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Equipment List

An up-to-date equipment list and data such as location and tool owners is available within the PPMS Booking Tool

Process

Tool

Decription

Electron-Beam Lithography

Vistec EBPG 5000+100keV, up to 150 mm, res. > 15 nm, overlay 0.5 nm +/- 2.5 nm
Raith EBPG 5200100keV, up to 200 mm, res. > 10 nm, overlay 0.5 nm +/- 2.5 nm

Aligner Lithography

Süss MJB4 ("MA5")front side alignment, MFS ≈ 1 micron, overlay < 0.5 micron, lamp: 350 W (Hg), max. sample size 100 mm
Süss MA8/BA8 ("MA4")front and back side alignment, MFS ≈ 0.3 micron, overlay 0.25 micron, lamp: 1 kW (Hg), max. sample size 200 mm
Süss MA6 ("MA3")front and back side alignment, MFS ≈ 0.3 micron, overlay ≈ 1 micron, lamp: 500 W (HgXe), max. sample size 150 mm
Süss MA4/6-BSA ("MA2")front and back side alignment, MFS ≈ 1 micron, overlay ≈ 1 micron, lamp: 350 W (Hg), max. sample size 100 mm
Süss MA6 ("MA1")front side alignment, MFS ≈ 1 micron, overlay ≈ 1 micron, lamp: 350 W (Hg), max. sample size 100 mm

Maskless Lithography

Heidelberg Instruments DWL 66+front and back side alignment, grayscale exposure mode, laser: 375 nm, MFS > 0.6 micron, overlay < 0.5 micron, max. sample size 200 mm
Heidelberg Instruments MLA 100front side alignment, laser: 365 nm, MFS ≈ 1 micron, overlay < 1 micron, max. sample size 150 mm
Heidelberg Instruments NanoFrazor Exploretip mode: [MFS > 15 nm, overlay 25 nm, gray scale possible]; laser mode: [MFS > 0.6 micron, overlay 100 nm]; max. sample size 200 mm, max. write field 60x60 micron2

3D Printer

Nanoscribe Photonic Professional GT2xy-res. > 0.5 micron, z-res. > 1 micron, max print volume 100 mm3, max. object height 8 mm

Nano-Imprint

Nanonex NX 2000MFS ≈ 30 nm, overlay (via Süss MA6) ≈ 1 micron, max. sample size 100 mm

Dry Etching

Oxford PLS 100 Cluster toolUp to 150 mm, load lock, only CMOS
Chamber 1: RIE,
Gas species: Ar, O2, SF6, CHF3, CF4
Chamber 2: ICP
Gas species: Ar, O2, HBr, Cl2
Oxford PLS 100 Cluster toolUp to 200 mm, load lock, only CMOS
Chamber 1: ICP, Gas species: Ar, O2, SF6, CHF3, CF4
Chamber 2: ICP, Gas species: Ar, O2, HBr, Cl2
Oxford PL 100 / ICP
Up to 150 mm, load-lock, Gas species: Ar, O2, CF4, Cl2, HBr,
Oxford PL 100 / ICP

Up to 150 mm, Load lock, only Si-based materials,

Gas species: Ar, O2, H2, SF6, CHF3, Cl2

Bosch and Cryo process for deep silicon etching …

Oxford PL 100 / ICPUp to 150 mm, load lock, Gas species: Ar, O2, CF4, Cl2, HBr
TePl Gigabatch 360Resist stripping, N2, O2, CF4, up to 150 mm

Deposition

Balzers PLS 500Up to 3 x 100 mm, load lock, Ar-cleaning in load lock, 6 crucibles, different metals
Balzer PLS 570Up to 5 x 150 mm, load lock, Ar - Cleaning, 6 crucibles, metals: Al, Au,Ti, Pt, Ag, Cr, for bio-inspired systems
Leybold Univex 400Up to 100 mm, Ar-Cleaning in load lock, 8 crucibles
Oerlikon EVO 2Up to 200 mm, CMOS only, DC/RF-Sputtering, three sources parallel, Al, Ti, TiN, Ta, Ni, TaN, insulators
Oxford PLS 100 PECVDup to 200 mm, load lock, SiO2, SiNx, LR- and RF-plasma nodes
Sentech PECVDUp to 200 mm, load lock, SiO2, SiNx, low temperature deposition (100oC < T > 350oC)
Aixtron Tricent Cluster CVDSiGe epitaxy for 300 mm
Aixtron Tricent Cluster CVDSiGeSn epitaxy for 300 mm
Aixtron Tricent Cluster ALDHigh-k, HfO2, Al2O3, HfyAl(1-y)Ox, for wafers 300 mm, 200 mm, 100 mm'; pieces 19,5 x 19,5 mm
Aixtron Tricent Cluster AVDMetal gate AVD, TiN, TaN, for wafers 300 mm, 200 mm, 100 mm'; pieces 19,5 x 19,5 mm
Oxford ALDTaOx, Al2O3, for Si with Au, up to 150 mm

