Publications 2024
Recommended strategies for quantifying oxygen vacancies with X-ray photoelectron spectroscopy
Journal of the European Ceramic Society 44(15), 116709 (2024) [10.1016/j.jeurceramsoc.2024.116709]
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Nanoswitches: Resistively Switching Chalcogenides for Future Electronics
Physica status solidi / A 221(22), 2400810 (2024) [10.1002/pssa.202400810]
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Surface Speciation in Microwave-Assisted CO Oxidation over Perovskites─The Role of Water and Activation Pretreatment
ACS applied materials & interfaces 16(49), 67662 - 67673 (2024) [10.1021/acsami.4c13212]
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Random Projection‐Based Locality‐Sensitive Hashing in a Memristor Crossbar Array with Stochasticity for Sparse Self‐Attention‐Based Transformer
Advanced electronic materials 10(10), 2300850 (2024) [10.1002/aelm.202300850]
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Roadmap to neuromorphic computing with emerging technologies
APL materials 12(10), 109201 (2024) [10.1063/5.0179424]
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Ion Migration and Redox Reactions in Axial Heterojunction Perovskite CsPb(Br 1– x Cl x ) 3 Nanowire Devices Revealed by Operando Nanofocused X-ray Photoelectron Spectroscopy
ACS nano 18(51), 34763–34775 (2024) [10.1021/acsnano.4c11458]
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Experimental Verification and Evaluation of Non-Stateful Logic Gates in Resistive RAM
IEEE transactions on circuits and systems / 1 1, 1 - 10 (2024) [10.1109/TCSI.2024.3486376]
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Effect of Transistor Transfer Characteristics on the Programming Process in 1T1R Configuration
IEEE transactions on electron devices 71(4), 2423 - 2430 (2024) [10.1109/TED.2024.3370536]
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Thermal stability and coalescence dynamics of exsolved metal nanoparticles at charged perovskite surfaces
Nature Communications 15(1), 9724 (2024) [10.1038/s41467-024-54008-4]
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It's Getting Hot in Here: Hardware Security Implications of Thermal Crosstalk on ReRAMs
IEEE transactions on reliability 1, 1 - 15 (2024) [10.1109/TR.2024.3371589]
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Assessment of functional performance in self-rectifying passive crossbar arrays utilizing sneak path current
Scientific reports 14(1), 24682 (2024) [10.1038/s41598-024-74667-z]
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A flexible and fast digital twin for RRAM systems applied for training resilient neural networks
Scientific reports 14(1), 23695 (2024) [10.1038/s41598-024-73439-z]
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Understanding Stochastic Behavior of Self- Rectifying Memristors for Error-Corrected Physical Unclonable Functions
IEEE transactions on nanotechnology 23, 490 - 499 (2024) [10.1109/TNANO.2024.3413888]
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Reliability effects of lateral filament confinement by nano-scaling the oxide in memristive devices
Nanoscale horizons 9(5), 764 - 774 (2024) [10.1039/D3NH00520H]
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Variability-aware modeling of electrochemical metallization memory cells
Neuromorphic computing and engineering 4(3), 034007 - (2024) [10.1088/2634-4386/ad57e7]
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Evaluation Methods for ReRAM Potentiation on Sub-Nanosecond Timescales
IEEE transactions on electron devices 71(11), 6691 - 6697 (2024) [10.1109/TED.2024.3461676]
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Influence of active electrode impurity on memristive characteristics of ECM devices
Journal of solid state electrochemistry 28(5), 1735 - 1741 (2024) [10.1007/s10008-024-05821-w]
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Synaptogen: A Cross-Domain Generative Device Model for Large-Scale Neuromorphic Circuit Design
IEEE transactions on electron devices 71(9), 5345 - 5353 (2024) [10.1109/TED.2024.3427616]
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Optimization of self-rectifying analog memristors by insertion of an interfacial layer
Applied physics letters 125(8), 083509 (2024) [10.1063/5.0213396]
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Large area pulsed laser deposition of memristive Pr0.7Ca0.3MnO3 heterostructures for neuromorphic computing
Thin solid films 805, 140499 - (2024) [10.1016/j.tsf.2024.140499]
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Resolving the Relaxation of Volatile Valence Change Memory
