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Low temperature near-field fingerprint spectroscopy of 2D electron systems in oxide heterostructures and beyond
Nature Communications 16(1), 4417 (2025) [10.1038/s41467-025-59633-1]
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3D kinetic Monte Carlo-based investigation of the influence of dopants on the reliability of VCM ReRAM
Journal of applied physics 137(17), 175105 (2025) [10.1063/5.0262843]
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Automated Endurance Characterization of Phase Change Memory
IEEE access 13, 71214 - 71222 (2025) [10.1109/ACCESS.2025.3562434]
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Revealing the Intrinsic Oxygen Evolution Reaction Activity of Perovskite Oxides across Conductivity Ranges Using Thin Film Model Systems
ACS applied materials & interfaces 17(14), 21110 - 21121 (2025) [10.1021/acsami.4c20141]
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Electrochemical ohmic memristors for continual learning
Nature Communications 16(1), 2348 (2025) [10.1038/s41467-025-57543-w]
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Effect of programming schemes on short-term instability in 1T1R configuration
IEEE access 13, 44555 - 44564 (2025) [10.1109/ACCESS.2025.3547818]
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Dynamic Analysis of the Effect of the Device-to-Device Variability of Real-World Memristors on the Implementation of Uncoupled Memristive Cellular Nonlinear Networks
IEEE transactions on nanotechnology 24, 121-128 (2025) [10.1109/TNANO.2025.3545251]
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Experimental Verification and Evaluation of Non-Stateful Logic Gates in Resistive RAM
IEEE transactions on circuits and systems / 1 72(5), 2029 - 2038 (2025) [10.1109/TCSI.2024.3486376]
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Memristive Ternary Łukasiewicz Logic based on Reading-based Ratioed Resistive States (3R)
Philosophical transactions of the Royal Society / A 383(2288), (2025) [10.1098/rsta.2023.0397]
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Resistive Switching Acceleration Induced by Thermal Confinement
Advanced electronic materials 11(3), 2400555 (2025) [10.1002/aelm.202400555]
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Recommended strategies for quantifying oxygen vacancies with X-ray photoelectron spectroscopy
Journal of the European Ceramic Society 44(15), 116709 (2024) [10.1016/j.jeurceramsoc.2024.116709]
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Nanoswitches: Resistively Switching Chalcogenides for Future Electronics
Physica status solidi / A 221(22), 2400810 (2024) [10.1002/pssa.202400810]
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Surface Speciation in Microwave-Assisted CO Oxidation over Perovskites─The Role of Water and Activation Pretreatment
ACS applied materials & interfaces 16(49), 67662 - 67673 (2024) [10.1021/acsami.4c13212]
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Random Projection‐Based Locality‐Sensitive Hashing in a Memristor Crossbar Array with Stochasticity for Sparse Self‐Attention‐Based Transformer
Advanced electronic materials 10(10), 2300850 (2024) [10.1002/aelm.202300850]
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Roadmap to neuromorphic computing with emerging technologies
APL materials 12(10), 109201 (2024) [10.1063/5.0179424]
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Ion Migration and Redox Reactions in Axial Heterojunction Perovskite CsPb(Br 1– x Cl x ) 3 Nanowire Devices Revealed by Operando Nanofocused X-ray Photoelectron Spectroscopy
ACS nano 18(51), 34763–34775 (2024) [10.1021/acsnano.4c11458]
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Effect of Transistor Transfer Characteristics on the Programming Process in 1T1R Configuration
IEEE transactions on electron devices 71(4), 2423 - 2430 (2024) [10.1109/TED.2024.3370536]
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Thermal stability and coalescence dynamics of exsolved metal nanoparticles at charged perovskite surfaces
Nature Communications 15(1), 9724 (2024) [10.1038/s41467-024-54008-4]
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It's Getting Hot in Here: Hardware Security Implications of Thermal Crosstalk on ReRAMs
IEEE transactions on reliability 1, 1 - 15 (2024) [10.1109/TR.2024.3371589]
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Assessment of functional performance in self-rectifying passive crossbar arrays utilizing sneak path current
Scientific reports 14(1), 24682 (2024) [10.1038/s41598-024-74667-z]
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A flexible and fast digital twin for RRAM systems applied for training resilient neural networks
Scientific reports 14(1), 23695 (2024) [10.1038/s41598-024-73439-z]
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Understanding Stochastic Behavior of Self- Rectifying Memristors for Error-Corrected Physical Unclonable Functions
IEEE transactions on nanotechnology 23, 490 - 499 (2024) [10.1109/TNANO.2024.3413888]
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Reliability effects of lateral filament confinement by nano-scaling the oxide in memristive devices
Nanoscale horizons 9(5), 764 - 774 (2024) [10.1039/D3NH00520H]
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Variability-aware modeling of electrochemical metallization memory cells
Neuromorphic computing and engineering 4(3), 034007 - (2024) [10.1088/2634-4386/ad57e7]
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Evaluation Methods for ReRAM Potentiation on Sub-Nanosecond Timescales
IEEE transactions on electron devices 71(11), 6691 - 6697 (2024) [10.1109/TED.2024.3461676]
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Influence of active electrode impurity on memristive characteristics of ECM devices
Journal of solid state electrochemistry 28(5), 1735 - 1741 (2024) [10.1007/s10008-024-05821-w]
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Synaptogen: A Cross-Domain Generative Device Model for Large-Scale Neuromorphic Circuit Design
IEEE transactions on electron devices 71(9), 5345 - 5353 (2024) [10.1109/TED.2024.3427616]
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Optimization of self-rectifying analog memristors by insertion of an interfacial layer
Applied physics letters 125(8), 083509 (2024) [10.1063/5.0213396]
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Large area pulsed laser deposition of memristive Pr0.7Ca0.3MnO3 heterostructures for neuromorphic computing
Thin solid films 805, 140499 - (2024) [10.1016/j.tsf.2024.140499]
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Resolving the Relaxation of Volatile Valence Change Memory
Advanced electronic materials 10(12), 2400062 (2024) [10.1002/aelm.202400062]
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Theoretico-experimental analysis of bistability in the oscillatory response of a TaOx ReRAM to pulse train stimuli
Frontiers in nanotechnology 6, 1301320 (2024) [10.3389/fnano.2024.1301320]
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Tailoring high-performance catalyst architectures via ‘accessional ionomer coatings’ for anion exchange membrane water electrolysis
International journal of hydrogen energy 49, 591 - 603 (2024) [10.1016/j.ijhydene.2023.08.281]
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Interfacial Thermal Resistive Switching in (Pt,Cr)/SrTiO 3 Devices
ACS applied materials & interfaces 16(12), 15043 - 15049 (2024) [10.1021/acsami.3c19285]
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Analytical modelling of the transport in analog filamentary conductive-metal-oxide/HfO x ReRAM devices
Nanoscale horizons 9(5), 775-784 (2024) [10.1039/D4NH00072B]
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Electrochemical rewiring through quantum conductance effects in single metallic memristive nanowires
Nanoscale horizons 9(3), 416 - 426 (2024) [10.1039/D3NH00476G]
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Oxygen Diffusion in Brownmillerite Sr 2 Fe 2 O 5 is Two-Dimensional: Results from a Molecular Dynamics Study
Chemistry of materials 36(4), 2039 - 2048 (2024) [10.1021/acs.chemmater.3c03032]
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The effect of intrinsic magnetic order on electrochemical water splitting
Applied physics reviews 11(1), 011420 (2024) [10.1063/5.0174662]
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Heterogeneous Integration of Graphene and HfO 2 Memristors
Advanced functional materials 34(19), 2309558 (2024) [10.1002/adfm.202309558]
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La 0.6 Sr 0.4 CoO 3−δ Films Under Deoxygenation: Magnetic And Electronic Transitions Are Apart from The Structural Phase Transition
Advanced functional materials 34(24), 2313208 (2024) [10.1002/adfm.202313208]
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Accurate Evaluation Method for HRS Retention of VCM ReRAM
APL materials 12(3), 031112 (2024) [10.1063/5.0188573]
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Physical Origin of Threshold Switching in Amorphous Chromium‐Doped V 2 O 3
Physica status solidi / A 221(22), 2300405 (2024) [10.1002/pssa.202300405]
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Impact of Non‐Stoichiometric Phases and Grain Boundaries on the Nanoscale Forming and Switching of HfO x Thin Films
Advanced electronic materials 10(4), 2300693 (2024) [10.1002/aelm.202300693]
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Control of Growth Kinetics during Remote Epitaxy of Complex Oxides on Graphene by Pulsed Laser Deposition
APL materials 12(2), 021113 (2024) [10.1063/5.0180001]
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Critical Analysis of Thermodiffusion‐Induced Unipolar Resistive Switching in a Metal‐Oxide‐Metal Memristive Device
Physica status solidi / A 221(22), 2300407 (2024) [10.1002/pssa.202300407]
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Resistive Switching and Current Conduction Mechanisms in Hexagonal Boron Nitride Threshold Memristors with Nickel Electrodes
Advanced functional materials 34(15), 2300428 (2024) [10.1002/adfm.202300428]
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Space charge governs the kinetics of metal exsolution
Nature materials 23, 406-413 (2024) [10.1038/s41563-023-01743-6]
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In Operando Near‐Field Optical Investigation of Memristive Ta 2 O 5 Thin Film Devices with a Graphene Top Electrode
Advanced functional materials 34(16), 2312980 (2024) [10.1002/adfm.202312980]
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Eightwise switching mechanism in memristive SrTiO 3 devices and its implications on the device performance
Physica status solidi / A 221(22), 202300483 (2024) [10.1002/pssa.202300483]
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Dual‐Mode Operation of Epitaxial Hf 0.5 Zr 0.5 O 2 : Ferroelectric and Filamentary‐Type Resistive Switching
Physica status solidi / A 221(22), 202300409 (2024) [10.1002/pssa.202300409]
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Reliability Aspects of 28 nm BEOL-Integrated Resistive Switching Random Access Memory
Physica status solidi / A 221(22), 202300401 (2024) [10.1002/pssa.202300401]
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Deeper mechanistic insights into epitaxial nickelate electrocatalysts for the oxygen evolution reaction
Chemical communications 59(31), 4562 - 4577 (2023) [10.1039/D3CC00325F]
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Impact of Carbon Impurities on Air Stability of MOCVD 2D-MoS2
Surfaces 6(4), 351 - 363 (2023) [10.3390/surfaces6040025]
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Recent Advances and Future Prospects for Memristive Materials, Devices, and Systems
ACS nano 17(13), 11994 - 12039 (2023) [10.1021/acsnano.3c03505]
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Microwave synthesis of molybdenene from MoS2
Nature nanotechnology 18(12), 1430 - 1438 (2023) [10.1038/s41565-023-01484-2]
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Editorial: Focus issue on 2D materials for neuromorphic computing
Neuromorphic computing and engineering 3(1), 010201 - (2023) [10.1088/2634-4386/acba3f]
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Resistive switching and role of interfaces in memristive devices based on amorphous NbO x grown by anodic oxidation
Physical chemistry, chemical physics 25(21), 14766 - 14777 (2023) [10.1039/D3CP01160G]
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Effect of electrode materials on resistive switching behaviour of NbOx-based memristive devices
Scientific reports 13(1), 17003 (2023) [10.1038/s41598-023-44110-w]
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Memristive devices for metrological applications
Acta IMEKO 12(3), 1 - 5 (2023) [10.21014/actaimeko.v12i3.1450]
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Influence of moisture on the ferroelectric properties of sputtered hafnium oxide thin films
Journal of applied physics 134(18), 185106 (2023) [10.1063/5.0171345]
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Migration-Enhanced Metal–Organic Chemical Vapor Deposition of Wafer-Scale Fully Coalesced WS 2 and WSe 2 Monolayers
Crystal growth & design 23(3), 1547 - 1558 (2023) [10.1021/acs.cgd.2c01134]
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Improved Arithmetic Performance by Combining Stateful and Non‐Stateful Logic in Resistive Random Access Memory 1T–1R Crossbars
Advanced intelligent systems 6(3), 2300579 (2023) [10.1002/aisy.202300579]
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Crystal-facet-dependent surface transformation dictates the oxygen evolution reaction activity in lanthanum nickelate
Nature Communications 14(1), 8284 (2023) [10.1038/s41467-023-43901-z]
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Sequence learning in a spiking neuronal network with memristive synapses
Neuromorphic computing and engineering 3, 034014 (2023) [10.1088/2634-4386/acf1c4]
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Ternary Łukasiewicz logic using memristive devices
Neuromorphic computing and engineering 3(4), 044001 - (2023) [10.1088/2634-4386/acfbf3]
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Correlation between Electronic Structure, Microstructure, and Switching Mode in Valence Change Mechanism Al 2 O 3 /TiO x ‐Based Memristive Devices
Advanced electronic materials 9(12), 2300520 (2023) [10.1002/aelm.202300520]
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A Physical Description of the Variability in Single‐ReRAM Devices and Hardware‐Based Neuronal Networks
Advanced intelligent systems 1, 2300129 (2023) [10.1002/aisy.202300129]
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Lateral Electrochemical Metallization Cells for Reconfigurable Interconnect Systems
IEEE journal of the Electron Devices Society 11, 432 - 437 (2023) [10.1109/JEDS.2023.3297855]
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Reversibility limitations of metal exsolution reactions in niobium and nickel co-doped strontium titanate
Journal of materials chemistry / A 11(33), 17718-17727 (2023) [10.1039/D3TA02927A]
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Simulating the filament morphology in electrochemical metallization cells
Neuromorphic computing and engineering 3(2), 024010 - (2023) [10.1088/2634-4386/acdbe5]
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Electrochemical Memristor‐Based Artificial Neurons and Synapses – fundamentals, applications, and challenges
Advanced materials 35(37), 2301924 (2023) [10.1002/adma.202301924]
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The MoS 2 -Graphene-Sapphire Heterostructure: Influence of Substrate Properties on the MoS 2 Band Structure
The journal of physical chemistry / C 127(22), 10878–10887 (2023) [10.1021/acs.jpcc.3c02503]
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Coherent noise enables probabilistic sequence replay in spiking neuronal networks
PLoS Computational Biology 19(5), 5 (2023) [10.1371/journal.pcbi.1010989]
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Bit slicing approaches for variability aware ReRAM CIM macros
Information technology 0(0), 1 (2023) [10.1515/itit-2023-0018]
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Effect of Oxygen Exchange between Two Oxide Layers of a Memristive Bilayer Valence-Change Memory Cell on the Switching Polarity
Physical review applied 19(4), 044084 (2023) [10.1103/PhysRevApplied.19.044084]
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Review on Resistive Switching Devices Based on Multiferroic BiFeO3
Nanomaterials 13(8), 1325 - (2023) [10.3390/nano13081325]
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System model of neuromorphic sequence learning on a memristive crossbar array
Neuromorphic computing and engineering 3, 024002 (2023) [10.1088/2634-4386/acca45]
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Study of Ni–Cr / CrN bilayer thin films resistor prepared by magnetron sputtering
Vacuum 213, 112085 - (2023) [10.1016/j.vacuum.2023.112085]
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Chemical Influence of Carbon Interface Layers in Metal/Oxide Resistive Switches
ACS applied materials & interfaces 15(14), 18528–18536 (2023) [10.1021/acsami.3c00920]
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A High-Entropy Oxide as High-Activity Electrocatalyst for Water Oxidation
ACS nano 17(6), 5329–5339 (2023) [10.1021/acsnano.2c08096]
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Spatio‐Temporal Correlations in Memristive Crossbar Arrays due to Thermal Effects
Advanced functional materials 33(22), 2213943 - (2023) [10.1002/adfm.202213943]
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SET Kinetics of Ag/HfO2-Based Diffusive Memristors under Various Counter-Electrode Materials
Micromachines 14(3), 571 - (2023) [10.3390/mi14030571]
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Powering internet-of-things from ambient energy: a review
JPhys energy 5(2), 022001 - (2023) [10.1088/2515-7655/acb5e6]
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Tailor-made synaptic dynamics based on memristive devices
Frontiers in electronic materials 3, 1061269 (2023) [10.3389/femat.2023.1061269]
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A Study of the Electroforming Process in 1T1R Memory Arrays
IEEE transactions on computer-aided design of integrated circuits and systems 42(2), 558 - 568 (2023) [10.1109/TCAD.2022.3175947]
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Microstructural and dielectric properties of Ba0.45Mg0.05Sr0.5-x CaxTiO3 high entropy ceramics
Materials chemistry and physics 296, 127290 - (2023) [10.1016/j.matchemphys.2022.127290]
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> 85% indium reduction for high-efficiency silicon heterojunction solar cells with aluminum-doped zinc oxide contacts
Solar energy materials & solar cells 251, 112120 (2023) [10.1016/j.solmat.2022.112120]
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Enhanced metal exsolution at the non-polar (001) surfaces of multi-faceted epitaxial thin films
JPhys energy 5(1), 014002 - (2023) [10.1088/2515-7655/ac9dbf]
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In-Gap States of HfO 2 Nanoislands Driven by Crystal Nucleation: Implications for Resistive Random-Access Memory Devices
ACS applied nano materials 6(1), 148-159 (2023) [10.1021/acsanm.2c04165]
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Stabilizing amplifier with a programmable load line for characterization of nanodevices with negative differential resistance
Review of scientific instruments 93(2), 024705 (2022) [10.1063/5.0080532]
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Unconventional short-range structural fluctuations in cuprate superconductors
Scientific reports 12(1), 20483 (2022) [10.1038/s41598-022-22150-y]
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Memristive Devices for Time Domain Compute-in-Memory
IEEE journal on exploratory solid-state computational devices and circuits 8(2), 119 - 127 (2022) [10.1109/JXCDC.2022.3217098]
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Study on sneak path effect in self-rectifying crossbar arrays based on emerging memristive devices
Frontiers in electronic materials 2, 988785 (2022) [10.3389/femat.2022.988785]
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Performance Analysis of Memristive-CNN based on a VCM Device Model
2022 IEEE International Symposium on Circuits and Systems (ISCAS), AustinAustin, TX, 27 May 2022 - 1 Jun 2022
... IEEE International Symposium on Circuits and Systems proceedings 1, 1 (2022) [10.1109/ISCAS48785.2022.9937918]
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Understanding Structural Incorporation of Oxygen Vacancies in Perovskite Cobaltite Films and Potential Consequences for Electrocatalysis
Chemistry of materials 34(24), 10373–10381 (2022) [10.1021/acs.chemmater.2c02043]
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Endurance of 2 Mbit Based BEOL Integrated ReRAM
IEEE access 10, 122696 - 122705 (2022) [10.1109/ACCESS.2022.3223657]
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Learning and replaying spatiotemporal sequences: A replication study
Frontiers in integrative neuroscience 16, 113 (2022) [10.3389/fnint.2022.974177]
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Atomically resolved electronic properties in single layer graphene on α-Al2O3 (0001) by chemical vapor deposition
Scientific reports 12(1), 18743 (2022) [10.1038/s41598-022-22889-4]
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Rigid-to-Flexible Transition in a Molecular Brush in a Good Solvent at a Semidilute Concentration
Langmuir 38(17), 5226 - 5236 (2022) [10.1021/acs.langmuir.1c02589]
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Effect of electron conduction on the read noise characteristics in ReRAM devices
APL materials 10(10), 101114 - (2022) [10.1063/5.0109787]
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Rebooting Computing in Post Moore Era
Advanced intelligent systems 4(8), 2200161 - (2022) [10.1002/aisy.202200161]
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A Deep Study of Resistance Switching Phenomena in TaO x ReRAM Cells: System‐Theoretic Dynamic Route Map Analysis and Experimental Verification
Advanced electronic materials 8(8), 2200182 - (2022) [10.1002/aelm.202200182]
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Strategies to Control the Relaxation Kinetics of Ag‐Based Diffusive Memristors and Implications for Device Operation
Advanced electronic materials 8(11), 2200549 - (2022) [10.1002/aelm.202200549]
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Quantum Conductance in Memristive Devices: Fundamentals, Developments, and Applications
Advanced materials 34(32), 2201248 - (2022) [10.1002/adma.202201248]
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Effects of Sr(Co, Nb, Ta)O 3 addition on the defect structures and electrical properties of ZnO-based varistors
Journal of materials chemistry / C 10(25), 9644 - 9654 (2022) [10.1039/D2TC01701F]
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Impact of Zr top electrode on tantalum oxide-based electrochemical metallization resistive switching memory: towards synaptic functionalities
RSC Advances 12(22), 14235 - 14245 (2022) [10.1039/D2RA02456J]
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A Voltage-Controlled, Oscillation-Based ADC Design for Computation-in-Memory Architectures Using Emerging ReRAMs
ACM journal on emerging technologies in computing systems 18(2), 1 - 25 (2022) [10.1145/3451212]
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Forming‐Free Resistive Switching of Electrochemical Titanium Oxide Localized Nanostructures: Anodization, Chemical Composition, Nanoscale Size Effects, and Memristive Storage
Advanced electronic materials 8(8), 2200215 - (2022) [10.1002/aelm.202200215]
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Microstructure engineering of yttrium-doped barium zirconate thin films via seed layer technique
Surface and coatings technology 434, 128161 - (2022) [10.1016/j.surfcoat.2022.128161]
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Memristive devices based on single ZnO nanowires—from material synthesis to neuromorphic functionalities
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Memristively programmable transistors
Nanotechnology 33(4), 045203 - (2022) [10.1088/1361-6528/ac317f]
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Highly-oriented proton conducting BaZr0.9Y0.1O3−x ceramic thin films prepared by chemical solution deposition
Journal of the European Ceramic Society 42(7), 3245 - 3253 (2022) [10.1016/j.jeurceramsoc.2022.02.019]
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Moisture Effect on the Threshold Switching of TOPO-Stabilized Sub-10 nm HfO 2 Nanocrystals in Nanoscale Devices
The journal of physical chemistry <Washington, DC> / C 126(43), 18571 - 18579 (2022) [10.1021/acs.jpcc.2c06303]
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Atomistic Insights into Activation and Degradation of La 0.6 Sr 0.4 CoO 3−δ Electrocatalysts under Oxygen Evolution Conditions
Journal of the American Chemical Society 144(39), 17966 - 17979 (2022) [10.1021/jacs.2c07226]