Dicing

Disco DAD3350Si, glass, Al2O3, ceramics, up to 200 mm and thickness of 1.5 mm, no II/V-materials, 2" spindel
Dico
Süss ScriberUp to 100 mm, for GaAs

Wet Benches

Full wet bench line for Si processingWet benches for Preclean, Cleaning S1/S2, RCA, Resist coating (incl. HDMS), Development, Solvents, Lift off, wet etching, up to 200 mm
Full wet bench line for III/V processingWet benches for Preclean, Cleaning, Resist coating (incl. HDMS), Development, Solvents, Lift off, wet etching, up to 150 mm
Full wet bench line for Biohybrids and not semiconductor materialsWet benches for Preclean, Cleaning, Resist coating (incl. HDMS), Development, Solvents, Lift off, wet etching, up to 200 mm
Four Wet benches for Precleaning and Etching of "special materials"Two benches for cleaning and etching with acids and bases, two wet benches for handling solvents, up to 200 mm
Wet bench mask making chrom masksTwo wet benches for developing and etching chrom masks, up to 200 mm

Wafer Cleaner

SSEC wafer cleaner Si-Based 1 reactor up to 150 mm
Semitool wafer cleaner2 reactors for 200 mm and 2 reactors for 300 mm, CMOs only
Semisolar mask cleaner 5"for mask up to 5”

CPD critical point dryer

Tousimis 931 seriesup to 2,5"

Implanter

Axcelis OptimaUp to 300mm, 200ev-60Kev, B, BF2, P, As, Si, H, H2, only Si
Axelis 8250Up to 150 mm, 1 KeV- 250 KeV B, BF2, P, As, Si, H,
Eaton NV 3204Up to 100 mm, 20-200 KeV

Thermal processing

UniTemp RTP 150Rapid Thermal Processing for Si, SiGe,etc. Gas Species: N2, H2, O2, Ar, max 1000oC, up to 100 mm
UniTemp RTP 150Rapid Thermal Processing for III/V, Gas Species: N2, H2, O2, Ar, max 1000oC, up to 150 mm
Tempress horizontal furnaceWet and dry thermal oxidation of Si, up to 100 mm, 800 - 1100oC
Tempress horizontal furnaceWet and dry thermal oxidation of silicon and metals, up to 100 mm, 450 - 1100oC
Tempress horizontal furnaceDry thermal oxidation of Si, up to 100 mm, 800 - 1100oC
Mattson HeliosDual Chamber for 6” and 12” Si
Mattson ST 2000Rapid thermal Processing for Si, Gas species: N2O, O2, H2, Ar, N2, max 1050oC, for 150 mm Si
Centrotherm CLV, vertical furnaceup to 200 mm, Gas species: N2, N2O, H2, O2, DCE, max 1050oC
Centrotherm CLV, vertical furnaceup to 200 mm, Gas species: N2, H2, O2, DCE, max 1050oC

Analytic

FEI Magellan, scanning electron microscopeHigh resoluition SEM for electron energies below 5 KeV, Energy dispersive X-rax analasis
FEI Helios FIB + EBIDFocused Ion Beam, EBID for PT, Au, SiO2, Ir, Cryo stage for biological applications
Zeiss 1550 Scanning Electron MicroscopeGeneral purpose SEM, Gemini column, up to 30keV
Zeiss 1550 VP Scanning Electron MicroscopeGeneral purpose SEM, Gemini column, up to 30keV
ZEiss Sigma 300 with 4 Nano-ManipulatorsGeneral purpose SEM, Gemini column, up to 30keV
SenTech SE800 spectroscopic ellipsometerUp to 300 mm, mapping
Accurion nanofilm RSE, fast spectroscopic ellipsometerUp to 100 mm, mapping
Accurion nanofilm EP4, imaging ellipsometerUp to 100 mm, mapping
Bruker Dektak 150, Surface profiler2 nm vertical resolution
Bruker Dektak XT, mapping profiler2 nm vertical resolution
Bruker AFMup to 100 mm
RBS TandetronH+ up to 3,1 MeV, He++ up to 5,1 MeV
Leitz INM 100 Microscope optical microscope
Leitz INM 300 MicroscopeUV- optical microscope
Confovis Confocal Mikroscopewafer inspect


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