2010

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Contribution to a book  ;  ;
GaN and InN Nanowires: Growth and Optoelectronic Properties
Trends in Nanophysics / ; Berlin, Heidelberg : Springer Berlin Heidelberg, 2010, Chapter 4 ; ISSN: 1612-1317=1868-1212 ; ISBN: 978-3-642-12069-5=978-3-642-12070-1 ; doi:10.1007/978-3-642-12070-1 Berlin, Heidelberg : Springer Berlin Heidelberg, Engineering Materials 73 - 96 () [10.1007/978-3-642-12070-1_4] BibTeX | EndNote: XML, Text | RIS

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DC and RF characterization of NiSi Schottky barrier MOSFETs with dopant segregation
Jülich, Schriften des Forschungszentrums Jülich. Reihe Information / information 12, IV, 151 S. () = RWTH Aachen, Diss., 2009 OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Contribution to a conference proceedings/Contribution to a book  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;
Influence of silicon doping on the SA-MOVPE of InAs nanowires
MRS Proceedings, 2010, 1258, P02-05 BibTeX | EndNote: XML, Text | RIS

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Selective area growth of InAs nanowires by molecular beam epitaxy
5th Workshop on Nanowire Growth
Seminar, Rome, ItalyRome, Italy, 4 Nov 20102010-11-04
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MBE growth and electrical characterization of InAs nanowires
5th Workshop on Nanowire Growth
Seminar, Rome, ItalyRome, Italy, 4 Nov 20102010-11-04
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Ga-assisted MBE growth of GaAs nanowires using thin HSQ-layer
5th Workshop on Nanowire Growth
Seminar, Rome, ItalyRome, Italy, 4 Nov 20102010-11-04
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Generation of spin polarization in InGaAs by linearly polarized light
Nanoelectronic Days 2010
Seminar, AachenAachen, 4 Oct 20102010-10-04
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Ga-assisted MBE growth of GaAs nanowires using thin HSQ-layer
Nanoelectronic Days 2010
Seminar, AachenAachen, 4 Oct 20102010-10-04
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Coherent electrical spin manipulation in strained InGaAs
Nanoelectronic Days 2010
Seminar, AachenAachen, 4 Oct 20102010-10-04
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MBE growth and electrical characterization on InAs nanowires
Nanoelectronic Days 2010
Seminar, AachenAachen, 4 Oct 20102010-10-04
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Electronic phase coherence in InAs nanowires
Nanoelectronic Days 2010
Seminar, AachenAachen, 4 Oct 20102010-10-04
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Group III-element assisted growth of InAs nanowires
16th International conference on Molecular Beam Epitaxy
Seminar, BerlinBerlin, 22 Aug 20102010-08-22
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Catalyst-free molecular beam epitaxy growth of InAs nanowires
37th International Symposium on Compound Semiconductors
Seminar, Takamatsu, JapanTakamatsu, Japan, 31 May 20102010-05-31
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Selective area growth of InAs nanowires by molecular beam epitaxy
DPG Frühjahrstagung 2010
Seminar, RegensburgRegensburg, 21 Mar 20102010-03-21
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Electronic phase coherence in InAs nanowires
16th International Winter School 2010
Seminar, Mauterndorf, ÖsterreichMauterndorf, Österreich, 22 Feb 20102010-02-22
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http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Conference Presentation  ;  ;  ;  ;  ;  ;  ;  ;
Generation of spin polarization in InGaAs by linearly polarized light
Nanoelectronic Days
Seminar, AachenAachen, 4 Oct 20102010-10-04
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Electronic phase coherence in InAs nanowires
Frühjahrstagung der Deutschen Physikalischen Gesellschaft
Seminar, RegensburgRegensburg, 21 Mar 20102010-03-21
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Selective optical excitation of in-plane and out-o- plane spin polarizations with linearly polarized light in InGaAs
Frühjahrstagung der Deutschen Physikalischen Gesellschaft
Seminar, RegensburgRegensburg, 21 Mar 20102010-03-21
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Time-resolved studies of current induced spin polarization in strained InGaAs/GaAs structures
Frühjahrstagung der Deutschen Physikalischen Gesellschaft
Seminar, RegensburgRegensburg, 21 Mar 20102010-03-21
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In-assisted growth of InAs nanowires by molecular beam epitaxy
Frühjahrstagung der Deutschen Physikalischen Gesellschaft
Seminar, RegensburgRegensburg, 21 Mar 20102010-03-21
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Comparison of AlGaN/GaN, HFETs and MOSFETs in prospect of oscillator design
Advanced Semiconductors Devices and Microsystems
Seminar, Smolenice, SlovakiaSmolenice, Slovakia, 24 Oct 20102010-10-24
