Electrical characterization and reliability of memristive devices

About

The research group is centered around the electrical characterization and reliability of memristive devices, reaching from Redox-based resistive switches (ReRAM) to phase change memory (PCM) and from single cells (1R), via 1-transistor-1-resistor (1T1R) structures to arrays and circuits. A general focus lies on the automation of measurement schemes to generate significant statistics. This allows for understanding the intrinsic variability of resistive switching devices and is crucial to identify rare failure mechanisms. Further, we develop variability aware algorithms to program memristive devices and aim for emulating neuromorphic functionalities using external DAC and ADC before they are integrated on chip.

Research Topics

  • Ultra-Fast Characterization of Memristive Devices
  • Reliability and Variability
  • Automated Characterization
  • Array Characterization and operations

    • Contact

    Dr. Stefan Wiefels

    PGI-7

    Building 04.6 / Room 21a

    +49 2461/61-5881

    E-Mail

    Last Modified: 12.11.2025
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