64-Point Radix-4 fast Fourier transform (FFT) Implementation in an 8 × 4 1T1R RRAM Array

Published: May 28, 2026

In this study, we developed a simulation framework linking measured I-V characteristics of gradual-switching IGZO-based memristive devices to M-CellNN operation and proposed a symmetrized cell design that compensates for device asymmetry and improves operational stability.

Journal: 2026 IEEE International Symposium on Circuits and Systems (ISCAS), May 24^th -27^th, 2026, Shanghai, China
Authors: S. Jia, X. Liu, R. Waser, S. Wiefels, S. Menzel
DOI: 10.1109/ISCAS66217.2026.11562995
Funding: NEUROTEC 16ME0398K, 16ME0399;
NeuroSys 03ZU2106AA and 03ZU2106AB

Contact

Dr.-Ing. Stephan Menzel

Group Leader - Modeling and simulation of novel electronic devices

• Peter Grünberg Institute (PGI)
• Electronic Materials (PGI-7)

Building 04.6 /
Room R 51

+49 2461/61-5339

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Dr. Stefan Wiefels

Group Leader

• Peter Grünberg Institute (PGI)
• Electronic Materials (PGI-7)

Building 04.6 /
Room 21a

+49 2461/61-5881

E-Mail

Xiaohua Liu

Doctoral researcher

• Peter Grünberg Institute (PGI)
• Electronic Materials (PGI-7)

Building 04.6 /
Room 41a

+49 2461/61-2478

E-Mail