2010
Contribution to a book
GaN and InN Nanowires: Growth and Optoelectronic Properties
Trends in Nanophysics / ; Berlin, Heidelberg : Springer Berlin Heidelberg, 2010, Chapter 4 ; ISSN: 1612-1317=1868-1212 ; ISBN: 978-3-642-12069-5=978-3-642-12070-1 ; doi:10.1007/978-3-642-12070-1
Berlin, Heidelberg : Springer Berlin Heidelberg, Engineering Materials 73 - 96 (2010) [10.1007/978-3-642-12070-1_4]
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Book
DC and RF characterization of NiSi Schottky barrier MOSFETs with dopant segregation
Forschungszentrum, Zentralbibliothek, Jülich, Schriften des Forschungszentrums Jülich. Reihe Information / information 12, IV, 151 S. (2010) = RWTH Aachen, Diss., 2009
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Contribution to a conference proceedings/Contribution to a book
Influence of silicon doping on the SA-MOVPE of InAs nanowires
MRS Proceedings, 2010, 1258, P02-05
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Poster
Selective area growth of InAs nanowires by molecular beam epitaxy
5th Workshop on Nanowire Growth
Seminar, Rome, ItalyRome, Italy, 4 Nov 2010
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Poster
MBE growth and electrical characterization of InAs nanowires
5th Workshop on Nanowire Growth
Seminar, Rome, ItalyRome, Italy, 4 Nov 2010
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Poster
Ga-assisted MBE growth of GaAs nanowires using thin HSQ-layer
5th Workshop on Nanowire Growth
Seminar, Rome, ItalyRome, Italy, 4 Nov 2010
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Poster
Generation of spin polarization in InGaAs by linearly polarized light
Nanoelectronic Days 2010
Seminar, AachenAachen, 4 Oct 2010
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Poster
Ga-assisted MBE growth of GaAs nanowires using thin HSQ-layer
Nanoelectronic Days 2010
Seminar, AachenAachen, 4 Oct 2010
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Poster
Coherent electrical spin manipulation in strained InGaAs
Nanoelectronic Days 2010
Seminar, AachenAachen, 4 Oct 2010
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Poster
MBE growth and electrical characterization on InAs nanowires
Nanoelectronic Days 2010
Seminar, AachenAachen, 4 Oct 2010
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Poster
Electronic phase coherence in InAs nanowires
Nanoelectronic Days 2010
Seminar, AachenAachen, 4 Oct 2010
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Poster
Group III-element assisted growth of InAs nanowires
16th International conference on Molecular Beam Epitaxy
Seminar, BerlinBerlin, 22 Aug 2010
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Poster
Catalyst-free molecular beam epitaxy growth of InAs nanowires
37th International Symposium on Compound Semiconductors
Seminar, Takamatsu, JapanTakamatsu, Japan, 31 May 2010
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Poster
Selective area growth of InAs nanowires by molecular beam epitaxy
DPG Frühjahrstagung 2010
Seminar, RegensburgRegensburg, 21 Mar 2010
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Poster
Electronic phase coherence in InAs nanowires
16th International Winter School 2010
Seminar, Mauterndorf, ÖsterreichMauterndorf, Österreich, 22 Feb 2010
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Conference Presentation
Generation of spin polarization in InGaAs by linearly polarized light
Nanoelectronic Days
Seminar, AachenAachen, 4 Oct 2010
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Conference Presentation
Electronic phase coherence in InAs nanowires
Frühjahrstagung der Deutschen Physikalischen Gesellschaft
Seminar, RegensburgRegensburg, 21 Mar 2010
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Conference Presentation
Selective optical excitation of in-plane and out-o- plane spin polarizations with linearly polarized light in InGaAs
Frühjahrstagung der Deutschen Physikalischen Gesellschaft
Seminar, RegensburgRegensburg, 21 Mar 2010
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Conference Presentation
Time-resolved studies of current induced spin polarization in strained InGaAs/GaAs structures
Frühjahrstagung der Deutschen Physikalischen Gesellschaft
