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III-V Nano-Electronics

As the reduction of transistor dimensions to improve performance in CMOS technology reaches its theoretical limits, alternative device concepts and or materials are called for. Here we endeavor to integrate group III-V arsenide and especially InAs lateral nanowires into a normal CMOS layout, which are to serve as the n-channel in the transistors for a future CMOS technology based on novel channel materials. Selective area growth is employed. Currently, we are optimizing growth conditions of the nanowires and are assessing their suitability for advanced CMOS approaches.


Lateral Nanowire

Lateral NanowireSEM and cross sectional TEM images of selectively grown GaInAs and InAs lateral nanowires

Gated quantum dots, based on GaAs/AlGaAs 2-dimensional electron gases, are subject of intense research in the efforts of the Jülich Aachen Research Alliance (JARA) towards spin based quantum information. One of the remaining challenges is the read-out as well as quantum error correction electronics for these qubits. The integration of low-power, low noise and high speed GaAs transistors on the same chip is considered to be a part of the solution. T-gate structures are essential for the reduction of gate resistance in radio frequency (RF) transistors. They are one of the most effective methods to improve the device maximum oscillation frequency (fmax). However, further innovative solutions are called for to reduce Skin-effect losses and improve device performance as the structure sizes diminish and the operation frequencies of the devices become even higher. We developed innovative gate preparation solutions to optimize electrode forms for high frequency device operation. The approach leads to an increase in electrode surface area whilst the volume of the conductive material (usually gold) is minimized.

Skin_effectInnovative gate preparation for multi-level T-gate structures reprinted with permission from M. Mikulics et al., ‘Reduction of skin effect losses in double-level-T-gate structure’, Appl. Phys. Lett., vol. 105, p. 232102, 2014. Copyright 2014, AIP Publishing LLC.

References:
M. Mikulics, H. Hardtdegen, Y. C. Arango, R. Adam, A. Fox, D. Grützmacher, D. Gregušová, S. Stanček, J. Novák, P. Kordoš, Z. Sofer, L. Juul, and M. Marso
Reduction of skin effect losses in double-level-T-gate structure
Appl. Phys. Lett., vol. 105, no. 2014, p. 232102, 2014
DOI: 10.1063/1.4903468.

K. Sladek, F. Haas, M. Heidelmann, D. Park, J. Barthel, F. Dorn, T. E. Weirich, D. Grützmacher, and H. Hardtdegen
From conformal overgrowth to lateral growth of indium arsenide nano structures on silicon substrates by MOVPE
J. Cryst. Growth, vol. 370, pp. 141–145, May 2013
DOI: 10.1016/j.jcrysgro.2012.09.059.

M. Mikulics, R. Adam, Z. Sofer, H. Hardtdegen, S. Stanček, J. Knobbe, M. Kočan, J. Stejskal, D. Sedmidubský, M. Pavlovič, V. Nečas, D. Grützmacher, and M. Marso
Femtosecond and highly sensitive GaAs metal–semiconductor–metal photodetectors grown on aluminum mirrors/pseudo-substrates
Semicond. Sci. Technol., vol. 25, no. 7, p. 075001, Jul. 2010
DOI: 10.1088/0268-1242/25/7/075001.

M. Mikulics, M. Kočan, A. Rizzi, P. Javorka, Z. Sofer, J. Stejskal, M. Marso, P. Kordoš, and H. Lüth
Growth and properties of GaN and AlN layers on silver substrates
Appl. Phys. Lett., vol. 87, no. 21, p. 212109, 2005
DOI: 10.1063/1.2135879.

patents:
M. Mikulics, H. Hardtdegen, and D. Grützmacher
High-Frequency Conductor Having Improved Conductivity
patent specification DE102013006624-B3; WO2014169887-A1, 2014.

Additional Information

Contact:

tba

device design and fabrication,
electrical and optical characterization
Dr. Martin Mikulics

technical issues MOVPE
Konrad Wirtz

Topic:

Methods


 


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