Ferroelectric Transistors Power Next-Generation Artificial Neurons
Advanced Functional Materials, Published on 25. April, 2025
Researchers led by Prof. Qing-Tai Zhao at Forschungszentrum Jülich have developed a compact artificial thalamic neuron that closely mimics key brain functions while consuming minimal power. Unlike conventional CMOS designs that require large, power-hungry circuits, the new device exploits the ambipolar switching behavior of ferroelectric Schottky barrier transistors (Fe-SBFETs) to realize both excitatory and inhibitory synapses in an exceptionally simple architecture.
Constructed from just five identical ferroelectric transistors, the artificial thalamic neuron can reproduce tonic and burst modes in a highly efficient manner. Published in Advanced Functional Materials, the study highlights new opportunities for building compact, low-power neural networks with high operating speeds. Beyond neuromorphic computing, such artificial neurons could also enable future medical technologies that replicate or support biological neural functions.
Andreas Grenmyr, et al., „A Novel Approach to Implementing Artificial Thalamic Neurons with Ferroelectric Transistors“ Advanced Functional Materials, 2500512, 2025. https://doi.org/10.1002/adfm.202500512
Contact
Prof. Dr. Qing-Tai Zhao
Group Leader
- Peter Grünberg Institute (PGI)
- Semiconductor Nanoelectronics (PGI-9)
Room 3024