Jülich Quantum Computing Seminar: Double Dot Charge Stability Diagram Simulation and Analysis - Fabian Hader, ZEA-2

Online Talk

The "Jülich Quantum Computing Seminar" will take place every three weeks on Tuesdays at 14:00 CET via video conference and is intended to promote cooperation between the working groups conducting research in the field of quantum computing and quantum information at various institutes at Forschungszentrum Jülich.

Access details:

Zoom Link: https://us02web.zoom.us/j/81314526642?pwd=YTFXVDBnQUxibVlxUnZjbEJwbGpSQT09

Meeting ID: 813 1452 6642
Passcode: 01

Double Dot Charge Stability Diagram Simulation and Analysis

Abstract: 

Automating the tuning of semiconductor spin qubits requires a robust analysis of data obtained during the calibration process. Among these, the charge stability diagrams (CSDs) allow to infer the electron occupancy of the dot(s) based on charge transitions appearing as edges. The detection of these edges poses a well-known challenge. Hence, different approaches, both traditional and machine learning, are explored by several research groups. To achieve better detection, we have previously investigated noise reduction methods [1] and proposed an approach for noise-sensitive automatic tuning of sensor dots [2], which are typically used to measure CSDs.

In our current work, we try to improve the development and benchmarking of detection algorithms by a fast CSD simulation approach that aims at realistic data without the need for physical models.

Additionally to our geometric simulation model, we present preliminary results of machine learning approaches trained exclusively with our simulation.

[1] S. Fleitmann et al., "Noise Reduction Methods for Charge Stability Diagrams of Double Quantum Dots" in IEEE Transactions on Quantum Engineering, vol. 3, pp. 1-19, 2022, Art no. 5500119, doi: 10.1109/TQE.2022.3165968

[2] F. Hader et al., "On Noise-Sensitive Automatic Tuning of Gate-Defined Sensor Dots" in IEEE Transactions on Quantum Engineering, vol. 4, pp. 1-18, 2023, Art no. 5500218, doi: 10.1109/TQE.2023.3255743