In refereed Journals 2018
KMC Simulation of the Electroforming, Set and Reset Processes in Redox-Based Resistive Switching Devices
IEEE transactions on nanotechnology 17(6), 1181 - 1188 (2018) [10.1109/TNANO.2018.2867904]
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Exploring the Dynamics of Real-World Memristors on the Basis of Circuit Theoretic Model Predictions
IEEE circuits and systems magazine 18(2), 48 - 76 (2018) [10.1109/MCAS.2018.2821760]
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Multi-valued and Fuzzy Logic Realization using TaOx Memristive Devices
Scientific reports 8(1), 8 (2018) [10.1038/s41598-017-18329-3]
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Kogge-Stone Adder Realization using 1S1R Resistive Switching Crossbar Arrays
ACM journal on emerging technologies in computing systems 14(2), Article No. 30 (2018) [10.1145/3183352]
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Degradation Kinetics during Oxygen Electrocatalysis on Perovskite-Based Surfaces in Alkaline Media
Langmuir 34(4), 1347 - 1352 (2018) [10.1021/acs.langmuir.7b03733]
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Interfacial Metal–Oxide Interactions in Resistive Switching Memories
ACS applied materials & interfaces 9(22), 19287 - 19295 (2017) [10.1021/acsami.7b02921]
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Field-Driven Hopping Transport of Oxygen Vacancies in Memristive Oxide Switches with Interface-Mediated Resistive Switching
Physical review applied 10(5), 054025 (2018) [10.1103/PhysRevApplied.10.054025]
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A Theoretical and Experimental View on the Temperature Dependence of the Electronic Conduction through a Schottky Barrier in a Resistively Switching SrTiO 3 -Based Memory Cell
Advanced electronic materials 4(7), 1800062 - (2018) [10.1002/aelm.201800062]
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Principal component analysis: Reveal camouflaged information in x-ray absorption spectroscopy photoemission electron microscopy of complex thin oxide films
Thin solid films 665, 75-84 (2018) [10.1016/j.tsf.2018.09.010]
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A SIMS study of cation and anion diffusion in tantalum oxide
Physical chemistry, chemical physics 20(2), 989 - 996 (2018) [10.1039/C7CP07441G]
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Charge-transfer in B-site-depleted NdGaO 3 /SrTiO 3 heterostructures
APL materials 6(7), 076104 - (2018) [10.1063/1.5038773]
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Improved Switching Stability and the Effect of an Internal Series Resistor in HfO 2 /TiO x Bilayer ReRAM Cells
IEEE transactions on electron devices 65(8), 3229 - 3236 (2018) [10.1109/TED.2018.2849872]
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Oxygen Exchange Processes between Oxide Memristive Devices and Water Molecules
Advanced materials 30(29), 1800957 - (2018) [10.1002/adma.201800957]
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Tailoring the switching performance of resistive switching SrTiO3 devices by SrO interface engineering
Solid state ionics 325, 247 - 250 (2018) [10.1016/j.ssi.2018.09.003]
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UV radiation enhanced oxygen vacancy formation caused by the PLD plasma plume
Scientific reports 8(1), 8846 (2018) [10.1038/s41598-018-27207-5]
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Valence change detection in memristive oxide based heterostructure cells by hard X-ray photoelectron emission spectroscopy
APL materials 6(4), 046106 - (2018) [10.1063/1.5026063]
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Impact of Fe doping on the electronic structure of SrTiO 3 thin films determined by resonant photoemission
The journal of chemical physics 148(15), 154702 - (2018) [10.1063/1.5007928]
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Impact of defect chemistry on cathode performance: A case study of Pr-doped ceria
Solid state ionics 314, 204 - 211 (2018) [10.1016/j.ssi.2017.09.023]
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Nanospectroscopy of Infrared Phonon Resonance Enables Local Quantification of Electronic Properties in Doped SrTiO 3 Ceramics
Advanced functional materials 28(42), 1802834 - (2018) [10.1002/adfm.201802834]
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Addressing Multiple Resistive States of Polyoxovanadates: Conductivity as a Function of Individual Molecular Redox States
Journal of the American Chemical Society 140(48), 16635 - 16640 (2018) [10.1021/jacs.8b08780]
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Processes and Effects of Oxygen and Moisture in Resistively Switching TaO x and HfO x
Advanced electronic materials 4(1), 1700458 - (2018) [10.1002/aelm.201700458]
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Silicon Oxide (SiO x ): A Promising Material for Resistance Switching?
