Novel M-CNN design fostering gradual switching of InGaZnO(IGZO)-based memristive devices

Published: May 28, 2026

In this study, we developed a simulation framework linking measured I-V characteristics of gradual-switching IGZO-based memristive devices to M-CellNN operation and proposed a symmetrized cell design that compensates for device asymmetry and improves operational stability.

Journal: 2026 IEEE International Symposium on Circuits and Systems (ISCAS), May 24^th -27^th, 2026, Shanghai, China
Authors: P. Yuan, K. Schnieders, Y. Wang, V. Ntinas, M. E. Pereira, V. Rana, A. Ascoli, R. Tetzlaff, R. Dittmann, S. Menzel
DOI: 10.1109/ISCAS66217.2026.11562042
Funding; NEUROTEC (Grants No 16ME0398K and No 16ME0399),
NeuroSys (03ZU1106AB)
TRR 404 Active-3D (project number: 528378584) 
Mem2CNN (441957207)

Contact

Peijia Yuan

Doctoral researcher

• Peter Grünberg Institute (PGI)
• Electronic Materials (PGI-7)

Building 04.6 /
Room 43

+49 2461/61-6053

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Dr.-Ing. Stephan Menzel

Group Leader - Modeling and simulation of novel electronic devices

• Peter Grünberg Institute (PGI)
• Electronic Materials (PGI-7)

Building 04.6 /
Room R 51

+49 2461/61-5339

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Prof. Dr. Regina Dittmann

Director Electronic Materials (PGI-7)

• Peter Grünberg Institute (PGI)
• Electronic Materials (PGI-7)

Building 04.6 /
Room 49b

+49 2461/61-4760

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Dr. Vikas Rana

Group Leader

• Peter Grünberg Institute (PGI)
• Electronic Materials (PGI-7)

Building 04.6 /
Room R 22

+49 2461/61-6074

E-Mail