Seminar, RegensburgRegensburg, 21 Mar 2010
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Conference Presentation
In-assisted growth of InAs nanowires by molecular beam epitaxy
Frühjahrstagung der Deutschen Physikalischen Gesellschaft
Seminar, RegensburgRegensburg, 21 Mar 2010
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Talk (non conference)
Comparison of AlGaN/GaN, HFETs and MOSFETs in prospect of oscillator design
Advanced Semiconductors Devices and Microsystems
Seminar, Smolenice, SlovakiaSmolenice, Slovakia, 24 Oct 2010
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Contribution to a conference proceedings/Contribution to a book
Comparison of AlGaN/GaN, HFETs and MOSFETs in prospect of oscillator design
Proceedings of 8th International Conference on Advanced Semiconductors Devices and Microsystems, ed.: / J.Breza, D.Donoval, E.Vavrinsky, ASDAM 2010. - 978-1-4244-8572-7. - S. 159 - 162
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Contribution to a conference proceedings/Contribution to a book
Growth and structural properties of GaAs on Al pseudosubstrates for ultrafast optoelectronics
Proceedings of 8th International Conference on Advanced Semiconductors Devices and Microsystems, ed.: / J.Breza, D.Donoval, E.Vavrinsky, ASDAM 2010. - 978-1-4244-8572-7. - S. 101 - 104
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Talk (non conference)
Growth and structural properties of GaAs on Al pseudosubstrates for ultrafast optoelectronics
Advanced Semiconductors Devices and Microsystems
Seminar, Smolenice, SlovakiaSmolenice, Slovakia, 24 Oct 2010
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Talk (non conference)
Very low Energy Devices: TUNNEL FETs
44. Treffen der Nutzergruppe Ionenimplantationen
Seminar, Bosch, ReutlingenBosch, Reutlingen, 11 Nov 2010
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Talk (non conference) (Invited)
Graphene quantum dots
Seminar Talk at the Heinrich-Heine-Universität Düsseldorf
Seminar, DüsseldorfDüsseldorf, 13 Dec 2010
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Talk (non conference) (Invited)
Graphene quantum dots
Seminar Talk at the MPI Stuttgart
Seminar, StuttgartStuttgart, 8 Dec 2010
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Talk (non conference) (Invited)
Graphene quantum dots
SFB Colloquium at the University of Konstanz
Seminar, KonstanzKonstanz, 15 Jul 2010
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Talk (non conference)
Graphene and nanotube quantum dots
Seminar Talk at the Research Center Jülich
Seminar, JülichJülich, 21 Jun 2010
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Talk (non conference)
Electromechanical blockade in nanotube quantum dots
Seminar Talk at the RWTH Aachen University
Seminar, AachenAachen, 17 Jun 2010
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Talk (non conference) (Invited)
Graphene and Carbon Nanotube Quantum Dots
Seminar Talk at the Universitá degli Studi di Genova
Seminar, Genova, ItalyGenova, Italy, 4 May 2010
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Talk (non conference) (Invited)
Spin States in Graphene Quantum Dots
Seminar Talk at the IEMN
Seminar, Lille, FranceLille, France, 23 Apr 2010
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Talk (non conference) (Invited)
Electromechanical blockade in nanotube quantum dots
Seminar Talk at the Technical University Delft
Seminar, Delft, NetherlandsDelft, Netherlands, 15 Feb 2010
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Talk (non conference) (Invited)
Graphene Quantum Devices
Walter Shottky Seminar at the Technical University Munich
Seminar, MunichMunich, 9 Feb 2010
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Poster
Fabrication of Graphene-Nanotube Hybrid Devices
Graphene International School
Seminar, Cargese, FranceCargese, France, 11 Oct 2010
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Poster
Correlation of quantum transport and tip-enhanced Raman spectroscopy on carbon nanotubes
Nanoelectronic Days 2010
Seminar, AachenAachen, 4 Oct 2010
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Poster
Excited state spectroscopy on a few-layer graphene double quantum dot
Nanoelectronic Days 2010
