Nanoelectronic devices - AG Zhao
About
Our group is engaged in the research of nanoelectronic devices for advanced neuromorphic computing and quantum computing. For these applications, planar, as well as nanowire field-effect transistors (FETs) based on various group IV semiconductors and heterostructures are designed, fabricated and characterized.
Research Topics
- GeSn nanowire MOSFETs with high charge carrier mobility and low power consumption.
- CMOS and memory devices for quantum computing at cryogenic temperatures
- Neuromorphic devices with ferroelectric transistors
- SiC nanowire devices for mobile applications
group members
Publication list
Recent publications
- Yannik Junk, Omar Concepción, Marvin Frauenrath, Jingxuan Sun, Jin Hee Bae, Florian Bärwolf, Andreas Mai, Jean-Michel Hartmann, Detlev Grützmacher, Dan Buca, Qing-Tai Zhao; Enhancing Device Performance with High Electron Mobility GeSn Materials. 22 August 2024 Adv. Electron. Mater. 2024, 2400561 https://doi.org/10.1002/aelm.202400561
- Omar Concepción, Jhonny Tiscareño-Ramírez, Ada Angela Chimienti, Thomas Classen, Agnieszka Anna Corley-Wiciak, Andrea Tomadin, Davide Spirito, Dario Pisignano, Patrizio Graziosi, Zoran Ikonic, Qing Tai Zhao, Detlev Grützmacher, Giovanni Capellini, Stefano Roddaro, Michele Virgilio, Dan Buca; Room Temperature Lattice Thermal Conductivity of GeSn Alloys. 15 May 2024 ACS Appl. Energy Mater, 7, 10, 4394–4401 https://doi.org/10.1021/acsaem.4c00275
- Christian Roemer, Nadine Dersch, Ghader Darbandy, Mike Schwarz, Yi Han, Qing-Tai Zhao, Benjamín Iñíguez, Alexander Kloes. Physics-based compact current model for Schottky barrier transistors at deep cryogenic temperatures including band tail effects and quantum oscillations. February 2024 Solid-State Electronics Volume 212, 108846 https://doi.org/10.1016/j.sse.2023.108846
- Mingshan Liu, Yannik Junk, Yi Han, Dong Yang, Jin Hee Bae, Marvin Frauenrath, Jean-Michel Hartmann, Zoran Ikonic, Florian Bärwolf, Andreas Mai, Detlev Grützmacher, Joachim Knoch, Dan Buca, Qing-Tai Zhao; Vertical GeSn nanowire MOSFETs for CMOS beyond silicon. 25 February 2023 Communications Engineering volume 2, Article number: 7 https://doi.org/10.1038/s44172-023-00059-2
- Omar Concepción, Nicolaj B. Søgaard, Jin-Hee Bae, Yuji Yamamoto, Andreas T. Tiedemann, Zoran Ikonic, Giovanni Capellini, Qing-Tai Zhao, Detlev Grützmacher, Dan Buca; Isothermal Heteroepitaxy of Ge1–xSnx Structures for Electronic and Photonic Applications. 3 April 2023 ACS Appl. Electron. Mater., 5, 4, 2268–2275 https://doi.org/10.1021/acsaelm.3c00112
Last Modified: 14.11.2024