From Thin Films to Nanodots: Bottom-Up Integration of Fe3O4 on Nb:STO for Functional Oxide Nanostructures.

23 January 2026

In this study led by Yifan Xu (JCNS-2) and Mai Hamed (JNCS-2, now University of Twente), we explored the switching behavior in nanostructured iron oxide thin films. Using a shadow mask technique, a forest of individual nanopillars of Fe3O4 were synthesized. As probed by local conductivity atomic force microscopy (C-AFM), these nanopillars possess typical resistive switching characteristics and can be addressed individually. Microscopic analysis reveals an insulating Fe2O3 layer forming at the interface between thin film and substrate, which is structurally integrated via a topotactic phase matching and mediates the observed switching behavior.

From Thin Films to Nanodots: Bottom-Up Integration of Fe3O4 on Nb:STO for Functional Oxide Nanostructures.

Journal: Advanced Materials pages: e17938 (2026)
Autors: Yifan Xu, Connie Bednarski-Meinke, Yen-Po Liu, Erkai Wang, Asma Qdemat, Peijia Yuan, Lilian Maria Vogl, Patrick Schöffmann, Thomas Saerbeck, Chenyang Yin, Gerhard Dehm, Felix Gunkel, Regina Dittmann, Oleg Petracic, Mai Hussein Hamed
DOI: https://doi.org/10.1002/adma.202517938
Funding: POF (Memristive Materials and Devices); für JCNS-2 632 - Materials – Quantum, Complex and Functional Materials (POF4-632) (POF4-632) 6G4 - Jülich Centre for Neutron Research (JCNS) (FZJ) (POF4-6G4) (POF4-6G4)

Last Modified: 27.01.2026