Our new study reveals how nanoscale conductive filaments form and evolve in Y2O3-x, a promising material for analog ReRAM
We could follow the ion-removal from SrFeO3 thin films, pushing it in a controlled manner from perovskite to Brownmillerite phase and back.
This roadmap paper contains diverse perspectives on the synthesis, treatments, characterization and application of freestanding oxides.
Our new study shows that amorphous PCMO–based devices can exhibit high conductivity and achieve a higher On/Off ratio than memristive devices made from crystalline PCMO.
The device's programmable temporal dynamics are exploited for event-based vision applications, with the wide span of decay time constants enabling applicability across multiple sensory modalities.
Using pulsed measurements and a new Tunnel-DLTS approach on Pt/SrTiO₃/Nb:SrTiO₃ devices, we show that post-SET volatility is predominantly ionic, while electronic contributions emerge selectively under reverse bias and within specific temperature ranges.
In this work, we demonstrate how band engineering through the choice of electrode material enables control of current levels, switching windows, and switching polarity in area-dependent IGZO memristive devices.
Our new study reveals that phase separation in exsolution-active Ni-doped and (Nb,Ni)-co-doped SrTiO3 thin films begins much earlier than previously thought—right from the initial stages of film growth.
In this study, we developed a simulation framework linking measured I-V characteristics of gradual-switching IGZO-based memristive devices to M-CellNN operation and proposed a symmetrized cell design that compensates for device asymmetry and improves operational stability.
Oliver Artner analyzed the transient SET behavior of HfO2 devices in a 1T1R configuration and demonstrated that residual ion drift during SET affects the level and variability of the programmed states, whilst the variability could be reduced by a controlled decrease of the transistor’s gate voltage.
Here, we employ vertically aligned 2D MoS2 (VAMoS₂) for reliable threshold switching (TS) in resistive switching devices.
In this study led by Kapil Nayak (PGI-7) in collaboration with the University of Twente (Christoph Baeumer), we introduced a novel route for fabricating an atomically defined TiO2-terminated SrTiO3 membranes.
In this study, led by Chirag Sudarshan and John Paul Strachan (PGI-14), we present KA-CIM, a compute-in-memory accelerator for Kolmogorov–Arnold Networks (KANs).
Publications
Other contributions (Conference talks, posters, Master theses, PhD theses)
2026
2025
2024
2023
2022
2021
2020
2019
2018
2017
2016
2015
