Intermediate Resistive State in Wafer-Scale MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

30 December 2025

In MOCVD MoS₂ memristors, a current compliance-regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS₂ layers and then laterally along the van der Waals gaps during nonvolatile switching. The lateral filament growth drives the transition from the intermediate resistive state (IRS) to the low resistive state (LRS).

Journal: Advanced Functional Materials, Early view e26682
Autor: Y. Fa, M. Buttberg, K. Ran, R. W. Ahmad, D. Braun, L. Völkel, J. Lee, S. Cruces, B. Macco, B. Canto, H. Lerch, T. Wahlbrink, H. Kalisch, M. Heuken, A. Vescan, J. Mayer, Z. Wang, I. Valov, S. Menzel, M. C. Lemme
DOI: https://doi.org/10.1002/adfm.202526682
Funding:
NeuroSys (Nos. 03ZU1106AA, 03ZU1106AB, 03ZU1106AD, 03ZU2106AA, 03ZU2106AB, 03ZU2106AD, and 03ZU2106AE)
NEUROTEC 2 (Nos. 16ME0398K, 16ME0399, 16ME0400, and 16ME0403)
Project SPP2262 MEMMEA, Project No. 441918103 (MemrisTec)

Contact

Dr.-Ing. Stephan Menzel