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http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Contribution to a conference proceedings/Contribution to a book  ;  ;  ;  ;  ;
Comparison of AlGaN/GaN, HFETs and MOSFETs in prospect of oscillator design
Proceedings of 8th International Conference on Advanced Semiconductors Devices and Microsystems, ed.: / J.Breza, D.Donoval, E.Vavrinsky, ASDAM 2010. - 978-1-4244-8572-7. - S. 159 - 162 BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Contribution to a conference proceedings/Contribution to a book  ;  ;
Growth and structural properties of GaAs on Al pseudosubstrates for ultrafast optoelectronics
Proceedings of 8th International Conference on Advanced Semiconductors Devices and Microsystems, ed.: / J.Breza, D.Donoval, E.Vavrinsky, ASDAM 2010. - 978-1-4244-8572-7. - S. 101 - 104 BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Talk (non conference)  ;  ;
Growth and structural properties of GaAs on Al pseudosubstrates for ultrafast optoelectronics
Advanced Semiconductors Devices and Microsystems
Seminar, Smolenice, SlovakiaSmolenice, Slovakia, 24 Oct 20102010-10-24
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http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Talk (non conference)
Very low Energy Devices: TUNNEL FETs
44. Treffen der Nutzergruppe Ionenimplantationen
Seminar, Bosch, ReutlingenBosch, Reutlingen, 11 Nov 20102010-11-11
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http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Talk (non conference) (Invited)
Graphene quantum dots
Seminar Talk at the Heinrich-Heine-Universität Düsseldorf
Seminar, DüsseldorfDüsseldorf, 13 Dec 20102010-12-13
BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Talk (non conference) (Invited)
Graphene quantum dots
Seminar Talk at the MPI Stuttgart
Seminar, StuttgartStuttgart, 8 Dec 20102010-12-08
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http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Talk (non conference) (Invited)
Graphene quantum dots
SFB Colloquium at the University of Konstanz
Seminar, KonstanzKonstanz, 15 Jul 20102010-07-15
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http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Talk (non conference)
Graphene and nanotube quantum dots
Seminar Talk at the Research Center Jülich
Seminar, JülichJülich, 21 Jun 20102010-06-21
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Electromechanical blockade in nanotube quantum dots
Seminar Talk at the RWTH Aachen University
Seminar, AachenAachen, 17 Jun 20102010-06-17
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http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Talk (non conference) (Invited)
Graphene and Carbon Nanotube Quantum Dots
Seminar Talk at the Universitá degli Studi di Genova
Seminar, Genova, ItalyGenova, Italy, 4 May 20102010-05-04
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http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Talk (non conference) (Invited)
Spin States in Graphene Quantum Dots
Seminar Talk at the IEMN
Seminar, Lille, FranceLille, France, 23 Apr 20102010-04-23
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http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Talk (non conference) (Invited)
Electromechanical blockade in nanotube quantum dots
Seminar Talk at the Technical University Delft
Seminar, Delft, NetherlandsDelft, Netherlands, 15 Feb 20102010-02-15
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Graphene Quantum Devices
Walter Shottky Seminar at the Technical University Munich
Seminar, MunichMunich, 9 Feb 20102010-02-09
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Fabrication of Graphene-Nanotube Hybrid Devices
Graphene International School
Seminar, Cargese, FranceCargese, France, 11 Oct 20102010-10-11
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Correlation of quantum transport and tip-enhanced Raman spectroscopy on carbon nanotubes
Nanoelectronic Days 2010
Seminar, AachenAachen, 4 Oct 20102010-10-04
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Excited state spectroscopy on a few-layer graphene double quantum dot
Nanoelectronic Days 2010
Seminar, AachenAachen, 4 Oct 20102010-10-04
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Energy gaps in graphene constrictions with different aspect ratios
Nanoelectronic Days 2010
Seminar, AachenAachen, 4 Oct 20102010-10-04
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Fabrication of Graphene-Nanotube Hybrid Devices
457. WE-Heraus-Seminar on "Graphene Electronics
Seminar, Bad HonnefBad Honnef, 17 Aug 20102010-08-17
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Transport through few-layer graphene nanoribbons
457. WE-Heraus-Seminar on "Graphene Electronics
Seminar, Bad HonnefBad Honnef, 17 Aug 20102010-08-17
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Transport through few-layer graphene nanoribbons
