A Comprehensive Compact Model for Multilevel Switching in TaOx-Based Memristive 1T-1R Cells

Published 17 July 2025

In the latest issue of IEEE Access (Vol. 13, pp. 127280–127291), a research team by Seokki Son, Ankit Bende, Daniel Schön, Rana Walied Ahmad, Dennis Nielinger, and Stephan Menzel published the article "A Comprehensive Compact Model for Multilevel Switching in TaOx-Based Memristive 1T-1R Cells".

Filamentary switching memristive devices based on the valence change mechanism (VCM) are promising for non-volatile memory applications due to their ability to store multiple resistance states within a single device. To facilitate the integration into circuits, this study presents an advanced compact model designed for multilevel switching in the VCM devices serially connected with transistors in a 1T-1R configuration. This model is an extension of the existing JART (Jülich Aachen Resistive Switching Tools) VCM v1b model, by incorporating state-dependent effective thermal resistance (R_th,eff) based on an electro-thermal continuum model. This enables precise modeling of multilevel behavior and includes the variability in switching cycles to reflect experimental conditions. The validation with TaOx-based VCM devices co-integrated with 180 nm n-MOS transistors demonstrates the model’s accuracy, achieving consistent multilevel programming across 7-states and capturing cycle-to-cycle variability effectively. This model offers a robust tool for designing reliable, high-density multilevel ReRAM memory system.

S. Son, A. Bende, D. Schön, R. Walied Ahmad, D. Nielinger, and V. Rana, and S. Menzel "A Comprehensive Compact Model for Multilevel Switching in TaOx-Based Memristive 1T-1R Cells" in IEEE Access, vol. 13, pp. 127280-127291, 2025, doi: 10.1109/ACCESS.2025.3590140

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Dr.-Ing. Stephan Menzel

Dr. Vikas Rana