Electrical characterization and reliability of memristive devices
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The research group is centered around the electrical characterization and reliability of memristive devices, reaching from Redox-based resistive switches (ReRAM) to phase change memory (PCM) and from single cells (1R), via 1-transistor-1-resistor (1T1R) structures to arrays and circuits. A general focus lies on the automation of measurement schemes to generate significant statistics. This allows for understanding the intrinsic variability of resistive switching devices and is crucial to identify rare failure mechanisms. Further, we develop variability aware algorithms to program memristive devices and aim for emulating neuromorphic functionalities using external DAC and ADC before they are integrated on chip.
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Last Modified: 21.03.2025