3D kinetic Monte Carlo-based investigation of the influence of dopants on the reliability of VCM ReRAM

A new journal article has just been published by N. Kopperberg, D. Genua Noguera and S. Menzel in Journal of Applied Physics 137, 175105 (2025) (https://doi.org/10.1063/5.0262843)

“Using an enhanced 3D Kinetic Monte Carlo model, this study demonstrates how dopants stabilize oxygen vacancy dynamics in valence change mechanism (VCM) ReRAM. The implemented trapping effects significantly reduce variability by increasing the signal-to-noise ratio (SNR) and improve retention by limiting current degradation. These findings provide new insight into dopant-driven reliability optimization for next-generation ReRAM applications.”