Oct 2023 - 27 Oct 2023
[10.34734/FZJ-2024-01219]
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Poster (Other)
Synapses with Homo/Hetero-Synaptic Plasticity Enabled by Ferroelectric Polarization Modulated Schottky Diodes
International conference on neuromorphic, natural and physical computing, NNPC, HannoverHannover, Germany, 25 Oct 2023 - 27 Oct 2023
[10.34734/FZJ-2024-01220]
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Journal Article
Impact of synthesis temperature and precursor ratio on the crystal quality of MOCVD WSe 2 monolayers
Nanotechnology 34, 20 (2023) [10.1088/1361-6528/acb947]
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Journal Article
Si–Ge–Sn alloys grown by chemical vapour deposition: a versatile material for photonics, electronics, and thermoelectrics
Applied physics / A 129(3), 235 (2023) [10.1007/s00339-023-06478-4]
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Poster (After Call)
Au/YBa2Cu3O7-x heterostructures for microwave applications
High temperature superconductors in high frequency fields, HTSHFF2023, Giardini NaxosGiardini Naxos, Italy, 10 Sep 2023 - 13 Sep 2023
[10.34734/FZJ-2024-01277]
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Preprint
Induced Superconductivity in Hybrid Au/YBa2Cu3O7-x Electrodes on Vicinal Substrates
[10.34734/FZJ-2024-01313]
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Conference Presentation (Invited)
Toward Steep Slope Cryogenic Transistors for Quantum Computing
13th International WorkShop on New Group IV Semiconductor Nanoelectronics, SendaiSendai, Japan, 23 Jan 2023 - 24 Jan 2023
[10.34734/FZJ-2024-00966]
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Conference Presentation (After Call)
High Performance 5 nm Si Nanowire FETs with a Record Small SS = 2.3 mV/dec and High Transconductance at 5.5 K Enabled by Dopant Segregated Silicide Source/Drain
2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), KyotoKyoto, Japan, 11 Jun 2023 - 16 Jun 2023
[10.23919/VLSITechnologyandCir57934.2023.10185373]
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Journal Article
Improved performance of FDSOI FETs at cryogenic temperatures by optimizing ion implantation into silicide
Solid state electronics 208, 108733 - (2023) [10.1016/j.sse.2023.108733]
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Contribution to a conference proceedings
Improved performance of FDSOI FETs at cryogenic temperatures by optimizing ion implantation into silicide
EUROSOI-ULIS, TarragonaTarragona, Spain, 10 Mar 2023 - 12 Mar 2023
5.1 (2023)
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Journal Article
Coherent charge oscillations in a bilayer graphene double quantum dot
Nature Communications 14(1), 7911 (2023) [10.1038/s41467-023-43541-3]
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Journal Article
Robust and Fragile Majorana Bound States in Proximitized Topological Insulator Nanoribbons
Nanomaterials 13(4), 723 - (2023) [10.3390/nano13040723]
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Journal Article
Selective Area Epitaxy of Quasi-1-Dimensional Topological Nanostructures and Networks
Nanomaterials 13(2), 354 - (2023) [10.3390/nano13020354]
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Journal Article
Phase-Selective Epitaxy of Trigonal and Orthorhombic Bismuth Thin Films on Si (111)
Nanomaterials 13(14), 2143 - (2023) [10.3390/nano13142143]
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Dissertation / PhD Thesis
Development and Characterization of self-catalyzed Core/Multi-Shell Nanowires towards Quantum Light Sources
142 p. (2023) = Dissertation, RWTH Aachen, 2023
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Preprint
Single in situ Interface Characterization Composed of Niobium and a Selectively Grown (Bi$_{1-x}$Sb$_x$)$_2$Te$_3$ Topological Insulator Nanoribbon
arXiv (2023) [10.48550/ARXIV.2312.07325]
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Contribution to a conference proceedings
Vertical gate-all-around SiGeSn/GeSn/SiGeSn nanowire nFETs
Intern. Conf. Solid State Devices and Materials, SSDM, NagoyaNagoya, Japan, 5 Sep 2023 - 8 Sep 2023
PS 1-13 (2023)
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Conference Presentation (Panel discussion)
Vertical GeSn/SiGeSn GAA Nanowire n-FETs with High Electron Mobility
2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT), VLSI-TSA, HsinchuHsinchu, Taiwan, 17 Apr 2023 - 20 Apr 2023
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Contribution to a conference proceedings
Vertical GeSn/SiGeSn GAA Nanowire n-FETs with High Electron Mobility
2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT), HsinchuHsinchu, Taiwan, 17 Apr 2023 - 20 Apr 2023
IEEE 1-2 (2023) [10.1109/VLSI-TSA/VLSI-DAT57221.2023.10134252]
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Master Thesis
Magnetic investigation of group-IV alloys using magnetotransport measurements
81p. (2023) = Masterarbeit, RWTH Aachen, 2023
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Contribution to a conference proceedings