Advanced materials 30(43), 1801187 - (2018) [10.1002/adma.201801187]
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Comprehensive modeling of electrochemical metallization memory cells
Journal of computational electronics 16(4), 1017 - 1037 (2017) [10.1007/s10825-017-1051-2]
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Self-limited single nanowire systems combining all-in-one memristive and neuromorphic functionalities
Nature Communications 9(1), 5151 (2018) [10.1038/s41467-018-07330-7]
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Nanoarchitectonics for Controlling the Number of Dopant Atoms in Solid Electrolyte Nanodots
Advanced materials 30(6), 1703261 - (2018) [10.1002/adma.201703261]
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Crossover From Deterministic to Stochastic Nature of Resistive-Switching Statistics in a Tantalum Oxide Thin Film
IEEE transactions on electron devices 65(10), 4320 - 4325 (2018) [10.1109/TED.2018.2866127]
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Au Nanoparticles as Template for Defect Formation in Memristive SrTiO3 Thin Films
Nanomaterials 8(11), 869 (2018) [10.3390/nano8110869]
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Local surface conductivity of transition metal oxides mapped with true atomic resolution
Nanoscale 10(24), 11498 - 11505 (2018) [10.1039/C8NR02562B]
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Electrically controlled transformation of memristive titanates into mesoporous titanium oxides via incongruent sublimation
Scientific reports 8(1), 3774 (2018) [10.1038/s41598-018-22238-4]
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Electrical nanopatterning of TiO 2 single crystal surfaces in situ via local resistance and potential switching
APL materials 6(6), 066105 - (2018) [10.1063/1.5028424]
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Correlation between the transport mechanisms in conductive filaments inside Ta 2 O 5 -based resistive switching devices and in substoichiometric TaO x thin films
Applied physics letters 112(21), 213504 - (2018) [10.1063/1.5024504]
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Different threshold and bipolar resistive switching mechanisms in reactively sputtered amorphous undoped and Cr-doped vanadium oxide thin films
Journal of applied physics 123(4), 044502 - (2018) [10.1063/1.5006145]
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Field-enhanced route to generating anti-Frenkel pairs in HfO 2
Physical review materials 2(3), 035002 (2018) [10.1103/PhysRevMaterials.2.035002]
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Resistive switching in optoelectronic III-V materials based on deep traps
Scientific reports 8(1), 9483 (2018) [10.1038/s41598-018-27835-x]
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Role of the Electrode Material on the RESET Limitation in Oxide ReRAM Devices
Advanced electronic materials 4(2), 1700243 - (2018) [10.1002/aelm.201700243]
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Reduction of the forming voltage through tailored oxygen non-stoichiometry in tantalum oxide ReRAM devices
Scientific reports 8(1), 10861 (2018) [10.1038/s41598-018-28992-9]
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Pulse wake-up and breakdown investigation of ferroelectric yttrium doped HfO 2
Journal of applied physics 121(15), 154102 - (2017) [10.1063/1.4981893]
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Influence of Dislocations in Transition Metal Oxides on Selected Physical and Chemical Properties
Crystals 8(6), 241 - (2018) [10.3390/cryst8060241]
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Effects of moisture and redox reactions in VCM and ECM resistive switching memories
Journal of physics / D 51(41), 413001 - (2018) [10.1088/1361-6463/aad581]
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Electrochemically prepared oxides for resistive switching devices
Electrochimica acta 274, 103 - 111 (2018) [10.1016/j.electacta.2018.04.087]
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Understanding the Coexistence of Two Bipolar Resistive Switching Modes with Opposite Polarity in Pt/TiO 2 /Ti/Pt Nanosized ReRAM Devices
ACS applied materials & interfaces 10(35), 29766 - 29778 (2018) [10.1021/acsami.8b09068]
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Spring-Like Pseudoelectroelasticity of Monocrystalline Cu 2 S Nanowire
Nano letters 18(8), 5070 - 5077 (2018) [10.1021/acs.nanolett.8b01914]
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