Nanoelectronic devices - AG Zhao
Our group is engaged in the research of nanoelectronic devices for advanced neuromorphic computing and quantum computing. For these applications, planar, as well as nanowire field-effect transistors (FETs) based on various group IV semiconductors and heterostructures are designed, fabricated and characterized.
- GeSn nanowire MOSFETs with high charge carrier mobility and low power consumption.
- CMOS and memory devices for quantum computing at cryogenic temperatures
- Neuromorphic devices with ferroelectric transistors
- SiC nanowire devices for mobile applications
Prof. Dr. Qing-Tai Zhao
Building 02.6 / Room 3024