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Disentangling ionic and electronic contributions to the switching dynamics of memristive Pr 0.7 Ca 0.3 MnO 3 / Al devices by employing a two-resistor model
Physical review materials 6(9), 095002 (2022) [10.1103/PhysRevMaterials.6.095002]
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Rainer Waser – A Pioneer of Fundamentals of Resistive Switching Memories
Advanced electronic materials 8(8), 2200765 - (2022) [10.1002/aelm.202200765]
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Oxygen nonstoichiometry and electrical transport properties of Pr1-Ca MnO3 ceramics
Journal of the European Ceramic Society 42(15), 7049 - 7062 (2022) [10.1016/j.jeurceramsoc.2022.08.006]
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Modulating Spin Polarization and Spin-Orbit Interaction by Submonolayer Engineering at La Al O 3 / Sr Ti O 3 Interfaces
Physical review applied 18(3), 034012 (2022) [10.1103/PhysRevApplied.18.034012]
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Filamentary TaO x /HfO 2 ReRAM Devices for Neural Networks Training with Analog In‐Memory Computing
Advanced electronic materials 8(10), 2200448 - (2022) [10.1002/aelm.202200448]
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Sequence learning, prediction, and replay in networks of spiking neurons
PLoS Computational Biology 18, e1010233 (2022) [10.1371/journal.pcbi.1010233]
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Exploring the Ligand Functionality, Electronic Band Gaps, and Switching Characteristics of Single Wells–Dawson‐Type Polyoxometalates on Gold
Advanced materials interfaces 9(21), 2200461 - (2022) [10.1002/admi.202200461]
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Reliability aspects of binary vector-matrix-multiplications using ReRAM devices
Neuromorphic computing and engineering 2(3), 034001 - (2022) [10.1088/2634-4386/ac6d04]
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Activity-Stability Relationships in Oxide Electrocatalysts for Water Electrolysis
Frontiers in Chemistry 10, 913419 (2022) [10.3389/fchem.2022.913419]
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Impact of device design on the electronic and optoelectronic properties of integrated Ru-terpyridine complexes
Beilstein journal of nanotechnology 13, 219 - 229 (2022) [10.3762/bjnano.13.16]
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Toward Simplified Physics-Based Memristor Modeling of Valence Change Mechanism Devices
IEEE transactions on circuits and systems / 2 69(5), 2473 - 2477 (2022) [10.1109/TCSII.2022.3160304]
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Magnetic interlayer coupling between ferromagnetic SrRuO 3 layers through a SrIrO 3 spacer
Journal of applied physics 131(13), 133902 - (2022) [10.1063/5.0087098]
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Application of the Quantum-Point-Contact Formalism to Model the Filamentary Conduction in Ta 2 O 5 -Based Resistive Switching Devices
Physical review applied 17(3), 034062 (2022) [10.1103/PhysRevApplied.17.034062]
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Separating the Effects of Band Bending and Covalency in Hybrid Perovskite Oxide Electrocatalyst Bilayers for Water Electrolysis
ACS applied materials & interfaces 14(12), 14129–14136 (2022) [10.1021/acsami.1c20337]
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Quantitative Determination of Native Point‐Defect Concentrations at the ppm Level in Un‐Doped BaSnO 3 Thin Films
Advanced functional materials 32(19), 2113023 - (2022) [10.1002/adfm.202113023]
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Chemical Structure of Conductive Filaments in Tantalum Oxide Memristive Devices and Its Implications for the Formation Mechanism
Advanced electronic materials 8(8), 2100936 - (2022) [10.1002/aelm.202100936]
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MNEMOSENE: Tile Architecture and Simulator for Memristor-based Computation-in-memory
ACM journal on emerging technologies in computing systems 18(3), 1 - 24 (2022) [10.1145/3485824]
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Processing map to control the erosion of Y 2 O 3 in fluorine based etching plasmas
Journal of the American Ceramic Society 105(5), 3498-3509 (2022) [10.1111/jace.18334]
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Effect of the Threshold Kinetics on the Filament Relaxation Behavior of Ag‐Based Diffusive Memristors
Advanced functional materials 32(15), 2111242 - (2022) [10.1002/adfm.202111242]
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Oxygen Diffusion in Platinum Electrodes: A Molecular Dynamics Study of the Role of Extended Defects
Advanced materials interfaces 9(2), 2101257 (2022) [10.1002/admi.202101257]
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The role of fluorination during the physicochemical erosion of yttria in fluorine-based etching plasmas
Journal of the European Ceramic Society 42(2), 561 - 566 (2022) [10.1016/j.jeurceramsoc.2021.10.061]
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Design of Materials Configuration for Optimizing Redox‐Based Resistive Switching Memories
Advanced materials 34(3), 2105022 (2022) [10.1002/adma.202105022]
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Migration Kinetics of Surface Ions in Oxygen‐Deficient Perovskite During Topotactic Transitions (Small 51/2021)
Small 17(51), 2170269 (2021) [10.1002/smll.202170269]
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Nanoionic memristive phenomena in metal oxides: the valence change mechanism
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Structure‐Dependent Influence of Moisture on Resistive Switching Behavior of ZnO Thin Films
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Impact of moisture absorption on the resistive switching characteristics of a polyethylene oxide-based atomic switch
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Operando characterization of interfacial charge transfer processes
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Standards for the Characterization of Endurance in Resistive Switching Devices
ACS nano 15(11), 17214 - 17231 (2021) [10.1021/acsnano.1c06980]
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A Consistent Model for Short-Term Instability and Long-Term Retention in Filamentary Oxide-Based Memristive Devices
ACS applied materials & interfaces 13(48), 58066 - 58075 (2021) [10.1021/acsami.1c14667]
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In situ spectroscopic ellipsometry as a pathway toward achieving VO 2 stoichiometry for amorphous vanadium oxide with magnetron sputtering
AIP Advances 11(3), 035126 - (2021) [10.1063/5.0041116]
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Synthesis, Structure, and Surface Adsorption Characteristics of a Polynuclear Mn II,IV –Yb III Complex
Inorganic chemistry 60(14), 10415 - 10425 (2021) [10.1021/acs.inorgchem.1c00994]
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Comments on “Experimental Demonstration of Memristor-Aided Logic (MAGIC) Using Valence Change Memory (VCM)”
IEEE transactions on electron devices 68(11), 5925 - 5925 (2021) [10.1109/TED.2021.3109855]
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Intrinsic RESET Speed Limit of Valence Change Memories
ACS applied electronic materials 3(12), 5563 - 5572 (2021) [10.1021/acsaelm.1c00981]
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TiO x /Pt 3 Ti(111) surface-directed formation of electronically responsive supramolecular assemblies of tungsten oxide clusters
Beilstein journal of nanotechnology 12, 203 - 212 (2021) [10.3762/bjnano.12.16]
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Faster Diffusion of Oxygen Along Dislocations in (La,Sr)MnO 3+δ Is a Space‐Charge Phenomenon
Advanced functional materials 31(51), 2105647 - (2021) [10.1002/adfm.202105647]
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Migration Kinetics of Surface Ions in Oxygen‐Deficient Perovskite During Topotactic Transitions
Small 17(51), 2104356 (2021) [10.1002/smll.202104356]
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Review of Manufacturing Process Defects and Their Effects on Memristive Devices
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Current-limiting amplifier for high speed measurement of resistive switching data
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Functional Modifications Induced via X‐ray Nanopatterning in TiO 2 Rutile Single Crystals
Physica status solidi / Rapid research letters 15(10), 2100409 (2021) [10.1002/pssr.202100409]
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Determining the Electrical Charging Speed Limit of ReRAM Devices
IEEE journal of the Electron Devices Society 9, 667 - 678 (2021) [10.1109/JEDS.2021.3095389]
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Carbonate formation lowers the electrocatalytic activity of perovskite oxides for water electrolysis
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Exploring Area-Dependent Pr0.7Ca0.3MnO3-Based Memristive Devices as Synapses in Spiking and Artificial Neural Networks
Frontiers in neuroscience 15, 661261 (2021) [10.3389/fnins.2021.661261]
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A comprehensive model of electron conduction in oxide-based memristive devices
ACS applied electronic materials 3(9), 3674 - 3692 (2021) [10.1021/acsaelm.1c00398]
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Theory and experimental verification of configurable computing with stochastic memristors
Scientific reports 11(1), 4218 (2021) [10.1038/s41598-021-83382-y]
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Local inhomogeneities resolved by scanning probe techniques and their impact on local 2DEG formation in oxide heterostructures
Nanoscale advances 3(14), 10.1039.D1NA00190F (2021) [10.1039/D1NA00190F]
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Utilizing the Switching Stochasticity of HfO2/TiOx-Based ReRAM Devices and the Concept of Multiple Device Synapses for the Classification of Overlapping and Noisy Patterns
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Nanoscopic Surface Decomposition of Pr 0.5 Ba 0.5 CoO 3−δ Perovskites Turns Performance Descriptors Ambiguous
The journal of physical chemistry <Washington, DC> / C 125(18), 10043–10050 (2021) [10.1021/acs.jpcc.1c00976]
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Electrochemical methods for determining ionic charge in solids
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Exsolution of Embedded Nanoparticles in Defect Engineered Perovskite Layers
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Tuning electrochemically driven surface transformation in atomically flat LaNiO3 thin films for enhanced water electrolysis
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Impact of the Ohmic Electrode on the Endurance of Oxide-Based Resistive Switching Memory
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Preservation of the donor–acceptor character of a carbazole–phenalenone dyad upon adsorption on Pt(111)
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The importance of singly charged oxygen vacancies for electrical conduction in monoclinic HfO 2
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Trade-off between variability and retention of memristive epitaxial SrTiO 3 devices
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Stoichiometry and Termination Control of LaAlO 3 /SrTiO 3 Bilayer Interfaces
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Identifying Ionic and Electronic Charge Transfer at Oxide Heterointerfaces
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Trade‐Off Between Data Retention and Switching Speed in Resistive Switching ReRAM Devices
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Behavior of cation vacancies in single-crystal and in thin-film SrTiO 3 : The importance of strontium vacancies and their defect associates
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In‐Memory Binary Vector–Matrix Multiplication Based on Complementary Resistive Switches
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Memristors with alloyed electrodes
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Brain‐Inspired Structural Plasticity through Reweighting and Rewiring in Multi‐Terminal Self‐Organizing Memristive Nanowire Networks
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Water-Mediated Ionic Migration in Memristive Nanowires with a Tunable Resistive Switching Mechanism
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Studying the switching variability in redox-based resistive switching devices
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HRS Instability in Oxide-Based Bipolar Resistive Switching Cells
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In‐Memory Binary Vector–Matrix Multiplication Based on Complementary Resistive Switches
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Integration of Individual Functionalized Gold Nanoparticles into Nanoelectrode Configurations: Recent Advances
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Photoemission electron microscopy of magneto-ionic effects in La0.7Sr0.3MnO3
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Dynamics of the spatial separation of electrons and mobile oxygen vacancies in oxide heterostructures
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Emerging materials in neuromorphic computing: Guest editorial
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Copper facilitated nickel oxy-hydroxide films as efficient synergistic oxygen evolution electrocatalyst
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Electric transport properties of rare earth doped YbxCa1-xMnO3 ceramics (part III: Point defect chemistry)
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Competition between V2O3 phases deposited by one-step reactive sputtering process on polycrystalline conducting electrode
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Control of stoichiometry and morphology in polycrystalline V2O3 thin films using oxygen buffers
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Experimental Demonstration of Memristor-Aided Logic (MAGIC) Using Valence Change Memory (VCM)
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Picosecond multilevel resistive switching in tantalum oxide thin films
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Phonon‐Enhanced Near‐Field Spectroscopy to Extract the Local Electronic Properties of Buried 2D Electron Systems in Oxide Heterostructures
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Antiphase Boundaries Constitute Fast Cation Diffusion Paths in SrTiO 3 Memristive Devices
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Variability-Aware Modeling of Filamentary Oxide-Based Bipolar Resistive Switching Cells Using SPICE Level Compact Models
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Evolution of short-range order in chemically and physically grown thin film bilayer structures for electronic applications
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Comprehensive model for the electronic transport in Pt/SrTi O 3 analog memristive devices
Physical review / B 102(3), 035307 (2020) [10.1103/PhysRevB.102.035307]
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Cation diffusion in polycrystalline thin films of monoclinic HfO 2 deposited by atomic layer deposition
APL materials 8(8), 081104 - (2020) [10.1063/5.0013965]
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Charge-transfer engineering strategies for tailored ionic conductivity at oxide interfaces
Journal of materials chemistry / C Materials for optical and electronic devices 8(33), 11354 - 11359 (2020) [10.1039/D0TC01780A]
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Study of the SET switching event of VCM-based memories on a picosecond timescale
Journal of applied physics 127(20), 204501 - (2020) [10.1063/5.0003840]
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Oxygen vacancies: The (in)visible friend of oxide electronics
Applied physics letters 116(12), 120505 - (2020) [10.1063/1.5143309]
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Electronic Inhomogeneity Influence on the Anomalous Hall Resistivity Loops of SrRuO 3 Epitaxially Interfaced with 5d Perovskites
ACS omega 5(11), 5824 - 5833 (2020) [10.1021/acsomega.9b03996]
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Validity of magnetotransport detection of skyrmions in epitaxial SrRuO 3 heterostructures
Physical review materials 4(5), 054402 (2020) [10.1103/PhysRevMaterials.4.054402]
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Design of defect-chemical properties and device performance in memristive systems
Science advances 6(19), eaaz9079 - (2020) [10.1126/sciadv.aaz9079]
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Defect chemistry of donor-doped BaTiO 3 with BaO-excess for reduction resistant PTCR thermistor applications – redox-behaviour
Physical chemistry, chemical physics 22(15), 8219-8232 (2020) [10.1039/C9CP06793K]
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Vertical Ge Gate-All-Around Nanowire pMOSFETs With a Diameter Down to 20 nm
IEEE electron device letters 41(4), 533 - 536 (2020) [10.1109/LED.2020.2971034]
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Transport through Redox-Active Ru-Terpyridine Complexes Integrated in Single Nanoparticle Devices
The journal of physical chemistry <Washington, DC> / C C, Nanomaterials and interfaces 124(8), 4881 - 4889 (2020) [10.1021/acs.jpcc.9b11716]
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Tailoring the Cavity of Hollow Polyelectrolyte Microgels
Macromolecular rapid communications 41(1), 1900422 - (2020) [10.1002/marc.201900422]
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Effect of Cationic Interface Defects on Band Alignment and Contact Resistance in Metal/Oxide Heterojunctions
Advanced electronic materials 6(1), 1900808 - (2020) [10.1002/aelm.201900808]
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SrTiO 3 termination control: a method to tailor the oxygen exchange kinetics
Materials Research Letters 8(1), 31 - 40 (2020) [10.1080/21663831.2019.1682705]
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On the role of the metal oxide/reactive electrode interface during the forming procedure of valence change ReRAM devices
Nanoscale 11(39), 18201 - 18208 (2019) [10.1039/C9NR06624A]
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Towards Oxide Electronics: a Roadmap
Applied surface science 482, 1 - 93 (2019) [10.1016/j.apsusc.2019.03.312]
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Analyses of a 1-layer neuromorphic network using memristive devices with non-continuous resistance levels
APL materials 7(9), 091110 - (2019) [10.1063/1.5108658]
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Sklansky tree adder realization in 1S1R resistive switching memory architecture
European physical journal special topics 228(10), 2269 - 2285 (2019) [10.1140/epjst/e2019-900042-x]
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Redox-based memristive devices for new computing paradigm
APL materials 7(11), 110903 - (2019) [10.1063/1.5129101]
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Conductive Self-Assembled Monolayers of Paramagnetic {CoIICo4III} and {Co4IICo2III} Coordination Clusters on Gold Surfaces
Frontiers in Chemistry 7, 681 (2019) [10.3389/fchem.2019.00681]
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Epitaxial catalysts for oxygen evolution reaction: model systems and beyond
JPhys energy 1(3), 031001 - (2019) [10.1088/2515-7655/ab1577]
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Metallic filamentary conduction in valence change-based resistive switching devices: the case of TaO x thin film with x ∼ 1
Nanoscale 11(36), 16978 - 16990 (2019) [10.1039/C9NR05285B]
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Self-reduction of the native TiO2 (110) surface during cooling after thermal annealing – in-operando investigations
Scientific reports 9(1), 12563 (2019) [10.1038/s41598-019-48837-3]
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Engineering antiphase boundaries in epitaxial SrTiO 3 to achieve forming free memristive devices
APL materials 7(10), 101127 - (2019) [10.1063/1.5125211]
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Topotactic Phase Transition Driving Memristive Behavior
Advanced materials 31(40), 1903391 - (2019) [10.1002/adma.201903391]
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Mott-transition-based RRAM
Materials today 28, 63 - 80 (2019) [10.1016/j.mattod.2019.06.006]
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Stateful Three-Input Logic with Memristive Switches
Scientific reports 9(1), 14618 (2019) [10.1038/s41598-019-51039-6]
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Controlling the Electronic Contact at the Terpyridine/Metal Interface
The journal of physical chemistry <Washington, DC> / C C, Nanomaterials and interfaces 123(35), 21367 - 21375 (2019) [10.1021/acs.jpcc.9b05865]
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Exploiting the switching dynamics of HfO2/TiOx-based ReRAM devices for reliable analogue memristive behaviour
APL materials 7, 091105 (2019) [10.1063/1.5108654]
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Volatile Rhenium(I) Compounds with Re–N Bonds and Their Conversion into Oriented Rhenium Nitride Films by Magnetic Field-Assisted Vapor Phase Deposition
Inorganic chemistry 58(15), 10408 - 10416 (2019) [10.1021/acs.inorgchem.9b01656]
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Complex Adsorption Behavior of a Nonplanar Naphthalene Diimide on Au(111)
The journal of physical chemistry <Washington, DC> / C C, Nanomaterials and interfaces 123(15), 9860 - 9867 (2019) [10.1021/acs.jpcc.9b00554]
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Chemical control of the electrical surface properties in donor-doped transition metal oxides
Physical review materials 3(4), 044604 (2019) [10.1103/PhysRevMaterials.3.044604]
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Electrolysis of Water at Atomically Tailored Epitaxial Cobaltite Surfaces
Chemistry of materials 31(7), 2337 - 2346 (2019) [10.1021/acs.chemmater.8b04577]
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An atomistic view on the Schottky barrier lowering applied to SrTiO 3 /Pt contacts
AIP Advances 9(4), 045116 - (2019) [10.1063/1.5082733]
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Heavily donor-doped, optically translucent and ferroelectric barium titanate ceramics through defect chemical engineering
CrystEngComm 21(18), 2854 (2019) [10.1039/C9CE00189A]
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Electric transport properties of rare earth doped YbxCa1-xMnO3 ceramics (part I: Optimization of ceramic processing)
Journal of the European Ceramic Society 39(4), 1245 - 1250 (2019) [10.1016/j.jeurceramsoc.2018.12.020]
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Stepwise Growth of Ruthenium Terpyridine Complexes on Au Surfaces
The journal of physical chemistry <Washington, DC> / C C, Nanomaterials and interfaces 123(11), 6537 - 6548 (2019) [10.1021/acs.jpcc.8b12039]
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Current channeling along extended defects during electroreduction of SrTiO3
Scientific reports 9(1), 2502 (2019) [10.1038/s41598-019-39372-2]
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Compact Modeling of Complementary Switching in Oxide-Based ReRAM Devices
IEEE transactions on electron devices 66(3), 1268 - 1275 (2019) [10.1109/TED.2019.2892997]
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Interplay between the amphipathic polyoxometalate interactions in solution and at solid–liquid interfaces: a toolbox for the technical application
Nanoscale 11(10), 4267-4277 (2019) [10.1039/C8NR08008A]
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Rotational switches in the two-dimensional fullerene quasicrystal
Acta crystallographica / A Foundations and advances Section A 75(1), 41 - 49 (2019) [10.1107/S2053273318015681]
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A bottom-up process of self-formation of highly conductive titanium oxide (TiO) nanowires on reduced SrTiO 3
Nanoscale 11(1), 89-97 (2019) [10.1039/C8NR04545C]
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In-Gap States and Band-Like Transport in Memristive Devices
Nano letters 19(1), 54-60 (2019) [10.1021/acs.nanolett.8b03023]
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Nanospectroscopy of Infrared Phonon Resonance Enables Local Quantification of Electronic Properties in Doped SrTiO 3 Ceramics
Advanced functional materials 28(42), 1802834 - (2018) [10.1002/adfm.201802834]
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Field-Driven Hopping Transport of Oxygen Vacancies in Memristive Oxide Switches with Interface-Mediated Resistive Switching
Physical review applied 10(5), 054025 (2018) [10.1103/PhysRevApplied.10.054025]
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Electrochemically prepared oxides for resistive switching devices
Electrochimica acta 274, 103 - 111 (2018) [10.1016/j.electacta.2018.04.087]
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Spring-Like Pseudoelectroelasticity of Monocrystalline Cu 2 S Nanowire
Nano letters 18(8), 5070 - 5077 (2018) [10.1021/acs.nanolett.8b01914]
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Silicon Oxide (SiO x ): A Promising Material for Resistance Switching?