On the Performance of Low Power Cryogenic Electronics for Scalable Quantum Information Processors *
2023 IEEE Nanotechnology Materials and Devices Conference (NMDC), PaestumPaestum, Italy, 22 Oct 2023 - 25 Oct 2023
IEEE 440-445 (2023) [10.1109/NMDC57951.2023.10343713]
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Journal Article
Toward Low‐Power Cryogenic Metal‐Oxide Semiconductor Field‐Effect Transistors
Physica status solidi / A 220(13), 2300069 (2023) [10.1002/pssa.202300069]
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Journal Article
Supercurrent in Bi4Te3 Topological Material-Based Three-Terminal Junctions
Nanomaterials 13(2), 293 - (2023) [10.3390/nano13020293]
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Master Thesis
„Investigation of Si-based GeSn/SiGeSn Semiconductors for Thermoelectric Applications“
67p. (2023) = Masterarbeit, RWTH Aachen, 2023
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Conference Presentation (After Call)
Shadow-wall epitaxy for all-in-situ fabrication of compound-semiconductor-based nanodevices
10th NRW Nano Conference, DortmundDortmund, Germany, 23 May 2023 - 24 May 2023
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Conference Presentation (After Call)
Realization of fully independent complete field-effect devices grown all-in-situ with the innovative Shadow Wall Epitaxy technique
Micro and Nano Engineering Conference 2023, BerlinBerlin, Germany, 25 Sep 2023 - 28 Sep 2023
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Journal Article
Vertical GeSn nanowire MOSFETs for CMOS beyond silicon
Communications engineering 2(1), 7 (2023) [10.1038/s44172-023-00059-2]
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Contribution to a conference proceedings
Electrically pumped GeSn/SiGeSn micro-rings lasers on Si with minimum threshold current of 40 mA
2023 IEEE Silicon Photonics Conference (SiPhotonics), WashingtonWashington, DC, 4 Apr 2023 - 7 Apr 2023
IEEE - (2023) [10.1109/SiPhotonics55903.2023.10141949]
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Journal Article
Characterisation of engineered defects in extreme ultraviolet mirror substrates using lab-scale extreme ultraviolet reflection ptychography
Ultramicroscopy 249, 113720 - (2023) [10.1016/j.ultramic.2023.113720]
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Journal Article
Large‐Area Synthesis of Ferromagnetic Fe 5− x GeTe 2 /Graphene van der Waals Heterostructures with Curie Temperature above Room Temperature
Small 19(39), 2302387 (2023) [10.1002/smll.202302387]
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Conference Presentation (After Call)
Towards high-Tc superconducting qubit with THz plasma frequency
15th International Workshop on High Temperature Superconductors in High Frequency Fields, HTSHFF2023, Giardini NaxosGiardini Naxos, Italy, 10 Sep 2023 - 13 Sep 2023
[10.34734/FZJ-2024-01278]
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Preprint
Quantum size effects in ultra-thin YBa2Cu3O7-x films
[10.34734/FZJ-2024-01337]
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Journal Article
Combining x-ray real and reciprocal space mapping techniques to explore the epitaxial growth of semiconductors
Journal of physics / D 56(24), 245102 - (2023) [10.1088/1361-6463/acc597]
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Journal Article
In situ TEM heating experiments on thin epitaxial GeSn layers: Modes of phase separation
APL materials 11(10), 101117 (2023) [10.1063/5.0167407]
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Journal Article
Impact of competing energy scales on the shell-filling sequence in elliptic bilayer graphene quantum dots
Physical review / B 108(12), 125128 (2023) [10.1103/PhysRevB.108.125128]
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Journal Article
Enhancement of the Surface Morphology of (Bi0.4Sb0.6)2Te3 Thin Films by In Situ Thermal Annealing
Nanomaterials 13(4), 763 - (2023) [10.3390/nano13040763]
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Journal Article
Chemically detaching hBN crystals grown at atmospheric pressure and high temperature for high-performance graphene devices
Nanotechnology 34(47), 475703 - (2023) [10.1088/1361-6528/acf2a0]
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Journal Article
Photoemission study of twisted monolayers and bilayers of WSe 2 on graphite substrates
Physical review materials 7(4), 044004 (2023) [10.1103/PhysRevMaterials.7.044004]
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Master Thesis
Transport Measurements of Multi-terminal Josephson Junctions
84p. (2023) = Masterarbeit, RWTH Aachen, 2023
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Talk (non-conference) (Invited)
Quantum Transport and Spectroscopy on In-situ Prepared Semiconductor Nanowire Superconductor Junctions
Seminar, Tohoku UniversitySendai, Tohoku University, Japan, 10 Feb 2023
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Conference Presentation (Invited)
Andreev Bound States and Flux-Periodic Supercurrent in In-situ Prepared Semiconductor Nanowire Superconductor Junctions
