Publication alert "Nanoionic memristive phenomena in metal oxides: the valence change mechanism"
06 Aug 2022
In this seminal work, we reviewed the physical mechanism of resistive switching devices based on the valence change mechanism. The review covers the microscopic physics of memristive states and the switching kinetics of VCM devices. It is shown that the switching of all variants of VCM cells relies on the movement of mobile donor ions, which are typically oxygen vacancies or cation interstitials. The work presented was collected over a period of ten years resulting in a comprehensive overview of the topic.
"Nanoionic memristive phenomena in metal oxides: the valence change mechanism" Regina Dittmann, Stephan Menzel, Rainer Waser Advances in Physics Volume 70 (2), 2021, https://doi.org/10.1080/00018732.2022.2084006
Last Modified: 11.02.2025