Advanced materials 30(43), 1801187 - (2018) [10.1002/adma.201801187]
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Exploring the Dynamics of Real-World Memristors on the Basis of Circuit Theoretic Model Predictions
IEEE circuits and systems magazine 18(2), 48 - 76 (2018) [10.1109/MCAS.2018.2821760]
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Crossover From Deterministic to Stochastic Nature of Resistive-Switching Statistics in a Tantalum Oxide Thin Film
IEEE transactions on electron devices 65(10), 4320 - 4325 (2018) [10.1109/TED.2018.2866127]
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Kogge-Stone Adder Realization using 1S1R Resistive Switching Crossbar Arrays
ACM journal on emerging technologies in computing systems 14(2), Article No. 30 (2018) [10.1145/3183352]
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KMC Simulation of the Electroforming, Set and Reset Processes in Redox-Based Resistive Switching Devices
IEEE transactions on nanotechnology 17(6), 1181 - 1188 (2018) [10.1109/TNANO.2018.2867904]
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Field-enhanced route to generating anti-Frenkel pairs in HfO 2
Physical review materials 2(3), 035002 (2018) [10.1103/PhysRevMaterials.2.035002]
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Addressing Multiple Resistive States of Polyoxovanadates: Conductivity as a Function of Individual Molecular Redox States
Journal of the American Chemical Society 140(48), 16635 - 16640 (2018) [10.1021/jacs.8b08780]
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Self-limited single nanowire systems combining all-in-one memristive and neuromorphic functionalities
Nature Communications 9(1), 5151 (2018) [10.1038/s41467-018-07330-7]
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Au Nanoparticles as Template for Defect Formation in Memristive SrTiO3 Thin Films
Nanomaterials 8(11), 869 (2018) [10.3390/nano8110869]
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Tailoring the switching performance of resistive switching SrTiO3 devices by SrO interface engineering
Solid state ionics 325, 247 - 250 (2018) [10.1016/j.ssi.2018.09.003]
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Principal component analysis: Reveal camouflaged information in x-ray absorption spectroscopy photoemission electron microscopy of complex thin oxide films
Thin solid films 665, 75-84 (2018) [10.1016/j.tsf.2018.09.010]
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Valence change detection in memristive oxide based heterostructure cells by hard X-ray photoelectron emission spectroscopy
APL materials 6(4), 046106 - (2018) [10.1063/1.5026063]
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Correlation between the transport mechanisms in conductive filaments inside Ta 2 O 5 -based resistive switching devices and in substoichiometric TaO x thin films
Applied physics letters 112(21), 213504 - (2018) [10.1063/1.5024504]
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A Theoretical and Experimental View on the Temperature Dependence of the Electronic Conduction through a Schottky Barrier in a Resistively Switching SrTiO 3 -Based Memory Cell
Advanced electronic materials 4(7), 1800062 - (2018) [10.1002/aelm.201800062]
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Understanding the Coexistence of Two Bipolar Resistive Switching Modes with Opposite Polarity in Pt/TiO 2 /Ti/Pt Nanosized ReRAM Devices
ACS applied materials & interfaces 10(35), 29766 - 29778 (2018) [10.1021/acsami.8b09068]
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Improved Switching Stability and the Effect of an Internal Series Resistor in HfO 2 /TiO x Bilayer ReRAM Cells
IEEE transactions on electron devices 65(8), 3229 - 3236 (2018) [10.1109/TED.2018.2849872]
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Charge-transfer in B-site-depleted NdGaO 3 /SrTiO 3 heterostructures
APL materials 6(7), 076104 - (2018) [10.1063/1.5038773]
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Reduction of the forming voltage through tailored oxygen non-stoichiometry in tantalum oxide ReRAM devices
Scientific reports 8(1), 10861 (2018) [10.1038/s41598-018-28992-9]
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Local surface conductivity of transition metal oxides mapped with true atomic resolution
Nanoscale 10(24), 11498 - 11505 (2018) [10.1039/C8NR02562B]
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Effects of moisture and redox reactions in VCM and ECM resistive switching memories
Journal of physics / D 51(41), 413001 - (2018) [10.1088/1361-6463/aad581]
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UV radiation enhanced oxygen vacancy formation caused by the PLD plasma plume
Scientific reports 8(1), 8846 (2018) [10.1038/s41598-018-27207-5]
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Oxygen Exchange Processes between Oxide Memristive Devices and Water Molecules
Advanced materials 30(29), 1800957 - (2018) [10.1002/adma.201800957]
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Resistive switching in optoelectronic III-V materials based on deep traps
Scientific reports 8(1), 9483 (2018) [10.1038/s41598-018-27835-x]
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Electrical nanopatterning of TiO 2 single crystal surfaces in situ via local resistance and potential switching
APL materials 6(6), 066105 - (2018) [10.1063/1.5028424]
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Impact of Fe doping on the electronic structure of SrTiO 3 thin films determined by resonant photoemission
The journal of chemical physics 148(15), 154702 - (2018) [10.1063/1.5007928]
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Nanoarchitectonics for Controlling the Number of Dopant Atoms in Solid Electrolyte Nanodots
Advanced materials 30(6), 1703261 - (2018) [10.1002/adma.201703261]
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Degradation Kinetics during Oxygen Electrocatalysis on Perovskite-Based Surfaces in Alkaline Media
Langmuir 34(4), 1347 - 1352 (2018) [10.1021/acs.langmuir.7b03733]
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Different threshold and bipolar resistive switching mechanisms in reactively sputtered amorphous undoped and Cr-doped vanadium oxide thin films
Journal of applied physics 123(4), 044502 - (2018) [10.1063/1.5006145]
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Processes and Effects of Oxygen and Moisture in Resistively Switching TaO x and HfO x
Advanced electronic materials 4(1), 1700458 - (2018) [10.1002/aelm.201700458]
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Influence of Dislocations in Transition Metal Oxides on Selected Physical and Chemical Properties
Crystals 8(6), 241 - (2018) [10.3390/cryst8060241]
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Electrically controlled transformation of memristive titanates into mesoporous titanium oxides via incongruent sublimation
Scientific reports 8(1), 3774 (2018) [10.1038/s41598-018-22238-4]
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Role of the Electrode Material on the RESET Limitation in Oxide ReRAM Devices
Advanced electronic materials 4(2), 1700243 - (2018) [10.1002/aelm.201700243]
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Multi-valued and Fuzzy Logic Realization using TaOx Memristive Devices
Scientific reports 8(1), 8 (2018) [10.1038/s41598-017-18329-3]
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A SIMS study of cation and anion diffusion in tantalum oxide
Physical chemistry, chemical physics 20(2), 989 - 996 (2018) [10.1039/C7CP07441G]
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Impact of defect chemistry on cathode performance: A case study of Pr-doped ceria
Solid state ionics 314, 204 - 211 (2018) [10.1016/j.ssi.2017.09.023]
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Pulse wake-up and breakdown investigation of ferroelectric yttrium doped HfO 2
Journal of applied physics 121(15), 154102 - (2017) [10.1063/1.4981893]
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Comprehensive modeling of electrochemical metallization memory cells
Journal of computational electronics 16(4), 1017 - 1037 (2017) [10.1007/s10825-017-1051-2]
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Tuning the surface structure and conductivity of niobium-doped rutile TiO 2 single crystals via thermal reduction
Physical chemistry, chemical physics 19(45), 30339 - 30350 (2017) [10.1039/C7CP03136J]
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Imaging Individual Molecular-Like Orbitals of a Non-Planar Naphthalene Diimide on Pt(111): A Combined STM and DFT Study
The journal of physical chemistry <Washington, DC> / C 121(48), 26916–26924 (2017) [10.1021/acs.jpcc.7b09911]
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Investigation of the Impact of High Temperatures on the Switching Kinetics of Redox-Based Resistive Switching Cells using a High-Speed Nanoheater
Advanced electronic materials 3(12), 1700294 (2017) [10.1002/aelm.201700294]
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Understanding on the selective carbon monoxide sensing characteristics of copper oxide-zinc oxide composite thin films
Sensors and actuators <Lausanne> / B 253, 685 - 696 (2017) [10.1016/j.snb.2017.06.154]
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Improvement of SET variability in TaO x based resistive RAM devices
Nanotechnology 28(46), 465203 - (2017) [10.1088/1361-6528/aa8f89]
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Volatile HRS asymmetry and subloops in resistive switching oxides
Nanoscale 9(38), 14414 - 14422 (2017) [10.1039/C7NR04896C]
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Resistive Switching of Sub-10 nm TiO2 Nanoparticle Self-Assembled Monolayers
Nanomaterials 7(11), 370 (2017) [10.3390/nano7110370]
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Spectroscopic Indications of Tunnel Barrier Charging as the Switching Mechanism in Memristive Devices
Advanced functional materials 27(45), 1702282 - (2017) [10.1002/adfm.201702282]
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Ferroelectricity in Lu doped HfO2 layers
Applied physics letters 111(14), 142904 - (2017) [10.1063/1.4998336]
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Ordering and Phase Control in Epitaxial Double-Perovskite Catalysts for the Oxygen Evolution Reaction
ACS catalysis 7, 7029 - 7037 (2017) [10.1021/acscatal.7b02036]
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Thin film proton conducting membranes for micro-solid oxide fuel cells by chemical solution deposition
Thin solid films 636, 446 - 457 (2017) [10.1016/j.tsf.2017.06.038]
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Design rules for threshold switches based on a field triggered thermal runaway mechanism
Journal of computational electronics 16(4), 1175–1185 (2017) [10.1007/s10825-017-1061-0]
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Probing electrochemistry at the nanoscale: in situ TEM and STM characterizations of conducting filaments in memristive devices
Journal of electroceramics 39(1-4), 73–93 (2017) [10.1007/s10832-017-0069-y]
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Interaction between depolarization effects, interface layer, and fatigue behavior in PZT thin film capacitors
Journal of applied physics 122(2), 024105 (2017) [10.1063/1.4992812]
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Subfilamentary Networks Cause Cycle-to-Cycle Variability in Memristive Devices
ACS nano 11(7), 6921 - 6929 (2017) [10.1021/acsnano.7b02113]
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Anomalous Resistance Hysteresis in Oxide ReRAM: Oxygen Evolution and Reincorporation Revealed by In Situ TEM
Advanced materials 29(23), 1700212 (2017) [10.1002/adma.201700212]
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In situ study of redox processes on the surface of SrTiO$_{3}$ single crystals
Applied surface science 432, 46-52 (2017) [10.1016/j.apsusc.2017.06.272]
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Stability and Decomposition of Perovskite-Type Titanates upon High-Temperature Reduction
Physica status solidi / Rapid research letters 11(9), 1700222 - (2017) [10.1002/pssr.201700222]
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Interfacial Metal–Oxide Interactions in Resistive Switching Memories
ACS applied materials & interfaces 9(22), 19287 - 19295 (2017) [10.1021/acsami.7b02921]
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An extensive study of the influence of dopants on the ferroelectric properties of HfO 2
Journal of materials chemistry / C 5(2), 333 - 338 (2017) [10.1039/C6TC04807B]
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Interface-driven formation of a two-dimensional dodecagonal fullerene quasicrystal
Nature Communications 8, 15367 (2017) [10.1038/ncomms15367]
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Oxygen partial pressure dependence of surface space charge formation in donor-doped SrTiO 321
APL materials 5(5), 056106 - (2017) [10.1063/1.4983618]
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Molecular Characteristics of a Mixed-Valence Polyoxovanadate {V IV/V 18 O 42 } in Solution and at the Liquid–Surface Interface
The journal of physical chemistry <Washington, DC> / C 121(19), 10419 - 10429 (2017) [10.1021/acs.jpcc.7b02138]
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Structure and orbital ordering of ultrathin LaVO 3 probed by atomic resolution electron microscopy and Raman spectroscopy
Physica status solidi / Rapid research letters 11(3), 1600350 - (2017) [10.1002/pssr.201600350]
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Ion migration in crystalline and amorphous HfO$_{X}$
The journal of chemical physics 146(9), 094508 - (2017) [10.1063/1.4977453]
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Coexistence of Grain-Boundaries-Assisted Bipolar and Threshold Resistive Switching in Multilayer Hexagonal Boron Nitride
Advanced functional materials 27(10), 1604811 - (2017) [10.1002/adfm.201604811]
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SET kinetics of electrochemical metallization cells: influence of counter-electrodes in SiO $_{2}$ /Ag based systems
Nanotechnology 28(13), 135205 - (2017) [10.1088/1361-6528/aa5e59]
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3-bit Resistive RAM Write-Read Scheme Based on Complementary Switching Mechanism
IEEE electron device letters 38(4), 449 - 452 (2017) [10.1109/LED.2017.2670642]
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Mobility Modulation and Suppression of Defect Formation in Two-Dimensional Electron Systems by Charge-Transfer ManagementRC
ACS applied materials & interfaces 9(12), 10888 - 10896 (2017) [10.1021/acsami.7b00905]
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Energy Level Alignment at the Fullerene/Titanium Oxide Ultrathin Film Interface
The journal of physical chemistry <Washington, DC> / C 121(5), 2815 - 2821 (2017) [10.1021/acs.jpcc.6b11386]
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Unraveling the enhanced Oxygen Vacancy Formation in Complex Oxides during Annealing and Growth
Scientific reports 7, 39953 - (2017) [10.1038/srep39953]
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Thermodynamic Ground States of Complex Oxide Heterointerfaces
ACS applied materials & interfaces 9(1), 1086 - 1092 (2017) [10.1021/acsami.6b12706]
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Preface
Thin solid films 617(Part B), 55 (2016) [10.1016/j.tsf.2016.11.011]
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Resistive Switching in Aqueous Nanopores by Shock Electrodeposition
Electrochimica acta 222, 370 - 375 (2016) [10.1016/j.electacta.2016.10.188]
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Multidimensional Simulation of Threshold Switching in NbO$_{2}$ Based on an Electric Field Triggered Thermal Runaway Model
Advanced electronic materials 2(7), 1600169 - (2016) [10.1002/aelm.201600169]
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Ionic conductivity of low yttria-doped cubic zirconium oxide nitride single crystals
Solid state ionics 296, 42 - 46 (2016) [10.1016/j.ssi.2016.08.015]
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Electrochemical processes and device improvement in conductive bridge RAM cells
Physica status solidi / A 213(2), 274 - 288 (2016) [10.1002/pssa.201532813]
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Direct Observation of Redox Switching in Resistive Memory Devices Operated In-situ in a Transmission Electron Microscope by Electron Energy Loss Spectroscopy and Off-Axis Electron Holography
3rd International Conference on Insitu and Correlative Electron Microscopy, SaarbrückenSaarbrücken, Germany, 11 Oct 2016 - 12 Oct 2016
Microscopy and microanalysis 22(S5), 52 - 53 (2016) [10.1017/S1431927616012289]
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Phthalocyanine adsorption on Au(1 1 0): 1D ordering and adaptive reconstruction
Journal of physics / Condensed matter 28(43), 434001 - (2016) [10.1088/0953-8984/28/43/434001]
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Resistive Switching Mechanisms on TaO$_{x}$ and SrRuO$_{3}$ Thin-Film Surfaces Probed by Scanning Tunneling Microscopy
ACS nano 10(1), 1481 - 1492 (2016) [10.1021/acsnano.5b07020]
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Memristive sorting networks enabled by electrochemical metallization cells
International journal of unconventional computing 12(4), 303-317 (2016)
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Evidence for oxygen vacancies movement during wake-up in ferroelectric hafnium oxide
Applied physics letters 108(3), 032903 - (2016) [10.1063/1.4940370]
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Uniting Gradual and Abrupt set Processes in Resistive Switching Oxides
Physical review applied 6(6), 064015 (2016) [10.1103/PhysRevApplied.6.064015]
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The influence of non-stoichiometry on the switching kinetics of strontium-titanate ReRAM devices
Journal of applied physics 120(24), 244502 - (2016) [10.1063/1.4972833]
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Pulsed laser deposition of SrRuO 3 thin-films: The role of the pulse repetition rate
APL materials 4(12), 126109 - (2016) [10.1063/1.4972996]
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Formation mechanism of Ruddlesden-Popper-type antiphase boundaries during the kinetically limited growth of Sr rich SrTiO$_{3}$ thin films
Scientific reports 6, 38296 - (2016) [10.1038/srep38296]
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Resistance switching behavior of atomic layer deposited SrTiO$_{3}$ film through possible formation of Sr$_{2}$Ti$_{6}$O$_{13}$ or Sr$_{1}$Ti$_{11}$O$_{20}$ phases
Scientific reports 6, 20550 - (2016) [10.1038/srep20550]
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Nonlinearity analysis of TaOX redox-based RRAM
Microelectronic engineering 154, 38 - 41 (2016) [10.1016/j.mee.2016.01.025]
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3-Bit Multilevel Switching by Deep Reset Phenomenon in Pt/W/TaO$_{X}$ /Pt-ReRAM Devices
IEEE electron device letters 37(5), 564 - 567 (2016) [10.1109/LED.2016.2542879]
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Humidity effects on the redox reactions and ionic transport in a Cu/Ta$_{2}$ O$_{5}$ /Pt atomic switch structure
Japanese journal of applied physics 55(6S1), 06GJ09 - (2016) [10.7567/JJAP.55.06GJ09]
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Impact of oxygen exchange reaction at the ohmic interface in Ta$_{2}$ O$_{5}$ -based ReRAM devices
Nanoscale 8(41), 17774 - 17781 (2016) [10.1039/C6NR03810G]
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Stability and Degradation of Perovskite Electrocatalysts for Oxygen Evolution Reaction
Electrochimica acta 218, 156 - 162 (2016) [10.1016/j.electacta.2016.09.116]
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Multistate Memristive Tantalum Oxide Devices for Ternary Arithmetic
Scientific reports 6, 36652 - (2016) [10.1038/srep36652]
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Nanoscale electrochemistry using dielectric thin films as solid electrolytes
Nanoscale 8(29), 13828 - 13837 (2016) [10.1039/C6NR01383J]
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Quantifying redox-induced Schottky barrier variations in memristive devices via in operando spectromicroscopy with graphene electrodes
Nature Communications 7, 12398 - (2016) [10.1038/ncomms12398]
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Disentanglement of growth dynamic and thermodynamic effects in LaAlO$_{3}$/SrTiO$_{3}$ heterostructures
Scientific reports 6, 22410 (2016) [10.1038/srep22410]
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Tuning the surface electronic structure of a Pt $_{3}$ Ti(111) electro catalyst
Nanoscale 8(29), 13924 - 13933 (2016) [10.1039/C5NR08420B]
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Dynamics of the metal-insulator transition of donor-doped SrTi O $_{3}$
Physical review / B 94(11), 115408 (2016) [10.1103/PhysRevB.94.115408]
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Defect Control of Conventional and Anomalous Electron Transport at Complex Oxide Interfaces
Physical review / X 6(3), 031035 (2016) [10.1103/PhysRevX.6.031035]
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Homogeneity and variation of donor doping in Verneuil-grown SrTiO$_{3}$:Nb single crystals
Scientific reports 6, 32250 (2016) [10.1038/srep32250]
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Hydroxyl defect effect on the resistance degradation behavior in Y-doped (Ba,Ca)(Ti,Zr)O$_{3}$ bulk ceramics
Journal of the European Ceramic Society 36(13), 3147 - 3155 (2016) [10.1016/j.jeurceramsoc.2016.04.041]
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Electrochemistry at the Nanoscale
Nanoscale 8(29), 13825 - 13827 (2016) [10.1039/C6NR90142E]
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Space charges and defect concentration profiles at complex oxide interfaces
Physical review / B 93(24), 245431 (2016) [10.1103/PhysRevB.93.245431]
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Hafnium carbide formation in oxygen deficient hafnium oxide thin films
Applied physics letters 108(25), 252903 - (2016) [10.1063/1.4954714]
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Probing orbital ordering in LaVO$_{3}$ epitaxial films by Raman scattering
APL materials 4(4), 046103 - (2016) [10.1063/1.4945658]
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Redox-basierte resistive Speicherzellen
GIT 4, 44-46 (2016)
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Hydroxyl Defect Effect on Reoxidation of Sc-Doped (Ba,Ca)(Ti,Zr)O 3 Fired in Reducing Atmospheres
Journal of the American Ceramic Society 99(4), 1311 - 1317 (2016) [10.1111/jace.14092]
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Synthesis of nitrogen and lanthanum codoped barium titanate with a novel thermal ammonolysis reactor
Journal of the European Ceramic Society 36(11), 2719 - 2725 (2016) [10.1016/j.jeurceramsoc.2016.03.033]
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Verification of redox-processes as switching and retention failure mechanisms in Nb:SrTiO 3 /metal devices
Nanoscale 8(29), 13967-13975 (2016) [10.1039/C6NR00824K]
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Realization of Minimum and Maximum Gate Function in Ta$_{2}$O$_{5}$-based Memristive Devices
Scientific reports 6, 23967 - (2016) [10.1038/srep23967]
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Direct electro-optical pumping for hybrid CdSe nanocrystal/III-nitride based nano-light-emitting diodes
Applied physics letters 108(6), 061107 - (2016) [10.1063/1.4941923]
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Pr x Ba 1-x CoO 3 Oxide Electrodes for Oxygen Evolution Reaction in Alkaline Solutions by Chemical Solution Deposition
Journal of the Electrochemical Society 163(3), F166 - F170 (2016) [10.1149/2.0311603jes]
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Nanoscale cation motion in TaO$_{x}$, HfO$_{x}$ and TiO$_{x}$ memristive systems
Nature nanotechnology 11, 67-74 (2016) [10.1038/nnano.2015.221]
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Nanoionic Resistive Switching Memories: On the Physical Nature of the Dynamic Reset Process
Advanced Electronic Materials 2(1), n/a - n/a (2016) [10.1002/aelm.201500233]
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Dependence of the SET switching variability on the initial state in HfO x -based ReRAM
Physica status solidi / A 213(3), 316-319 (2015) [10.1002/pssa.201532375]
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A HfO 2 -Based Complementary Switching Crossbar Adder
Advanced Electronic Materials 1(10), n/a - n/a (2015) [10.1002/aelm.201500138]
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Physics of the Switching Kinetics in Resistive Memories
Advanced functional materials 25(40), 6306 - 6325 (2015) [10.1002/adfm.201500825]
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Distribution of Pd clusters on ultrathin, epitaxial TiO x films on Pt 3 Ti(111)
Beilstein journal of nanotechnology 6, 2007 - 2014 (2015) [10.3762/bjnano.6.204]
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Structure Determination of Au on Pt(111) Surface: LEED, STM and DFT Study
Materials 8(6), 2935 - 2952 (2015) [10.3390/ma8062935]
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Neuartige, lernfähige Memristor-Logik: Big Data ohne Energiekollaps
Physik in unserer Zeit 46, 84 (2015)
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Complex behaviour of vacancy point-defects in SrRuO 3 thin films
Physical chemistry, chemical physics 17(2), 1060 - 1069 (2015) [10.1039/C4CP03632H]
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In situ optical characterization of LaAlO 3 epitaxy on SrTiO 3 (001)
epl 109(3), 37006 (2015) [10.1209/0295-5075/109/37006]
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Erratum: In situ optical characterization of LaAlO 3 epitaxy on SrTiO 3 (001)
epl 109(5), 59902 (2015) [10.1209/0295-5075/109/59902]
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X-ray absorption and resonant photoemission studies of electroforming process in Fe-doped SrTiO 3 epitaxial films
X-ray spectrometry 44(5), 339 - 343 (2015) [10.1002/xrs.2637]
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Graphene-Modified Interface Controls Transition from VCM to ECM Switching Modes in Ta/TaO x Based Memristive Devices
Advanced materials 27(40), 6202 - 6207 (2015) [10.1002/adma.201502574]
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Avalanche-Discharge-Induced Electrical Forming in Tantalum Oxide-Based Metal-Insulator-Metal Structures
Advanced functional materials 25(46), 7154–7162 (2015) [10.1002/adfm.201502767]
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Study of Memristive Associative Capacitive Networks for CAM Applications
IEEE journal on emerging and selected topics in circuits and systems 5(2), 153 - 161 (2015) [10.1109/JETCAS.2015.2426491]
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Phase-Change and Redox-Based Resistive Switching Memories
Proceedings of the IEEE 103(8), 1274 - 1288 (2015) [10.1109/JPROC.2015.2433311]
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Understanding filamentary growth in electrochemical metallization memory cells using kinetic Monte Carlo simulations
Nanoscale 7(29), 12673 - 12681 (2015) [10.1039/C5NR02258D]
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Processes and Limitations during Filament Formation and Dissolution in GeS $_{x}$ -based ReRAM Memory Cells
The journal of physical chemistry <Washington, DC> / C 119(32), 18678 - 18685 (2015) [10.1021/acs.jpcc.5b03622]
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Redox Reactions at Cu,Ag/Ta $_{2}$ O $_{5}$ Interfaces and the Effects of Ta $_{2}$ O $_{5}$ Film Density on the Forming Process in Atomic Switch Structures
Advanced functional materials 25(40), 6374 - 6381 (2015) [10.1002/adfm.201500853]
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Resistively Switching Chalcogenides
Advanced functional materials 25(40), 6285 - 6286 (2015) [10.1002/adfm.201503288]
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Polydiacetylene stabilized gold nanoparticles – extraordinary high stability and integration into a nanoelectrode device
RSC Advances 5(125), 102981 - 102992 (2015) [10.1039/C5RA17545C]
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Resistive Switching of a Quasi-Homogeneous Distribution of Filaments Generated at Heat-Treated TiO $_{2}$ (110)-Surfaces
Advanced functional materials 25(40), 6382 - 6389 (2015) [10.1002/adfm.201500855]
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Impact of cation stoichiometry on the early stage of growth of SrTiO3 deposited by pulsed laser deposition
Applied surface science 359, 68 - 72 (2015) [10.1016/j.apsusc.2015.10.072]
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Resistive Switching of Individual, Chemically Synthesized TiO $_{2}$ Nanoparticles
Small 11(48), 6444–6456 (2015) [10.1002/smll.201502100]
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Formation and Movement of Cationic Defects During Forming and Resistive Switching in SrTiO $_{3}$ Thin Film Devices
Advanced functional materials 25(40), 6360 - 6368 (2015) [10.1002/adfm.201500851]
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Realization of Boolean Logic Functionality Using Redox-Based Memristive Devices
Advanced functional materials 25(40), 6414 - 6423 (2015) [10.1002/adfm.201500865]
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Spectromicroscopic insights for rational design of redox-based memristive devices
Nature Communications 6, 8610 - (2015) [10.1038/ncomms9610]
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Low-current operations in 4F $^{2}$ -compatible Ta $_{2}$ O $_{5}$ -based complementary resistive switches
Nanotechnology 26(41), 415202 - (2015) [10.1088/0957-4484/26/41/415202]
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Interfacial and intermolecular interactions determining the rotational orientation of C60 adsorbed on Au(111)
Surface science 642, 11 - 15 (2015) [10.1016/j.susc.2015.07.025]
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Surface Termination Conversion during SrTiO$_{3}$ Thin Film Growth Revealed by X-ray Photoelectron Spectroscopy
Scientific reports 5, 11829 - (2015) [10.1038/srep11829]
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The influence of the local oxygen vacancy concentration on the piezoresponse of strontium titanate thin films
Nanoscale 7(34), 14351-14357 (2015) [10.1039/C5NR03643G]
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Enhanced fullerene–Au(111) coupling in (2√3 × 2√3)R30° superstructures with intermolecular interactions
Beilstein journal of nanotechnology 6, 1421 - 1431 (2015) [10.3762/bjnano.6.147]
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Poole-Frenkel-effect as dominating current mechanism in thin oxide films—An illusion?!