Eurocarbon Symposium 2010
Seminar, AachenAachen, 13 Jul 20102010-07-13
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Nanostructured Graphene Devices
DPG Spring Meeting 2010
Seminar, RegensburgRegensburg, 23 Mar 20102010-03-23
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Towards bended edge graphene nanostructures
XXIVrd International Winterschool/Euroconference on Electronic Properties of Novel Materials
Seminar, Kirchberg, ÖsterreichKirchberg, Österreich, 11 Mar 20102010-03-11
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Exited state spectroscopy on a bilayer graphene double quantum dot.
Graphene Brazil 2010
Seminar, Minas Gerais, BrazilMinas Gerais, Brazil, 17 Dec 20102010-12-17
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http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Conference Presentation (Invited)
Graphene introduction
Nanoelectronic Days 2010
Seminar, AachenAachen, 4 Oct 20102010-10-04
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Spin States in Graphene Quantum Dots
ECI Conference on \"Recent Advances in Graphene and Related Materials\
Seminar, SingaporeSingapore, 1 Aug 20102010-08-01
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Graphene Quantum Dots
E-MRS 2010 Spring Meeting
Seminar, Strasbourg, FrankreichStrasbourg, Frankreich, 7 Jun 20102010-06-07
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Transport in Graphene Nanostructures
2010 Annual APS March Meeting
Seminar, Portland, USAPortland, USA, 15 Mar 20102010-03-15
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Graphene Quantum Devices
21st Edgar Lüscher Seminar
Seminar, Klosters, SwitzerlandKlosters, Switzerland, 6 Feb 20102010-02-06
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http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Talk (non conference)  ;  ;  ;  ;  ;  ;
From strained SOI layers to sSi NW: stress and electrical characterization
5th International SiGe Technology and Device Meeting (ISTDm2010)
Seminar, Stockholm, SchwedenStockholm, Schweden, 24 May 20102010-05-24
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Ternary high-k oxides on SiGe and Ge substrates
E-MRS Spring Meeting
Seminar, Strasbourg, FrankreichStrasbourg, Frankreich, 7 Jun 20102010-06-07
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MOSFETs with High Mobility Channel Materials and Higher-k/Metal Gate Stack
10th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT-2010
Seminar, Shanghai, ChinaShanghai, China, 1 Nov 20102010-11-01
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http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Conference Presentation (Invited)  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;
High mobility Si-Ge channel and high-k materials for NanoMOSFETs
5th International SiGe Technology and Device Meeting (ISTDM 2010)
Seminar, Stockholm, SchwedenStockholm, Schweden, 24 May 20102010-05-24
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High mobility Si-Ge channels and novel high-k materials for NanoMOSFETs
33rd Edition IEEE International Semiconductor Conference, CAS-2010
Seminar, Sinaia, RomaniaSinaia, Romania, 11 Oct 20102010-10-11
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Highmobility Si/Si0.5Ge0.5/strained SOI p-MOSFET with HfO2/TiN Gate Stack
10th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT-2010
Seminar, Shanghai, ChinaShanghai, China, 1 Nov 20102010-11-01
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http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Contribution to a conference proceedings/Contribution to a book  ;  ;  ;  ;  ;  ;  ;  ;
Highmobility Si/Si0.5Ge0.5/strained SOI p-MOSFET with HfO2/TiN Gate Stack
Proceeding of 10th IEEE International Conference on Solid-State and Integrated Circuit Technology ICSICT-2010. - S. 911 - 913 BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Contribution to a conference proceedings/Contribution to a book  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;
MOSFETs with High Mobility Channel Materials and Higher-k/Metal Gate Stack
Proceeding of 10th IEEE International Conference on Solid-State and Integrated Circuit Technology ICSICT-2010. - S. 875 -878 BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Contribution to a conference proceedings/Contribution to a book  ;  ;  ;  ;  ;  ;  ;  ;
Highmobility Si/Si0.5Ge0.5/strained SOI p-MOSFET with HfO2/TiN Gate Stack
Proceeding of 10th IEEE International Conference on Solid-State and Integrated Circuit Technology ICSICT-2010. - S. 875 - 878 BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Contribution to a conference proceedings/Contribution to a book  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;
Highmobility Si-Ge channels and novel high-k materials for NanoMOSFETs
Proceeding of 33rd Edition IEEE International Semiconductor Conference, CAS 2010. - S. 57 - 62 BibTeX | EndNote: XML, Text | RIS