Seminar, AachenAachen, 4 Oct 2010
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Poster
Energy gaps in graphene constrictions with different aspect ratios
Nanoelectronic Days 2010
Seminar, AachenAachen, 4 Oct 2010
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Poster
Fabrication of Graphene-Nanotube Hybrid Devices
457. WE-Heraus-Seminar on "Graphene Electronics
Seminar, Bad HonnefBad Honnef, 17 Aug 2010
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Poster
Transport through few-layer graphene nanoribbons
457. WE-Heraus-Seminar on "Graphene Electronics
Seminar, Bad HonnefBad Honnef, 17 Aug 2010
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Poster
Transport through few-layer graphene nanoribbons
Eurocarbon Symposium 2010
Seminar, AachenAachen, 13 Jul 2010
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Poster
Nanostructured Graphene Devices
DPG Spring Meeting 2010
Seminar, RegensburgRegensburg, 23 Mar 2010
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Poster
Towards bended edge graphene nanostructures
XXIVrd International Winterschool/Euroconference on Electronic Properties of Novel Materials
Seminar, Kirchberg, ÖsterreichKirchberg, Österreich, 11 Mar 2010
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Conference Presentation
Exited state spectroscopy on a bilayer graphene double quantum dot.
Graphene Brazil 2010
Seminar, Minas Gerais, BrazilMinas Gerais, Brazil, 17 Dec 2010
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Conference Presentation (Invited)
Graphene introduction
Nanoelectronic Days 2010
Seminar, AachenAachen, 4 Oct 2010
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Conference Presentation (Invited)
Spin States in Graphene Quantum Dots
ECI Conference on \"Recent Advances in Graphene and Related Materials\
Seminar, SingaporeSingapore, 1 Aug 2010
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Conference Presentation (Invited)
Graphene Quantum Dots
E-MRS 2010 Spring Meeting
Seminar, Strasbourg, FrankreichStrasbourg, Frankreich, 7 Jun 2010
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Conference Presentation (Invited)
Transport in Graphene Nanostructures
2010 Annual APS March Meeting
Seminar, Portland, USAPortland, USA, 15 Mar 2010
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Conference Presentation (Invited)
Graphene Quantum Devices
21st Edgar Lüscher Seminar
Seminar, Klosters, SwitzerlandKlosters, Switzerland, 6 Feb 2010
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Talk (non conference)
From strained SOI layers to sSi NW: stress and electrical characterization
5th International SiGe Technology and Device Meeting (ISTDm2010)
Seminar, Stockholm, SchwedenStockholm, Schweden, 24 May 2010
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Conference Presentation
Ternary high-k oxides on SiGe and Ge substrates
E-MRS Spring Meeting
Seminar, Strasbourg, FrankreichStrasbourg, Frankreich, 7 Jun 2010
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Conference Presentation
MOSFETs with High Mobility Channel Materials and Higher-k/Metal Gate Stack
10th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT-2010
Seminar, Shanghai, ChinaShanghai, China, 1 Nov 2010
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Conference Presentation (Invited)
High mobility Si-Ge channel and high-k materials for NanoMOSFETs
5th International SiGe Technology and Device Meeting (ISTDM 2010)
Seminar, Stockholm, SchwedenStockholm, Schweden, 24 May 2010
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Conference Presentation (Invited)
High mobility Si-Ge channels and novel high-k materials for NanoMOSFETs
33rd Edition IEEE International Semiconductor Conference, CAS-2010
Seminar, Sinaia, RomaniaSinaia, Romania, 11 Oct 2010
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Conference Presentation (Invited)
Highmobility Si/Si0.5Ge0.5/strained SOI p-MOSFET with HfO2/TiN Gate Stack
10th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT-2010
Seminar, Shanghai, ChinaShanghai, China, 1 Nov 2010
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Contribution to a conference proceedings/Contribution to a book
Highmobility Si/Si0.5Ge0.5/strained SOI p-MOSFET with HfO2/TiN Gate Stack
