Publications 2015
Dependence of the SET switching variability on the initial state in HfO x -based ReRAM
Physica status solidi / A 213(3), 316-319 (2015) [10.1002/pssa.201532375]
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A HfO 2 -Based Complementary Switching Crossbar Adder
Advanced Electronic Materials 1(10), n/a - n/a (2015) [10.1002/aelm.201500138]
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Physics of the Switching Kinetics in Resistive Memories
Advanced functional materials 25(40), 6306 - 6325 (2015) [10.1002/adfm.201500825]
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Distribution of Pd clusters on ultrathin, epitaxial TiO x films on Pt 3 Ti(111)
Beilstein journal of nanotechnology 6, 2007 - 2014 (2015) [10.3762/bjnano.6.204]
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Structure Determination of Au on Pt(111) Surface: LEED, STM and DFT Study
Materials 8(6), 2935 - 2952 (2015) [10.3390/ma8062935]
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Neuartige, lernfähige Memristor-Logik: Big Data ohne Energiekollaps
Physik in unserer Zeit 46, 84 (2015)
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Complex behaviour of vacancy point-defects in SrRuO 3 thin films
Physical chemistry, chemical physics 17(2), 1060 - 1069 (2015) [10.1039/C4CP03632H]
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In situ optical characterization of LaAlO 3 epitaxy on SrTiO 3 (001)
epl 109(3), 37006 (2015) [10.1209/0295-5075/109/37006]
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Erratum: In situ optical characterization of LaAlO 3 epitaxy on SrTiO 3 (001)
epl 109(5), 59902 (2015) [10.1209/0295-5075/109/59902]
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X-ray absorption and resonant photoemission studies of electroforming process in Fe-doped SrTiO 3 epitaxial films
X-ray spectrometry 44(5), 339 - 343 (2015) [10.1002/xrs.2637]
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Graphene-Modified Interface Controls Transition from VCM to ECM Switching Modes in Ta/TaO x Based Memristive Devices
Advanced materials 27(40), 6202 - 6207 (2015) [10.1002/adma.201502574]
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Avalanche-Discharge-Induced Electrical Forming in Tantalum Oxide-Based Metal-Insulator-Metal Structures
Advanced functional materials 25(46), 7154–7162 (2015) [10.1002/adfm.201502767]
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Study of Memristive Associative Capacitive Networks for CAM Applications
IEEE journal on emerging and selected topics in circuits and systems 5(2), 153 - 161 (2015) [10.1109/JETCAS.2015.2426491]
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Phase-Change and Redox-Based Resistive Switching Memories
Proceedings of the IEEE 103(8), 1274 - 1288 (2015) [10.1109/JPROC.2015.2433311]
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Understanding filamentary growth in electrochemical metallization memory cells using kinetic Monte Carlo simulations
Nanoscale 7(29), 12673 - 12681 (2015) [10.1039/C5NR02258D]
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Processes and Limitations during Filament Formation and Dissolution in GeS $_{x}$ -based ReRAM Memory Cells
The journal of physical chemistry <Washington, DC> / C 119(32), 18678 - 18685 (2015) [10.1021/acs.jpcc.5b03622]
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Redox Reactions at Cu,Ag/Ta $_{2}$ O $_{5}$ Interfaces and the Effects of Ta $_{2}$ O $_{5}$ Film Density on the Forming Process in Atomic Switch Structures
Advanced functional materials 25(40), 6374 - 6381 (2015) [10.1002/adfm.201500853]
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Resistively Switching Chalcogenides
Advanced functional materials 25(40), 6285 - 6286 (2015) [10.1002/adfm.201503288]
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Polydiacetylene stabilized gold nanoparticles – extraordinary high stability and integration into a nanoelectrode device
RSC Advances 5(125), 102981 - 102992 (2015) [10.1039/C5RA17545C]
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Resistive Switching of a Quasi-Homogeneous Distribution of Filaments Generated at Heat-Treated TiO $_{2}$ (110)-Surfaces
Advanced functional materials 25(40), 6382 - 6389 (2015) [10.1002/adfm.201500855]
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Impact of cation stoichiometry on the early stage of growth of SrTiO3 deposited by pulsed laser deposition
