SiGe-TEM.poster.jpeg
TEM image of a 3 nm Si cap/ 15 nm SiGe 50% /10 nm strained SOI structure grown at CEA-Leti and used for p-SiGe MOSFET fabrication.
Last Modified: 24.01.2022
TEM image of a 3 nm Si cap/ 15 nm SiGe 50% /10 nm strained SOI structure grown at CEA-Leti and used for p-SiGe MOSFET fabrication.