This study proposes a compact model for mushroom-type phase-change memory devices that incorporate the shape and size of the phase configurations.
This work demonstrates the growth of vertically aligned MoS2 (VAMoS2) heterostructures with an amorphous SiOx layer, enabling Ag-ion-migration–based threshold switching.
Together with project partners at TU Dresden, a systematic analytical framework to precisely define the parameter spaces necessary for achieving targeted multitasking.
This review reflect a collaborative effort, including a PGI-7 contribution on a systematic model system approach, which we follow for the past few years in our group.
In this work, investigate the resistive switching behavior of hexagonal boron nitride-based memristors with active nickel electrodes under vacuum conditions.
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