A Device-Level Compact Model for Mushroom-Type Phase Change Memory

3 December 2025

This study proposes a compact model for mushroom-type phase-change memory devices that incorporate the shape and size of the phase configurations. It uniquely features a current leakage path that injects currents at the outer edge of the electrode. This enables a consistent description of the programming and threshold switching mechanisms as well as readout characteristics in one model.

Autors: S. Menzel, B. Kersting, R. W. Ahmad, A. Sebastian, and G. S. Syed
Journal: Adv. Electron. Mater. (2025): e00496
DOI: https://doi.org/10.1002/aelm.202500496
Funding: NEUROTEC 16ME0398K

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Dr.-Ing. Stephan Menzel