Advanced electronic materials 10(12), 2400062 (2024) [10.1002/aelm.202400062]
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Theoretico-experimental analysis of bistability in the oscillatory response of a TaOx ReRAM to pulse train stimuli
Frontiers in nanotechnology 6, 1301320 (2024) [10.3389/fnano.2024.1301320]
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Tailoring high-performance catalyst architectures via ‘accessional ionomer coatings’ for anion exchange membrane water electrolysis
International journal of hydrogen energy 49, 591 - 603 (2024) [10.1016/j.ijhydene.2023.08.281]
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Interfacial Thermal Resistive Switching in (Pt,Cr)/SrTiO 3 Devices
ACS applied materials & interfaces 16(12), 15043 - 15049 (2024) [10.1021/acsami.3c19285]
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Analytical modelling of the transport in analog filamentary conductive-metal-oxide/HfO x ReRAM devices
Nanoscale horizons 9(5), 775-784 (2024) [10.1039/D4NH00072B]
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Electrochemical rewiring through quantum conductance effects in single metallic memristive nanowires
Nanoscale horizons 9(3), 416 - 426 (2024) [10.1039/D3NH00476G]
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Oxygen Diffusion in Brownmillerite Sr 2 Fe 2 O 5 is Two-Dimensional: Results from a Molecular Dynamics Study
Chemistry of materials 36(4), 2039 - 2048 (2024) [10.1021/acs.chemmater.3c03032]
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The effect of intrinsic magnetic order on electrochemical water splitting
Applied physics reviews 11(1), 011420 (2024) [10.1063/5.0174662]
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Heterogeneous Integration of Graphene and HfO 2 Memristors
Advanced functional materials 34(19), 2309558 (2024) [10.1002/adfm.202309558]
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La 0.6 Sr 0.4 CoO 3−δ Films Under Deoxygenation: Magnetic And Electronic Transitions Are Apart from The Structural Phase Transition
Advanced functional materials 34(24), 2313208 (2024) [10.1002/adfm.202313208]
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Accurate Evaluation Method for HRS Retention of VCM ReRAM
APL materials 12(3), 031112 (2024) [10.1063/5.0188573]
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Physical Origin of Threshold Switching in Amorphous Chromium‐Doped V 2 O 3
Physica status solidi / A 221(22), 2300405 (2024) [10.1002/pssa.202300405]
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Impact of Non‐Stoichiometric Phases and Grain Boundaries on the Nanoscale Forming and Switching of HfO x Thin Films
Advanced electronic materials 10(4), 2300693 (2024) [10.1002/aelm.202300693]
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Control of Growth Kinetics during Remote Epitaxy of Complex Oxides on Graphene by Pulsed Laser Deposition
APL materials 12(2), 021113 (2024) [10.1063/5.0180001]
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Critical Analysis of Thermodiffusion‐Induced Unipolar Resistive Switching in a Metal‐Oxide‐Metal Memristive Device
Physica status solidi / A 221(22), 2300407 (2024) [10.1002/pssa.202300407]
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Resistive Switching and Current Conduction Mechanisms in Hexagonal Boron Nitride Threshold Memristors with Nickel Electrodes
Advanced functional materials 34(15), 2300428 (2024) [10.1002/adfm.202300428]
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Space charge governs the kinetics of metal exsolution
Nature materials 23, 406-413 (2024) [10.1038/s41563-023-01743-6]
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In Operando Near‐Field Optical Investigation of Memristive Ta 2 O 5 Thin Film Devices with a Graphene Top Electrode
Advanced functional materials 34(16), 2312980 (2024) [10.1002/adfm.202312980]
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Eightwise switching mechanism in memristive SrTiO 3 devices and its implications on the device performance
Physica status solidi / A 221(22), 202300483 (2024) [10.1002/pssa.202300483]
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Dual‐Mode Operation of Epitaxial Hf 0.5 Zr 0.5 O 2 : Ferroelectric and Filamentary‐Type Resistive Switching
Physica status solidi / A 221(22), 202300409 (2024) [10.1002/pssa.202300409]
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Reliability Aspects of 28 nm BEOL-Integrated Resistive Switching Random Access Memory
Physica status solidi / A 221(22), 202300401 (2024) [10.1002/pssa.202300401]
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