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(left): Electron microscopy image of an InAs nanowire. By means of the gate fingers the electrical transport within the nanowire can be controlled locally. (right): Quantized conductance as a function of gate voltage. The dip found in the first step (cf. orange circle) is a signature for the existence of the helical gap. The inset shows a schematics of the energy momentum dispersion with direction of electron motion depending on their spin direction.