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2012

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Laser synthesis of germanium tin alloys on virtual germanium
Applied physics letters 100, 104101 () [10.1063/1.3692175] Allianz-OA  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Anisotropy of strain relaxation in (100) and (110) Si/SiGe heterostructures
Journal of applied physics 111, 014904 () [10.1063/1.3672447] Allianz-OA  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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LaLuO3 higher-k dielectric integration in SOI MOSFETs with a gate-first process
Solid state electronics 71, 19 - 24 () [10.1016/j.sse.2011.10.014] BibTeX | EndNote: XML, Text | RIS

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p-Type Ion Implantation in Tensile Si/Compressive Si0.5Ge0.5/Tensile Strained Si Heterostructures
Journal of the Electrochemical Society 159, H44 - H51 () [10.1149/2.060201jes] BibTeX | EndNote: XML, Text | RIS

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Hole Mobilities of Si/Si0.5Ge0.5 Quantum-Well Transistor on SOI and Strained SOI
IEEE electron device letters 33, 758 - 760 () [10.1109/LED.2012.2190035] BibTeX | EndNote: XML, Text | RIS

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Hole Transport in Strained Si0.5Ge0.5 QW-MOSFETs with <110> and <100> Channel Orientations
IEEE electron device letters 33, 1105 - 1107 () [10.1109/LED.2012.2199958] BibTeX | EndNote: XML, Text | RIS

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Tunneling field-effect transistor with a strained Si channel and a Si0.5Ge0.5 source
Solid state electronics 74, 97-101 () [10.1016/j.sse.2012.04.018] BibTeX | EndNote: XML, Text | RIS

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Impact of strain and Ge concentration on the performance pf planar SiGe band-to-band-tunneling transistors
Solid state electronics 71, 42 - 47 () [10.1016/j.sse.2011.10.018] BibTeX | EndNote: XML, Text | RIS

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Electrical characterization of O-gated uniaxial tensile strained Si nanowire-array metal-oxide-semiconductor field effect transistors with <100> and <110> channel orientations
Thin solid films 520, 3332 - 3336 () [10.1016/j.tsf.2011.08.034] BibTeX | EndNote: XML, Text | RIS

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Strained Nanoscaled Devices
ECS transactions 50(9), 717-736 () [10.1149/05009.0727ecst] BibTeX | EndNote: XML, Text | RIS

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Unipolar behavior of asymmetrically doped strained Si 0.5Ge 0.5 tunneling field-effect transistors
Applied physics letters 101(12), 123501 () [10.1063/1.4751356] Allianz-OA  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Silicon germanium tin alloys formed by pulsed laser induced epitaxy
Applied physics letters 100(20), 204102 - () [10.1063/1.4714768] Allianz-OA  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS


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