Journal of applied physics 117(21), 215103 - (2015) [10.1063/1.4921949]
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Impact of the cation-stoichiometry on the resistive switching and data retention of SrTiO$_{3}$ thin films
AIP Advances 5(4), 047150 - (2015) [10.1063/1.4919697]
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A Complementary Resistive Switch-Based Crossbar Array Adder
IEEE journal on emerging and selected topics in circuits and systems 5, 64 - 74 (2015) [10.1109/JETCAS.2015.2398217]
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Impedance spectroscopy study of the unipolar and bipolar resistive switching states of atomic layer deposited polycrystalline ZrO $_{2}$ thin films
Physica status solidi / A 212(4), 751 - 766 (2015) [10.1002/pssa.201431489]
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Understanding the conductive channel evolution in Na:WO $_{3−x}$ -based planar devices
Nanoscale 7(14), 6023 - 6030 (2015) [10.1039/C4NR07545E]
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Effect of RESET Voltage on Distribution of SET Switching Time of Bipolar Resistive Switching in a Tantalum Oxide Thin Film
IEEE transactions on electron devices 62(5), 1561 - 1567 (2015) [10.1109/TED.2015.2411748]
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Modeling of Quantized Conductance Effects in Electrochemical Metallization Cells
IEEE transactions on nanotechnology 14(3), 505 - 512 (2015) [10.1109/TNANO.2015.2411774]
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Atomic structure and chemistry of dislocation cores at low-angle tilt grain boundary in SrTiO3 bicrystals
Acta materialia 89, 344 - 351 (2015) [10.1016/j.actamat.2015.02.016]
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Distinct itinerant spin-density waves and local-moment antiferromagnetism in an intermetallic ErPd2Si2 single crystal
Scientific reports 5, 7968 (2015) [10.1038/srep07968]
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Transport limits in defect-engineered LaAlO $_{3}$ /SrTiO $_{3}$ bilayers
Nanoscale 7(3), 1013-1022 (2015) [10.1039/C4NR06272H]
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Low temperature reduction in Ta–O and Nb–O thin films
Journal of physics / D 47(13), 135301 - (2014) [10.1088/0022-3727/47/13/135301]
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Thermal Treatment Effects in PbTiO $_{3}$ Crystals Studied by XPS and Electric Conductivity Tests
Ferroelectrics 466(1), 51 - 62 (2014) [10.1080/00150193.2014.894866]
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Influence of Proton Exchange on LiNbO $_{3}$ Crystals Structure
Ferroelectrics 466(1), 1 - 7 (2014) [10.1080/00150193.2014.894440]
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Redox-Based Resistive Switching Memories (ReRAMs): Electrochemical Systems at the Atomic Scale
ChemElectroChem 1(1), 26 - 36 (2014) [10.1002/celc.201300165]
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Origin of the SET Kinetics of the Resistive Switching in Tantalum Oxide Thin Films
IEEE electron device letters 35(2), 259 - 261 (2014) [10.1109/LED.2013.2294868]
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Determination of the electrostatic potential distribution in Pt/Fe:SrTiO$_{3}$/Nb:SrTiO$_{3}$ thin-film structures by electron holography
Scientific reports 4, 6975 (2014) [10.1038/srep06975]
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Physical origins and suppression of Ag dissolution in GeS x -based ECM cells21
Physical chemistry, chemical physics 16(34), 18217-18225 (2014) [10.1039/C4CP01759E]
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Live demonstration: An associative capacitive network based on nanoscale complementary resistive switches
2014 IEEE International Symposium on Circuits and Systems (ISCAS), Melbourne VICMelbourne VIC, Australia, 1 Jun 2014 - 5 Jun 2014
Circuits and Systems 1, 439 (2014) [10.1109/ISCAS.2014.6865162]
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Impact of the Counter-Electrode Material on Redox Processes in Resistive Switching Memories
ChemElectroChem 1(8), 1287 - 1292 (2014) [10.1002/celc.201402106]
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Atomic Layer Deposition of Transparent VO $_{x}$ Thin Films for Resistive Switching Applications
Chemical vapor deposition 20(7-8-9), 291 - 297 (2014) [10.1002/cvde.201407122]
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Atomic Layer Deposition of TiO x /Al 2 O 3 Bilayer Structures for Resistive Switching Memory Applications
Chemical vapor deposition 20(7-8-9), 282 - 290 (2014) [10.1002/cvde.201407123]
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Chemical solution deposition of ferroelectric yttrium-doped hafnium oxide films on platinum electrodes
Applied physics letters 104(20), 202903 (2014) [10.1063/1.4879283]
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Competing strain relaxation mechanisms in epitaxially grown Pr$_{0.48}$Ca$_{0.52}$MnO$_{3}$ on SrTiO$_{3}$
APL materials 2(10), 106106 (2014) [10.1063/1.4900817]
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Simulation and comparison of two sequential logic-in-memory approaches using a dynamic electrochemical metallization cell model
Microelectronics journal 45(11), 1416 - 1428 (2014) [10.1016/j.mejo.2014.09.012]
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Volatile resistance states in electrochemical metallization cells enabling non-destructive readout of complementary resistive switches
Nanotechnology 25(42), 425202 - (2014) [10.1088/0957-4484/25/42/425202]
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Applicability of Well-Established Memristive Models for Simulations of Resistive Switching Devices
IEEE transactions on circuits and systems / 1 61(8), 2402 - 2410 (2014) [10.1109/TCSI.2014.2332261]
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Nanobattery Effect in RRAMs—Implications on Device Stability and Endurance
IEEE electron device letters 35(2), 208 - 210 (2014) [10.1109/LED.2013.2292113]
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Scanning Tunneling Microscopy Investigation of Ultrathin Titanium Oxide Films Grown on Pt 3 Ti(111)
The journal of physical chemistry <Washington, DC> / C 118(12), 6186 - 6192 (2014) [10.1021/jp4105213]
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Giant electrode effect on tunnelling electroresistance in ferroelectric tunnel junctions
Nature Communications 5, 5414 (2014) [10.1038/ncomms6414]
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Understanding the role of single molecular ZnS precursors in the synthesis of In(Zn)P/ZnS nanocrystals
ACS applied materials & interfaces 6(20), 18233–18242 (2014) [10.1021/am504988j]
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Directed Immobilization of Janus-AuNP in Heterometallic Nanogaps: a Key Step Toward Integration of Functional Molecular Units in Nanoelectronics
The journal of physical chemistry <Washington, DC> / C 118(46), 27142 - 27149 (2014) [10.1021/jp5085179]
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Do dislocations act as atomic autobahns for oxygen in the perovskite oxide SrTiO$_{3}$?
Nanoscale 6(21), 12864 - 12876 (2014) [10.1039/C4NR04083J]
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Spectroscopic Proof of the Correlation between Redox-State and Charge-Carrier Transport at the Interface of Resistively Switching Ti/PCMO Devices
Advanced materials 26(17), 2730 - 2735 (2014) [10.1002/adma.201304054]
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Band alignment at memristive metal-oxide interfaces investigated by hard x-ray photoemission spectroscopy
Physical review / B 90(11), 115312 (2014) [10.1103/PhysRevB.90.115312]
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Fast mapping of inhomogeneities in the popular metallic perovskite Nb:SrTiO 3 by confocal Raman microscopy
Physica status solidi / Rapid research letters 08(09), 781 - 784 (2014) [10.1002/pssr.201409221]
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Insights into Nanoscale Electrochemical Reduction in a Memristive Oxide: the Role of Three-Phase Boundaries
Advanced functional materials 24(28), 4466 - 4472 (2014) [10.1002/adfm.201304233]
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Electrochemical dynamics of nanoscale metallic inclusions in dielectrics
Nature Communications 5, 4232 (2014) [10.1038/ncomms5232]
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Interrelation of Sweep and Pulse Analysis of the SET Process in SrTiO$_3$ Resistive Switching Memories
IEEE electron device letters 1, 1 - 1 (2014) [10.1109/LED.2014.2340016]
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Finite-size versus interface-proximity effects in thin-film epitaxial $SrTiO_3$
Physical review / B 89(24), 241401 (2014) [10.1103/PhysRevB.89.241401]
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Incommensurate antiferromagnetic order in the manifoldly-frustrated SrTb2O4 with transition temperature up to 4.28 K
Frontiers in Physics 2, 42 (2014) [10.3389/fphy.2014.00042]
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Impact of composition and crystallization behavior of atomic layer deposited strontium titanate films on the resistive switching of Pt/STO/TiN devices
Journal of applied physics 116(6), 064503 - (2014) [10.1063/1.4891831]
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Influence of stoichiometry on the performance of MIM capacitors from plasma-assisted ALD Sr x Ti y O z films
Physica status solidi / A 211(2), 389 - 396 (2014) [10.1002/pssa.201330101]
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Study of atomic layer deposited ZrO 2 and ZrO 2 /TiO 2 films for resistive switching application
Physica status solidi / A 211(2), 301 - 309 (2014) [10.1002/pssa.201330034]
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Differential Adsorption of Gold Nanoparticles to Gold/Palladium and Platinum Surfaces
Langmuir 30(2), 574 - 583 (2014) [10.1021/la404110y]
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On the SET/RESET current asymmetry in electrochemical metallization memory cells
Physica status solidi / Rapid research letters 2, n/a - n/a (2014) [10.1002/pssr.201308310]
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Impact of the interplay between nonstoichiometry and kinetic energy of the plume species on the growth mode of SrTiO 3 thin films
Journal of physics / D 47(3), 034009 - (2014) [10.1088/0022-3727/47/3/034009]
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BiFeO $_{3}$ single crystal as resistive switching element for application in microelectronic devices
Phase transitions 86(2-3), 284 - 289 (2013) [10.1080/01411594.2012.727262]
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Nucleation and growth phenomena in nanosized electrochemical systems for resistive switching memories
Journal of solid state electrochemistry 17(2), 365 - 371 (2013) [10.1007/s10008-012-1890-5]
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Cation-based resistance change memory
Journal of physics / D 46(7), 074005 - (2013) [10.1088/0022-3727/46/7/074005]
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Peculiar size effect in nanocrystalline BaTiO$_{3}$
Acta materialia 61(5), 1748 - 1756 (2013) [10.1016/j.actamat.2012.11.049]
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Thermal hysteresis of local instabilities in paraelectric phase of PbZr$_{0.96}$Sn$_{0.04}$ O$_{3}$ single crystals
Journal of applied physics 113(18), 187209 - (2013) [10.1063/1.4801980]
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Comment on “Dynamic Processes of Resistive Switching in Metallic Filament-Based Organic Memory Devices”
The journal of physical chemistry <Washington, DC> / C 117(22), 11878 - 11880 (2013) [10.1021/jp4014306]
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Compact modeling of CRS devices based on ECM cells for memory, logic and neuromorphic applications
Nanotechnology 24(38), 384008 - (2013) [10.1088/0957-4484/24/38/384008]
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Current Compliance-Dependent Nonlinearity in ${\rm TiO}_{2}$ ReRAM
IEEE electron device letters 34(8), 996 - 998 (2013) [10.1109/LED.2013.2265715]
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Surface deformations as a necessary requirement for resistance switching at the surface of SrTiO $_{3}$ :N
Nanotechnology 24(47), 475701 - (2013) [10.1088/0957-4484/24/47/475701]
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Ag/GeSx/Pt-based complementary resistive switches for hybrid CMOS/Nanoelectronic logic and memory architectures
Scientific reports 3, 2856 (2013) [10.1038/srep02856]
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Structural and compositional characterization of ultrathin titanium oxide films grown on Pt 3 Ti(111)
Journal of physics / Condensed matter 25(4), 045013 - (2013) [10.1088/0953-8984/25/4/045013]
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[Zr(NEtMe) 2 (guan-NEtMe) 2 ] as a Novel Atomic Layer Deposition Precursor: ZrO 2 Film Growth and Mechanistic Studies
Chemistry of materials 25(15), 3088 - 3095 (2013) [10.1021/cm401279v]
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Nanobattery effect in RRAMs-implications on device stability and endurance
IEEE electron device letters 35, 208 (2013)
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Generic Relevance of Counter Charges for Cation-Based Nanoscale Resistive Switching Memories
ACS nano 7(7), 6396 - 6402 (2013) [10.1021/nn4026614]
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Growth and Crystallization of TiO 2 Thin Films by Atomic Layer Deposition Using a Novel Amido Guanidinate Titanium Source and Tetrakis-dimethylamido-titanium
Chemistry of materials 25(15), 2934 - 2943 (2013) [10.1021/cm303703r]
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Analytical analysis of the generic SET and RESET characteristics of electrochemical metallization memory cells
Nanoscale 5(22), 11003 - (2013) [10.1039/c3nr03387b]
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X-ray absorption and resonant photoemission studies of Mn doped SrTiO3 epitaxial films
Radiation physics and chemistry 93, 123 - 128 (2013) [10.1016/j.radphyschem.2012.11.009]
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Electrical Characterization of 4-Mercaptophenylamine-Capped Nanoparticles in a Heterometallic Nanoelectrode Gap
The journal of physical chemistry <Washington, DC> / C 117(42), 22002 - 22009 (2013) [10.1021/jp405990y]
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Tuning cationic composition of La:EuTiO3−δ films
APL materials 1, 052111 (2013) [10.1063/1.4831856]
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Bipolar switching polarity reversal by electrolyte layer sequence in electrochemical metallization cells with dual-layer solid electrolytes
Nanoscale 5(24), 12598 - (2013) [10.1039/c3nr03993e]
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Effect of resistive switching and electrically driven insulator-conductor transition in PbZrO $_{3}$ single crystals
Physica status solidi / A 210(3), 507 - 512 (2013) [10.1002/pssa.201228586]
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Systematic chemical functionalization of hybrid molecule-surface interfaces
Physica status solidi / B 250(11), 2267-2274 (2013) [10.1002/pssb.201349076]
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In situ observation of filamentary conducting channels in an asymmetric Ta2O5−x/TaO2−x bilayer structure
Nature Communications 4, 2382 (2013) [10.1038/ncomms3382]
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Inhomogeneity of donor doping in SrTiO3 substrates studied by fluorescence-lifetime imaging microscopy
Applied physics letters 103(16), 162904 - (2013) [10.1063/1.4825367]
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Cluster-like resistive switching of SrTiO 3 :Nb surface layers
New journal of physics 15(10), 103017 - (2013) [10.1088/1367-2630/15/10/103017]
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Evidence for multifilamentary valence changes in resistive switching SrTiO3 devices detected by transmission X-ray microscopy
Applied physics letters 1(4), 042102 (2013) [10.1063/1.4822438]
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Proton defects in BaTiO3: New aspects regarding the re-oxidation of dielectric materials fired in reducing atmospheres
Journal of the European Ceramic Society 33(15-16), 3007 - 3013 (2013) [10.1016/j.jeurceramsoc.2013.05.027]
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Rate limiting step for the switching kinetics in Cu doped Ge0.3Se0.7 based memory devices with symmetrical and asymmetrical electrodes
Journal of applied physics 113(12), 124504 - (2013) [10.1063/1.4797488]
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Structure and thermoelectric properties of EuTi(O,N)3 ± δ
Journal of applied physics 114(3), 033701 - (2013) [10.1063/1.4813098]
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Uniform Complementary Resistive Switching in Tantalum Oxide Using Current Sweeps
IEEE electron device letters 34(1), 114 - 116 (2013) [10.1109/LED.2012.2224634]
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Preparation and characterization of GeSx thin-films for resistive switching memories
Thin solid films 527, 299 - 302 (2013) [10.1016/j.tsf.2012.12.032]
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Bond nature of active metal ions in SiO2-based electrochemical metallization memory cells
Nanoscale 5(5), 1781-1784 (2013) [10.1039/c3nr34148h]
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Switching kinetics of electrochemical metallization memory cells
Physical chemistry, chemical physics 15(18), 6945-6952 (2013) [10.1039/c3cp50738f]
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An associative capacitive network based on nanoscale complementary resistive switches for memory-intensive computing
Nanoscale 5(11), 5119 - (2013) [10.1039/c3nr00535f]
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Comment on Real-Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide-Electrolyte- Based ReRAM
Advanced materials 25(2), 162 - 164 (2013) [10.1002/adma.201202592]
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Chemically-inactive interfaces in thin film Ag/AgI systems for resistive switching memories
Scientific reports 3, 1169 (2013) [10.1038/srep01169]
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Dysprosium-Doped (Ba,Sr)TiO 3 Thin Films on Nickel Foilsfor Capacitor Applications
Journal of the American Ceramic Society 96(4), 1228 - 1233 (2013) [10.1111/jace.12182]
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Rate-limiting processes in the fast SET operation of a gapless-type Cu-Ta2O5 atomic switch
AIP Advances 3(3), 032114 - (2013) [10.1063/1.4795140]
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Resistive switching near electrode interfaces: Estimations by a current model
Journal of applied physics 113(5), 053716 - (2013) [10.1063/1.4789944]
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Structural stratification of Sr 1 − x Ca x RuO 3 thin films: Influence of aging process
Physica status solidi / A 210(2), 239 - 254 (2013) [10.1002/pssa.201228217]
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Memory cell based on a varphi Josephson junction
Applied physics letters 102, 242602 (2013) [10.1063/1.4811752]
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Nonstoichiometry accommodation in SrTiO_{3} thin films studied by positron annihilation and electron microscopy
Physical review / B 87(19), 195409 (2013) [10.1103/PhysRevB.87.195409]
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Chemical insight into electroforming of resistive switching manganite heterostructures
Nanoscale 5(9), 3954 - (2013) [10.1039/c3nr00106g]
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Identification of screw dislocations as fast-forming sites in Fe-doped SrTiO3
Applied physics letters 102(18), 183504 - (2013) [10.1063/1.4804364]
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Grain growth and crystallinity of ultrafine barium titanate particles prepared by various routes
Ceramics international 39(6), 6673 - 6680 (2013) [10.1016/j.ceramint.2013.01.105]
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Detection of Fe2+ valence states in Fe doped SrTiO3 epitaxial thin films grown by pulsed laser deposition
Physical chemistry, chemical physics 15(21), 8311 - 8317 (2013) [10.1039/c3cp50272d]
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Nanobatteries in redox-based resistive switches require extension of memristor theory
Nature Communications 4, 1771 - (2013) [10.1038/ncomms2784]
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Quasi-two-dimensional conducting layer on TiO2 (110) introduced by sputtering as a template for resistive switching
Applied physics letters 102(13), 131604 - (2013) [10.1063/1.4801437]
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Atomic-scale measurement of structure and chemistry of a single-unit-cell layer of LaAlO3 embedded in SrTiO3
Microscopy and microanalysis 19(2), 310-318 (2013) [10.1017/S1431927612014407]
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Insulator-to-metal transition of SrTiO3: Nb single crystal surfaces inducedby Ar+bombardment
Applied physics letters 102(10), 101603 (2013) [10.1063/1.4795611]
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Electro-degradation and resisive switching of Fe-doped SrTiO3 single crystal
Journal of applied physics 113(8), 083713 (2013) [10.1063/1.4793632]
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Feasibility studies for filament detection in resistively switching SrTiO3 devices by employing grazing incidence small angle X-ray scattering
Journal of applied physics 113(6), 064509 (2013) [10.1063/1.4792035]
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Stoichiometry dependence and thermal stability of conducting NdGaO3/SrTiO3 heterointerfaces
Applied physics letters 102(7), 071601 (2013) [10.1063/1.4792509]
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Memristors: Devices, Models, and Applications [Scanning the Issue]
Proceedings of the IEEE 100(6), 1911 - 1919 (2012) [10.1109/JPROC.2012.2190812]
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Metal–insulator transition induced by non-stoichiometry of surface layer and molecular reactions on single crystal KTaO$_{3}$
Surface science 606(15-16), 1252 - 1262 (2012) [10.1016/j.susc.2012.04.005]
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Roles of Schottky barrier and oxygen vacancies in the electroforming of SrTiO$_{3}$
Applied physics reviews 101(15), 152903 - (2012) [10.1063/1.4759030]
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Precursor dynamics to the structural instability in SrTiO $_{3}$
Phase transitions 85(11), 939 - 948 (2012) [10.1080/01411594.2012.699051]
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Effect of TiO2 doped Ni electrodes on the dielectric properties and microstructures of (Ba$_{0.96}$Ca$_{0.04}$)(Ti$_{0.85}$Zr$_{0.15}$)O$_{3}$ multilayer ceramic capacitors
Journal of the European Ceramic Society 32(4), 865 - 873 (2012) [10.1016/j.jeurceramsoc.2011.11.009]
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Probing the oxygen vacancy distribution in resistive switching Fe-SrTiO3 metal-insulator-metal-structures by micro-x ray absorption near-edge structure
Journal of applied physics 111(7), 076101 - (2012) [10.1063/1.3699315]
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Detection of filament formation in forming-free resistive switching SrTiO3 devices with Ti top electrodes
Applied physics letters 100(22), 223503 - (2012) [10.1063/1.4724108]
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Beyond von Neumann—logic operations in passive crossbar arrays alongside memory operations
Nanotechnology 23(30), 305205 - (2012) [10.1088/0957-4484/23/30/305205]
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Direct Observation of Charge Transfer in Solid Electrolyte for Electrochemical Metallization Memory
Advanced materials 24(33), 4552 - 4556 (2012) [10.1002/adma.201201499]
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Redox-Based Resistive Switching Memories
Journal of nanoscience and nanotechnology 12(10), 7628 - 7640 (2012) [10.1166/jnn.2012.6652]
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Molecular dynamics simulations of oxygen vacancy diffusion in SrTiO 3
Journal of physics / Condensed matter 24(48), 485002 - (2012) [10.1088/0953-8984/24/48/485002]
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Electrical Transport through Single Nanoparticles and Nanoparticle Arrays
The journal of physical chemistry <Washington, DC> / C 116(39), 20657 - 20665 (2012) [10.1021/jp3020029]
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Pulsed laser ablation of complex oxides: The role of congruent ablation and preferential scattering for the film stoichiometry
Applied physics letters 101, 131601 (2012) [10.1063/1.4754112]
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Possible magnetic-polaron-switched positive and negative magnetoresistance in the GdSi single crystals
Scientific Reports 2(Art. No.750), (2012) [10.1038/srep00750]
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An Electronic Version of Pavlov's Dog
Advanced functional materials 22, 2744 - 2749 (2012) [10.1002/adfm.201200244]
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Experimental evidence of a phi-Josephson Junction
Physical review letters 109, 107002 (2012) [10.1103/PhysRevLett.109.107002]
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Simulation of multilevel switching in electrochemical metallization memory cells
Journal of applied physics 111, 014501 (2012) [10.1063/1.3673239]
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Atomically controlled electrochemical nucleation at superionic solid electrolyte surfaces
Nature materials 11, 530–535 (2012) [10.1038/nmat3307]
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Scaling Potential of Local Redox Processes in Memristive SrTiO _{3} Thin-Film Devices
Proceedings of the IEEE 100, 1979 - 1990 (2012) [10.1109/JPROC.2012.2188771]
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Quantum conductance and switching kinetics of Agl based microcrossbar cells
Nanotechnology 23, 5703 (2012) [10.1088/0957-4484/23/14/145703]
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Nanoionic transport and electrochemical reactions in resistively switching siicon dioxide
