Band-engineering in area-dependent InGaZnO(IGZO)-based memristive devices

Published: 14 August 2026

In this work, we demonstrate how band engineering through the choice of electrode material enables control of current levels, switching windows, and switching polarity in area-dependent IGZO memristive devices. By combining electrical characterization, XPS band alignment measurements, and numerical simulations, we show that this control originates from changes in the band alignment and resulting electric-field distribution across the device.

Journal: Front. Nanotechnol. 8:1870683
Authors: Yuan P, Wittberg C, Deuermeier J, Elias Pereira M, Liu Y-P, Mueller DN, Kiazadeh A and Dittmann R
DOI: doi: 10.3389/fnano.2026.1870683
Funding:
NEUROTEC (Grants No 16ME0398K and No 16ME0399),
NeuroSys (03ZU1106AB),
TRR 404 Active-3D (Project Number: 528378584),
PTDC/08132/2022 (OPERA), LA/P/0037/2020, UIDP/50025/2020 and UIDB/50025/2020,
European Horizon Pathfinder Challenge Program, GA No. 101161114 (ELEGANCE)

Contacts

Peijia Yuan

Doctoral researcher

• Peter Grünberg Institute (PGI)
• Electronic Materials (PGI-7)

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Clemens Wittberg

Doctoral Researcher

• Peter Grünberg Institute (PGI)
• Electronic Materials (PGI-7)

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Yen-Po Liu

Postdoctoral researcher

• Peter Grünberg Institute (PGI)
• Electronic Materials (PGI-7)

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Prof. Dr. Regina Dittmann

Director Electronic Materials (PGI-7)

• Peter Grünberg Institute (PGI)
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