EU Japan Workshop on Spintronics and Quantum Transformation, FZ JülichJülich, FZ Jülich, Germany, 7 Aug 2023 - 10 Aug 2023
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Talk (non-conference) (Invited)
Phase-Coherent Transport in Multi-Terminal Topological Insulator-Based Nanostructures
Institute Seminar (online), University of Southern CaliforniaLos Angeles, University of Southern California, USA, 22 Sep 2023 - 22 Sep 2023
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Conference Presentation (Invited)
Transport in topological insulator nanoribbon-based hybrid structures
Germany-Japan Workshop on Recent Developments in Quantum Materials and Nanoscale Devices, RIKENWako, RIKEN, Japan, 27 Nov 2023 - 28 Nov 2023
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Journal Article
Tuning the supercurrent distribution in parallel ballistic graphene Josephson junctions
Physical review applied 20(5), 054049 (2023) [10.1103/PhysRevApplied.20.054049]
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Journal Article
Anomalous temperature dependence of multiple Andreev reflections in a topological insulator Josephson junction
Superconductor science and technology 36(2), 024002 - (2023) [10.1088/1361-6668/aca4fe]
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Journal Article
Charge carrier density dependent Raman spectra of graphene encapsulated in hexagonal boron nitride
Physical review / B 107(7), 075420 (2023) [10.1103/PhysRevB.107.075420]
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Conference Presentation (Other)
Low contact resistance of NiGeSn on n-GeSn
EUROSOI-ULIS 2023, TarragonaTarragona, Spain, 10 May 2023 - 12 May 2023
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Journal Article
Tailoring the dielectric screening in WS2–graphene heterostructures
npj 2D materials and applications 7(1), 29 (2023) [10.1038/s41699-023-00394-0]
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Poster (After Call)
Towards the Quantum-Anomalous-Hall-Effect in MagneticTopological Insulator Structures
DPG Frühjahrstagung, DresdenDresden, Germany, 27 Mar 2023 - 31 Mar 2023
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Journal Article
Phonon-mediated room-temperature quantum Hall transport in graphene
Nature Communications 14(1), 318 (2023) [10.1038/s41467-023-35986-3]
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Journal Article
Probing Enhanced Electron-Phonon Coupling in Graphene by Infrared Resonance Raman Spectroscopy
Physical review letters 130(25), 256901 (2023) [10.1103/PhysRevLett.130.256901]
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Master Thesis
Design, Fabrication and Measurement of an Aluminium 12-Qubit device resistant to magnetic fields
99p. (2023) = Masterarbeit, RWTH Aachen, 2023
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Journal Article
Twist angle dependent interlayer transfer of valley polarization from excitons to free charge carriers in WSe2/MoSe2 heterobilayers
npj 2D materials and applications 7(1), 58 (2023) [10.1038/s41699-023-00420-1]
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Preprint
Atomic diffusion-induced polarization and superconductivity in topological insulator-based heterostructures
arXiv (2023) [10.48550/ARXIV.2311.16590]
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Journal Article
Heterosynaptic Plasticity and Neuromorphic Boolean Logic Enabled by Ferroelectric Polarization Modulated Schottky Diodes
Advanced electronic materials 9(3), 2201155 - (2023) [10.1002/aelm.202201155]
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Dissertation / PhD Thesis
Ferroelectric Schottky Barrier Devices on SOI for Neuromorphic Computing
152 p. (2023) = Dissertation, RWTH Aachen, 2023
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Conference Presentation (Invited)
Exploring Low Power Devices with New Materials and Steep Slope Transistors
International conference on Solid-State Devices and Materials, SSDM, NagoyaNagoya, Japan, 5 Sep 2023 - 8 Sep 2023
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Conference Presentation (Invited)
Gate all around nanowire FETs: Operation from RT to Cryogenic temperatures
International Cooperation On Semiconductors Workshop, ICOS, GrenobleGrenoble, France, 26 Apr 2023 - 28 Apr 2023
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Conference Presentation (Invited)
Ferroelectric Schottky barrier transistor for neuromorphic computing
The 7th Symposium on Schottky Barrier MOS (SB-MOS) devices, ParisParis, France, 28 Sep 2023 - 29 Sep 2023
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Talk (non-conference) (Invited)
CMOS devices for quantum and neuromorphic computing
Seminar, Tokyo TechTokyo Tech, Japan, 24 Nov 2023
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Journal Article
Universal conductance fluctuations in a Bi 1.5 Sb 0.5 Te 1.8 Se 1.2 topological insulator nano-scaled Hall bar structure
Semiconductor science and technology 38(3), 035010 - (2023) [10.1088/1361-6641/acb45f]
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