Proceeding of 10th IEEE International Conference on Solid-State and Integrated Circuit Technology ICSICT-2010. - S. 911 - 913
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Contribution to a conference proceedings/Contribution to a book
MOSFETs with High Mobility Channel Materials and Higher-k/Metal Gate Stack
Proceeding of 10th IEEE International Conference on Solid-State and Integrated Circuit Technology ICSICT-2010. - S. 875 -878
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Contribution to a conference proceedings/Contribution to a book
Highmobility Si/Si0.5Ge0.5/strained SOI p-MOSFET with HfO2/TiN Gate Stack
Proceeding of 10th IEEE International Conference on Solid-State and Integrated Circuit Technology ICSICT-2010. - S. 875 - 878
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Contribution to a conference proceedings/Contribution to a book
Highmobility Si-Ge channels and novel high-k materials for NanoMOSFETs
Proceeding of 33rd Edition IEEE International Semiconductor Conference, CAS 2010. - S. 57 - 62
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Talk (non conference) (Invited)
From Strained Si to strained Si on Insulator (SSOI)
Shanghai Institute of Microsystem and Information Technology, Cinese Academy of Science
Seminar, Shanghai, ChinaShanghai, China, 8 Nov 2010
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Poster
Etching Titanium Nitride gate stacked on high-k dielectric
36th international Conference on Micro & Nano Engineering MNE2010
Seminar, Genoa, ItalyGenoa, Italy, 19 Sep 2010
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Talk (non conference)
Investigations on strained Si channels above buried 2D peridoc SiGe islands integrated into a Field-Effect Transistor
8th International Workshop on Epitaxial Semiconductors on Patterned Substrates and Novel Index Surfaces
Seminar, Como, ItalyComo, Italy, 14 Jun 2010
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Talk (non conference)
Single photon detection by means of SiGe-quantum dot arrays
Advanced Semiconductors Devices and Microsystems
Seminar, Smolenice, SlovakiaSmolenice, Slovakia, 24 Oct 2010
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Talk (non conference)
Characterization of GdScO3 layers by spectroscopic ellipsometry
EMRS
Seminar, Strasbourg, FrankreichStrasbourg, Frankreich, 7 Jun 2010
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Talk (non conference)
Dot-Field Effect Transistor: Using locally strained silicon for MOSFET applications
DPG-Frühjahrstagung
Seminar, RegensburgRegensburg, 21 Mar 2010
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Contribution to a conference proceedings/Contribution to a book
Etching Titanium Nitride gate stacked on high-k dielectric
Proceedings of the 36th International Conference on Micro & Nano Engineering (MNE), Genoa, Italy from 19 to 22 September 2010
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Contribution to a conference proceedings/Contribution to a book
Single photon detection by means of SiGe-quantum dot arrays
Proceedings of 8th International Conference on Advanced Semiconductors Devices and Microsystems, ed.: J.Breza, D.Donoval, E.Vavrinsky, ASDAM 2010. - 978-1-4244-8572-7. - S. 9 - 12
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Talk (non conference)
Comparison of growth behavior for undoped an Si-doped GaAs and InAs nanowires deposited by selective area MOVPE
8th International Workshop on epitaxial semiconductors on patterned substrates and novel surfaces
Seminar, Como, ItalyComo, Italy, 14 Jun 2010
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Conference Presentation
Alternative technique for the preperation of InAs nanowires on (110) GaAs using LP-MOVPE
International Conference on Metalorganic Vapor Phase Epitaxy
Seminar, Incline Village, USAIncline Village, USA, 23 May 2010
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Talk (non conference)
Influence of silicon doping on the SA-MOVPE of InAs nanowires
Material Research Society Spring Meeting
Seminar, San Francisco, USASan Francisco, USA, 5 Apr 2010
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Conference Presentation
