Reduced Variability in Threshold Switches Using Heterostructures of SiOx and Vertically Aligned MoS

Published: March 12, 2026

2D materials enable controlled ion migration and metal ion filament growth through their van der Waals gaps for memristor device applications. Here, we employ vertically aligned 2D MoS2 (VAMoS₂) for reliable threshold switching (TS) in resistive switching devices. Hererostructures with silicon oxide show faster switching and lower cycle-to-cycle current variability than pure silicon oxide memristors. A variability-aware model attributes this to the formation of ultrathin Ag seed filaments, confined by the VAMoS2 gaps, promising advantages for memory and neuromorphic computing applications.

Journal: Advanced Electronic Materials vol. 12, no. 7, e00800,
Authors: Jimin Lee, Rana Walied Ahmad, Sofía Cruces, Dennis Braun, Lukas Völkel, Ke Ran, Joachim Mayer, Stephan Menzel, Alwin Daus, Max C Lemme
DOI: https://doi.org/10.1002/aelm.202500800
Funding: NEUROTEC: 16ME0398K, 16ME0399, and 16ME0400, Neurosys 03ZU1106AA and 03ZU1106AB, MEMMEA in SPP 2262 MemrisTec (441918103)

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Dr.-Ing. Stephan Menzel

Group Leader - Modeling and simulation of novel electronic devices

• Peter Grünberg Institut (PGI)
• Elektronische Materialien (PGI-7)

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+49 2461/61-5339

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