New review on '(Pr,Ca)MnO3-Based Memristive Heterostructures: Basic Mechanisms and Applications
Published 26 June 2025
PCMO-based devices represent one of the most important material systems for area-dependent switching, offering key advantages over common filamentary systems, such as minimal Joule heating and gradual switching. These characteristics make them a promising technology for neuromorphic computing and an object of industrial interest, as demonstrated by the development of PCMO-based memory by the company 4DS Memory. Our review in the high impact journal Chemical Reviews (5-Year Impact Factor 20025: 67.5) provides a comprehensive overview of Pr₁₋ₓCaₓMnO₃ (PCMO)-based resistive devices, discussing topics ranging from the defect chemistry and physics of PCMO, the physical and chemical properties of metal–PCMO heterostructures, and the redox-based switching mechanisms, to their neuromorphic and industrial applications.
“Pr1–xCaxMnO3-Based Memristive Heterostructures: Basic Mechanisms and Applications” Max Buczek, Zoe Moos, Alexander Gutsche, Stephan Menzel, Regina Dittmann in Chemical Reviews 2025 https://pubs.acs.org/doi/10.1021/acs.chemrev.4c00813
4DS Memory, a company that develops PCMO-based memory technology: https://www.4dsmemory.com/
Last Modified: 01.07.2025