NEUROTEC II https://www.neurotec.org/de

NeuroSys II https://neurosys.info/

CRC/TRR 404 – Active 3D https://cfaed.tu-dresden.de/trr-home

DFG SPP 2262 “Memristive Devices Toward Smart Technical Systems” https://memristec.de/

Ferroelectric Hf_0.5Zr_0.5O2

We investigate ferroelectric thin films with respect to filamentary-type resistive and ferroelectric switching for future memory application.

Area-dependent type IGZO-based memristive devices

We fabricate area-dependent type IGZO-based memristive devices that can be switched under electrical bias or under light irradiation.

Finite-size phenomena in freestanding oxides (w/ AG Gunkel)

We synthezise atomically-defined, nanometer thick oxide membranes that can help to integrate atomically engineered oxides with silicon (or other) material templates.

Phase stability and ferroelectric properties of free-standing HZO membranes

This work develops and characterises free‐standing HZO membranes for advanced ferroelectric applications, addressing the limitations of conventional polycrystalline films by employing epitaxial heterostructures.

Memristive Time-difference Encoders (MemTDE)

We fabricate, characterize and optimize CMOS compatible volatile a-STO-based memristive devices for event-based sensing applications.

Thermal management in memristive devices

We introduce new approaches to thermal management of filamentary memristive devices, aiming to enhance the device performance – faster switching speed and lower operating voltages. Moreover, we explore new ways to control heat dissipation in dense arrays for novel computing concepts and new device design rules.

Strange magnetism in strongly correlated oxide thin films

We fabricate high quality single crystal thin films of CaIrO₃ under epitaxial strain to investigate strange magnetism that has been predicted from theoretical calculations in Ir-based strongly correlated oxides.

Full wafer pulsed laser deposition for CMOS-BEOL

We use large-area PLD to intregrate complex-oxide-based thin films with silicon for area-scaling, memristive devices and neuromorphic computing.

• “Roadmap to neuromorphic computing with emerging technologies”, A.Mehonic, D. Ielmini, K. Roy, O. Mutlu, S. Kvatinksy, T. Serrano-Gotarredona, B. Linares-Barranco, S. Spiga, S. Savel’ev, A. G. Balanov, N. Chawla, G. Desoli, G. Malavena, C.M. Compagnoni, Z. Wang J.J. Yang, S.G. Sarwat, A. Sebastian, T. Mikolajick, S. Slesazeck, B. Noheda, B. Dieny, T.H.A. Hou, A. Varri, F. Brückerhoff-Plückelmann, W. Pernice, X. Zhang, S. Pazos, M. Lanza, S. Wiefels, R. Dittmann, W.H. Ng, M. Buckwell, H.RJ Cox, D.J. Mannion, A.J. Kenyon, Y. Lu, Y. Yang, D. Querlioz, L. Hutin, E. Vianello, S.S. Chowdhury, P. Mannocci, Y. Cai, Z. Sun, G. Pedretti, J.P. Strachan, D. Strukov, M. Le Gallo, S. Ambrogio, I. Valov, R. Waser, APL Mater. 12, 10 (2024) https://doi.org/10.1063/5.0179424

• „Resolving the relaxation of volatile valence change memory“, J. Hellwig, C. Funck, S. Siegel, A. Sarantopoulos, D. Spithouris, S. Menzel, R. Dittmann, Adv. Elect. Mater. 2400062 (2024) https://doi.org/10.1002/aelm.202400062

• “Eightwise Switching Mechanism in Memristive SrTiO₃ Devices and Its Implications on the Device Performance”, A. Sarantopoulos, R. Waser, and R. Dittmann,, Phys. Status Solidi A, 2300483 (2023); https://doi.org/10.1002/pssa.202300483

• “Engineering the kinetics of redox-based memristive devices for neuromorphic computing”, R. Dittmann, A.Sarantopoulos, C. Bengel, A. Gutsche, F. Cüppers, S. Hoffmann-Eifert and S. Menzel, 2023 International Electron Devices Meeting (IEDM), San Francisco, CA, USA (2023), pp. 1-4, 10.1109/IEDM45741.2023.10413803

• “2022 roadmap on neuromorphic computing and engineering”, D. V. Christensen, R. Dittmann, B. Linares-Barranco, A. Sebastian, M. Le Gallo, A. Redaelli, S. Slesazeck, T. Mikolajick, S. Spiga, S. Menzel, I. Valov, G. Milano, C. Ricciardi, S.-J. Liang, F. Miao, M. Lanza, T. J. Quill, S. T. Keene, Alberto Salleo17, J. Grollier, D. Markovic, A. Mizrahi, P. Yao, J. Joshua Yang, G. Indiveri, J. P Strachan, S. Datta, E. Vianello, A. Valentian, J. Feldmann, X. Li, W. HP Pernice, H. Bhaskaran, S. Furber, E. Neftci, F. Scherr, W. Maass, S. Ramaswamy, J. Tapson, P. Panda, Y. Kim, G. Tanaka, S. Thorpe, C. Bartolozzi, T. A Cleland, C. Posch, S.-C.Liu, G. Panuccio, M. Mahmud, A. N. Mazumder, M. Hosseini, T. Mohsenin, E. Donati, S. Tolu, R. Galeazzi, M. E. Christensen, S. Holm, D. Ielmini and Nini Pryds, Neuromorph. Comput. Eng. 2 022501 (2022), https://doi.org/10.1088/2634-4386/ac4a83

• Nanoionic memristive phenomena in metal oxides: the valence change mechanism, Regina Dittmann, Stephan Menzel, Rainer Waser, Advances in Physics Volume 70 (2), 2021, https://doi.org/10.1080/00018732.2022.2084006

• “Anomalous Resistance Hysteresis in Oxide ReRAM: Oxygen Evolution and Reincorporation Revealed by in situ TEM”, D. Cooper, C. Baeumer, N. Bernier, A. Marchewka, C. La Torre, R. E. Dunin-Borkowski, S. Menzel, R. Waser and R. Dittmann, Adv. Mater., 1700212 (2017) https://doi.org/10.1002/adma.201700212

• “Quantifying redox-induced Schottky barrier variations in memristive devices via in operando spectromicroscopy with graphene electrodes”, C. Baeumer, C. Schmitz, A. Marchewka, D. N. Mueller, R. Valenta, J. Hackl, N. Raab, S. P. Rogers, M. I. Khan, S. Nemsak1, M. Shim, S. Menzel, C. M. Schneider, R. Waser and R. Dittmann, Nat. Commun. 7, 12398 (2016) https://doi.org/10.1038/ncomms12398

• „Spectromicroscopic insights for rational design of redox-based memristive devices”, C. Baeumer, C. Schmitz, A. H. H. Ramadan, H. Du, K. Skaja, V. Feyer, Ph. Müller, B. Arndt, C.-L. Jia, J. Mayer, R. A. De Souza, C. M. Schneider, R. Waser, and R.Dittmann, Nature Communications, 6, 8610 (2015), http://doi.org/10.1038/ncomms9610

• „Redox-based resistive switching memories-nanoionic mechanisms, prospects, and challenges“, R. Waser, R. Dittmann, G. Staikov, K. Szot, Advanced Materials 21, 1-32 (2009) https://doi.org/10.1002/adma.200900375