Impact of Silicon Doping on InAs nanowire growth by selective area MOVPE
Frühjahrstagung der DPG
Seminar, RegensburgRegensburg, 20 Mar 2010
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Poster
Influence of Si-doping on structure in InAs nanowires
European Crystallographic Meeting
Seminar, DarmstadtDarmstadt, 29 Aug 2010
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Poster
Micromanipulation of individual InAs nanowires
Frühjahrstagung der DPG
Seminar, RegensburgRegensburg, 20 Mar 2010
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Poster
Contact resistivity and nickel silicidation of strained and unstrained silicon nanowires
6th Workshop of the Thematic Network on Silicon-on-Insulator Technolog (EUROSOI)
Seminar, Grenoble, FranceGrenoble, France, 25 Jan 2010
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Conference Presentation
Hole mobilities and electrical characteristics of O-gated silicon nanowire array FETs with 110 and 100 channel orientation
40th European Solid-State Devices Research Conference
Seminar, Seville, SpainSeville, Spain, 14 Sep 2010
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Talk (non conference)
Planar and Nanowire Si-TFETs
Workshop on Simulation and Characterization of Steep-Slope Switches
Seminar, BolognaBologna, 9 Sep 2010
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Conference Presentation
Silicon and Strained Silicon Nanowire Array Tunnel FETs
11thb International Conference on Ultimate Integratuin on Silicon (ULIS)
Seminar, Glasgow, ScotlandGlasgow, Scotland, 18 Mar 2010
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Conference Presentation
High mobility strained SOI MOSFETs with LaScO3/TiN gate stacks fabricated with a replacement gate process
11thb International Conference on Ultimate Integratuin on Silicon (ULIS)
Seminar, Glasgow, ScotlandGlasgow, Scotland, 18 Mar 2010
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Conference Presentation
Si and SiGe based high mobility channel devices
The 2nd Sino-German Workshop of Cooperation
Seminar, Shanghai, ChinaShanghai, China, 17 May 2010
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Conference Presentation (Invited)
Formation and Characterization of Ultra-Thin Ni Silicides on Strained and Unstrained Silicon
IWJT 2010
Seminar, Shanghai, ChinaShanghai, China, 10 May 2010
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Conference Presentation
Formation and characterization of Ultra-Thin NiSi, Ni1-xPtxSi and epitaxial NiSi2on Si(001) substrates
Materials for Advanced Metallization (MAM) Conference
Seminar, Mechelen, BelgiumMechelen, Belgium, 7 Mar 2010
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Conference Presentation
Strained-SiGe p-MOSFET with LaLuO3 as high-k gate dielectric and TiN as metal gate
6th Workshop of the thematic Network on Silicon-on-Insulator Technology (EUROSOI)
Seminar, Grenoble, FranceGrenoble, France, 25 Jan 2010
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Contribution to a conference proceedings/Contribution to a book
Hole mobilities and electrical characteristics of O-gated silicon nanowire array FETs with 110 and 100 channel orientation
Proceedings of 40th European Solid-State Devices Research Conference,13-17. September, Sevilla, Spain, 2010. - S. 372 - 375
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Contribution to a conference proceedings/Contribution to a book
Silicon and Strained Silicon Nanowire Array Tunnel FETs
Proceedings of ULIS (Ultimate Integration on Silicon) 2010. 17-19 March 2010, Glasgow, Scotland. S. 109 - 112
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Contribution to a conference proceedings/Contribution to a book
High mobility strained SOI MOSFETs with LaScO3/TiN gate stacks fabricated with a replacement gate process
Proceedings of ULIS (Ultimate Integration on Silicon) 17-19 March 2010, Glasgow, Scotland. - S. 93 - 96
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Contribution to a conference proceedings/Contribution to a book
Formation and Characterization of Ultra-Thin Ni Silicides on Strained and Unstrained Silicon
Extended Abstracts 2010 International Workshop on Junction Technology (IWJT), 2010. - S. 52 - 56
