Bilayer Ohmic Electrode Engineering in TaOX ReRAM Devices

Published 2 July 2025

In our latest work, we improve TaOx-based ReRAM by engineering a novel bilayer ohmic electrode structure. This approach reduces the forming voltage, significantly improves switching speed and long-term stability, and lowers energy consumption—without compromising other key metrics. We also propose a modified switching mechanism based on the OE’s material properties. Our findings highlight how predictive, materials-driven design can unlock more reliable and energy-efficient ReRAM devices.”

Reference: G. Paul, T. Glint, S. Menzel and V. Rana, "Bilayer Ohmic Electrode Engineering in TaOX ReRAM Devices," in IEEE Electron Device Letters, doi: 10.1109/LED.2025.3585469.

Contact

Godwin Paul

Tom Glint Issac

Dr.-Ing. Stephan Menzel

Dr. Vikas Rana