Coupled Simulation Methodology for In-Memory Computing Systems

Published: 12 January 2026

In the latest issue of IEEE Journal on Exploratory Solid-State Computational Devices and Circuits (Volume 12, 2025), a research team by Daniel Schön, Christian Owusu-Afriyie, Quang Huy Nguyen, Rainer Leupers, Stephan Menzel and Melvin Galicia published the article "Coupled Simulation Methodology for In-Memory Computing Systems".

Simulations for the development and optimization of future in-memory computing (IMC) systems often face the problem that the modeling of the large system is desired, but at the same time, the effects at the device level should also be taken into account. Such effects could be due to the material properties and geometries of the nanoscale structures, which are too time-consuming to model in a system-level (SL) simulation. For certain problems and applications, however, it is advantageous or even essential that a high-level model responds to the details of a low-level model. In this article, we present a coupled simulation methodology to overcome this challenge. In a case study, we show the integration of a material-level (ML) memristor simulation, serving as a vector–matrix multiplication (VMM) unit, into an SL simulation. The simulation process between two distributed simulators is controlled by a co-simulation interface (CSI), which we present here. With this co-simulation approach, devices and circuits can be optimized for their application, for example, with regard to energy efficiency. It can also be extended to a multilevel simulation flow.

Journal: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits (Volume 12, 2025)
Autors: Daniel Schön, Christian Owusu-Afriyie, Quang Huy Nguyen, Rainer Leupers, Stephan Menzel and Melvin Galicia
DOI: https://doi.org/10.1109/JXCDC.2026.3652426
Funding: Federal Ministry of Education and Research (Grant Number: 16ME0398K and 16ME0399)

Kontakt

Dr.-Ing. Stephan Menzel

Group Leader - Modeling and simulation of novel electronic devices

• Peter Grünberg Institut (PGI)
• Elektronische Materialien (PGI-7)

Gebäude 04.6 /
Raum R 51

+49 2461/61-5339

E-Mail