Publication alert "Reliability Aspects of 28 nm BEOL‐Integrated Resistive Switching Random Access Memory"

As redox-based resistive memory (ReRAM) moves toward large-scale applications, ensuring reliability becomes a key challenge. In collaboration with RWTH Aachen and Infineon Technologies, our research explores the variability, retention, and endurance of valence change mechanism-based memory integrated into 28 nm CMOS technology. We demonstrate high data retention and endurance exceeding 500k cycles at the Mbit scale. Via experiments and Kinetic Monte Carlo (KMC) simulations, we analyze short- and long-term stability, as well as degradation mechanisms while focusing on statistical distributions. Our findings provide valuable insights into the reliability of state-of-the-art ReRAM solutions.

Wiefels, S., Kopperberg, N., Hofmann, K., Otterstedt, J., Wouters, D., Waser, R., & Menzel, S. (2024). Reliability Aspects of 28 nm BEOL‐Integrated Resistive Switching Random Access Memory. physica status solidi (a), 221(22), 2300401. 10.1002/pssa.202300401

Dr. Stefan Wiefels

Dr.-Ing. Stephan Menzel