Nanoscale 4, 3040 - 3043 (2012) [10.1039/c2nr30413a]
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Properties of TaSiN thin films deposited by reactive radio frequency magnetron sputtering
Thin solid films 520, 4497 - 4500 (2012) [10.1016/j.tsf.2012.02.068]
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Metallic electrolyte composites in the framework of the brick-layer model
Journal of the European Ceramic Society 32, 859 - 864 (2012) [10.1016/j.jeurceramsoc.2011.10.017]
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Reliable fabrication of 3 nm gaps between nanoelectrodes by electron-beam lithography
Nanotechnology 23, 125302 (2012) [10.1088/0957-4484/23/12/125302]
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Influence of charge compensation mechanisms on the sheet electron density at conducting LaAlO3/SrTiO3-interfaces
Applied physics letters 100, 052103 (2012) [10.1063/1.3679139]
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Spatial resolution and radiation damage in quantitative high-resolution STEM-EEL spectroscopy in oxides
Micron 43, 532 - 537 (2012) [10.1016/j.micron.2011.10.006]
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Electrochemical metallization cells - blending nanoionics into nanoelectronics?
Materials research bulletin 37, 124 - 127 (2012) [10.1557/mrs.2012.38]
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Columnar self-assembly of a 3D-persulfurated coronene asterisk. The dominant role of Aryl-Sulfur bonds
New journal of chemistry 36, 477 - 483 (2012) [10.1039/c1nj20472f]
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Arylthio-substituted coronenes as tailored building blocks for molecular electronics
Physical Chemistry Chemical Physics 14, 1635 - 1641 (2012) [10.1039/c2cp23241c]
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Effects of Moisture on the Switching Characteristics of Oxide-Based, Gapless-Type Atomic Switches
...
Advanced functional materials 22, 70 -77 (2012) [10.1002/adfm.201101846]
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Piezoelectric actuated MEMS for use in microwave switching and filtering applications
Physica status solidi / A 208(2), 343 - 356 (2011) [10.1002/pssa.201100004]
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High Growth Rate in Atomic Layer Deposition of TiO$_{2}$ thin films by UV Irradiation
Electrochemical and solid-state letters 14(4), H146 - (2011) [10.1149/1.3534833]
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The thermal stability of Pt/Ir coated AFM tips for resistive switching measurements
Applied surface science 257(17), 7627 - 7632 (2011) [10.1016/j.apsusc.2011.03.149]
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Materials, technologies, and circuit concepts for nanocrossbar-based bipolar RRAM
Applied physics / A 102, S1 791 - 809 (2011) [10.1007/s00339-011-6287-2]
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Modeling complementary resistive switches by nonlinear memristive systems
Proceedings of the IEEE 11, 474 - 1478 (2011)
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Identifying Molecular Orbital Energies by Distance-Dependent Transition Voltage Spectroscopy
The journal of physical chemistry <Washington, DC> / C 115, 15025 - 15030 (2011) [10.1021/jp204240n]
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Single Electron Tunneling through a Tailored Arylthio-coronene
The journal of physical chemistry <Washington, DC> / C 115, 9204 - 9209 (2011) [10.1021/jp2018007]
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Electrochemical metallization memories-fundamentals, applications, prospects
Nanotechnology 22, 254003 (2011) [10.1088/0957-4484/22/25/254003]
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Electrochemical activation of molecular nitrogen at the Ir/YSZ interface
Physical Chemistry Chemical Physics 13, 3394 - 3410 (2011) [10.1039/c0cp01024c]
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Proton Mobility in SiO2 Thin Films and Impact of Hydrogen and Humidity on the Resistive Switching Effect
MRS online proceedings library 1330, (2011) [10.1557/opl.2011.1198]
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Capacity based nondestructive readout for complementary resistive switches
Nanotechnology 22, 395203 (2011) [10.1088/0957-4484/22/39/395203]
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Redox Processes in Silicon Dioxide Thin Films using Copper Microelectrodes
Applied physics letters 99, 203103 (2011) [10.1063/1.3662013]
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An EMF cell with a nitrogen solid electrolyte - on the transference of nitrogen ions in yttria-stabilized zirconia
Physical Chemistry Chemical Physics 13, 1239 - 1242 (2011) [10.1039/c003991h]
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Relation between enhancement in growth and thickness-dependent crystallization in ALD TiO2 thin films
Journal of the Electrochemical Society 158, D6 - D9 (2011) [10.1149/1.3507258]
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Origin of the ultra-nonlinear switching kinetics in oxide-based resistive switches
Advanced functional materials 21, 4487 - 4492 (2011) [10.1002/adfm.201101117]
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Spectroscopic study of the electric field induced valence change of Fe-defect centers in SrTiO(3)
Physical Chemistry Chemical Physics 13, 20779 - 20786 (2011) [10.1039/c1cp21973a]
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Complementary resistive switches (CRS): High speed performance for the application in passive nanocrossbar arrays
MRS online proceedings library 1337, 43 (2011)
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PbTiO3 nanoparticle precursors for chemical solution deposited electroceramic thin films
Journal of sol gel science and technology 57, 36 - 42 (2011) [10.1007/s10971-010-2321-7]
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Synthesis, spark plasma sintering and electrical conduction mechanism in BaTi3-Cu composites
Journal of the European Ceramic Society 31, 773 - 782 (2011) [10.1016/j.jeurceramsoc.2010.11.012]
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Dihydroxy (4-thiomorpholinomethyl) benzoic acids - From molecular asymmetry to diode characteristics
Langmuir 27, (2011) [10.1021/la201206e]
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NHC-based self-asssembled monolayers on solid gold substrates
Australian journal of chemistry 64, 1177 (2011) [10.1071/CH11173]
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Integration of perovskite oxide dielectrics into complementary metal-oxide-semiconductor capacitor structures using amorphous TaSiN as oxygen diffusion barrier
Journal of applied physics 110, 064117 (2011) [10.1063/1.3641636]
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Comment on "Exponential ionic drift: fast switching and low volatility of thin-film memristors" by D.B. Strukov and R.S. Williams in Appl. Phys. A (2009) 94:515-519
Applied physics / A 105, (2011) [10.1007/s00339-011-6578-7]
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On the stochastic nature of resistive switching in Cu doped Ge0.3Se0.7 based memory devices
Journal of applied physics 110, 054509 (2011) [10.1063/1.3631013]
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Forming-free TiO2-based resistive switching devices on CMOS-compatible W-plugs
IEEE Electron Device Letters 32, 1588 - 1590 (2011) [10.1109/LED.2011.2166371]
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Analysis of transient currents during ultrafast switching of TiO2 nanocrossbar devices
IEEE Electron Device Letters 32, 1116 - 1118 (2011) [10.1109/LED.2011.2156377]
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Can we achieve significantly higher ionic conductivity in nanostructured zirconia?
Scripta materialia 65, 96 - 101 (2011) [10.1016/j.scriptamat.2010.09.019]
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Crossbar logic using bipolar and complementary resistive switches
IEEE Electron Device Letters 32, 710 - 712 (2011) [10.1109/LED.2011.2127439]
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Thermochemical resistive switching: materials, mechanisms, and scaling projections
Phase transitions 84, 570 - 602 (2011) [10.1080/01411594.2011.561478]
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Memristive switches with two switching polarities in a forming free device structure
MRS online proceedings library 1337, mrss11-1337-q08-03 (2011) [10.1557/opl.2011.858]
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Nanocomposite thin films for miniaturized multi-ayer ceramic capacitors prepared from barium titanate nanoparticle based hybrid solutions
Journal of materials chemistry 21, 7953 - 7965 (2011) [10.1039/c1jm10607d]
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Spark plasma sintering of nanocrystalline BaTiO3-powders: Consolidation behavior and dielectric characteristics
Journal of the European Ceramic Society 31, 1723 - 1731 (2011) [10.1016/j.jeurceramsoc.2011.03.035]
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TiO2-a prototypical memristive material
Nanotechnology 22, 1 - 21 (2011) [10.1088/0957-4484/22/25/254001]
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Electronic structure of epitaxial Fe-doped SrTiO3 thin films
Phase transitions 84, (2011) [10.1080/01411594.2010.551806]
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Local conductivity of epitaxial Fe-doped SrTiO3 thin films
Phase transitions 84, (2011) [10.1080/01411594.2010.551751]
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Bipolar resistive switching in oxides: mechanisms and scaling
Current applied physics 11, E75 - E78 (2011) [10.1016/j.cap.2010.10.022]
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Integrated complementary resistive switches for passive high-density nanocrossbar arrays
IEEE Electron Device Letters 32, 191 - 193 (2011) [10.1109/LED.2010.2090127]
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Fine tuning of the electronic structure of n-conjugated molecules for molecular electronics
Nanotechnology 22, 145701 (2011) [10.1088/0957-4484/22/14/145701]
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Electroforming and Resistance Switching Characteristics of Silver-Doped MSQ With Inert Electrodes
IEEE transactions on applied superconductivity 10, 338 - 343 (2011) [10.1109/TNANO.2010.2041669]
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Resistive switching and changes in microstructure
Physica status solidi / A 208, 300 - 316 (2011) [10.1002/pssa.201026743]
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Die kleinsten Bits der Welt
Spektrum der Wissenschaft 1, 86 - 95 (2011)
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Nanostructured resistive memory cells based on 8-nm-thin TiO2 films deposited by atomic layer deposition
Journal of vacuum science & technology / A 29, 01AD01 (2011) [10.1116/1.3536487]
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Control Molecule-based Transport for Future Molecular Devices
Journal of physics / Condensed matter 23, 013001 (2011) [10.1088/0953-8984/23/1/013001]
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Memory Devices: Energy–Space–Time Tradeoffs
Proceedings of the IEEE 98(12), 2185 - 2200 (2010) [10.1109/JPROC.2010.2064271]
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Correlation between growth kinetics and nanoscale resistive switching properties of SrTiO3 thin films
Journal of applied physics 108, 124504 (2010) [10.1063/1.3520674]
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Electronic conduction mechanisms in BaTiO3-Ni composites with ultrafine microstructure
Journal of the American Ceramic Society 93, 4075 - 4080 (2010) [10.1111/j.1551-2916.2010.04011.x]
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The role of defects in resistively switching chalcogenides
International journal of materials research 101, 182 - 198 (2010) [10.3139/146.100276]
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Observation of unipolar resistance switching in silver doped methyl-silsesquioxane
Microelectronic engineering 87, (2010) [10.1016/j.mee.2009.11.034]
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Comments on the processing of the niobium omponent for chemical solution derived niobium oxide-based thin films
Journal of sol gel science and technology 56, 236 - 243 (2010) [10.1007/s10971-010-2299-1]
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Ferroelectric field effect transistors using very thin ferroelectric polyvinylidene fluoride copolymer films as gate dielectrics
Journal of applied physics 107, 124119 (2010) [10.1063/1.3437638]
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Formation sequence of lead platinum interfacial phases in chemical solution deposition derived Pb(Zr1-xTix)O-3 thin films
Chemistry of materials 22, 6209 - 6211 (2010) [10.1021/cm101195t]
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Compositional substitutions and aliovalent doping of BaTiO3-based thin films on Nickel foils prepared by chemical solutiion deposition
Journal of the American Chemical Society 93, 506 - 515 (2010) [10.1111/j.1551-2916.2009.03422.x]
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Identification of A- and B-site cation vacancy defects in perovskite oxide thin films
Physical review letters 105, 226102 (2010) [10.1103/PhysRevLett.105.226102]
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Coexistence of filamentary and homogeneous switching in Fe-doped SrTiO3 thin film memristive devices
Advanced materials 22, 4819 - 4822 (2010) [10.1002/adma.201001872]
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SrTiO3 ultra thin film capacitors on silicon substrates with significant interfacial passive layers
Applied physics letters 97, 132907 (2010) [10.1063/1.3495990]
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Electronic transport properties of individual 4,4'-bis(mercaptoalkyl)-biphenyl derivatives measured in STM-based break junctions
Physical Chemistry Chemical Physics 12, 10518 - 10524 (2010) [10.1039/c004245e]
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Evidence for triplet superconductivity in Josephson junctions with ferromagnetic Cu2MnAl-Heusler barriers
Physical review / B 82(6), 060505 (2010) [10.1103/PhysRevB.82.060505]
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Critical current diffraction pattern of SIFS Josephson junctions with a step-like F-layer
Superconductor science and technology 23, 095007 (2010) [10.1088/0953-2048/23/9/095007]
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Electronic Mapping of Molecular Orbitals at the Molecule-Metal Interface
Physical review letters 105, 066801 (2010) [10.1103/PhysRevLett.105.066801]
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High temperature conductance characteristics of LaAlO3/SrTiO3-heterostructures under equilibrium oxygen atmospheres
Applied physics letters 97, 012103 (2010) [10.1063/1.3457386]
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Function by defects at the atomic scale - New concepts for non-volatile memories
Solid state electronics 54, 830 - 840 (2010) [10.1016/j.sse.2010.04.043]
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Interference patterns of multfacet 20x (0-pi) Josephson junctions with ferromagnetic barrier
Physical review / B 81(17), 174535 (2010) [10.1103/PhysRevB.81.174535]
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Reversible alternation between bipolar and unipolar resistive switching in polycrystalline barium strontium titanate thin films
Journal of applied physics 107, 094506 (2010) [10.1063/1.3369285]
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Soft x-ray resonant scattering study of single-crystal LaSr2Mn2O7
The European physical journal / B 74, 457 - 461 (2010) [10.1140/epjb/e2010-00117-3]
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Complementary resistive switches for passive nanocrossbar memories Published online: 18 April 2010
Nature materials 9, 403 - 406 (2010) [10.1038/nmat2748]
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Josephson supercurrent in Nb/InN-nanowire/Nb junctions
Applied physics letters 96, 132504 (2010) [10.1063/1.3377897]
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Investigation of the electroforming process in resistively switching TiO_2 nanocrosspoint junctions
Applied physics letters 96, 122902 (2010) [10.1063/1.3367752]
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Magnetic interference patterns in 0-pi superconductor/insulator/ferromagnet/superconductor Josephson junctions: Effects of asymmetry between 0 and pi regions
Physical review / B 81(5), 054522 (2010) [10.1103/PhysRevB.81.054522]
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Visualizing supercurrents in ferromagnetic Josephson junctions with various arrangements of 0 and pi segments
Physical review / B 81(9), 094502 (2010) [10.1103/PhysRevB.81.094502]
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Probing Cu doped Ge_0.3Se_0.7 based resistance switching memory devices with random telegraph noise
Journal of applied physics 107, 024517 - 024527 (2010) [10.1063/1.3291132]
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Voltage-time dilemma of pure electronic mechanisms in resistive switching memory cells
Journal of applied physics 107, 054517 (2010) [10.1063/1.3319591]
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Impact of defect distribution on resistive switching characteristics of Sr2tiO4 thin Films
Advanced materials 22, (2010) [10.1002/adma.200901493]
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Percolative BaTiO3-Ni composite nanopowders from alkoxide-mediated synthesis
Journal of the European Ceramic Society 30, 561 - 567 (2010) [10.1016/j.jeurceramsoc.2009.06.024]
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Morphological and electical changes in TiO2 memristive devices induced by elecroforming and switching
Physica status solidi / Rapid research letters 4, (2010) [10.1002/pssr.200903347]
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Study on the dynamic resistance switching properties of NiO thin films
Thin solid films 518, 2258 - 2260 (2010) [10.1016/j.tsf.2009.10.040]
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A simulation model of resistive switching in electroechemical metallization memory cells
MRS online proceedings library 1160, 101 (2009)
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Impact of the electroforming process on the device stability of epitaxial Fe-doped SrTiO3 resistive switching cells
Journal of applied physics 106, 114507 (2009) [10.1063/1.3267485]
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Ionic and electronic conductivity of nitrogen-doped YSZ single crystals
Solid state ionics 180, (2009) [10.1016/j.ssi.2009.09.003]
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Thermodynamics, structure and kinetics in the system Ga-O-N
Progress in solid state chemistry 37, (2009) [10.1016/j.progsolidstchem.2009.11.005]
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Oxide nitrides: From oxides to solids with mobile nitrogen ions
Progress in solid state chemistry 37, (2009) [10.1016/j.progsolidstchem.2009.11.004]
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Microemulsion mediated synthesis of BaTiO3-Ag nanocomposites
Processing and Application of Ceramics 3, (2009)
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Dielectric properties and phase transition in SrBi2Nb2O9–SrBi2Ta2O9 solid solution
Ceramics International 35, 2351 - 2355 (2009) [10.1016/j.ceramint.2009.01.013]
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Insulator-semiconductor-metallic state transition induced by electric fields in Mn-doped NaNbO3
Physica status solidi / Rapid research letters 3, 127 - 129 (2009) [10.1002/pssr.200903052]
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Nano-scale chemical and structural segregation induced in surface layer of NaNbO3 crystals with thermal treatment at oxidising conditions studied by XPS, AFM, XRD, and electric properties tests
Phase transitions 82, 662 - 682 (2009) [10.1080/01411590903341155]
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Characterization of dye molecules and carbon nanostructures by tip-enhanced Raman spectroscopy
Physica status solidi / B 246, (2009) [10.1002/pssb.200982278]
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Self-neutralization via electroreduction in photoemission from SrTiO3 single crystals
Applied physics / A 97, 449 - 454 (2009) [10.1007/s00339-009-5240-0]
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Electromechanical properties of lanthanum-doped lead hafnate titanate thin films for integrated piezoelectric MEMS applications
Applied physics / A 94, 739 - 743 (2009) [10.1007/s00339-008-5045-6]
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High density 3D memory architecture based on the resistive switching effect
Solid state electronics 53, 1287 - 1292 (2009) [10.1016/sse.2009.09.034]
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Investigation of the reliability behavior of conductive-bridging memory cells
IEEE Electron Device Letters 30, 876 - 878 (2009) [10.1109/LED.2009.2024623]
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Selection of optimized materials for CBRAM based on HT-XRD and electrical test results
Journal of the Electrochemical Society 156, H729 - H 733 (2009) [10.1149/1.3160570]
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Electrochemical reactions in nanoionics - towards future resistive switching memories
Journal of the Electrochemical Society 25, 431 - 437 (2009) [10.1149/1.3206642]
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Structural and chemical characterization of TiO2 memristive devices by spatially-resolved NEXAFS
Nanotechnology 20, 485701 (2009) [10.1088/0957-4484/20/48/485701]
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Resistively switching Pt/Spin-on glass/Ag nanocells for non-volatile memories fabricated with UV nanoimprint lithography
Microelectronic engineering 86, (2009) [10.1016/j.mee.2009.01.054]
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The influence of copper top electrode on the resistive switching effect in TiO2 thin films studied by conductive atomic force microscopy
Applied physics letters 95, 013109 (2009) [10.1063/1.3167810]
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Electrical properties of Pt interconnects for passive crossbar memory arrays
Microelectronic engineering 86, 2275 - 2278 (2009) [10.1016/j.mee.2009.04.004]
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Electrode kinetics of Cu-SiO2-based resistive switching cells: overcoming the voltage-time dilemma of electrochemical metallization memories
Applied physics letters 94, 072109 (2009) [10.1063/1.3077310]
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Abnormal bipolar-like resistance change behavior induced by symmetric electroforming in Pt/TiO2/Pt resistive switching cells
Nanotechnology 20, (2009) [10.1088/0957-4484/20/37/375201]
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Observation of Josephson coupling through an interlayer of antiferromagnetically ordered chromium
Physical review / B 80(6), 064508 (2009) [10.1103/PhysRevB.80.064508]
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Josephson Junctions with Centred Step and Local Variation of Critical Current Density
IEEE transactions on applied superconductivity 19, 689 - 692 (2009) [10.1109/TASC.2009.2019049]
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Resistive non-volatile memory devices
Microelectronic engineering 86, (2009) [10.1016/j.mee.2009.03.132]
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Redox-based resistive switching memories - nanoionic mechanisms, prospects and challenges
Advanced materials 21, (2009) [10.1002/adma.200900375]
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Liquid injection atomic layer deposition of crystalline TiO2 thin films with a smooth morphology from Ti(O-i-Pr)2(DPM)2
Journal of the Electrochemical Society 156, D296 - D300 (2009) [10.1149/1.3138722]
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Growth of noble metal Ru thin films by liquid injection atomic layer deposition
The journal of physical chemistry <Washington, DC> / C 113, 11329 (2009) [10.1021/jp9021882]
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Integration of \"GexSe1-x\" in crossbar arrays for non-volatile memory applications
Microelectronic engineering 86, 1054 - 1056 (2009) [10.1016/j.mee.2009.01.010]
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Bipolar resistive electrical switching of CuTCNQ memories incorporating a dedicated switching layer
IEEE Electron Device Letters 30, 620 - 622 (2009) [10.1109/LED.2009.2020521]
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Mechanism for bipolar switching in a Pt/TiO2/Pt resistive switching cell
Physical review / B 79(19), 195317 (2009) [10.1103/PhysRevB.79.195317]
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Faradaic currents during electroforming of resistively switching Ag-Ge-Se type electrochemical metallization memory cells
Physical Chemistry Chemical Physics 11, (2009) [10.1039/b901026b]
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Comment on "Colossal ionic conductivity at interfaces of epitaxial ZrO2:Y2O3/SrTiO3 heterostructures
Science 324, 465 (2009) [10.1126/science.1168940]
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Transitions at domain boundaries in octanethiol monolayers on Au(111)
Surface science 603, 1156 - 1159 (2009) [10.1016/j.susc.2009.03.002]
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Josephson tunnel junctions with ferromagnetic Fe0.75Co0.25 barriers
Journal of applied physics 42, 075005 (2009) [10.1088/0022-3727/42/7/075005]
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Reliability analysis of the low resistance state stability of Ge_0.3Se_0.7 based solid electrolyte nonvolatile memory cells
Applied physics letters 94, 123503 (2009) [10.1063/1.3103555]
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Separation of bulk and interface contributions to electroforming and resistive switching behavior of epitaxial Fe-doped SrTiO3
Journal of applied physics 105, 066104 (2009) [10.1063/1.3100209]
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Field Emission Resonances at Tip/alpha, omega-Mercaptoalkyl-ferrocene/Au Interfaces Studied by STM
