Your workbench for micro- and nanostructures

The Helmholtz Nano Facility (HNF) is a state-of-the art clean room facility with 1200 m2 clean room of classes ISO 1-3. The HNF operates based on DIN EN ISO 14644. The HNF is ISO 9001 certified.

The HNF is the supplier for micro- and nanostructures for all departments of the Forschungszentrum Jülich, its cooperation partners, as well as for external customers. This is done either as a user facility via training on the job or in service.

Director: Dr. J. Moers

Deputy Director: Dr. Th. Grap

Focal Point of Research

Messages and Brief-Infos

New LPCVD

HNF launches a new LPCVD tool for the support of Low Stress & Stoichiometric Nitride and as well TEOS Oxide. The tool is equipped with two stack of tubes, managing up to 35 x 4” wafers and is compatible for 6” and 8” wafers. Low stress nitride is performed at a high ratio of DCS to NH3 flow rates. The consequence of such silicon-enriched deposition is a very low tensile stress. The stress depends mainly on the gas mixing ratio and the process temperature. The processing pressure is typically a few Torr or lower. Applications: MEMS, diffusion barriers, passivation layers, oxidation masks, etch masks, ion implant masks, insulation, encapsulation, mechanical protection, gate dielectrics, optical waveguides, CMP and etch stop layers.

HNF installs new laser direct writer

HNF's equipment pool has been extended to include an MLA 150 (MLA: maskless aligner), from Heidelberg Instruments. In so-called maskless lithography, micrometer-sized structures are written onto a photoresist-coated substrate using a laser. The desired structures only have to be drawn on a PC first. The very short cycle time from design creation to the finished exposed substrate makes the system ideal for prototype development. The 375nm laser can resolve structures down to one micrometer and achieves a global alignment accuracy of less than 500 nm. The focus of the new system, however, is primarily on its very high writing speed. For example, a 100mm x 100mm area can be exposed in about 35 minutes and a full 4-inch wafer in under 25 minutes. In addition, the system has a "Filed-Alignemt Adon" which improves the alignment accuracy on partial areas of the sample to less than 250nm. Also installed is a so-called "High Aspect Ration Module" which can be optionally switched on. This improves the steepness of the resist edges for thick resists.

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