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From Strained Si to strained Si on Insulator (SSOI)
Shanghai Institute of Microsystem and Information Technology, Cinese Academy of Science
Seminar, Shanghai, ChinaShanghai, China, 8 Nov 20102010-11-08
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Etching Titanium Nitride gate stacked on high-k dielectric
36th international Conference on Micro & Nano Engineering MNE2010
Seminar, Genoa, ItalyGenoa, Italy, 19 Sep 20102010-09-19
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http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Talk (non conference)  ;  ;  ;  ;  ;  ;  ;  ;
Investigations on strained Si channels above buried 2D peridoc SiGe islands integrated into a Field-Effect Transistor
8th International Workshop on Epitaxial Semiconductors on Patterned Substrates and Novel Index Surfaces
Seminar, Como, ItalyComo, Italy, 14 Jun 20102010-06-14
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http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Talk (non conference)  ;  ;  ;  ;  ;  ;
Single photon detection by means of SiGe-quantum dot arrays
Advanced Semiconductors Devices and Microsystems
Seminar, Smolenice, SlovakiaSmolenice, Slovakia, 24 Oct 20102010-10-24
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Characterization of GdScO3 layers by spectroscopic ellipsometry
EMRS
Seminar, Strasbourg, FrankreichStrasbourg, Frankreich, 7 Jun 20102010-06-07
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Dot-Field Effect Transistor: Using locally strained silicon for MOSFET applications
DPG-Frühjahrstagung
Seminar, RegensburgRegensburg, 21 Mar 20102010-03-21
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http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Contribution to a conference proceedings/Contribution to a book  ;  ;  ;
Etching Titanium Nitride gate stacked on high-k dielectric
Proceedings of the 36th International Conference on Micro & Nano Engineering (MNE), Genoa, Italy from 19 to 22 September 2010 BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Contribution to a conference proceedings/Contribution to a book  ;  ;  ;  ;  ;  ;
Single photon detection by means of SiGe-quantum dot arrays
Proceedings of 8th International Conference on Advanced Semiconductors Devices and Microsystems, ed.: J.Breza, D.Donoval, E.Vavrinsky, ASDAM 2010. - 978-1-4244-8572-7. - S. 9 - 12 BibTeX | EndNote: XML, Text | RIS