Small 5, 496 - 502 (2009) [10.1002/smll.200800802]
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Structural ordering of omega-ferrocenylalkanethiol monolayers on Au(111) studied by scanning tunneling microscopy
Surface science 603, 716 - 722 (2009) [10.1016/j.susc.2009.01.013]
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Crystal and magnetic structure of single-crystal La1-xSrxMnO3 (x ~ 1/8)
The European physical journal / B 67, 149 - 157 (2009) [10.1140/epjb/e2009-00019-5]
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Josephson tunnel junctions with strong ferromagnetic interlayer
Physical review / B 79(5), 054501 (2009) [10.1103/PhysRevB.79.054501]
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A nonvolatile memory with resistively switching methyl-silsesquioxane
IEEE Electron Device Letters 30, 8 - 10 (2009) [10.1109/LED.2008.2008108]
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Cu-adatom-mediated bonding in close-packed benzoate/Cu (110)-Systems
Langmuir 25, 856 - 864 (2009) [10.1021/la801822e]
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An Integrated Microelectromechanical Microwave Switch Based on Piezoelectric Actuation
Journal of electroceramics 22, (2009) [10.1007/s10832-008-9457-7]
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Magnetic anisotropy in ferromagnetic Josephson junctions
Applied physics letters 93, 052502 (2008) [10.1063/1.2967873]
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Direct electrical characterization of embedded ferroelectric lead titanate nanoislands
Journal of applied physics 103, 034113 (2008) [10.1063/1.2838346]
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Method to distinguish ferroelectric from nonferroelectric origin in case of resistive switching in ferroelectric capacitors
Applied physics letters 92, 062907 (2008) [10.1063/1.2841917]
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Nanoimprint for future non-volatile memory and logic devices
Microelectronic engineering 85, 870 - 872 (2008) [10.1016/j.mee.2008.01.101]
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Thin films of undoped lead titanate: Morphology and electrical properties
Integrated ferroelectrics 98, 3 - 10 (2008) [10.1080/10584580802096671]
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Realization of regular arrays of nanoscale resistive switching blocks in thin films by Nb-doped STO
Applied physics letters 93, 023110 (2008) [10.1063/1.2959074]
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Sr2TiO4 layered perovskite thin films grown by pulsed laser deposition
Applied physics letters 92, 241918 (2008) [10.1063/1.2945640]
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Pressure-induced phase transitions in micro-, submicro-, and nanocrystalline NaNbO3
The journal of physical chemistry <Washington, DC> / C 112, 9610 - 9616 (2008) [10.1021/jp801234g]
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Twisted magnetization state at the interface of an antiferromagnetically coupled Fe/Si multilayer as probed by specular and off-specular polarized neutron scattering
Physical review / B 77(18), 184409 (2008) [10.1103/PhysRevB.77.184409]
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Striped Phase of Mercaptoalkylferrocenes on Au(111) with a Potential for Nanoscale Surface Patterning
Langmuir 24, 4577 (2008) [10.1021/la703504m]
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Static and dynamic properties of 0, pi, and 0-pi ferromagnetic tunnel Josephson junctions
Physical review / B 77(21), 214506 (2008) [10.1103/PhysRevB.77.214506]
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Ferroelectric hollow particles obtained by solid-state reaction
Nanotechnology 19, 225602 (2008) [10.1088/0957-4484/19/22/225602]
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Properties of tunnel Josephson junctions with a ferromagnetic interlayer
Physical review / B 77(13), 134507 (2008) [10.1103/PhysRevB.77.134507]
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Controlled local filament growth and dissolution in Ag-Ge-Se
Physica status solidi / Rapid research letters 2, 129 - 131 (2008) [10.1002/pssr.200802054]
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Low current resistive switching in Cu-SiO2 cells
Applied physics letters 92, 122910 (2008) [10.1063/1.2903707]
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Size effects in ferroelectric nanostructures
Journal of alloys and compounds 449, (2008) [10.1016/j.jallcom.2005.12.133]
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Electrical and optical properties of chemical solution deposited barium hafnate titanate thin films
Thin solid films 516, 4970 - 4976 (2008) [10.1016/j.tsf.2007.09.041]
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Reduction of film thickness for chemical solution deposited PbZr0.3Ti0.7O3 thin films revealing no size effects and maintaining high remanent polarization and low coercive field
Thin solid films 516, 4713 - 4719 (2008) [10.1016/j.tsf.2007.08.073]
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Characterization of epitaxial lanthanum lutetium oxide thin films prepared by pulsed-laser deposition as an alternative gate dielectric
Applied physics / A 90, 577 - 579 (2008) [10.1007/s00339-007-4327-8]
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XPS studies of perovskites surface instability caused by Ar+ ion and electron bombardment and metal deposition
Vacuum 83, S69 - S72 (2008) [10.1016/j.vacuum.2009.01.032]
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Effect of in-plane shear strain on phase states and dielectric properties of epitaxial ferroelectric thin films
Journal of applied physics 104, 54118 (2008) [10.1063/1.2976347]
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Radiofrequency sputter deposition of germanium-sselenide thin films for resistive switching
Thin solid films 516, 1223 - 1226 (2008) [10.1016/j.tsf.2007.05.074]
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Non-linear properties of BaTiO3 above Tc
Ferroelectrics 375, 165 (2008) [10.1080/00150190802438025]
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Insulator-metal transition in Mn-doped NaNbO3 induced by chemical and thermal treatment
Phase transitions 81, 977 - 986 (2008) [10.1080/01411590802457755]
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Characteristic electroforming behavior in Pt/TiO2/Pt resistive switching cells depending on atmosphere
Journal of applied physics 104, 123716 (2008) [10.1063/1.3043879]
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Birefringence above T_c in single crystals of barium titanate
Journal of physics / Condensed matter 20, 142202 (2008) [10.1088/0953-8984/20/14/142202]
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Investigation of the amorphous to crystalline phase transition of chemical solution deposited Pb(Zr0.3Ti0.7)O3 thin films by soft X-ray absorption and soft X-ray emission spectroscopy
Journal of sol gel science and technology 48, 239 - 252 (2008) [10.1007/s10971-008-1816-y]
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Dynamics of ferroelectric nanodomains in BaTiO3 epitaxial thin films via piezoresponse force microscopy
Nanotechnology 19, 375703 (2008) [10.1088/0957-4484/19/37/375703]
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Wedgelike ultrathin epitaxial BaTiO3 films for studies of scaling effects in ferroelectrics
Applied physics letters 93, 072902 (2008) [10.1063/1.2972135]
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Large area piezoelectric actuators using metal foil substrates with Pb(Zr_x, Ti_1-x)O_3 thin films
Integrated ferroelectrics 100, 254 (2008) [10.1080/10584580802543375]
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Improved endurance behavior of resistive switching in (Ba,Sr)TiO3 thin films with W top electrode
Applied physics letters 93, 222102-1 (2008) [10.1063/1.3039809]
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Growth behavior of atomic-layer-deposited Pb(Zr,Ti)Ox thin films on planar substrate and three-dimensional hole structures
Journal of the Electrochemical Society 155, D715 (2008) [10.1149/1.2977717]
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Magnetic stray fields of patterned permalloy structures investigated by photoemission electron microscopy
Applied physics / A 88, 793 - 796 (2007) [10.1007/s00339-007-4085-7]
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Temperature-induced phase transitions in micro- submicro- and nanocrystalline NaNbO3
The journal of physical chemistry <Washington, DC> / C 111, 18493 (2007) [10.1021/jp0738053]
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Nanoionics-based resistive switching memories
Nature materials 6, 833 (2007) [10.1038/nmat2023]
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Liquid Injection Atomic Layer Deposition of TiOx Films Using Ti[OCH(CH3)2]4
Journal of the Electrochemical Society 154, G134 - G140 (2007) [10.1149/1.2724126]
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Decoherence and the quantum measurement problem (Letter to the Editor)
American journal of physics online 75, 1063 (2007) [10.1119/1.2800360]
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Synthesis and characterisation of zirconium–amido guanidinato complex: a potential precursor for ZrO2 thin films
Dalton transactions 1671 - 1676 (2007) [10.1039/b616861b]
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Comparative studies of defect production in heavily doped silicon under fast electron irradiation at different temperatures
Journal of materials science / Materials in electronics 18, 711 - 714 (2007) [10.1007/s10854-006-9103-6]
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Thin Films of ZrO2 for High-k Applications Employing Engineered Alkoxide- and Amide-Based MOCVD Precursors
Chemical vapor deposition 13, (2007) [10.1002/cvde.200606512]
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Thin Films of HfO2 for High-k Gate Oxide Applications from Engineered Alkoxide- and Amide-Based MOCVD Precursors
Journal of the Electrochemical Society 154, G77 - G84 (2007) [10.1149/1.2431324]
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Comment on “Dielectric tunability of (110) oriented barium strontium titanate epitaxial films on (100) orthorhombic substrates” [Appl. Phys. Lett. 89, 042903 (2006)]
Applied physics letters 90, 036101 (2007) [10.1063/1.2430492]
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Liquid injection ALD of Pb(Zr,Ti)Ox thin films by a combination of self-regulating component oxide processes
Journal of the Electrochemical Society 154, G262 - G269 (2007) [10.1149/1.2789295]
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Ferromagnetic o-pi Josephson junctions
Applied physics / A 89, 613 (2007) [10.2007/s00339-007-4206-3]
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Understanding the switching-off mechanism in Ag+ migration based resistively switching model systems
Applied physics letters 91, 133513 (2007) [10.1063/1.2793686]
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Resistive switching in Ge0.3Se0.7 films by means of copper ion migration
Zeitschrift für Physikalische Chemie 221, (2007) [10.1524/zpch.2007.221.11-12.1469]
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Bipolar and unipolar resistive switching in Cu-doped SiO2
IEEE Transactions on Electron Devices 54, 2762 (2007) [10.1109/TED.2007.904402]
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A new test facility for efficient evaluation of MEMS contact materials
Journal of micromechanics and microengineering 17, 1788 (2007) [10.1088/0960-1317/17/9/006]
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Elastic stabilization of a single-domain ferroelectric state in nanoscale capacitors and tunnel junctions
Physical review letters 98, 257603 (2007) [10.1103/PhysRevLett.98.257603]
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Polarization and lattice strains in epitaxial BaTiO3 films grown by high-pressure sputtering
Journal of applied physics 101, 114106 (2007) [10.1063/1.2745277]
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Raman scattering studies on nanocrystalline BaTiO3, Part II - consolidated polycrystalline ceramics
Journal of Raman spectroscopy 38, 1300 - 1306 (2007) [10.1002/jrs.1763]
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Raman scattering studies on nanocrystalline BaTiO3, Part I - isolated particles and aggregates
Journal of Raman spectroscopy 38, 1288 - 1299 (2007) [10.1002/jrs.1764]
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On the origin of bistable resistive switching in metal organic charge transfer complex memory cells
Applied physics letters 91, 083506 (2007) [10.1063/1.2772191]
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Morphology control of highly-transparent indium tin oxide thin films prepared by a chlorine-reduced metallo-organic decomposition technique
Thin solid films 515, (2007) [10.1016/j.tsf.2006.09.045]
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Chemical modifications of Pb(Zr0.3,Ti0.7)O3 precursor solutions and their influence on the morphological and electrical properties of the resulting thin films
Journal of sol gel science and technology 42, 337 - 352 (2007) [10.1007/s10971-007-0764-2]
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Enhanced stability of platinized silicon substrates using an unconventional adhesion layer deposited by CSD for high temperature dielectric thin film deposition
Applied physics / A 87, 705 - 708 (2007) [10.1007/s00339-007-3866-3]
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Photoemission study of SrTiO3 surface layers instability upon metal deposition
Applied physics / A 89, 451 - 455 (2007) [10.1007/s00339-007-4134-2]
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Resistive switching in a Pt/TiO2/Pt thin film stack - a candidate for a non-volatile ReRAM
Microelectronic engineering 84, 1982 - 1985 (2007) [10.1016/j.mee.2007.04.042]
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Coexistence of bipolar and unipolar resistive switching behavior in a Pt/TiO2/Pt stack
Electrochemical and solid-state letters 10, G51 - G53 (2007) [10.1149/1.2742989]
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A model for a resistive switch memory cell with rechargeable space charge
Integrated ferroelectrics 90, 113 - 120 (2007) [10.1080/10584580701249413]
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Microstructure and electrical properties of BaTiO3 and (Ba,Sr)TiO3 ferroelectric thin films on nickel electrodes
Journal of sol gel science and technology 42, 203 (2007) [10.1007/s10971-007-0763-3]
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Neue piezoelektrische Materialien für die Mikroaktorik
GMM Fachbericht 53, 143 (2007)
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Aging-induced dielectric relaxation in barium titanate ceramics
Applied physics letters 90, 112902 (2007) [10.1063/1.2713178]
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Propane gas sensing with high-density SrTi0.6Fe0.4O(3-gamma) ceramics evaluated by thermogravimetric analysis
Journal of the European Ceramic Society 27, 285 (2007) [10.1016/j.jeurceramsoc.2006.05.078]
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Comparison of three different architectures for active resistive memories
AEU - International Journal of Electronics and Communications 61, 345 - 352 (2007) [10.1016/j.aeue.2006.06.004]
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Electrical Characterization of Biphenylalkanethiol SAMs
The journal of physical chemistry <Washington, DC> / C 111, 6392 (2007) [10.1021/jp067459l]
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Electrochemical Fabrication and Characterization of Nanocontacts and nm-sized Gaps
Applied physics / A 87, 569 - 575 (2007) [10.1007/s00339-007-3903-2]
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Self-Assembly of Mixed Monolayers of Mercaptoundecylferrocene and Undecanethiol studied by STM
Journal of physics / Conference Series 61, 852 (2007) [10.1088/1742-6596/61/1/170]
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Liquid Injection MOCVD of Dysprosium Scandate Films: Deposition Characteristics and High-k Applications
Journal of the Electrochemical Society 154, G147 - G154 (2007) [10.1149/1.2731299]
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Neutron-diffraction study of structural transition and magnetic order in orthorhombic and rhombohedral La7/8Sr1/8Mn1-gammaO3+delta
Journal of physics / Condensed matter 19, 176226-1 -176226-12 (2007) [10.1088/0953-8984/19/17/176226]
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Nanoscale resistive switching in SrTiO3 thin films
Physica status solidi / Rapid research letters 1, R86 (2007) [10.1002/pssr.200701003]
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Noncentrosymmetric phase of submicron NaNbO3 crystallites
Journal of electroceramics 19, 273 - 280 (2007) [10.1007/s10832-007-9032-7]
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Low T_c Josephson junctions with tailored barrier
Journal of applied physics 101, 063902 (2007) [10.1063/1.2655487]
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Thickness dependence of intrinsic dielectric response and apparent interfacial capacitance in ferroelectric thin films
Journal of applied physics 101, 074102 (2007) [10.1063/1.2713934]
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Surface layer of SrRuO3 epitaxial thin films under oxidizing and reducing conditions
Journal of applied physics 101, 023701 - 0237011 (2007) [10.1063/1.2408382]
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Growth of ternary PbTiOx films in a combination of binary oxide atomic layer depositions
Journal of applied physics 101, 014114 (2007) [10.1063/1.2422777]
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Correlation between structural and magnetic properties of La7/8Sr1/8Mn1-gammaO3 delta with controlled nonstoichiometry
Journal of physics / Condensed matter 19, 016003-1 - 016003-12 (2007) [10.1088/0953-8984/19/1/016003]
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Switching the electrical resistance of individual dislocations in single crystalline SrTiO3
Virtual journal of nanoscale science & technology 14, 2 (2006)
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Laser annealing of BST thin films with reduced cracking at an elevated temperature
Materials science and engineering / B 133, (2006) [10.1016/j.mseb.2006.06.003]
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Capacitive-resistive nondriven plateline cell architecture for RRAM technology
AEU - International Journal of Electronics and Communications 60, 459 - 461 (2006) [10.1016/j.aeue.2005.09.005]
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Composition influences on the electrical and electromechanical properties of lead zirconate titanate thin films
Journal of applied physics 100, 124105-1 - 124105-8 (2006) [10.1063/1.2401047]
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Design optimization and implementation of bandpass filters with normally fed microstrip resonators loaded by high-permittivity dielectric
IEEE transactions on microwave theory and techniques 54, 1253 - 1261 (2006) [10.1109/TMTT.2006.869709]
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Preparation and characterisation of amorphous Cu: 7,7,8,8-Tetracyanoquinodimethane thin films with low surface roughness via thermal co-deposition
Thin solid films 515, 1893 - 1896 (2006) [10.1016/j.tsf.2006.07.028]
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Fatigue effect in ferroelectric PbZr1-xTixO3 thin films
Journal of physics / D 99, 114104-1 - 114104-5 (2006) [10.1063/1.2200470]
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Variable size and shape distribution of ferroelectric nanoislands by chemical mechanical polishing
Small 2, 500 - 502 (2006) [10.1002/smll.200500438]
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Structural, dielectric and electrochemical study of Hf-substituted BaTiO3 thin films fabricated by CSD
Applied physics / A 83, 285 - 288 (2006) [10.1007/s00339-006-3494-3]
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STM study of mixed alkanethiol/biphenylthiol self-assembled monolayers on Au(111)
Langmuir 22(7), 3021 - 3027 (2006) [10.1021/la052791u]
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Translation and orientation domain boundaries in La2/3Ca1/3MnO3
Philosophical magazine <London> / A 86, 2329 - 2342 (2006) [10.1080/14786430500519780]
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Defect production in heavily doped n-Si irradiated with fast electrons at cryogenic temperatures
Physica / B 376-377, 173 - 176 (2006) [10.1016/j.physb.2005.12.046]
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Temperature-dependent structure of epitaxial (Ba,Sr)TiO3 films grown on SrRuO3-covered SrTiO3 substrates
Chinese physics letters 23, 1269 - 1272 (2006) [10.1088/0256-307X/23/5/056]
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Synthesis and characterisation of La0.4Ba0.6Ti0.6RE0.4 (where RE = Y, Yb) ceramics
Journal of the European Ceramic Society 26, (2006) [10.1016/j.jeurceramsoc.2005.09.095]
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Influence of thickness and Zr content on Ba(TixZr1-x)O3 thin films
Ferroelectrics 332, 153 - 157 (2006) [10.1080/00150190500316465]
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Electrostrictive and piezoelectric effect in BaTiO3 and PbZrO3
Ferroelectrics 336, 61 - 67 (2006) [10.1080/00150190600695743]
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Proton conductivity in silica gels
Ionics 12, 131 - 134 (2006) [10.1007/s11581-006-0028-0]
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Hysteretic resistance concepts in ferroelectric thin films
Journal of applied physics 100, 051611 (2006) [10.1063/1.2337078]
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1-D simulation of a novel nonvolatile resistive random access memory device
IEEE transactions on ultrasonics, ferroelectrics, and frequency control 53, 2340 - 2348 (2006) [10.1109/TUFFC.2006.182]
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Sample-tip interaction of piezoresponse force microscopy in ferroelectric nanostructures
IEEE transactions on ultrasonics, ferroelectrics, and frequency control 53, 2253 - 2260 (2006) [10.1109/TUFFC.2006.170]
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A novel reference scheme for reading passive resistive crossbar memories
IEEE transactions on nanotechnology 5, 687 - 691 (2006) [10.1109/TNANO.2006.885016]
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Polarization states of polydomain epitaxial Pb(Zr_1-xTi_x)O_3 thin films and their dielectric properties
Physical review / B 73(21), 214103 (2006) [10.1103/PhysRevB.73.214103]
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Low-voltage operation of metal-ferroelectric-insulator-semiconductor diodes incorporating a ferroelectric polyvinylidene fluoride copolymer Langmuir-Blodgett film
Journal of applied physics 100, 024110 (2006) [10.1063/1.2218463]
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Ferroelectric thin films: Review of materials, properties and applications
Journal of applied physics 100, 051606 (2006) [10.1063/1.2336999]
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O-pi Josephson tunnel junctions with ferromagnetic barrier
Physical review letters 97, 247001 (2006) [10.1103/PhysRevLett.97.247001]
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Guanidinate-stabilized monomeric hafnium amide complexes as promising precursors for MOCVD of HfO2
Inorganic chemistry 45, 11008 - 11018 (2006) [10.1021/ic061056i]
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Dysprosium scandate thin films as an alternate amorphous gate oxide prepared by metal-organic chemical vapor deposition
Applied physics letters 89, 232902 (2006) [10.1063/1.2402121]
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Self-assembly of diblock-copolymer micelles for template based preparation of PbTiO3 nanograins
Advanced functional materials 16, 2346 - 2354 (2006) [10.1002/adfm.200600384]
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Interactions from Self-Coordination Numbers - A Physical Relation Without Formula
International journal of modern physics / B 20, 2065 - 2084 (2006) [10.1142/S0217979206034315]
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Characterization of Structure Types by Lattice Complexes with Increased Self-Coordination Numbers
Zeitschrift für Naturforschung / B 61, 983 - 994 (2006)
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Simultaneous measurement of the piezoelectric and dielectric response of nanoscale ferroelectric capacitors by an atomic force microscopy based approach
Applied physics / A 84, 67 (2006) [10.1007/s00339-006-3592-2]
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Impedance spectroscopy of TiO2 thin film showing resistive switching
Applied physics letters 89, 082909 (2006) [10.1063/1.2336621]
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Geometric shadowing from rippled SrRuO3/SrTiO3 surface templates induces self-organization of epitaxial SrZrO3 nanowires
Physical review / B 74(20), 205410 (2006) [10.1103/PhysRevB.74.205410]
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Electrical properties of (Ba, Sr) TiO3 thin films revisited: the case of chemical vapor deposited films on Pt electrodes
Journal of applied physics 99, 114108 (2006) [10.1063/1.2202115]
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Liquid injection MOCVD of ZrO2 thin films using a novel zirconium Bis(diethylamido)-bis(di-tert-butylmalonato) as a novel precursor
Chemical vapor deposition 12, 295 - 300 (2006) [10.1002/cvde.200506481]
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Consolidation microstructure and crystallography of dense NaNbO3 ceramics with ultrafine grainz size
Journal of the Ceramic Society of Japan 114, 995 - 1000 (2006) [10.2109/jcersj.114.995]
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Preparation, processing and characterization of nano-crystalline BaTiO3 powders and ceramics derived from microemulsion mediated synthesis
Journal of the American Ceramic Society 0, 2908 (2006) [10.1111/j.1551-2916.2006.01144.x]
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Resistive switching of rose bengal devices: a molecular effect?
