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Figure 1: a) symmetric XRD curve of a Bi2Te3 epilayer grown on a Si (111) substrate, b) atomic force micrograph of the Bi2Te3 surface showing atomic steps, c) height profile of these atomic steps, indicating a constant step height of 10.17 A, which represents the height of a single Bi2Te3 quintuple layer, d) ARPES measurements revealing the linear energy dispersion behavior at the Bi2Te3 surface.