ICSI & ISTDM 2023
The International Conference on Silicon Epitaxy and Heterostructures (ICSI) and the International SiGe Technology and Device Meetings (ISTDM) 2023 will cover topical issues in the area of Group-IV materials and technology research. The meeting point is in Como from 22-25 of May and our Institute is present as both scientific contributors and, in the organization, as Advisory Committee Board via Prof. D. Grützmacher.

PGI-9 will present the latest developments in the fields of GeSn epitaxy photonics and energy harvesting. The presentations are scheduled as follows:
Section Lasing in Group IV Materials: Monday 22nd May at 9:30
- GeSn/SiGeSn micro-rings laser diodes on Si
Teren Liu1*, Lukas Seidel2, Bahareh Marzban3, Jeremy Witzens3, Giovanni Capellini4,5, Michael Oehme2, Detlev Grützmacher1 and Dan Buca1
1 Peter-Grünberg-Institute (PGI-9), and JARA-Fundamentals of Future Information Technologies Forschungszentrum Jülich, Jülich, Germany.
2 Institut für Halbleitertechnik, University of Stuttgart, Stuttgart, Germany.
3 Institute of Integrated Photonics, RWTH Aachen University, Aachen, Germany.
4 IHP-Leibniz Institut für innovative Mikroelektronik, Frankfurt (Oder), Germany.
5 Department of Sciences, Università Roma, Roma, Italy.
Section Epitaxy, Monday 22nd May at 11:00
- Isothermal heteroepitaxy of Ge1-xSnx structures for electronic and photonic applications
Omar Concepción1, Nicolaj B. Søgaard2, Jin-Hee Bae1, Andreas T. Tiedemann1, Yuji Yamamoto3, Zoran Ikonic4, Giovanni Capellini3, Qing T. Zhao1, Dan Buca1, and Detlev Grützmacher1:
1 Peter Gruenberg Institute 9 (PGI-9), Forschungszentrum Juelich, 52425 Juelich, Germany.
2 Interdisciplinary Nanoscience Center (iNANO), Aarhus University, 8000 Aarhus C, Denmark.
3 IHP - Leibniz Institut für innovative Mikroelektronik, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany.
4 Pollard Institute, School of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT, United Kingdom.
Section Thermoelectrics and Energy Harvesting Tuesday, 23rd May, 11:00
- Invited talk: GeSn alloys for low heat recovery
Omar Concepción1, Jhonny Tiscareño1,2 Toma Stoica3, Andrei Galateanu3, Zoran Ikonic4, Michele Virgilio5, Giovanni Capellini6,7, Stefano Roddaro5, Detlev Grützmacher1 and Dan Buca1
1 Peter-Grünberg-Institute (PGI-9), and JARA-Fundamentals of Future Information Technologies Forschungszentrum Jülich, Jülich, Germany
2 Center for Research and Advanced Studies of N.P.I., Mexico City, Mexico
3National Institute of Materials Physics, Magurele, Romania.
4Leeds Pollard Institute, School of Electronic and Electrical Engineering, University of Leeds, UK
5 Department of Physics, University of Pisa, Pisa, Italy
6 IHP-Leibniz Institut für innovative Mikroelektronik, Frankfurt (Oder), Germany
7 Department of Sciences, Università Roma, Roma, Italy