Journal of applied physics 100, 094504 (2006) [10.1063/1.2364036]
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Liquid-injection atomic layer deposition of TiOx and Pb-Ti-O films
Journal of the Electrochemical Society 153, F199 - F204 (2006) [10.1149/1.2219709]
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High quality ferromagnetic 0 and pi Josephson tunnel junctions
Applied physics letters 89, 122511 (2006) [10.1063/1.2356104]
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Controlled crystal growth of layered-perovskite thin films as an approach to study their basic properties
Journal of applied physics 100, 051602 (2006) [10.1063/1.2337357]
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Electrical conductivity of epitaxial SrTiO3 thin films as a function of oxygen partial pressure and temperature
Journal of the American Ceramic Society 89, 2845 (2006) [10.1111/j.1551-2916.2006.01178.x]
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Thickness dependence of dielectric properties in bismuth layer-structured dielectrics
Applied physics letters 89, 082901 (2006) [10.1063/1.2336626]
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Applied physics: tunneling across a ferroelectric
Science 313, 181 - 183 (2006) [10.1126/science.1126230]
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Fabrication of High Quality Ferromagnetic Josephson Junctions
Physica / C 437-438, 349 - 352 (2006) [10.1016/j.physc.2005.12.046]
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Resonant Tunneling Magnetoresistive in Antiferromagnetically coupled Fe-based Structures with Multilayered Si/Ge Spacers
Applied physics letters 88, 172105 (2006) [10.1063/1.2198812]
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Microemulsion Mediated Synthesis of Nanocrystalline BaTiO3: Possibilities, Potential and Perspectives (dedicated to Professor Dr. Fritz Aldinger on the occasion of his 65th birthday)
International journal of materials research 97, 499 - 507 (2006)
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Growth dynamics and strain relaxation mechanisms in BaTiO3 pulsed laser deposited on SrRuO3/SrTiO3
Physical review / B 73(12), 125413 (2006) [10.1103/PhysRevB.73.125413]
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Protected Nanoelectrodes of two different Metals with 30 nm Gap-width and Access-window
Microelectronic engineering 83, 1702 - 1705 (2006) [10.1016/j.mee.2005.12.023]
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Molecular Structure of Ferrocenethiol Islands embedded into Alkanethiol Self-Assembled Monolayers by UHV-STM
Physica status solidi / A 203, 1448 - 1452 (2006) [10.1002/pssa.200566148]
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Metallic Nanogaps with Access Windows for Liquid-based Systems
Microelectronics Journal 37, 591 - 594 (2006) [10.1016/j.mejo.2005.09.031]
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Switching the electrical resistance of individual dislocations in single-crystalline SrTiO3
Nature materials 5, 312 (2006) [10.1038/nmat1614]
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MOCVD of ZrO2 and HfO2 Thin Films from Modified Monomeric Precursors
Chemical vapor deposition 12, 172 (2006) [10.1002/cvde.200506394]
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Mechanical Crosstalk between Vertical and Lateral Piezoresponse Force Microscopy
Review of scientific instruments 77, 036103 (2006) [10.1063/1.2176081]
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Phase diagrams in the proton conductor systems Sr6Ta2O22 x nH2O and Sr5.92Ta2.08O11.12 x n H2O
Solid state ionics 177, 471 (2006) [10.1016/j.ssi.2005.11.010]
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Resistive switching and data reliability of epitaxial (Ba,SR)TiO3 thin films
Applied physics letters 88, 042901 (2006) [10.1063/1.2162860]
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Influence of adsorbates on the piezoresponse of KnBO3
Physica status solidi / A 203, 616 - 621 (2006) [10.1002/pssa.200521366]
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Mixed amide-malonate compound of hafnium as a novel monomeric precursor for MOCVD of HfO2 thin films
Journal of materials chemistry 16, 437 (2006) [10.1039/b509380e]
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Electrical properties of the grain boundaries of oxygen ion conductors: acceptor-doped zirconia and ceria
Progress in materials science 51, 151 (2006) [10.1016/j.pmatsci.2005.07.001]
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Effects of reversible and irreversible ferroelectric switching on the piezoelectric large-signal response of PZT thin films
Journal of applied physics 98, 124101 (2005) [10.1063/1.2146055]
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A dynamic reference scheme for nonvolatile ferroelectric RAM
Integrated ferroelectrics 72, 31 - 37 (2005) [10.1080/10584580500312644]
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Polymorphism in micro-, submicro-, and nanocrystalline NaNbO3
The journal of physical chemistry <Washington, DC> / B 109, 20122 - 20130 (2005) [10.1021/jp052974p]
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Self-assembled nanostructures on VSe2 surfaces induced by Cu deposition
Microscopy and microanalysis 11, 456 - 471 (2005) [10.1017/S1431927605050373]
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Self-assembled nanostructures networks on surfaces of layered crystals
Microscopy and microanalysis 11, 200 (2005)
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Monte Carlo simulations of imprint behavior in ferroelectrics
Applied physics letters 87, 242902 (2005) [10.1063/1.2140076]
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MOCVD growth of (Pb, Ba) (Zr, Ti) O3 thin films for memory applications
Integrated ferroelectrics 75, 225 - 233 (2005) [10.1080/10584580500428341]
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Interfacial reaction in the growth of epitaxial SrTiO3 thin films on (001) Si substrates
Journal of applied physics 97, 104921 (2005) [10.1063/1.1915519]
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Misfit dislocations in nanoscale ferroelectric heterostructures
Applied physics letters 86, 192910 (2005) [10.1063/1.1922579]
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Nanoscale polarization relaxation in a polycrystalline ferroelectric thin film: role of local environments
Applied physics letters 86, 262910 (2005) [10.1063/1.1977183]
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Integration of stacked capacitor module with ultra-thin ferroelectric SrBi2Ta2O9film for high density ferroelectric random access memory applications at low voltage operation
Thin solid films 473, 328 (2005) [10.1016/j.tsf.2004.08.087]
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Dynamic leakage current compensation in ferroelectric thin-film capacitor structures
Applied physics letters 86, 142907 (2005) [10.1063/1.1897425]
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Theoretical current-voltage characteristics of ferroelectric tunnel junctions
Physical review / B 72(12), 125341 (2005) [10.1103/PhysRevB.72.125341]
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Effect of ozone treatment on the electrical properties of (Ba0.7Sr0.3)TiO3 thin films
Journal of applied physics 97, 114904 (2005) [10.1063/1.1927289]
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Mechanical force sensors using organic thin-film transistors
Journal of applied physics 97, 93708 (2005) [10.1063/1.1888046]
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Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition
Journal of applied physics 98, 33715 (2005) [10.1063/1.2001146]
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Experimental and numerical investigations of heat transport and crystallization kinetics in laser-induced modification of barium strontium titanate thin films
Applied physics / A 80, 1553 (2005) [10.1007/s00339-004-2904-7]
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Nanoelectronics: materials and concepts
NanoS 2, 14 (2005)
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High-k dielectric materials by metalorganic chemical vapor deposition: growth and characterization
Ferroelectrics 327, 111 (2005) [10.1080/00150190500316531]
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Nonlinear electrical properties of grain boundaries in oxygen ion conductors - Modeling the varistor behavior
Electrochemical and solid-state letters 8, E67 (2005) [10.1149/1.2008940]
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Ionic conduction in zirconia films on nanometer thickness
Acta materialia 53, 5161 (2005) [10.1016/j.actamat.2005.07.033]
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Schottky barrier formed by network of screw dislocations in SrTiO3
Applied physics letters 87, 162105 (2005) [10.1063/1.2112202]
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Influence of impurities on the conductivity of composites in the system (3YSZ)1-x-(MgO)x
Journal of power sources 148, 32 - 42 (2005) [10.1016/j.jpowsour.2005.01.036]
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Integration of ferroelectric lead titanate nanoislands for direct hysteresis measurements
Applied physics letters 87, 142904 (2005) [10.1063/1.2084322]
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Contributions to in-plane piezoresponse on axially symmetrical samples
Review of scientific instruments 76, 106108 (2005) [10.1063/1.2090367]
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Metal organic chemical vapor deposition of (Ba,Sr)TiO3: Nucleation and growth on Pt-(111)
Journal of applied physics 98, 084904-1 - 084904-12 (2005) [10.1063/1.2084312]
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Contact mode potentiometric measurements with an atomic force microscope on high resistive perovskite thin films
Journal of the European Ceramic Society 25, 2353 (2005) [10.1016/j.jeurceramsoc.2005.03.195]
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Registered deposition of nanoscale ferroelectric grains by template-controlled growth
Advanced materials 17, 1357 - 1361 (2005) [10.1002/adma.200401695]
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Fabrication and electrical characterization of Zr-substituted BaTiO3 thin films
Applied physics / A 81, 25 - 29 (2005) [10.1007/s00339-004-3096-x]
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Electromechanical properties of Ba(Ti1-xZrx)O3 thin films
Applied physics / A 81, 11 - 13 (2005) [10.1007/s00339-005-3247-8]
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Phase states of nanocrystalline ferroelectric ceramics and their dielectric properties
Journal of applied physics 97, 114315 (2005) [10.1063/1.1924875]
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Characterization of chemical solution deposition-derived lead hafnate titanate thin films
Journal of the American Ceramic Society 88, 1312 - 1314 (2005) [10.1111/j.1551-2916.2004.00177.x]
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Effects of ferroelectric fatigue on the piezoelectric properties (d33) of tetragonal lead zirconate titanate thin films
Applied physics letters 86, 112908 (2005) [10.1063/1.1886259]
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Crystallization temperature limit of (Ba,Sr)TiO3 thin films prepared by a non oxocarbonate phase forming CSD route
Journal of sol gel science and technology 33, 299 - 306 (2005) [10.1007/s10971-005-6379-6]
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SrTa2O6 thin films for high-K dielectric applications grown by chemical vapor deposition on different substrates
Journal of applied physics 97, 073521 (2005) [10.1063/1.1873033]
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Transformation of an oxygen ion conductor to a proton conductor by solid state reaction
Solid state ionics 176, (2005) [10.1016/j.ssi.2005.06.021]
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Influence of grain-boundary defects on electric transport in CeRhSn with a non-Fermi-liquid ground state
Physical review / B 72(8), 085443 (2005) [10.1103/PhysRevB.72.085443]
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Analysis of shape effects on the piezoresponse in ferroelectric nanograins with and without adsorbates
Applied physics letters 87, 082901 (2005) [10.1063/1.2010603]
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Comment on: 'Ferroelectricity of single-crystalline, monodisperse lead zirconate nanoparticles of 9 nm in diameter'
Applied physics letters 86, 256101 (2005) [10.1063/1.1953886]
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Rectangular (3x23) superlattice of a dodecanethiol self-assembled monolayer on Au(111) observed by ultra-high-vacuum scanning tunneling microscopy
The journal of physical chemistry <Washington, DC> / B 109, 11424 - 11426 (2005) [10.1021/jp051993w]
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Sr diffusion in undoped and La-doped SrTiO3 single crystals under oxidizing conditions
Physical Chemistry Chemical Physics 7(9), 2053 - 2060 (2005) [10.1039/b418824a]
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Microemulsion mediated synthesis of nanocrystalline (Kx,Na1-x)NbO3 powders
Journal of crystal growth 280, 191 - 200 (2005) [10.1016/j.jcrysgro.2005.03.038]
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Improved PbZr0.52Ti0.48O3 film quality on SrRuO3/SrTiO3 substrates
Journal of crystal growth 277, 210 - 217 (2005) [10.1016/j.jcrysgro.2004.12.137]
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A new phase of the c(4x2) superstructure of alkanethiols grown by vapour phase deposition on gold
Langmuir 21, 5256 - 5258 (2005) [10.1021/la0503552]
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Oxygen vacancy migration and time-dependent leakage current behavior of Ba0.3Sr0.7TiO3 thin films
Applied physics letters 86, 112904 (2005) [10.1063/1.1874313]
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Microstructure of epitaxial BST/SRO bilayer films on SrTiO3 substrates
Journal of applied physics 97, 104907 (2005) [10.1063/1.1897067]
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Composites of ceramic high-temperature proton conductors with inorganic compounds
Electrochemical and solid-state letters 8, A199 - A200 (2005) [10.1149/1.1865592]
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Comparison of in-plane and out-of-plane optical amplification in AFM measurements
Review of scientific instruments 76, 046101 (2005) [10.1063/1.1878153]
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Nanosize ferroelectric oxides - tracking down the superparaelectric limit
Applied physics / A 80, 1247 (2005) [10.1007/s00339-004-3167-z]
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Comparison of precursors for pulsed metal-organic chemical vapor deposition of HfO2 high-k dielectric thin films
Thin solid films 478, 206 (2005) [10.1016/j.tsf.2004.11.055]
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Effect of anisotropic in-plane strains on phase states and dielectric properties of epitaxial ferroelectric thin films
Applied physics letters 86, 052903 (2005) [10.1063/1.1855389]
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Progress in the synthesis of nanocrystalline BaTiO3 powders for MLCC
International journal of applied ceramic technology 2, 1 (2005)
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Nonlinear electrical properties of grain boundaries in oxygen ion conductors: case of acceptor doped ceria
Electrochemical and solid-state letters 8, J1 - J3 (2005) [10.1149/1.1830393]
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Entry and exit of water vapor in bulk ceramic proton conductors
Solid state ionics 176, 357 - 362 (2005) [10.1016/j.ssi.2004.07.019]
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SrZrO3 nanopatterning using self-organizing SrRuO3 as a template
Advanced materials 17, 281 (2005) [10.1002/adma.200400718]
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Enhancement of p-type conductivity in nanocrystalline BaTiO3 Ceramics
Applied physics letters 86, 082110 (2005) [10.1063/1.1864232]
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Impact of the top-electrode material on the permittivity of single-crystalline Ba0.7Sr0.3TiO3 thin films
Applied physics letters 86, 202908 (2005) [10.1063/1.1931063]
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The origin of faceting of ultrafat gold films epitaxially grown on Mica
Applied surface science 249, 197 - 200 (2005) [10.1016/j.apsusc.2004.11.082]
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Electrostrictive resonances in (Ba0.7Sr0.3)TiO3 thin films at microwave frequencies
Applied physics letters 85, 624 (2004) [10.1063/1.1775880]
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In-situ compensation of the parasitic capacitance for nanoscale hysteresis measurements
Journal of the European Ceramic Society 24, 1145 (2004) [10.1016/S0955-2219(03)00583-1]
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Resistive donor-doped SrTiO3 sensors: I, basic model for a fast sensor response
Sensors and actuators <Lausanne> / B 101, 335 (2004) [10.1016/j.snb.2004.04.004]
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Effect of interfaces in Monte Carlo computer simulations of ferroelectric materials
Applied physics letters 84, 2379 (2004) [10.1063/1.1687455]
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Laser crystallization studies of barium strontium titanate thin films
Journal of the European Ceramic Society 24, 3013 (2004) [10.1016/j.jeurceramsoc.2003.11.007]
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Theoretical optimization of the self-organized growth of nanoscale arrays through a figure of merit
Applied physics letters 85, 3714 - 3716 (2004) [10.1063/1.1807032]
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Nanocrystalline alkaline earth titanate and their conductivity characteristics under changing oxygen ambients
Journal of electroceramics 13, 599 - 603 (2004) [10.1007/s10832-004-5164-1]
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Scaling effect on the dielectric constant in Ba(TixZr1-x)O3 thin films
Journal of electroceramics 13, (2004)
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Phase transformation of KNaNb2O6 induced by size effect
Chemical physics letters 391, 288 (2004) [10.1016/j.cplett.2004.05.024]
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Preparation, sintering, and water incorporation of proton conducting Ba0.99Zr0.8Y0.2O3-delta: comparison between three different synthesis techniques
Solid state ionics 175, 585 - 588 (2004) [10.1016/j.ssi.2004.03.045]
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Space charge concept for acceptor-doped zirconia and ceria and experimental evidences
Solid state ionics 173, 63 - 67 (2004) [10.1016/j.ssi.2004.07.053]
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A laboratory scale moulding technique to fabricate high precision 2D columnar and honeycomb structures
Materials letters 58, 3945 - 3947 (2004) [10.1016/j.matlet.2004.09.015]
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Proton Conducting Ceramics: Recent Advances
Ionics 10, 391 - 395 (2004) [10.1007/BF02377999]
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Interfacial reactions and microstructure of BaTiO3 films prepared using fluorideprecursor method
Applied surface science 221, 178 - 183 (2004) [10.1016/S0169-4332(03)00869-9]
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Interface related thickness dependence of the tunability in BaSrTiO3 thin films
Applied physics letters 85, 4708 - 4710 (2004) [10.1063/1.1824173]
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Effects of ferroelectric switching on the piezoelectric small-signal response (d33) and electrostriction (M33) of lead zirconate titanate thin films
Journal of applied physics 95, 4976 - 4980 (2004) [10.1063/1.1690098]
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Effects of the top-electode size on the piezoelectric properties (d(sub33) and S) of lead zirconate titanate thin films
Journal of applied physics 96, 2800 - 2804 (2004) [10.1063/1.1775306]
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Chemical solution deposition of electronic oxide films
Comptes rendus chimie 7, 433 (2004) [10.1016/j.crci.2004.01.007]
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Characterization of Ba(Ti,Zr)O3 ceramics sintered under reducing conditions
Journal of the European Ceramic Society 24, 1473 - 1477 (2004) [10.1016/S0955-2219(03)00573-9]
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Reversible and irreversible piezoelectric and ferroelectric response in ferroelectric ceramics and thin films
Journal of the European Ceramic Society 24, 725 - 732 (2004) [10.1016/S0955-2219(03)00317-0]
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A new concept for using ferroelectric transistors in nonvolatile memories
Integrated ferroelectrics 60, 45 - 58 (2004) [10.1080/10584580490441197]
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Size effects in ultrathin epitaxial ferroelectric heterostructures
Applied physics letters 84, (2004) [10.1063/1.1765742]
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Use of reactive gases with broad-beam radio frequency ion sources for industrial applications
Journal of vacuum science & technology / A 22, 1493 - 1499 (2004) [10.1116/1.1692396]
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Mononuclear precursor for MOCVD of HfO2 thin films
Chemical communications 1610 - 1611 (2004) [10.1039/b405015k]
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MOCVD of TiO2 thin films and studies on the nature of molecular mechanisms involved in the decomposition of [Ti(OPri)2(tbaoac)2]
Journal of materials chemistry 14, 3231 - 3238 (2004) [10.1039/b405963h]
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Property degradation of tetragonal zirconia induced by low-temperature defect reaction with water molecules
Chemistry of materials 16, 3988 - 3994 (2004) [10.1021/cm040167h]
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Bismuth zinc niobate (Bi1.5ZnNb1.5O7) ceramics derived from metallo-organic decomposition precursor solution
Solid state communications 132, 481 - 486 (2004) [10.1016/j.ssc.2004.07.071]
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Structured oxide ceramics by a sodium chloride moulding technique
Materials letters 58, 3348 - 3349 (2004) [10.1016/j.matlet.2004.06.035]
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Piezoresponse in the light of surface adsorbates: Relevance of defined surface conditions for perovskite materials
Applied physics letters 85, 2896 (2004) [10.1063/1.1799241]
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Inhomogeneous Local Conductivity Induced by Thermal Reduction in BaTiO3 Thin Films and Single Crystals
