Nanoelectronic devices - AG Zhao


Our group is engaged in the research of nanoelectronic devices for advanced neuromorphic computing and quantum computing. For these applications, planar, as well as nanowire field-effect transistors (FETs) based on various group IV semiconductors and heterostructures are designed, fabricated and characterized.

Research Topics

  • GeSn nanowire MOSFETs with high charge carrier mobility and low power consumption.
  • CMOS and memory devices for quantum computing at cryogenic temperatures
  • Neuromorphic devices with ferroelectric transistors
  • SiC nanowire devices for mobile applications


Prof. Dr. Qing-Tai Zhao


Building 02.6 / Room 3024

+49 2461/61-4513


group members

Last Modified: 30.05.2023