An Energy Efficient Memory Cell for Quantum and Neuromorphic Computing at Low Temperatures
Cryogenic computing—including quantum, von Neumann, and neuromorphic architectures—demands low-power operation and high memory density. We present a Cryogenic Capacitorless Random Access Memory (C²RAM) cell based on advanced FDSOI technology, offering enhanced storage density through its scalability and multistate capability. Our results demonstrate that C²RAM exhibits ultra-long retention times and holds promise as an artificial synapse. These characteristics position C²RAM as a strong non-volatile memory candidate for both quantum and neuromorphic computing at cryogenic temperatures.
Yi Han, Jingxuan Sun, Benjamin Richstein, Andreas Grenmyr, Jin Hee Bae, Frederic Allibert, Ionut Radu, Detlev Grützmacher, Joachim Knoch, Qing-Tai Zhao* https://doi.org/10.1021/acs.nanolett.4c05855
ACS Nano Letters. Published on April 13., 2025
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