Integrated ferroelectrics 61, 43 - 49 (2004) [10.1080/10584580490458865]
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Re-examination of charge and orbital ordering in lightly doped La1-xSrxMnO3 by X-ray scattering
Journal of magnetism and magnetic materials 272-276, e291 - e292 (2004) [10.1016/j.jmmm.2003.11.163]
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Fabrication of stress-induced SrRuO3 nanostructures by pulsed laser deposition
Applied physics / A 79, 1461 (2004) [10.1007/s00339-004-2811-y]
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Sol-gel Preparation of Selected High Temperature Proton Conductors
Ionics 10, 17 (2004) [10.1007/BF02410299]
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Water Incorporation in Tetragonal Zirconia
Journal of the American Ceramic Society 87, 746 - 748 (2004) [10.1111/j.1551-2916.2004.00746.x]
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Fabrication of arrays of SrZrO3 nanowires by pulsed laser deposition
Nanotechnology 15, s122 - s125 (2004) [10.1088/0957-4484/15/4/002]
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Thickness independence of true phase transition temperatures in barium strontium titanate films
Journal of applied physics 96, 555 - 562 (2004) [10.1063/1.1759084]
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Pushing towards the digital storage limit
Nature materials 3, 81 - 82 (2004) [10.1038/nmat1067]
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Grain boundary space charge effect in Zirconia
Journal of the Electrochemical Society 151, J1 - J7 (2004) [10.1149/1.1625948]
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High temperature superconductor dc-SQUID microscope with a soft magnetic flux guide
Superconductor science and technology 17, s191 - s195 (2004) [10.1088/0953-2048/17/5/020]
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Microstructure and interfaces of HfO2 thin films grown on silicon substrates
Journal of crystal growth 262, 295 - 303 (2004) [10.1016/j.jcrysgro.2003.10.026]
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Influence of asymmetric oxide electrode structures on the interface capacity and the failure mechanisms in PZT thin films
Integrated ferroelectrics 52, 63 (2003) [10.1080/10584580390254123]
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Preparation and characterization of high density, high purity lanthanum aluminate bulk ceramics
Journal of electroceramics 10, 193 - 202 (2003) [10.1023/B:JECR.0000011217.93927.1a]
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Sharp ferroelectric phase transition in strained epitaxial SRO-BST-SRO capacitors
Applied physics letters 83, 5011 (2003) [10.1063/1.1633027]
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Orthorhombic strontium titanate in BaTiO3-SrTiO3 superlattices
Journal of physics / Condensed matter 15, L305 (2003) [10.1088/0953-8984/15/21/101]
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Electronic structure of Sn2P2S6
Physical review / B 67(11), 115101 (2003) [10.1103/PhysRevB.67.115101]
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The thickness dependence of leakage current in thin films
Applied physics letters 83, 4381 (2003) [10.1063/1.1629141]
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Early self-assembled stages in epitaxial SrRuO3 on LaAlO3
Applied physics letters 82, 2497 (2003) [10.1063/1.1566798]
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Statistical model for prebreakdown current jumps and breakdown caused by single traps in magnetic tunnel junctions
Journal of applied physics 94, 2749 - 2751 (2003) [10.1063/1.1592300]
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Coercive field of ultrathin PbZr0.52Ti0.48O3 epitaxial films
Applied physics letters 83, 3356 (2003) [10.1063/1.1621731]
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Surface treatment effects on the thickness dependence of the remanent polarization of PbZr0.52Ti0.48O3 capacitors
Applied physics letters 83, 126 (2003) [10.1063/1.1590431]
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(Ba,Sr)TiO3 thin film growth in a batch processing MOCVD reactor
Journal of the European Ceramic Society 24, 271-276 (2003) [10.1016/S0955-2219(03)00235-8]
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Electrochemical promotion of an oxidation reaction using a proton conductor
Electrochimica acta 48, 3779 - 3788 (2003) [10.1016/S0013-4686(03)00511-5]
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On the use of Pd filters on proton conducting SOFC ceramics
Ionics 9, 297 (2003) [10.1007/BF02375983]
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Roles of alumina in zirconia for functional applications
Journal of the American Ceramic Society 86, 1867 - 1873 (2003) [10.1111/j.1151-2916.2003.tb03574.x]
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Hydrothermal degradation of cubic zirconia
Acta materialia 51, 5123 - 5130 (2003) [10.1016/S1359-6454(03)00362-8]
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Leakage currents in high-permittivity thin films
Applied physics letters 82, 781 (2003) [10.1063/1.1541096]
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Short-time piezoelectric measurements in ferroelectric thin films using a double-beam laser interferometer
Review of scientific instruments 74, 2613 - 2615 (2003) [10.1063/1.1544415]
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SrBi 2Ta 2O 9 ferroelectric thin film capacitors: degradation in a hydrogen ambient
Applied physics / A 77, 571 - 579 (2003) [10.1007/s00339-002-1500-y]
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An interfacial defect layer observed at (Ba,Sr)TiO3/Pt interface
Thin solid films 429, 282 - 285 (2003) [10.1016/S0040-6090(02)01330-5]
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Observation of vacancy defect migration in the cation sublattice of complex oxides by 18O tracer experiments
Physical review letters 90, 105901-1 - 105901-4 (2003) [10.1103/PhysRevLett.90.105901]
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Towards the limit of ferroelectric nanosized grains
Nanotechnology 14, 250 - 253 (2003) [10.1088/0957-4484/14/2/328]
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Frequency and temperature dependence of the relative permittivity in ferroelectrics: Monte-Carlo simulation study
Journal of applied physics 93, 2890 - 2894 (2003) [10.1063/1.1544649]
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Reversible and irreversible polarization processes in ferroelectric ceramics and thin films
Journal of applied physics 93, 1735 - 1742 (2003) [10.1063/1.1535748]
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Introduction and characterization of interfacial defects in SrRuO3/BaTiO3/SrRuO3 multilayer films
Journal of crystal growth 247, 381 (2003) [10.1016/S0022-0248(02)01985-1]
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Phase diagrams and physical properties of single-domain epitaxial Pb(Zr1-xTix)O3 thin films
Physical review / B 67(5), 054107 (2003) [10.1103/PhysRevB.67.054107]
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Grain size dependent grain boundary defect structure: case of doped zirconia
Acta materialia 51, 2539 - 2547 (2003) [10.1016/S1359-6454(03)00052-1]
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Optimizing the giant magnetoresistance of NiFe/Cu/Co pseudo spin-valves prepared by magnetron sputtering
Applied physics letters 82, 1905 - 1907 (2003) [10.1063/1.1563056]
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XRF and SIMS/SNMS analyses of BaxSr1-xTiO3 dielectrics
Analytical and bioanalytical chemistry 375, 906 - 911 (2003) [10.1007/s00216-003-1806-4]
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Origin of soft-mode stiffening and reduced dielectric response in SrTiO3 thin films
Physical review / B 66(23), 235406 (2002) [10.1103/PhysRevB.66.235406]
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Leakage current measurements of STO and BST thin films interpreted by the 'dead' layer model
Integrated ferroelectrics 46, 233 (2002) [10.1080/10584580190044371]
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Simulation of leakage current in thin films with dead layers
Integrated ferroelectrics 47, 197 (2002) [10.1080/10584580190044669]
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Integration of piezoelectric PZT thin films with internal electrodes into an actuator structure for MEMS application
Integrated ferroelectrics 50, 21 - 32 (2002)
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Cationic surface segregation in donor-doped SrTiO3 under oxidizing conditions
Journal of electroceramics 9, 101 - 110 (2002)
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A mathematical-physical model for the charge transport in p-type SrTiO3 ceramics under dc load: Maxwell-Wagner Relaxation
Journal of electroceramics 9, 87 - 100 (2002)
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The interface screening model as origin of imprint in PbZrxTi1-xO3 thin films. II. Numerical simulation and verification
Journal of applied physics 92, 2688 - 2696 (2002)
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Interface-related decrease of the permittivity in PbZrxTi1-xO3 thin films
Applied physics letters 80, 1427 - 1429 (2002) [10.1063/1.1452783]
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Influence of defects on the properties of a 2D ferroelectric: A Monte-Carlo simulation study
Japanese journal of applied physics 41, 7202 - 7210 (2002) [10.1143/JJAP.41.7202]
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Magnon scattering and tunneling through localized states in magnetic tunnel junctions
Journal of applied physics 92, 7261 (2002) [10.1063/1.1516844]
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Ultrathin epitaxial ferroelectric films grown on compressive substrates : competition between the surface and strain effects
Journal of applied physics 91, 2247 (2002) [10.1063/1.1427406]
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Kinetic of phase transformation of SrBi2Ta2O9 deposited by metalorganic decomposition on platinum electrodes
Applied physics letters 81, 4410 (2002) [10.1063/1.1526926]
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The influence of various microscopic techniques on the quantification of stereological structure parameters in waspaloy alloy
Praktische Metallographie 3, 140 (2002)
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Piezoresponse force microscopy of lead titanate nanograins possibly reaching the limit of ferroelectricity
Applied physics letters 81, 5231 - 5233 (2002) [10.1063/1.1534412]
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Electronic structure of some Heusler alloys based on aluminium and tin
Physical review / B 65, 144430 (2002)
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Simulation of the charge transport across grain boundaries in p-type SrTiO3 ceramics under dc load : Debye relaxation and dc bias dependence of long-term conductivity
Journal of applied physics 91, 3037 - 3043 (2002) [10.1063/1.1448404]
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Influence of the film-electrode interface in thin-film capacitors
Ferroelectrics 271, 315 - 320 (2002)
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Simulation of the charge transport across grain boundaries in P-type SrTiO3 ceramics
Ferroelectrics 268, 215 - 220 (2002) [10.1080/713715993]
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Modelling and numerical simulation of the electrical, mechanical and thermal coupled behaviour of MLCs
Journal of the European Ceramic Society 22, 1285 - 1296 (2002) [10.1016/S0955-2219(01)00439-3]
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Relaxors as high-E- materials for multilayer and thin film capacitors
Ferroelectrics 270, 179 - 184 (2002)
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Depolarization-field-mediated 180° switching in ferroelectric thin films with 90 ° domains
Journal of applied physics 80, 1424 - 1426 (2002)
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Structural and morphologic evolution of Pt/Ba0,7Sr0,3TiO3/Pt capacitors with annealing processes
Journal of applied physics 80, 2728 - 2730 (2002)
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Preparation and ageing behavior of chemical-solution-deposited (PbMg(0.33)Nb(0,67)O3)1-x-(PbTiO3)x thin films without seeding layers
Journal of the American Ceramic Society 85, 1867 - 1869 (2002)
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PZT thin films for piezoelectric microactuator applications
Sensors and actuators <Lausanne> / A 97-98, 680 - 684 (2002) [10.1016/S0924-4247(01)00850-0]
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The interface screening model as origin of imprint in PbZrx/Ti1-x/O3 thin films 1 : dopant, illumination, and bias dependence
Journal of applied physics 92, 2680 -2687 (2002)
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Chemical solution deposition of ferroelectric thin films - state-of-the-art and recent trends
Ferroelectrics 267, 293 - 301 (2002) [10.1080/00150190210989]
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Growth of (Ba,Sr)TiO3 thin films by MOCVD : stoichiometry effects
Integrated ferroelectrics 45, 59 - 68 (2002) [10.1080/10584580190043958]
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Grain-boundary effect on the Curie-Weiss law of ferroelectric ceramics and polycrystalline thin films : calculation by the method of effective medium
Journal of electroceramics 9, 5 - 16 (2002) [10.1023/A:1021665300233]
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(Pb1-xBax)TiO3 thin films prepared by liquid delivery MOCVD : influence of the process parameters on film formation and electrical properties
Ferroelectrics 268, 143 - 148 (2002) [10.1080/00150190211044]
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Interfacial layers and their effect on leakage current in MOCVD-deposited SBT thin films
Integrated ferroelectrics 39, 289 (2002)
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Localized metallic conductivity and self-healing during thermal reduction of SrTiO3
Physical review letters 88, 075508-1 (2002) [10.1103/PhysRevLett.88.075508]
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Interfacial and microstructural properties of SrTiO3 thin films grown on Si(001) substrates
Journal of applied physics 92, 7200 - 7205 (2002) [10.1063/1.1522475]
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Imaging three-dimensional polarization in epitaxial polydomain ferroelectric thin films
Journal of applied physics 91, 1477 - 1481 (2002) [10.1063/1.1421219]
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Lattice strain and lattice expansion of the SrRuO3 layers in SrRuO3/PbTr0.52Ti0.48O3/SrRuO3 multilayers thin films
Journal of applied physics 92, 101 (2002)
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Strain relaxation of pseudomorphic Si(1-X)GeX/Si(100) heterostructures after hydrogen or helium ion implantation for virtual substrate fabrication
Nuclear instruments & methods in physics research / B 175/177, 357 - 367 (2001)
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Current transport in ramp-type junctions with engineered interface
Journal of applied physics 89, 3852 (2001) [10.1063/1.1351056]
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Influence of La-doping of YBCO on transport properties of interface-engineered ramp-edge junctions
IEEE transactions on applied superconductivity 11, 795 (2001)
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Effect of the magnetic field orientation on the modulation period of the critical current of ramp-type Josephson junctions
Journal of applied physics 90, 4623 (2001) [10.1063/1.1406969]
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Dielectric breakdown of lithographically patterned tunnel junctions prepared by UV oxidation method
Journal of magnetism and magnetic materials 222, 133 (2001) [10.1016/S0304-8853(00)00359-0]
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Digital reflection-type phase shifter based on a ferroelectric planar capacitor
IEEE microwave and wireless components letters 11, 407 - 409 (2001) [10.1109/7260.959311]
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Preisach model for the simulation of ferroelectric capacitors
Journal of applied physics 89, 3420 - 3425 (2001)
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Magneto-tunneling injection device (MADTID)
Solid state communications 117, 599 (2001)
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Solid state ionics applications in vacuum technology
Solid state ionics 144, 379 - 386 (2001) [10.1016/S0167-2738(01)00974-2]
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High-temperature proton conductors for the injection of hydrogen into a vacuum
Journal of the American Ceramic Society 84, 1996 - 2001 (2001)
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Relaxation mechanisms in ferroelectric thin film capacitors for FeRAM application
Integrated ferroelectrics 33, 39 - 48 (2001) [10.1080/10584580108222286]
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Phase formation and crystal growth of Sr-Bi-Ta-O thin films grown by metalorganic chemical vapour deposition
Journal of materials research 16, 2966 (2001)
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Quantitative characterization of wasopaloy microstructure using various microscopic techniques
Praktische Metallographie / Sonderbände 32, 87 - 90 (2001)
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Influence of the transparency of tunnel barriers in Nb/Al2O3/Al/Al2O3/Nb junctions on transport properties
Physica / C 350, 276 - 290 (2001)
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High temperature conductivity behavior of doped SrTiO3 thin films
Integrated ferroelectrics 33, 363 (2001) [10.1080/10584580108222318]
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Electrical conductivity and segregation effects of doped SrTiO3 thin films at high temperatures
Journal of the European Ceramic Society 21, 1673 - 1676 (2001)
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Grazing incidence diffuse X-ray scattering investigation of the properties of irradiation-induced point defects in solids
Physical review / B 64, 235207-1 - 235207-8 (2001)
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BST thin films grown in a multi-wafer MOCVD reactor
Journal of the European Ceramic Society 21, 1547 - 1551 (2001)
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Water vapor solubility and impedance of the high temperature proton conductor SrZr0.9Y0.1O2.95
Solid state ionics 145, 319 - 324 (2001) [10.1016/S0167-2738(01)00926-2]
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Electrically operated hydrogen and oxygen vacuum leaks using ceramic high-temperature ionic conductors
Journal of vacuum science & technology / A 19, 958 - 962 (2001) [10.1116/1.1355761]
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Tubular high-temperature proton conductors : transport numbers and hydrogen injection
Solid state ionics 139, 95 - 104 (2001) [10.1016/S0167-2738(00)00822-5]
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The mixed Perovskites BaCa(1+x)/3Nb(2-x)/3O3-x/2 (x=0...0.18): proton uptake
Solid state ionics 136/137, 161 - 165 (2001)
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Formation of micro-crystal on the (100) surface of SrTio3 at elevated temperatures
Surface science 460, 112 - 128 (2001)
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Basic investigations on a piezoelectric bending actuator for micro-electro-mechanical applications
Ferroelectrics 35, 269 - 281 (2001)
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Segregation phenomena in thin films of BaTio3
Integrated ferroelectrics 33, 303 -310 (2001) [10.1080/10584580108222312]
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Optimization of Pt/SBT/CeO2SI(100) gate stacks for low voltage ferroelectric field effect devices
Ferroelectrics 34, 47 - 54 (2001)
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Implementation of a ferroelectric capacitor model using the Preisach hysteresis theory
Ferroelectrics 32, 295 - 302 (2001)
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Effects of domain formation on the dielectric properties of ferroelectric thin films
Ferroelectrics 32, 235 - 249 (2001)
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Far infrared and raman spectroscopy of ferroelectric soft mode in SrTiO3 thin films and ceramics
Ferroelectrics 32, 11 - 20 (2001)
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Finite element simulations of interdigital electrode structures on high permitivity thin films
Integrated ferroelectrics 32, 63 - 72 (2001)
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Dielectric properties of Ba(Zr.Ti)O3-based ferroelectrics for capacitor applications
Journal of the American Ceramic Society 84, 759 - 766 (2001)
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Influence of the measurement parameters on the reliability of ferroelectric thin films
Integrated ferroelectrics 32, 1 - 9 (2001)
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Irreversible polarization in donor doped Pb(Zr,Ti)O3
Integrated ferroelectrics 32, 93 - 99 (2001)
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Domain switching, rotation processes and dielectric response of polycrystalline Pb(Zr xTi 1-x)O3 thin films
Journal of physics / D 34, 711 - 716 (2001)
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Relaxation mechanism of ferroelectric switching in (Pb/Zr,Ti)O3 thin films
Journal of applied physics 89, 2332 - 2336 (2001)
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The influence of using various microscopic techniques on the quantification of gamma particles in Waspaloy alloy
Praktische Metallographie 38, 1 - 15 (2001)
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Defects in alkaline earth titanate thin films - the conduction behavior of doped BST
Integrated ferroelectrics 38, 229 - 237 (2001)
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Dielectric relaxation and charge carrier transport mechanisms in (Ba, Sr) TiO3 thin films
Integrated ferroelectrics 38, 249 (2001)
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High temperature proton conductors : hydrogen injection and pumping
Ionics 6, 369 (2000)
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Implementation of a ferroelectric capacitor model using the Preisach hysteresis theory
Integrated ferroelectrics 26, (1999)
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Comparison between standard and chain-type FRAM architecture
Integrated ferroelectrics 26, 1441 - 1450 (1999)
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