Applied surface science 359, 68 - 72 (2015) [10.1016/j.apsusc.2015.10.072]
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Resistive Switching of Individual, Chemically Synthesized TiO $_{2}$ Nanoparticles
Small 11(48), 6444–6456 (2015) [10.1002/smll.201502100]
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Formation and Movement of Cationic Defects During Forming and Resistive Switching in SrTiO $_{3}$ Thin Film Devices
Advanced functional materials 25(40), 6360 - 6368 (2015) [10.1002/adfm.201500851]
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Realization of Boolean Logic Functionality Using Redox-Based Memristive Devices
Advanced functional materials 25(40), 6414 - 6423 (2015) [10.1002/adfm.201500865]
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Spectromicroscopic insights for rational design of redox-based memristive devices
Nature Communications 6, 8610 - (2015) [10.1038/ncomms9610]
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Low-current operations in 4F $^{2}$ -compatible Ta $_{2}$ O $_{5}$ -based complementary resistive switches
Nanotechnology 26(41), 415202 - (2015) [10.1088/0957-4484/26/41/415202]
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Interfacial and intermolecular interactions determining the rotational orientation of C60 adsorbed on Au(111)
Surface science 642, 11 - 15 (2015) [10.1016/j.susc.2015.07.025]
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Surface Termination Conversion during SrTiO$_{3}$ Thin Film Growth Revealed by X-ray Photoelectron Spectroscopy
Scientific reports 5, 11829 - (2015) [10.1038/srep11829]
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The influence of the local oxygen vacancy concentration on the piezoresponse of strontium titanate thin films
Nanoscale 7(34), 14351-14357 (2015) [10.1039/C5NR03643G]
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Enhanced fullerene–Au(111) coupling in (2√3 × 2√3)R30° superstructures with intermolecular interactions
Beilstein journal of nanotechnology 6, 1421 - 1431 (2015) [10.3762/bjnano.6.147]
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Poole-Frenkel-effect as dominating current mechanism in thin oxide films—An illusion?!
Journal of applied physics 117(21), 215103 - (2015) [10.1063/1.4921949]
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Impact of the cation-stoichiometry on the resistive switching and data retention of SrTiO$_{3}$ thin films
AIP Advances 5(4), 047150 - (2015) [10.1063/1.4919697]
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A Complementary Resistive Switch-Based Crossbar Array Adder
IEEE journal on emerging and selected topics in circuits and systems 5, 64 - 74 (2015) [10.1109/JETCAS.2015.2398217]
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Impedance spectroscopy study of the unipolar and bipolar resistive switching states of atomic layer deposited polycrystalline ZrO $_{2}$ thin films
Physica status solidi / A 212(4), 751 - 766 (2015) [10.1002/pssa.201431489]
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Understanding the conductive channel evolution in Na:WO $_{3−x}$ -based planar devices
Nanoscale 7(14), 6023 - 6030 (2015) [10.1039/C4NR07545E]
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Effect of RESET Voltage on Distribution of SET Switching Time of Bipolar Resistive Switching in a Tantalum Oxide Thin Film
IEEE transactions on electron devices 62(5), 1561 - 1567 (2015) [10.1109/TED.2015.2411748]
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Modeling of Quantized Conductance Effects in Electrochemical Metallization Cells
IEEE transactions on nanotechnology 14(3), 505 - 512 (2015) [10.1109/TNANO.2015.2411774]
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Atomic structure and chemistry of dislocation cores at low-angle tilt grain boundary in SrTiO3 bicrystals
Acta materialia 89, 344 - 351 (2015) [10.1016/j.actamat.2015.02.016]
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Distinct itinerant spin-density waves and local-moment antiferromagnetism in an intermetallic ErPd2Si2 single crystal
Scientific reports 5, 7968 (2015) [10.1038/srep07968]
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Transport limits in defect-engineered LaAlO $_{3}$ /SrTiO $_{3}$ bilayers
Nanoscale 7(3), 1013-1022 (2015) [10.1039/C4NR06272H]
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