Dr. Hilde Hardtdegen

Research / Work experience

Since 2017 - Staff scientist and group leader at the Ernst Ruska-Centre (ER-C-2) Forschungszentrum Jülich GmbH

1990 - 2017 staff scientist and group leader at the Institute of Thin Films and Interfaces, now Peter Grünberg Institute, Forschungszentrum Jülich GmbH, responsible for metalorganic vapor phase epitaxy and characterization of semiconductor structures for device applications.

1996 visiting scientist at the Institute of Solid State Physics, TU Berlin

1988-1990 post doc position at Institute of Thin films and Ion Technology, Forschungszentrum Jülich GmbH

1988-1989 visiting scientist at the Institute of Semiconductor Technology, RWTH Aachen

1983-1988 research scientist at the Institute of Inorganic Chemistry, RWTH Aachen

Honors and Committees

• Gaede Award of the German Vacuum Society (1997)
• Editor in Chief of “Progress in Crystal Growth and Characterization of Materials” (Elsevier, reviews upon invitation, since 2014)
• Elected by the board of directors Research Center Juelich for the 2 year program “Career Building for Women in Science” (2000)

Program Committees:

EW-MOVPE (since 1998), IC-MOVPE (since 2002), Organization of the 15th EWMOVPE, June 2-5, 2013 in Aachen

Journal Reviewing Responsibilities:

Journal of Applied Physics, Applied Physics Letters, Journal of Crystal Growth, Journal of the Electrochemical Society, Journal of Electronic Materials, Physical Status Solidi, Surface Science, Applied Surface Science, Thin Solid Films, NanoLetters, ACS Nano, Nature, Nanotechnology

Research proposal reviewing responsibilities:

DFG; Deutsche Bundesstiftung Umwelt (DBU); US DoE, Office of Science; ANR (France); FWF Austria; SRDA (Slovakia), TA CR (Czech Republic)

External PhD defense committees:

KTH, Stockholm, Sweden; Aalto University, Helsinki, Finland; Université du Luxembourg, Luxemburg, Alagappa University India

Memberships:

Member of the committee for internal suggestions for improvement at the FZJ

GDCh, DPG, DVG, DGKK

CV_detailed

Selected Publications

FZJ-2023-0312

[1] M. Mikulics, R. Adam, G. Chen, D. Chakraborty, J. Cheng, A. Pericolo, I. Komissarov, D.E. Bürgler, S.F. Heidtfeld, J. Serafini, S. Preble, R. Sobolewski, C.M. Schneider, J. Mayer, H.H. Hardtdegen, Determination of thermal damage threshold in THz photomixers using Raman spectroscopy, Crystals. 13 (2023) 1267. https://doi.org/10.3390/cryst1308126

[FZJ-2022-05598]

[2] M. Mikulics, R. Adam, Roman Sobolewski, S. Heidtfeld, D. Cao, D.E. Bürgler, C.M. Schneider, J. Mayer, H.H. Hardtdegen, Nano-LED driven phase change evolution of layered chalcogenides for Raman spectroscopy investigations, FlatChem. 36 (2022) 100447. https://doi.org/10.1016/j.flatc.2022.100447

FZJ-2022-01764

[3] M. Mikulics, J. Mayer, H.H. Hardtdegen, Cutting-edge nano-LED technology, J. Appl. Phys. 131 (2022) 110903. https://doi.org/10.1063/5.0087279

FZJ-2021-00880

[4] M. Mikulics et al., Conditioning nano-LEDs in arrays by laser-micro-annealing: The key to their performance improvement, Appl. Phys. Lett. 118 (2021) 043101. https://doi.org/10.1063/5.0038070.

[5] M. Mikulics and H.H. Hardtdegen, Fully photon operated transmistor / all-optical switch based on a layered Ge1Sb2Te4 phase change medium, FlatChem. 23 (2020) 100186. https://doi.org/10.1016/j.flatc.2020.100186

FZJ-2017-02120

[6] M. Mikulics et al., P. Kordoš, A. Fox, M. Kočan, H. Lüth, Z. Sofer, H. Hardtdegen, Efficient heat dissipation in AlGaN/GaN heterostructure grown on silver substrate, Appl. Mater. Today. 7 (2017) 134–137. https://doi.org/10.1016/j.apmt.2017.02.008

FZJ-2016-02325

[7] H. Hardtdegen et al., A model structure for interfacial phase change memories: Epitaxial trigonal Ge1Sb2Te4, J. Alloys Compd. 679 (2016) 285–292. https://doi.org/10.1016/j.jallcom.2016.04.013

FZJ-2015-07751

[8] H. Hardtdegen et al., Modern chemical synthesis methods towards low-dimensional phase change structures in the Ge–Sb–Te material system, Prog. Cryst. Growth Charact. Mater. 61 (2015) 27–45. https://doi.org/10.1016/j.pcrysgrow.2015.10.001

[9] N. Thillosen et al.,, The State of Strain in Single GaN Nanocolumns As Derived from Micro-Photoluminescence Measurements, Nano Lett. 6 (2006) 704–708. https://doi.org/10.1021/nl052456q

[10] H. Hardtdegen et al., MOVPE growth of GaAs using a N2 carrier, MOVPE growth of GaAs using a N₂ carrier, J. Cryst. Growth. 124 (1992) 420–426. https://doi.org/10.1016/0022-0248(92)90494-4

A list of publications can be found here: Google Scholar

Patents/granted:

Apparatus for depositing compounds on a substrate by means of metalorganic chemical vapor deposition

H. Hardtdegen, N. Kaluza, Y. Makarov, R. Schmidt, K. Wirtz

EP patent: EP1608794B1 (2009)

KR patent: KR101105629B1 (2012)

High frequency conductor having improved conductivity

M. Mikulics, H. Hardtdegen, D. Grützmacher

US patent: US9735247B2 (2017)

EP patent: EP2987179B1 (2017)

JP patent: JP6244450B2 (2017)

CN: CN105493246B (2018)

Method for optical transmission of a structure into a recording medium

M. Mikulics and H. Hardtdegen

US patent: US9798237B2 (2017)

EP patent: EP2885677B1 (2016)

JP patent: JP6177912B2 (2017)

CN patent: CN104662477B (2017)

KR patent: KR102191802B1 (2020)

Single-photon source suitable for mass production and production method

M. Mikulics and H. Hardtdegen

US patent: US10074771B2 (2018)

EP patent: EP2936628B1 (2017)

JP patent: JP6244371B2 (2017)

CN patent: CN105379033B (2018)

KR patent: KR102283165B1 (2021)

Component having optically active materials

M. Mikulics and H. Hardtdegen

US patent: US11521681B2 (2022)

JP patent: JP7461349B2 (2024)

KR patent: KR102704598B1 (2024)

Patents/applications:

Bauelementstruktureinheit

M. Mikulics and H. Hardtdegen

WO2021115507A1

Vorrichtung für photoneninduzierte Prozesse und/oder Modifikationen von Materialien

M. Mikulics, H. Hardtdegen and J. Mayer

EP4137229A1