http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Bäumer, C. ; Heisig, T. ; Funck, C. ; Cooper, D. ; Hensling, F. ; Schmitz, C. ; Marchewka, A. ; Menzel, S. ; Schneider, C. M. ; Waser, R. ; Dittmann, R.
Anionic and cationic stoichiometry variations in the conductive filament of valence change memristive devices
2018Faraday Dicussions “New memory paradigms: memristive phenomena and neuromorphic applications, AachenAachen, Germany, 15 Oct 2018 - 17 Oct 20182018-10-152018-10-17 BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Böttger, U. ; von Witzleben, M. ; Vu, X. T. ; Hennen, T. ; Waser, R. ; Salinga, M. ; Menzel, S.
Sub-nanosecond switching properties of Ta2O5- and Ag4In3Sb67Te26-based memories
2018Faraday Dicussions “New memory paradigms: memristive phenomena and neuromorphic applications, AachenAachen, Germany, 15 Oct 2018 - 17 Oct 20182018-10-152018-10-17 BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Cüppers, F. ; Hardtdegen, A. ; Menzel, S. ; Wouters, D. J. ; Waser, R. ; Hoffmann-Eifert, S.
HfO2/TiO2 Memristive Devices as Synapses in Future Artificial Neural Networks
2018Cognitive Computing Conference, HannoverHannover, Germany, 18 Feb 2018 - 20 Feb 20182018-02-182018-02-20 BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Funck, C. ; Dittmann, R. ; Waser, R. ; Menzel, S.
DFTNEGF Current Transport Simulations of Resistive Switching Devices
2018Non-Volatile Memory Technology Symposium 2018, SendaiSendai, Japan, 22 Oct 2018 - 24 Oct 20182018-10-222018-10-24 BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Hardtdegen, A. ; Cüppers, F. ; von Witzleben, M. ; Menzel, S. ; Waser, R. ; Hoffmann-Eifert, S.
Gradual SET and gradual RESET behaviour for HfO2/TiOx bilayer ReRAM cells
2018Faraday Dicussions “New memory paradigms: memristive phenomena and neuromorphic applications, AachenAachen, Germany, 15 Oct 2018 - 17 Oct 20182018-10-152018-10-17 BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Kindsmüller, A. ; Schönhals, A. ; Menzel, S. ; Dittmann, R. ; Waser, R. ; Wouters, D. J.
The influence of interfacial (sub)oxide layers on the properties of pristine resistive switching devices
20182018 Non-Volatile Memory Technology Symposium, NVTMS, SendaiSendai, Japan, 22 Oct 2018 - 24 Oct 20182018-10-222018-10-24 BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Rogala, M. ; Bihlmayer, G. ; Speier, W. ; Rodenbücher, C. ; Dabrowski, P. ; Klusek, Z. ; Szot, K.
Nanofilaments at heat-treated TiO2 (110) for memristive devices and neuromorphic applications
2018CIMTEC 2018 - 8th Forum on New Materials, PerugiaPerugia, Italy, 4 Jun 2018 - 14 Jun 20182018-06-042018-06-14 BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Rosario, C. M. M. ; Thöner, B. ; Schönhals, A. ; Menzel, S. ; Wuttig, M. ; Waser, R. ; Sobolev, N. A. ; Wouters, D.
DIFFERENT TRANSPORT PROPERTIES AT VERY LOW TEMPERATURES BETWEEN SUBSTOICHIOMETRIC TaOx IN ReRAM CONDUCTIVE FILAMENTS AND IN THIN FILMS
2017Non-volatile Memory Technology Symposium, NVMTS, AachenAachen, Germany, 30 Aug 2017 - 1 Sep 20172017-08-302017-09-01 BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Schulze Lammers, B. ; Ebeling, R. ; Dirksen, E. ; Müller, T. J. J. ; Karthäuser, S.
(1) LT-UHV-STM investgations on single benzylnaphthoic diimides adsorbed on metal(111)-surfaces
2018DPG Frühjahrstagung, BerlinBerlin, Germany, 11 Mar 2018 - 16 Mar 20182018-03-112018-03-16 BibTeX | EndNote: XML, Text | RIS