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Strain engineering of Ge(Sn) via strain-relaxed (Si)GeSn buffers

Similar to the use of strain relaxed SiGe buffers, partially relaxed (Si)GeSn buffers can be used for straining Ge or GeSn layers grown on top. The very broad range in Si and Sn compositions allows tuning of the buffers lattice constant over a large range, as exemplified in Fig. 1 a), making biaxial tensile strained Ge up to 1.4 % available (cf. Fig. 1 b)).

Figure 1. (a): Lattice constants of partially relaxed GeSn alloys and theoretically induced strain in Ge grown on top. (b): RSM of a strained Ge (sGe) layer grown on top of a partially relaxed GeSn layer (both from [3]).Figure 1. (a): Lattice constants of partially relaxed GeSn alloys and theoretically induced strain in Ge grown on top. (b): RSM of a strained Ge (sGe) layer grown on top of a partially relaxed GeSn layer. Reproduced with permission from ECS Transactions, 64, 689-696 (2014). Copyright 2014, The Electrochemical Society [3].

With the same approach, utilizing strain relaxed (Si)GeSn buffers, also fully relaxed and tensile strained GeSn layers can be obtained, as shown in Fig. 2.

Figure 2.: Angular channeling scans allow precise determination of the strain state (from [2]).Figure 2. : Angular channeling scans allow precise determination of the strain state. Reproduced with permission from Appl. Phys. Lett. 103, 192110. Copyright 2013, AIP Publishing LLC [2].

[1] S. Wirths, A. T. Tiedemann, Z. Ikonic, P. Harrison, B. Holländer, T. Stoica, G. Mussler, M. Myronov, J. M. Hartmann, D. Grützmacher, D. Buca, and S. Mantl,
Appl. Phys. Lett., vol. 102, no. 19, p. 192103, 2013.
Band engineering and growth of tensile strained Ge/(Si)GeSn heterostructures for tunnel field effect transistors

[2] S. Wirths, Z. Ikonic, A. T. Tiedemann, B. Holländer, T. Stoica, G. Mussler, U. Breuer, J. M. Hartmann, A. Benedetti, S. Chiussi, D. Grützmacher, S. Mantl, and D. Buca,
Appl. Phys. Lett., vol. 103, no. 19, p. 192110, 2013.
Tensely strained GeSn alloys as optical gain media

[3] S. Wirths, Z. Ikonic, N. von den Driesch, G. Mussler, U. Breuer, A.T. Tiedemann, P. Bernardy, B. Holländer, T. Stoica, J.M. Hartmann, D. Grützmacher, S. Mantl and D. Buca,
ECS Transactions, vol. 64, no.6, pp. 689-696, 2014.
Growth Studies Of Doped SiGeSn/Strained Ge(Sn) Heterostructures


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