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Contribution to a conference proceedings/Contribution to a book
Contact resistivity and nickel silicidation of strained and unstrained silicon nanowires
Proceedings of 6th Workshop of the thematic Network on Silicon-on-Insulator Technology, devices and circuits, Grenoble, France, 25-27 January, 2010 (EUROSOI), 2010. - S. 45 - 46
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Contribution to a conference proceedings/Contribution to a book
Strained-SiGe p-MOSFET with LaLuO3 as hihg-k gate dielectric and TiN as metal gate
Proceedings of 6th Workshop of the thematic Network on Silicon-on-Insulator Technology (EUROSOI). - 2010. S. 25 - 26
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Poster
Ion channeling strain measurements of uniaxially strained Si/SiGe heterostructures on Si(100) and Si(110)
17th International Conference on Ion Beam Modification of Materials, IBMM2010
Seminar, Montreal, CanadaMontreal, Canada, 22 Aug 2010
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Conference Presentation
Photon Down-Conversion in Terbium (III)-doped Thin Dielectric Films and Fluorozirconate Glasses for Thin Film Solar Cells
SPIE Photonics Europe Conference
Seminar, Brussels, BelgiumBrussels, Belgium, 12 Apr 2010
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Contribution to a conference proceedings/Contribution to a book
Photon Down-Conversion in Terbium (III)-doped Thin Dielectric Films and Fluorozirconate Glasses for Thin Film Solar Cells
Proceedings of SPIE : Photonics for Solar Energy Systems III, / ed. R.B. Wehrspohn, A.Gombert, Vol. 7725. S. 77250T
[10.1117/12.853939]
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Poster
Strain and charge transport in ion implanted strained Si nanowires on insulator
Material Research Society Spring Meeting (MRS)
Seminar, San Francisco, USASan Francisco, USA, 5 Apr 2010
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Conference Presentation
Effective mass and I-V characterization of biaxial tensile strained SOI MOSFETs
ULIS 2010
Seminar, Glasgow, ScotlandGlasgow, Scotland, 18 Mar 2010
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Contribution to a conference proceedings/Contribution to a book
Effective mass and I-V characterization of biaxially tensile strained SOI MOSFETs
Proceeding of 11th International Conference on Ultimate Integration of Silicon ULIS 2010. S. 1 - 4
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Conference Presentation (Invited)
Amorphous ternary high-k oxides on Si and higher mobility substrates
DPG-Frühjahrstagung
Seminar, RegensburgRegensburg, 23 Mar 2010
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Talk (non conference) (Invited)
Strain effects in perowskites films and multilayers
WE-Heraeus-Seminar Strain in Transition Metal Oxides - Tuning Magnetic and Electric Functionalities
Seminar, Bad HonnefBad Honnef, 15 Mar 2010
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Talk (non conference) (Invited)
Strain effects in perowskites
Workshop Functionality of Oxide Interfaces and Multiferroic materials
Seminar, Kloster IrseeKloster Irsee, 1 Mar 2010
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Talk (non conference)
Verspanntes Silizium, Nanowire- und Schottky- MOSFETs
Kolloquium
Seminar, Universität LeipzigUniversität Leipzig, 4 Feb 2010
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Contribution to a conference proceedings/Contribution to a book
Neutronenpolarisationsanalyse zur Untersuchung komplexer magnetischer Strukturen am Beispiel von TbMnO3-Einkristallen und Dünnschichten
SNI - Deutsche Tagung für Forschung mit Synchrotronstrahlen, Neutronen und Ionenstrahlen an Großgeräten, Freie Universität Berlin, 24. - 26.02.2010, Programm & Abstractbook (2010). - S. 328
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Poster
Neutronenpolarisationsanalyse zur Untersuchung komplexer magnetischer Strukturen am Beispiel von TbMnO3-Einkristallen und Dünnschichten
SNI - Deutsche Tagung für Forschung mit Synchrotronstrahlen, Neutronen und Ionenstrahlen an Großgeräten
Seminar, Freie Universität BerlinFreie Universität Berlin, 24 Feb 2010
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