In this study led by Muzaffar Maksumov (IET-1), we applied in-operando friction force microscopy during cyclic voltammetry in alkaline electrolyte to track how epitaxial perovskite OER catalysts evolve.
In this study led by Yifan Xu (JCNS-2) and Mai Hamed (JCNS-2, now University of Twente), we explored the switching behavior in nanostructured iron oxide thin films.
In MOCVD MoS2 memristors, a current compliance-regulated Ag filament mechanism is revealed.
A volatile-switching compact model of electrochemical metallization memory cells for neuromorphic architecture is developed and validated by reliable reproduction of device characterization measurements: I-V sweeps, SET kinetics, relaxation dynamics.
This study proposes a compact model for mushroom-type phase-change memory devices that incorporate the shape and size of the phase configurations.
This work demonstrates the growth of vertically aligned MoS2 (VAMoS2) heterostructures with an amorphous SiOx layer, enabling Ag-ion-migration–based threshold switching.
Together with project partners at TU Dresden, a systematic analytical framework to precisely define the parameter spaces necessary for achieving targeted multitasking.
This review reflect a collaborative effort, including a PGI-7 contribution on a systematic model system approach, which we follow for the past few years in our group.
In this work, investigate the resistive switching behavior of hexagonal boron nitride-based memristors with active nickel electrodes under vacuum conditions.
Publications
Other contributions (Conference talks, posters, Master theses, PhD theses)
2026
2025
2024
2023
2022
2021
2020
2019
2018
2017
2016
2015
