Other contributions 2016
Contribution to a book
Physical Deposition Techniques
Memristive Phenomena - From Fundamental to Neuromorphic Computing
Jülich : Forschungszentrum Jülich (2016)
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Contribution to a book
Valence Change in nanoionic oxide cells
Memristive Phenomena - From Fundamental to Neuromorphic Computing
Jülich : Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag 701 pp. (2016)
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Contribution to a book
Scanning Probe Microscopy
Memristive Phenomena - From Fundamental to Neuromorphic Computing
Jülich : Forschungszentrum Jülich 619 pp. (2016)
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Contribution to a book
Lattice disorder in ionic crystals
Memristive Phenomena - From Fundamental Physics to Neuromorphic Computing
98 pp. (2016)
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Contribution to a book
Tuning the Performance of Pt/HfO2/Ti/Pt ReRAM Devices Obtained from Plasma-Enhanced Atomic Layer Deposition for HfO2 Thin Films
Pennington, NJ, ECS transactions 75, 177 - 184 (2016) [10.1149/07506.0177ecst]
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Contribution to a book
Chemical Vapour Deposition Techniques
Memristive Phenomena - From Fundamental to Neuromorphic Computing
Jülich : Forschungszentrum 339 pp. (2016)
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Contribution to a book
Universal Switching Behavior
Resistive Switching - From Fundamentals of Nanoionic Redox Processes to Memristive Device Applications
Weinheim : Wiley-VCH 317 pp. (2016)
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Contribution to a book
Electrochemical Metallization Memories
Resistive Switching / Ielmini, Daniele (Editor) ; Weinheim, Germany : Wiley-VCH Verlag GmbH & Co. KGaA, 2016, ; ISBN: 9783527334179 ; doi:10.1002/9783527680870
Weinheim, Germany : Wiley-VCH Verlag GmbH & Co. KGaA (2016) [10.1002/9783527680870.ch17]
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Contribution to a book
Physics and Chemistry of Nanoionic Cells
Resistive Switching / Ielmini, Daniele (Editor) ISBN: 9783527334179
Weinheim, Germany : Wiley-VCH Verlag GmbH & Co. KGaA 253 pp. (2016) [10.1002/9783527680870.ch9]
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Contribution to a book
Modeling the VCM- and ECM-Type Switching Kinetics
Resistive Switching - From Fundamentals of Nanoionic Redox Processes to Memristive Device Applications
Weinheim : Wiley-VCH (2016)
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Contribution to a book
Phase Transitions
Memristive Phenomena - From Fundamental to Neuromorphic Computing
Jülich : Forschungszentrum Jülich 157 pp. (2016)
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Contribution to a book
(Invited) Mobile Ions, Transport and Redox Processes in Memristive Devices
Pennington, NJ, ECS transactions 75, 27 - 39 (2016) [10.1149/07505.0027ecst]
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Contribution to a book
Electroachemical metallization memories
Memristive Phenomena - From Fundamental to Neuromorphic Computing
Jülich : Forschungszentrum Jülich 677 pp. (2016)
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Contribution to a conference proceedings
Energy dissipation during pulsed switching of strontium-titanate based resistive switching memory devices
ESSDERC 2016 - 46th European Solid-State Device Research Conference, LausanneLausanne, Switzerland, 12 Sep 2016 - 15 Sep 2016
IEEE 160 pp. (2016) [10.1109/ESSDERC.2016.7599611]
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Contribution to a conference proceedings
Ultrafast switching in Ta2O5-based resistive memories
2016 IEEE Silicon Nanoelectronics Workshop (SNW), HonoluluHonolulu, HI, 12 Jun 2016 - 13 Jun 2016
IEEE 1 pp. (2016) [10.1109/SNW.2016.7577995]
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Contribution to a conference proceedings
Lowering forming voltage and forming-free behavior of Ta2O5 ReRAM devices
ESSDERC 2016 - 46th European Solid-State Device Research Conference, LausanneLausanne, Switzerland, 12 Sep 2016 - 15 Sep 2016
IEEE 1 pp. (2016) [10.1109/ESSDERC.2016.7599612]
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Contribution to a conference proceedings
A 2D axisymmetric dynamic drift-diffusion model for numerical simulation of resistive switching phenomena in metal oxides
2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), NurembergNuremberg, Germany, 6 Sep 2016 - 8 Sep 2016
IEEE 145 pp. (2016) [10.1109/SISPAD.2016.7605168]
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Contribution to a conference proceedings
Switching Kinetics of Ta2O5-based ReRAM: Limiting Processes and Ultimate Switching Speed
5th International Conference Smart and Multifunctional Materials Structures & Systems, CIMTEC 2016, PerugiaPerugia, Italy, 5 Jun 2016 - 9 Jun 2016
317 pp. (2016)
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Contribution to a conference proceedings/Contribution to a book
KMC simulation of the electroforming, set and reset processes in redox-based resistive switching devices
2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), NurembergNuremberg, Germany, 6 Sep 2016 - 8 Sep 2016
IEEE 141 pp. (2016) [10.1109/SISPAD.2016.7605167]
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Contribution to a conference proceedings/Contribution to a book
Lowering Forming Voltage and Forming-Free Behavior of Ta2O5 ReRAM Devices
Proceedings of the European Solid-State Device Research Conference
46TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC), LausanneLausanne, Switzerland, 12 Sep 2016 - 15 Sep 2016
164-167 (2016)
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Contribution to a conference proceedings/Contribution to a book
Impact of Quantized Conductance Effects of ReRAM Devices on Neuromorphic Networks
15th International Workshop on Cellular Nanoscale Networks and their Applications (CNNA),, DresdenDresden, Germany, 23 Aug 2016 - 25 Aug 2016
2 pp. (2016)
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Proceedings/Book
Memristive Phenomena –From Fundamental Physics to Neuromorphic Computing
47th IFF Spring School, JülichJülich, Germany, 22 Feb 2016 - 4 Mar 2016
Jülich : Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag, Schriften des Forschungszentrums Jülich. Reihe Schlüsseltechnologien / Key Technologies 113, getr. Zählung (2016)
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