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Comparison of growth behavior for undoped an Si-doped GaAs and InAs nanowires deposited by selective area MOVPE
8th International Workshop on epitaxial semiconductors on patterned substrates and novel surfaces
Seminar, Como, ItalyComo, Italy, 14 Jun 20102010-06-14
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Alternative technique for the preperation of InAs nanowires on (110) GaAs using LP-MOVPE
International Conference on Metalorganic Vapor Phase Epitaxy
Seminar, Incline Village, USAIncline Village, USA, 23 May 20102010-05-23
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Influence of silicon doping on the SA-MOVPE of InAs nanowires
Material Research Society Spring Meeting
Seminar, San Francisco, USASan Francisco, USA, 5 Apr 20102010-04-05
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Impact of Silicon Doping on InAs nanowire growth by selective area MOVPE
Frühjahrstagung der DPG
Seminar, RegensburgRegensburg, 20 Mar 20102010-03-20
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Influence of Si-doping on structure in InAs nanowires
European Crystallographic Meeting
Seminar, DarmstadtDarmstadt, 29 Aug 20102010-08-29
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Micromanipulation of individual InAs nanowires
Frühjahrstagung der DPG
Seminar, RegensburgRegensburg, 20 Mar 20102010-03-20
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Contact resistivity and nickel silicidation of strained and unstrained silicon nanowires
6th Workshop of the Thematic Network on Silicon-on-Insulator Technolog (EUROSOI)
Seminar, Grenoble, FranceGrenoble, France, 25 Jan 20102010-01-25
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Hole mobilities and electrical characteristics of O-gated silicon nanowire array FETs with 110 and 100 channel orientation
40th European Solid-State Devices Research Conference
Seminar, Seville, SpainSeville, Spain, 14 Sep 20102010-09-14
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Planar and Nanowire Si-TFETs
Workshop on Simulation and Characterization of Steep-Slope Switches
Seminar, BolognaBologna, 9 Sep 20102010-09-09
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Silicon and Strained Silicon Nanowire Array Tunnel FETs
11thb International Conference on Ultimate Integratuin on Silicon (ULIS)
Seminar, Glasgow, ScotlandGlasgow, Scotland, 18 Mar 20102010-03-18
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High mobility strained SOI MOSFETs with LaScO3/TiN gate stacks fabricated with a replacement gate process
11thb International Conference on Ultimate Integratuin on Silicon (ULIS)
Seminar, Glasgow, ScotlandGlasgow, Scotland, 18 Mar 20102010-03-18
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Si and SiGe based high mobility channel devices
The 2nd Sino-German Workshop of Cooperation
Seminar, Shanghai, ChinaShanghai, China, 17 May 20102010-05-17
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Formation and Characterization of Ultra-Thin Ni Silicides on Strained and Unstrained Silicon
IWJT 2010
Seminar, Shanghai, ChinaShanghai, China, 10 May 20102010-05-10
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Formation and characterization of Ultra-Thin NiSi, Ni1-xPtxSi and epitaxial NiSi2on Si(001) substrates
Materials for Advanced Metallization (MAM) Conference
Seminar, Mechelen, BelgiumMechelen, Belgium, 7 Mar 20102010-03-07
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Strained-SiGe p-MOSFET with LaLuO3 as high-k gate dielectric and TiN as metal gate
6th Workshop of the thematic Network on Silicon-on-Insulator Technology (EUROSOI)
Seminar, Grenoble, FranceGrenoble, France, 25 Jan 20102010-01-25
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http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Contribution to a conference proceedings/Contribution to a book  ;  ;  ;
Hole mobilities and electrical characteristics of O-gated silicon nanowire array FETs with 110 and 100 channel orientation
Proceedings of 40th European Solid-State Devices Research Conference,13-17. September, Sevilla, Spain, 2010. - S. 372 - 375 BibTeX | EndNote: XML, Text | RIS

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Silicon and Strained Silicon Nanowire Array Tunnel FETs
Proceedings of ULIS (Ultimate Integration on Silicon) 2010. 17-19 March 2010, Glasgow, Scotland. S. 109 - 112 BibTeX | EndNote: XML, Text | RIS

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High mobility strained SOI MOSFETs with LaScO3/TiN gate stacks fabricated with a replacement gate process
Proceedings of ULIS (Ultimate Integration on Silicon) 17-19 March 2010, Glasgow, Scotland. - S. 93 - 96 BibTeX | EndNote: XML, Text | RIS

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Formation and Characterization of Ultra-Thin Ni Silicides on Strained and Unstrained Silicon
Extended Abstracts 2010 International Workshop on Junction Technology (IWJT), 2010. - S. 52 - 56 BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Contribution to a conference proceedings/Contribution to a book  ;  ;  ;  ;
Contact resistivity and nickel silicidation of strained and unstrained silicon nanowires
Proceedings of 6th Workshop of the thematic Network on Silicon-on-Insulator Technology, devices and circuits, Grenoble, France, 25-27 January, 2010 (EUROSOI), 2010. - S. 45 - 46 BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Contribution to a conference proceedings/Contribution to a book  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;
Strained-SiGe p-MOSFET with LaLuO3 as hihg-k gate dielectric and TiN as metal gate
Proceedings of 6th Workshop of the thematic Network on Silicon-on-Insulator Technology (EUROSOI). - 2010. S. 25 - 26 BibTeX | EndNote: XML, Text | RIS

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Ion channeling strain measurements of uniaxially strained Si/SiGe heterostructures on Si(100) and Si(110)
17th International Conference on Ion Beam Modification of Materials, IBMM2010
Seminar, Montreal, CanadaMontreal, Canada, 22 Aug 20102010-08-22
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Photon Down-Conversion in Terbium (III)-doped Thin Dielectric Films and Fluorozirconate Glasses for Thin Film Solar Cells
SPIE Photonics Europe Conference
Seminar, Brussels, BelgiumBrussels, Belgium, 12 Apr 20102010-04-12
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Photon Down-Conversion in Terbium (III)-doped Thin Dielectric Films and Fluorozirconate Glasses for Thin Film Solar Cells
Proceedings of SPIE : Photonics for Solar Energy Systems III, / ed. R.B. Wehrspohn, A.Gombert, Vol. 7725. S. 77250T [10.1117/12.853939] BibTeX | EndNote: XML, Text | RIS

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Strain and charge transport in ion implanted strained Si nanowires on insulator
Material Research Society Spring Meeting (MRS)
Seminar, San Francisco, USASan Francisco, USA, 5 Apr 20102010-04-05
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Effective mass and I-V characterization of biaxial tensile strained SOI MOSFETs
ULIS 2010
Seminar, Glasgow, ScotlandGlasgow, Scotland, 18 Mar 20102010-03-18
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http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Contribution to a conference proceedings/Contribution to a book  ;  ;  ;  ;  ;
Effective mass and I-V characterization of biaxially tensile strained SOI MOSFETs
Proceeding of 11th International Conference on Ultimate Integration of Silicon ULIS 2010. S. 1 - 4 BibTeX | EndNote: XML, Text | RIS

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Amorphous ternary high-k oxides on Si and higher mobility substrates
DPG-Frühjahrstagung
Seminar, RegensburgRegensburg, 23 Mar 20102010-03-23
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Strain effects in perowskites films and multilayers
WE-Heraeus-Seminar Strain in Transition Metal Oxides - Tuning Magnetic and Electric Functionalities
Seminar, Bad HonnefBad Honnef, 15 Mar 20102010-03-15
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Strain effects in perowskites
Workshop Functionality of Oxide Interfaces and Multiferroic materials
Seminar, Kloster IrseeKloster Irsee, 1 Mar 20102010-03-01
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Verspanntes Silizium, Nanowire- und Schottky- MOSFETs
Kolloquium
Seminar, Universität LeipzigUniversität Leipzig, 4 Feb 20102010-02-04
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Neutronenpolarisationsanalyse zur Untersuchung komplexer magnetischer Strukturen am Beispiel von TbMnO3-Einkristallen und Dünnschichten
SNI - Deutsche Tagung für Forschung mit Synchrotronstrahlen, Neutronen und Ionenstrahlen an Großgeräten, Freie Universität Berlin, 24. - 26.02.2010, Programm & Abstractbook (2010). - S. 328 BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Poster  ;  ;  ;  ;  ;  ;  ;  ;
Neutronenpolarisationsanalyse zur Untersuchung komplexer magnetischer Strukturen am Beispiel von TbMnO3-Einkristallen und Dünnschichten
SNI - Deutsche Tagung für Forschung mit Synchrotronstrahlen, Neutronen und Ionenstrahlen an Großgeräten
Seminar, Freie Universität BerlinFreie Universität Berlin, 24 Feb 20102010-02-24
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Letzte Änderung: 20.05.2022